DE10032955A1 - Arrangement for generation of low temperature plasma at atmospheric pressure, has electrode system or parts of it provided with electrical networks for matching impedance to output data of high frequency generators - Google Patents

Abstract

An arrangement for the generation of a low temperature plasma at atmospheric pressure consists of two electrode systems between which a high frequency voltage is applied and which have spacings between 10 and 1000 microns filled with the plasma-generating gas. The electrode system altogether or parts of it is/are provided with electrical networks (18) for the matching of the impedance of the electrode system and the plasma generated with it to the output data of high frequency generators (14). The electrode system consists of a strip-like electrode pair (15) arranged in parallel which is connected to the high frequency. The electrode system also consists of several strip-like electrode pairs to which the high frequency is connected directly by parallel wiring.

Description

field of use

The invention relates to an arrangement for generating a low-temperature plasma by means of a high-frequency gas discharge according to the preamble of the claims and is especially in plasma-supported thin-film processes and in surface modification decoration of materials usable.

State of the art

Already in the 1930s, alongside the already known corona and barrier outlet the possibility of generating a glow discharge at comparatively high Gas pressures between 10 and 1000 mbar described. It is shown (A. v Engel, M. Steenbeck, "Electrical gas discharges", Vol. I and II, Springer Verlag Berlin, 1932 and 1936, and by Engel, A .; Seeliger, R .; Steenbeck, M .; Journal of Physics (1933) vol. 85 144-160,) that a glow discharge with direct current is ignited even at atmospheric pressure can be detected if the distance between the electrodes of the known similarity relationship p. d = const. is sufficient (p - gas pressure, d - electrode spacing). It is shown that at Electrode spacings of a few tenths of a millimeter on comparatively small areas A low-temperature plasma with typical fuel chips of a few square millimeters 300-600 V can be ignited. Considerable attention is paid to the ex extremely high heat load on the electrodes, which is why with atmospheric air only electrode areas of a few square millimeters are examined.

In addition to these atmospheric DC plasmas, there were already at the beginning of the 20th century some activities for the generation of high-frequency plasmas with comparatively high Tensions. High frequency spark discharges in atmospheric air have occurred before The triumphal advance of the electron tubes from around 1920 to stimulate the resonant circuits of radio transmitters used (extinguishing spark transmitter).

Above all with the emergence of semiconductor microelectronics and the resultant A need for thin-film processes creates an extraordinarily broad field of applications Applications of low-temperature plasmas in the fine and high vacuum range. Plasmaver drive based on the mature investigated low-temperature plasma such as plasma CVD, plasma etching or plasma polymerization are achieved as thin film technologies in Vacuum systems an extraordinary scientific and industrial maturity.

With the end of the 20th century emerged from the semiconductor microelectronics as well also from the penetration of these plasma thin-film technologies into new markets such as Medical technology, photovoltaics, microsystem technology or new materials  the demand for cheaper and more productive processes. At provide atmospheric pressure plasma processes if they are based on the physical and be made usable for technical use.

Against this background, older work on corona and barrier discharges reexamined and more atmospheric towards this newly set goal Adapted plasma technology. Works like (K. Pochner, S. Beil, H. Horn, M. Blömer, Surf. Coatings Technology 97 (1997) 372-377, barrier discharge) or (R. Thyen, A. Weber, C.-P. Klages, surf. Coatings Technology, 97 (1997) 426-434, corona discharge) Possibilities of using these processes in thin film technology at atmosphere rend jerk.

The electri necessary to generate an atmospheric low-temperature plasma The field strength of more than 1 kV / mm can also be caused by inductively coupled plasmas be introduced. Options for this are e.g. B. in (Paul, K.C., Hatazawa, S., Taka hashi, M., Thin Solid Films, Vol. 345, (1999) 134).

The problem of the power load on the electrodes, especially with atmospheric DC Plasmas can also be countered by fluidic means (jet plasmas). E.g. in (Babayan, S.E., Jong, J, Y, Tu, V.J., Plasma Sources, Science and Technology (1998), vol. 7, 286) or (Jeong, J.Y., Babayan, S.E., Tu, VJ, Plasma Source, Science and Technology (1998) Vol. 7, 282,) atmospheric jet plasmas are described which, in addition to the Er Generation with DC can also be operated with high frequency or microwave generators can. For the jet plasmas is a relatively small diameter of 1-10 mm characterizing why Bewe Arrangements for the jet or multiple jet arrangements are examined.

In chemical mass spectroscopic analysis, mass spectrometers require one Ion generating source, which can be based on a plasma principle. Particularly high Detection sensitivities can be achieved if the ion source is at atmospheric chemical pressure is operated. For this purpose, typically very small (small diameters ner 10-20 mm) HF plasmas (Blades, M.W., Spectrochimica Acta, Part B, (1994), vol. 49B, 47) or ICP plasmas (Girshick, S.L., Yu. W. Plasma Chemistry and Plasma Proces sing (1990), vol. 10, 515) or (Ishigaki, T .; Xiabao Fan; Sakuta, T .; Banjo, T .; Shibuya, Y .; Appl. Phys. Letters (1997), vol. 71, 3787) is used.

A generally different claim with the background of large-scale use arises on the other hand, the patent application (K.H. Gericke, H. Schmidt-Böcking, German Patent, DE 196 05 226 A1, (1996)) again based on the comparatively old p. d = constant Ska law of atmospheric DC plasmas in p. d-scaled electrode arrays that  with the now available microsystem technology can be produced cheaply and over a large area. Wed. Crostructed electrodes for plasma generation are used e.g. B. also in (Stark, R. H .; Schoenhach, K. H .; in International Conference on Plasma Science (Cat.No .: 98CH36221) New York, NY, USA, IEEE, 1998, 241).

Similar arrangements of electrodes are described in the patents of J.R. Roth (Roth, J.R .; US Patent US 5669583 (1997)) for the technical arrangement of the electrode systems and in (Roth, J. R .; Patent WO 9638311 (1997)) and (Laroussi, M .; Liu, C .; Roth, J .; Spence P. D .; Tsai, P .; Wadsworth, L. C .; Roth, J. R .; Tsai, P. P .; Patent WO 9428568) for use these electrode systems are primarily used for surface modification of polymers beat. These (p.d) -scaled comb structures of electrode systems are included DC voltages or with high frequency already in American usage designated frequencies operated from 0.1 to 30 kHz.

With the possibilities shown in this way comb-like nested and again (p.d) - The breakthrough in industrial application was achieved with scaled electrode structures however cannot be achieved because of the heat inflow onto the the low temperature plasma generating electrodes in atmospheric pressure plasmas is not mastered. The one High frequency (1-100 MHz) was used on (p.d) scaled electrode structures not yet examined.

Disadvantages of the prior art

A state-of-the-art plasma system is characterized in that in a vacuum chamber at a gas pressure between 0.01 and 10 mbar Applying direct, low frequency, or high frequency voltages to electrodes is produced. The vacuum chamber must be constructed so that it can withstand the forces of endures atmospheric pressure. This leads to larger industrial Plasma systems account for a significant portion of the total equipment cost There is no vacuum system (more than 50% of the total costs possible).

While plasma systems for processing small series are still traditionally used to be working objects are loaded with ventilation and then at times between 0.5 and 60 min the required process vacuum by pumping down the vacuum chamber is generated, is used in larger industrial plasma systems with vacuum locks worked for the introduction and removal of the objects to be processed. These locks are expensive and complex because the mechanical handling technology contained therein is special must be adapted to the vacuum requirements.  

The entire technology range for manufacturing a product with a high thin film technology share, such as B. microsystem components, solar cells or sensors consists of a large proportion of atmospheric processing stations to which the in Vacuum plasma technology then takes place using transition elements (such as Locks) must be adjusted.

It follows from all these considerations that Atmo spherical pressure plasma systems bring considerable advantages. Research on Corona Discharges or barrier discharges are the farthest so far in this regard thriving forms of discharge. These discharges are usually on smaller areas Chen to atmospheric air directly generated and reach z. B. with arrangements where the relatively small plasma is mechanically moved over larger areas correct productivity for z. B. industrial polymer surface modification. The The disadvantage of these plasmas is that a large number of comparative in these plasmas wise high-energy plasma processes take place (e.g. partial corona discharges, sparks, Streamer), with the associated high and very inhomogeneously distributed charge carrier energies have a negative influence on thin-film systems that extends to destruction have steme. For thin-film processes such as plasma etching or plasma coating, which as essential process parameters a defined ion energy (set by the self- Bias voltage of the generated RF plasma), these are atmospheric plasmas therefore not applicable.

Productive industrial plasma systems are said to have removal or coating rates in the area of a few µm / min (high-rate processes). To achieve this is with plasmas in the mbar range an optimization of plasma physical that goes to the limits and plasma chemical parameters necessary, possibly with compromises with regard to further plasma and process parameters must be purchased.

(p.d) -scaled electrode systems, operated at high or atmospheric pressure possible high promises for industrial scales after the first attempts wear and coating rates. Are they with DC or low frequency voltages (< 100 kHz), the high thermal load leads to the generated high-power plasma ma too difficult to control service life problems on the electrode structures. Become these electrode systems operated with high frequency voltages is the thermal output load less but only plasma areas of a few square centimeters can be used Electrode area generated due to the high load capacity of the arrangement when conventional high frequency generators and matching networks are used.

Object of the invention

The object of the invention is therefore to provide an arrangement which enables a high frequency discharge for use in plasma systems at atmospheric pressure and which can be used for a long time to form a plasma both from noble gases and from molecular gases. In particular, charge carrier and radical densities in the range from 10 ¹¹ to 10 ¹⁴ cm ^-3 are to be generated in the plasma, which enable high plasma or particle flows to be processed on a substrate. The charge carriers that hit the substrates, especially the ions, should have a particle energy (less than 1 keV) that can be influenced by means of high-frequency discharge plasma parameters (self-bias voltage). Your distribution in the gas and on the substrate to be processed should be homogeneous on a microscopic scale and not plasma instabilities such. B. have streamers. Due to the particle densities that are up to three orders of magnitude higher than plasmas in the mbar range, coating and removal rates in the range of 1-10 µm / min and more than typical average non-optimized values are achieved.

If high-frequency plasmas are generated at atmospheric pressure using electrode systems, the electrodes have small distances, which are approximately in the range of 0.1 mm. Thereby are load capacities, especially if the electrode arrangements are to be large this arrangement conditioned the customization options of conventional high frequency networks based on a Pi filter can far exceed. In addition to the Solution of the tasks described above by applying Hochfre quenzplasmas the task for the solution according to the invention is that Electrode arrangements and radio frequency network connected therein or thereon Components are constructed so that large-area high-frequency plasmas in electronics The arrangements can be generated using conventional Pi filter arrangements Adaptation network would no longer be operable.

Solution of the task

According to the invention, this object is achieved by the characterizing features of the most patent claim solved. Due to the arrangement and electrical loading circuit is achieved that plasma sources can be built up, if preserved important advantages of high-frequency discharges such as controllable ion energy, atmospheric pressure plasmas with industrially usable downtimes can.

In the solution according to the invention, a low-temperature plasma at atmospheres pressure generated between electrodes. The following applies to the dimensioning of the electrodes  the law of similarity p.d = known from plasma technology in the mbar pressure range const, where p is the gas pressure in the plasma and d is the distance between the electrodes. On Applying atmospheric pressure results in electrode spacings depending on the gas type between 0.05 and about 1 mm.

A high-frequency voltage with an amplitude of 100-500 V _{s is} applied to the electrodes, so that the plasma ignites in the electrode gap and, depending on the type of gas and the resulting plasma parameters, continues to spread from the surrounding electrodes.

In the atmospheric plasma generated in this way, the particle densities of the neutral gases are radi cal and charge carriers by several orders of magnitude compared to known mbar Plasmas increased. This has the consequence that the current density of the charge carriers on the Electrodes is also increased by several orders of magnitude, which is one to the thermal load limit of the electrodes resulting heat load. Becomes generated a DC plasma between the electrodes, the ion energy is on the cathode 100-500 eV, which is connected with the high ion current density to one the electrode destructive performance input. With high-frequency plasmas, the energy is ions impinging on the electrodes due to the build-up bias voltage true and compared to DC plasmas one to two orders of magnitude smaller. of High-frequency voltages with frequencies between 1-300 MHz are advantageous applied to the electrodes to generate atmospheric plasmas when the electrodes should represent larger areas with long plasma operating times for industrial use. In order to generate larger plasma areas, groups are separated from each other instead of two electrodes pairs of electrodes facing each other with the required distance as an electrode system systems, to which the high-frequency voltage is applied. The edge of the Electrode systems at the plasma gap can be straight or even with a pe periodically repeating patterns. The distance between the electrodes can be trode system be different or advantageously the same.

The electrode systems can consist of individual mechanically produced electrodes and insulators in between can be assembled or as structured Layer system can be applied to an insulating support. The one from an electrically good Electrodes made of conductive material can be coated with an insulating layer up to about 10 microns thick to be provided when using reactive gases against plasma chemical Ab inert inert electrode systems.

In order to connect the output of a high-frequency generator to the operating frequency and match the operating frequency to the impedance of the electrode arrangement with the generated plasma, a high-frequency matching network is connected between the generator and the electrode system. If larger, industrially usable electrode systems are to be operated in this way, the impedance of the electrode system can lie outside the adaptation range of a high-frequency network. There are several ways to solve this problem according to the invention:

• 1. Division of the entire plasma arrangement into groups, each with a sepa High frequency network and generator are provided, dimensioned so that each Group is radio frequency customizable.
• 2. Subdivision of the entire plasma arrangement into groups, which advantageously with or intermediate networks integrated on the electrode arrangement, the partial vaccine to be brought together on a main adaptation network dances change so that the total impedance of the arrangement at the main match network is in the adjustment area.

The supply of the high frequency voltage over these networks can be asymmetrical or symmetrical with respect to mass (asymmetrical or symmetrical networks).

Advantages of the invention

The arrangement according to the invention creates large-area plasma sources, that while preserving the benefits of conventional high frequency gas discharges for the Thin-film technology, plasma sources operating in the atmospheric pressure range result. The inventive arrangement of the electrode systems for plasma generation and the operation of the plasma with high frequency does not lead to DC voltage induced instabilities in the plasma (transition from arc discharge). The thermal load the electrode systems can, in contrast to atmospheric pressure direct voltage discharge conditions are kept at values which are also from the elec electrode system can be dissipated as heat. By using a module con zepts (subdivision of the total plasma into individual, high-frequency switchable In principle, modules of any size can be put together.

part B example Description

The invention is illustrated below with reference to ten in the schematic drawings illustrated embodiments explained in more detail. Show it:

Fig. 1: an electrode system consisting of:
a) a pair of strip-shaped electrodes connected to an HF generator (to order ( 11 )),
b) two comb-shaped nested electrode groups connected to an HF generator (arrangement ( 12 )),
c) two comb-shaped nested electrode groups connected to an HF generator via an adaptation network (arrangement ( 13 )),

Fig. 2: the design of the edge of the electrodes on the plasma generating gap as a smooth edge parallel or in the same direction or in opposite directions offset angular line,

Fig. 3 is a plan view and cross section of a plasma generating electrode system on built from:
a) individual parts, ie electrically conductive electrodes and insulating intermediate insulators (arrangement ( 31 )),
b) with thin-layer or thick-layer technology electrode system applied to a carrier (arrangement ( 32 )),

FIG. 4 shows the connection of a plurality of electrode systems via a matching network to an RF generator,

FIG. 5 shows the connection of several Elektrodensyteme via a respective matching network to a respective high-frequency generator,

. FIG. 6 shows the connection and generating a mass related symmetrical RF voltage to an electrode system

. FIG. 7 shows the connection and generating a mass related asymmetric RF voltage to an electrode system

FIG. 8 shows an additional integrated matching network directly on the electrode system for impedance transformation to terminal values of the main matching network,

Fig. 9 shows the representation of different variants of integrated matching networks of Fig. 8:
a) reduction of the capacitive load of a subgroup of the electrode system by means of a series inductance (arrangement ( 91 )),
b) reduction of the capacitive load of a subgroup of the electrode system by means of a series capacitance (arrangement ( 92 )),

Fig. 10: the representation of an integrated adaptation network according to Fig. 8 with integrated transformers whose primary sides are connected in series.

The specific functioning of the invention is explained with reference to FIG. 1. A high-frequency voltage is applied to two strip-shaped electrodes ( 15 ) with a typical width of 0.2-2 mm and a typical distance of 0.05-0.5 mm by means of a generator (arrangement ( 11 )). A gas at atmospheric pressure is preferably an inert gas such as helium between the electrodes. As soon as a sufficiently high electrical field strength is generated by the high-frequency voltage (typical values of 1000 V / mm), a plasma ignites between the electrodes.

The plasma dimensions to be achieved in this way can be up to a few hundred millimeters in one dimension (length of the electrodes), but the width of the plasma and therefore the plasma area available for processing purposes is determined by the small electrode spacing at atmospheric pressure. The arrangement ( 12 ) no longer has this disadvantage, in which an electrode system comprising alternately connected electrodes ( 16 and 17 ) of the same dimensions as in arrangement ( 11 ) is used. All gaps between the electrodes with dimensions of 0.05-0.5 mm generate a plasma which, depending on the width of the electrodes and the recombination behavior of the charge carriers in the ionized gas, results in a more or less homogeneous plasma area over the electrode system.

The electrode systems of the arrangements ( 11 ) and ( 12 ) are fed by a high-frequency generator ( 14 ). Generators with frequencies of 1-100 MHz can be used for this. The ISM frequencies 13.56 MHz or 27.12 MHz are advantageously used. Due to the described electrode arrangement, load capacities arise even with relatively small plasma areas, which require the interposition of a matching network as shown in arrangement ( 13 ). At the same time, the adaptation network serves to adapt the power between the generator ( 14 ) and the electrode arrangement.

The gaps between the electrodes described in Fig. 1 can e.g. B. Gaps between sheets arranged in parallel. However, they can also be formed by flat electrodes (e.g. layer structures on a carrier). For both of these variants there are different possibilities for shaping the line-shaped or sheet-like edge of the plasma-generating gap, as is shown schematically in FIG. 2.

Arrangement ( 21 ) shows a gap for generating the plasma ( 24 ) with a flat edge, the arrangements ( 22 ) and ( 23 ) show different shapes of the edge with a jagged pattern in the same direction (electrode ( 27 )) or in opposite directions Way (electrodes ( 26 )).

Fig. 3. shows two basic ways to build up the electrode systems. An arrangement ( 31 ) made up of individual electrode systems ( 16 and 17 ) with intermediate insulators ( 33 ) and an arrangement ( 32 ) with electrode systems ( 35 and 36 ) produced in layer technology on an insulating support ( 34 ) shown. The plasma ( 24 ) can form a surface over both arrangements. The thickness of the plasma over the generating electrode surface is usually small and is 0.1 to 2 mm. The high-frequency generator ( 14 ) with the feed lines ( 37 ) is connected to the electrode systems. An advantageous solution is obtained if the generator is connected via an adaptation network, as shown in FIG. 1. The electrodes ( 31 ) or, as shown in FIG. 2, the thin-film electrode system ( 32 ) can be constructed with an insulating protective layer. A plasma can nevertheless be generated as long as the capacitive resistance of the capacitor formed by the electrode layer at the given frequency f does not exceed a voltage drop of at most 10% of the operating voltage. This is fulfilled as long as the layer thickness of these layers d _{max is} less than:

Here mean:
ΔU - maximum tolerable voltage drop across the layer,
f - frequency,
ε ₀ , ε - absolute or relative dielectric constant,
j - current density.

With typical values of ΔU = 5 V, f = 50 MHz, ε = 3 and j = 50 mAcm ^-2 , there is a boundary layer thickness of approx. 20 µm. By choosing z. B. silicon dioxide or aluminum oxide as a protective layer, a considerable plasma chemical passivation of the electrode system against corrosive plasmas can be achieved.

With the arrangements shown in Fig. 1 to Fig. 3 can be built up to about 50 × 50 mm ² plasma area depending on the type of gas and design of the electrode systems. However, industrial plants require much larger plasma areas (e.g. 50 × 1000 mm ² ). Plasma surfaces of such dimensions are advantageously carried Anein other rows of modular electrode systems as in Fig. 1 - Fig. 3 is shown constructed. Each module requires high-frequency power in the range of 100 W. There are two circuit problems:

• a) A total of high-frequency power in the kW range is required, which by a or several generators are applied and distributed to the electrode systems have to,
• b) The total impedance of such an arrangement requires specially dimensioned Adaptation networks or exceeds the circuitry possibilities of such Networks.

Fig. 4 shows an arrangement ( 41 ) in which several plasma modules from electrode systems ( 42 ) by means of an adaptation network ( 43 ) via electrical connections ( 37 ) are summarized in order to be operated by a powerful generator ( 14 ). Fig. 5. shows an arrangement ( 51 ) in which the problems a) and b) are solved in that for each plasma-generating electrode system ( 52 ) a coordinated network ( 53 ) and a generator ( 14 ) belong. This advantageously results in an arrangement ( 51 ) in which the intensity of the plasma (for example for homogeneity control) can be set separately in the individual plasma generator modules ( 55 ).

In all previously shown plasma generators at atmospheric pressure, there is the problem that, on the one hand, a plasma is to be generated in atmospheric gas, on the other hand parasitic secondary discharges through insulators or through gas paths whose gas path must be large against the dimensions of the plasma-producing column must be avoided. It is advantageous here, the arrangement shown in Fig. 6 (65), a related. Mass (64) symmetrical Hochfre quenzspannung is generated in which in connected to the Ge erator (14) network (63). This means that only half the value of the high-frequency voltage, which is required to generate the plasma, is always present between the leads and the mass parts surrounding them. The full voltage value is only reached between the electrodes of the electrode system and the plasma is generated.

Fig. 7. shows an arrangement ( 71 ) in which the electrode system ( 62 ) is operated with an asymmetrical network ( 72 ). An electrode group is now connected to ground ( 64 ). Although this arrangement can have the parts described with reference to arrangement ( 61 ), it is advantageous if a simple and inexpensive construction of the high-frequency network ( 72 ) and the feed lines ( 65 ) is sought.

As already mentioned in the description of the arrangement ( 41 ) ( FIG. 4), the impedance of a larger, industrially usable electrode system can lie far outside the limit values which, for. B. can compensate and adapt an adaptation network based on a Pi filter. This case is shown with the arrangement ( 81 ) in FIG. 8. In order to transform the impedance of the plasma-generating electrode system ( 84 ) at the network connection terminals ( 83 ) to acceptable values, integrated intermediate networks ( 85 ) are arranged in the feed lines to each group of the electrode system. They serve the task of reducing the excessive load capacity of the electrode system.

Two arrangements of integrated intermediate networks are shown in FIG . In the case of electrode systems, the inductive or capacitive components contained therein can advantageously also be integrated in layered technology using layered technology with the support of the electrode system. For this purpose, the entire electrode system of the arrangements ( 91 ) or ( 92 ) is divided into groups ( 93 ) with more favorable impedance values, which are connected in series to the network feed line ( 96 ) via an inductance ( 95 ) or a capacitance ( 94 ), which runs to the terminal ( 83 ) of the main network. In addition to the simplest options for changing impedance through inductances or capacitors, the integrated intermediate networks ( 85 ) can also contain more complex circuits such as pi filters or the like.

A further possibility of designing the adaptation with only one intermediate network is shown in FIG. 10 with arrangement ( 101 ). The plasma-producing electrode systems ( 84 ) are each provided with a high-frequency transformer in the intermediate network, the secondary winding ( 102 ) of which is advantageously dimensioned such that it forms a coordinated resonant circuit together with the capacity of the electrode system. To adjust the power of the individual plasma loads to the main circuit with line ( 104 ), both the transmission ratio of the transformers to the primary coil ( 103 ) and the type of connection of the primary coils (in arrangement ( 101 ) advantageously in series) are used. Other types of interconnection of the primary coils, such as in parallel or in groups in series and / or in parallel, are possible.

All in the description, the following claims and in the drawings Darge Features can be fiction, both individually and in any combination be essential.  

LIST OF REFERENCE NUMBERS

11

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12

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13

.

21

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22

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23

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31

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32

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41

.

51

.

61

.

71

.

81

.

91

.

92

.

101

arrangements

14

High-frequency generator

15

electrode pair

16

.

17

electrode group

18

.

53

.

82

RF matching networks

24

plasma

25

Electrode with a straight edge

26

Electrodes with the same sawtooth edge

27

Electrode with a sawtooth edge in opposite directions

33

between insulator

34

Electrode structure carrier

35

.

36

Thin film or thick film electrode structure

37

High frequency leads

38

insulator layer

42

.

52

.

62

.

84

plasma generating electrode systems

43

Group matching network

55

Plasma Generator Module

63

High frequency matching network with symmetrical output

64

earth terminal

72

High frequency matching network with asymmetrical output

83

connection points

85

integrated adaptation network

93

Part electrode group

94

capacitor

95

inductance

96

management

102

Secondary coil transformer

103

Primary coil transformer

104

management

Claims (21)

1. Arrangement for generating a low-temperature plasma at atmospheric pressure consisting of two electrode systems, between which a high-frequency voltage is applied and the gas-filled gas-filled distances between 10 -1000 microns, characterized in that the electrode systems in whole or in part with electrical Networks for adapting the impedance of the electrode systems and the plasmas generated with them to the output data of high-frequency generators are provided. 2. Arrangement according to claim 1, characterized in that the electrode system a parallel arranged strip-like pair of electrodes that connects to the high frequency is connected. 3. Arrangement according to claim 1 and 2, characterized in that the electrode system stem consists of several pairs of electrodes, to which the high frequency through parallel circuit is connected directly. 4. Arrangement according to claim 1 and 2, characterized in that the electrode system systems consist of several pairs of electrodes to which the high frequency is added network components is connected. 5. Arrangement according to claim 1 and one of claims 2, 3 or 4, characterized ge indicates that the electrode system consists of individual parts, i.e. H. made of electrically conductive Electrodes and supply lines and constructed from non-conductive intermediate insulators is. 6. Arrangement according to claim 1 and one of claims 2, 3 or 4, characterized ge indicates that the electrode system using thin film or thick film technology is applied to a flat carrier. 7. Arrangement according to claim 1 and 6, characterized in that the electrode system stem using thin film or thick film technology on a molded or flexible carrier is applied. 8. Arrangement according to claim 1, characterized in that the discharge column Electrode systems have the same distance. 9. Arrangement according to claim 1, characterized in that the discharge column Electrode systems have different distances. 10. The arrangement according to claim 1, characterized in that the edges of the discharge gaps of the electrode systems are straight and parallel to each other. 11. The arrangement according to claim 1, characterized in that the edges of the discharge Formation column of the electrode systems are shaped in certain periodic shapes.   12. The arrangement according to claim 1, characterized in that between the electrically conductive electrode systems and the plasma applied an insulating layer which has a high plasma chemical and plasma physical stability Plasmas with reactive gases guaranteed. 13. Arrangement according to claim 1, and one of claims 5, 6 or 7, characterized ge indicates that several electrode systems arranged on a carrier for generating larger plasma areas via networks to a high-frequency gene rator can be connected. 14. Arrangement according to claim 1 and one of claims 5, 6 or 7, characterized ge indicates that several electrode systems arranged on a carrier to generate larger plasma areas via a separate power-controlled one High frequency generator can be operated with a matching network. 15. The arrangement according to claim 1 and one of claims 2, 3 or 4, characterized ge indicates that the high-frequency voltage from the generator over one or more Other networks are transformed symmetrically and symmetrically to the two plasma generating electrode systems insulated from ground. 16. The arrangement according to claim 1 and one of claims 2, 3 or 4, characterized ge indicates that the high-frequency voltage from the generator over one or more other networks is transformed asymmetrically and asymmetrically to the two plas Electrode systems producing ma is created, one of which is connected to ground that can be. 17. The arrangement according to claim 1 and one of claims 5, 6 or 7, characterized records that the impedance of the plasma generating electrode system during operation with and without plasma from an external one connected via two supply lines High frequency network can be supplied. 18. Arrangement according to claim 1 and one of claims 5, 6 or 7, characterized records that the impedance of the plasma generating electrode system during operation with and without plasma the impedance limit values of an external via two supply lines connected network and thus the high-frequency adjustment too additionally via high-frequency networks or parts integrated in the electrode system from and about their circuitry summary. 19. The arrangement according to claim 1 and 18, characterized in that in the electrodes system-integrated network components are inductors, which are the capacitive load fully or partially compensate for the associated electrode system.   20. The arrangement according to claim 1 and 18, characterized in that in the electrodes system-integrated network components are capacities that support the capacitive load reduce the associated electrode system by connecting capacitors in series countries. 21. The arrangement according to claim 1 and 18, characterized in that the electrodes system-integrated network components are transformers whose secondary side is too coordinated with the capacities of the associated electrode systems Form resonant circuits and their transmission ratio to the primary side to the power adaptation is used with the primary sides parallel or in series or in be agreed groups are connected in parallel and in series.