DE10031524A1 - Method for separating semiconductor chips from wafer, involves initially scribing separation lines on wafer by laser beam - Google Patents

Method for separating semiconductor chips from wafer, involves initially scribing separation lines on wafer by laser beam

Info

Publication number
DE10031524A1
DE10031524A1 DE2000131524 DE10031524A DE10031524A1 DE 10031524 A1 DE10031524 A1 DE 10031524A1 DE 2000131524 DE2000131524 DE 2000131524 DE 10031524 A DE10031524 A DE 10031524A DE 10031524 A1 DE10031524 A1 DE 10031524A1
Authority
DE
Germany
Prior art keywords
wafer
semiconductor chips
laser beam
separation lines
separating semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2000131524
Other languages
German (de)
Inventor
Mathias Brandstaetter
Hannes Mio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE2000131524 priority Critical patent/DE10031524A1/en
Publication of DE10031524A1 publication Critical patent/DE10031524A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

A method for separating semiconductor chips from a wafer, involves scribing in a first step along given separation lines on the wafer by laser beam, and in a second step the wafer is divided into semiconductor chips in an ultra-sound bath.

Description

Die vorliegende Erfindung betrifft ein Verfahren zum Verein­ zeln von Halbleiterchips aus einem WaferThe present invention relates to a method for association of semiconductor chips from a wafer

Halbleiterbauelemente werden in großer Stückzahl auf einem großflächigen Substrat aus Halbleitermaterial, einem so ge­ nannten Wafer, hergestellt. Anschließend wird der Wafer in einzelne Halbleiterchips mit je einem oder wenigen Bauelemen­ ten zerlegt. Für dieses Vereinzeln der Chips ist bereits eine Vielzahl dafür geeigneter Verfahren entwickelt worden. Ein vollständiges Durchtrennen des Materials des Wafers erfolgt bei Verwendung von Diamantsägeblatt, Laserstrahl, Ultra­ schall-Schneidewerkzeug, Wasserstrahl oder Ätzlösung. Wird der Wafer mit einem Sägeblatt oder mit einem Laserstrahl nur teilweise durchtrennt (Erzeugen einer Kerbe oder Ritze), kann er anschließend mittels einer Walze in die Chips zerbrochen werden. Es können statt dessen mit einer Ätzlösung Gräben längs der Trennlinien geätzt werden, an denen der Wafer dann unter Einsatz von Ultraschall zerteilt wird. Beim Vereinzeln der Chips wird durch die benötigten Sägestraßen Fläche des Wafers verbraucht, die nicht für Bauelemente genutzt werden kann; außerdem ist die Ausschussquote zu hoch.Semiconductor components are manufactured in large numbers on one large-area substrate made of semiconductor material, a so-called called wafers. Then the wafer is in individual semiconductor chips with one or a few components each disassembled. There is already one for this separation of the chips A variety of suitable processes have been developed. On complete cutting of the material of the wafer takes place when using diamond saw blade, laser beam, ultra sonic cutting tool, water jet or caustic solution. Becomes the wafer with a saw blade or with a laser beam only partially severed (creating a notch or crack), can it was then broken into chips using a roller become. Instead, trenches can be made with an etching solution are etched along the dividing lines at which the wafer is then is divided using ultrasound. When separating the chips are cut through the required sawing area Wafers consumed that are not used for components can; in addition, the reject rate is too high.

Vorrichtungen und Verfahren zum Vereinzeln von Chips sind z. B. aus US 5,026,960, US 3,863,333 und JP 10-163134 be­ kannt.Devices and methods for dicing chips are z. B. from US 5,026,960, US 3,863,333 and JP 10-163134 be known.

Aufgabe der vorliegenden Erfindung ist es, ein Verfahren zum Vereinzeln von Halbleiterchips aus einem Wafer anzugeben, mit dem der Anteil nicht verwertbarer Fläche des Wafers möglichst gering gehalten wird, das einen hohen Durchsatz bei gleichmä­ ßiger Trennqualität garantiert und mit dem Mikrorisse und Ausbrüche vermieden werden. The object of the present invention is to provide a method for Indicate semiconductor chips from a wafer, with where possible the proportion of unusable area of the wafer is kept low, the high throughput at even guaranteed separation quality and with the micro cracks and Outbreaks can be avoided.  

Bei dem erfindungsgemäßen Verfahren wird das Grundmaterial des Wafers entlang vorgesehener Trennlinien ("Sägestraßen") durch einen Laserstrahl in an sich bekannter Weise angeritzt und anschließend im Ultraschallbad in an sich bekannter Weise gebrochen, so dass der gesamte Wafer in die Halbleiterchips zerteilt wird. Das gestattet die Verwendung eines extrem schmalen Sägerahmens, dessen Breite bei Bearbeitung auf der prozessierten Seite durch den kleinen Brennfleck des stark fokussierten Laserstrahls bestimmt ist, und zwar unabhängig von der Dicke des Grundmaterials. Wird der Wafer rückseitig mit dem Laser angeritzt, können noch schmälere Sägerahmen realisiert werden, deren Breite nurmehr von der mechanischen Präzision des Vorschubs abhängt. Die Bearbeitungszeit kann kurz gehalten werden, da mit dem Laserstrahl nur wenig Mate­ rial abgetragen werden muss und im Ultraschallbad sämtliche Chips gleichzeitig vereinzelt werden können, ebenfalls unab­ hängig von der Dicke des Grundmaterials. Eine damit erzielba­ re gleichbleibend hohe Trennqualität mit glatten Trennkanten und die Reduzierung auftretender Mikrorisse und Ausbrüche vermindert die Quote an produziertem Ausschuss. Bei kleinen Chips, insbesondere bei Dioden als Einzelhalbleiterbauele­ ment, ist der Anteil an eingesparter Fläche im Verhältnis zu der gesamten Waferfläche besonders hoch. Diese Vorteile des erfindungsgemäßen Verfahrens können beim herkömmlichen Bre­ chen des angeritzten Wafers mittels einer Walze oder derarti­ ger dafür vorgesehener bekannter Vorrichtungen nicht erreicht werden.In the method according to the invention, the base material of the wafer along the provided dividing lines ("saw streets") scratched by a laser beam in a manner known per se and then in an ultrasonic bath in a manner known per se broken, so the entire wafer into the semiconductor chips is divided. That allows the use of an extreme narrow saw frame, the width of which is processed on the processed side by the small focal spot of the stark focused laser beam is determined, independently on the thickness of the base material. The back of the wafer scratched with a laser can make even narrower saw frames can be realized, the width of which only depends on the mechanical Precision of the feed depends. The processing time can be kept short because the laser beam only has a small amount of mate rial and all in an ultrasonic bath Chips can be separated at the same time, also independent depending on the thickness of the base material. A achievable with it re consistently high separation quality with smooth separation edges and the reduction of micro cracks and breakouts reduces the quota of rejects produced. With small ones Chips, especially in the case of diodes as single semiconductor components ment, is the proportion of space saved in relation to of the entire wafer area is particularly high. These advantages of The inventive method can be in the conventional Bre chen of the scribed wafer by means of a roller or similar ger intended devices not achieved become.

Claims (1)

Verfahren zum Vereinzeln von Halbleiterchips aus einem Wafer, bei dem
in einem ersten Schritt der Wafer entlang vorgesehener Trenn­ linien mittels eines Laserstrahles geritzt wird und
in einem zweiten Schritt in einem Ultraschallbad der Wafer in die Halbleiterchips zerteilt wird.Method for separating semiconductor chips from a wafer, in which
in a first step, the wafer is scratched along the separation lines provided by means of a laser beam and
in a second step, the wafer is divided into the semiconductor chips in an ultrasonic bath.
DE2000131524 2000-06-28 2000-06-28 Method for separating semiconductor chips from wafer, involves initially scribing separation lines on wafer by laser beam Ceased DE10031524A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2000131524 DE10031524A1 (en) 2000-06-28 2000-06-28 Method for separating semiconductor chips from wafer, involves initially scribing separation lines on wafer by laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2000131524 DE10031524A1 (en) 2000-06-28 2000-06-28 Method for separating semiconductor chips from wafer, involves initially scribing separation lines on wafer by laser beam

Publications (1)

Publication Number Publication Date
DE10031524A1 true DE10031524A1 (en) 2002-01-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000131524 Ceased DE10031524A1 (en) 2000-06-28 2000-06-28 Method for separating semiconductor chips from wafer, involves initially scribing separation lines on wafer by laser beam

Country Status (1)

Country Link
DE (1) DE10031524A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10122839B4 (en) * 2001-05-11 2007-11-29 Qimonda Ag Process for separating semiconductor structures and semiconductor substrate prepared for singulation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3991296A (en) * 1974-11-15 1976-11-09 Nippon Electric Company, Ltd. Apparatus for forming grooves on a wafer by use of a laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3991296A (en) * 1974-11-15 1976-11-09 Nippon Electric Company, Ltd. Apparatus for forming grooves on a wafer by use of a laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10122839B4 (en) * 2001-05-11 2007-11-29 Qimonda Ag Process for separating semiconductor structures and semiconductor substrate prepared for singulation

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