DE10017834A1 - Electrically controlled light attenuator for laser annealing of targeted prosecuting missile, has upper and lower layers of doped semiconductor material that are switched when electric voltage is applied by inducing charge carriers - Google Patents

Electrically controlled light attenuator for laser annealing of targeted prosecuting missile, has upper and lower layers of doped semiconductor material that are switched when electric voltage is applied by inducing charge carriers Download PDF

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DE10017834A1
DE10017834A1 DE2000117834 DE10017834A DE10017834A1 DE 10017834 A1 DE10017834 A1 DE 10017834A1 DE 2000117834 DE2000117834 DE 2000117834 DE 10017834 A DE10017834 A DE 10017834A DE 10017834 A1 DE10017834 A1 DE 10017834A1
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Prior art keywords
semiconductor material
light attenuator
layer
doped semiconductor
charge carriers
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DE2000117834
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German (de)
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Kurt Büttner
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Diehl BGT Defence GmbH and Co KG
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Diehl BGT Defence GmbH and Co KG
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
    • G02F2201/083—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer infrared absorbing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/12—Function characteristic spatial light modulator
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/48—Variable attenuator
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/52—Optical limiters

Abstract

The attenuator (30) has a layer stack (10) with an upper layer (12) of doped semiconductor material, an insulating layer (16) and a lower layer (20) of doped semiconductor material. The upper and lower layers of doped semiconductor material are switched when electric voltage is applied by inducing charge carriers from transmissive state in which the charge carriers are transparent to radiation in predetermined wavelength range and absorptive state in which the charge carriers absorb radiation of specific wavelength range. The semiconductor material is silicon.

Description

Die Erfindung betrifft einen elektrisch gesteuerten Lichtabschwächer.The invention relates to an electrically controlled light attenuator.

Insbesondere betrifft die Erfindung einen Lichtabschwächer zur ”Laserhärtung” von Infrarot-Suchköpfen bei zielverfolgenden Lenkflugkörpern.In particular, the invention relates to a light attenuator for "laser hardening" of infrared seekers in target-tracking missiles.

Wenn ein Lenkflugkörper ein Ziel, z. B. ein feindliches Flugzeug, anfliegt, dann wird dies von dem Ziel erkannt. Das Ziel trifft dann ”Gegenmaßnahmen”. Eine solche Gegenmaßnahme besteht darin, einen hochintensiven Laserstrahl mit einer Wellenlänge, auf die der Suchkopf des Lenkflugkörpers anspricht, auf den Flugkörper zu richten. Durch einen solchen Laserstrahl, der auf den Detektor des Suchkopfes fällt, den Detektor des Suchkopfes zu blenden oder zu zerstören. Gelingt dies, kann der Lenkflugkörper das Ziel verlieren. Aus diesem Grunde sind in dem Flugkörper wiederum ”Gegen-Gegenmaßnahmen” getroffen, um eine solche Blendung oder Zerstörung des Detektors zu verhindern. Solche Gegen-Gegenmaßnahmen bestehen darin, die übermäßige Intensität des Laserstrahls durch einen zweiten Detektor, der weniger empfindlich ist als der Suchkopf-Detektor festzustellen und dann einen vor dem Suchkopf-Detektor angeordneten Lichtabschwächer zu aktivieren.When a missile misses a target, such as a B. an enemy aircraft, flies, then this is detected by the target. The goal then meets "countermeasures". One such countermeasure is to direct a high intensity laser beam having a wavelength to which the seeker's head of the missile responds to the missile. By such a laser beam incident on the detector of the seeker head to dazzle or destroy the detector of the seeker head. If this succeeds, the guided missile may lose the target. For this reason, "counter-countermeasures" are again taken in the missile to prevent such glare or destruction of the detector. Such countermeasures are to detect the excessive intensity of the laser beam by a second detector, which is less sensitive than the seeker head detector, and then to activate a light attenuator located in front of the seeker head detector.

Der Erfindung liegt die Aufgabe zugrunde, für solche und andere Zwecke einen praktisch trägheitslos reagierenden, elektrisch gesteuerten Lichtabschwächer zu schaffen.The invention has for its object to provide for such and other purposes a virtually inertia-responsive, electrically controlled light attenuator.

Erfindungsgemäß wird diese Aufgabe gelöst durch einen elektrisch gesteuerten Lichtabschwächer enthaltend ein Schichtpaket mit einer ersten Schicht von dotiertem Halbleitermaterial einer Isolierschicht und einer zweiten Schicht von dotiertem Halbleitermaterial, wobei die erste und die zweite Schicht von dotiertem Halbleitermaterial bei Anlegen einer elektrischen Spannung durch Induzieren von Ladungsträgern aus einem transmissiven Zustand, in welchem sie für Strahlung in einem vorgegebenen Wellenlängenbereich transparent sind, in einen absorptiven Zustand umschaltbar sind, in welchem sie die Strahlung dieses Wellenlängenbereiches absorbieren.According to the invention, this object is achieved by an electrically controlled light attenuator comprising a layer package having a first layer of doped semiconductor material of an insulating layer and a second layer of doped semiconductor material, wherein the first and the second layer of doped semiconductor material upon application of an electrical voltage by inducing charge carriers a transmissive state, in which they are transparent to radiation in a predetermined wavelength range, are switchable into an absorptive state, in which they absorb the radiation of this wavelength range.

Das Schichtpaket wirkt bei Anlegen einer Spannung wie ein Kondensator, dessen Platten von den dotierten Schichten gebildet sind. Dadurch werden in den dotierten Schichten elektrische Ladungsträger gebildet, durch welche Strahlung absorbiert wird. Dadurch kann mittels einer angelegten Steuerspannung der Lichtabschwächer praktisch verzögerungslos lichtundurchlässig gemacht werden.When a voltage is applied, the layer packet acts like a capacitor whose plates are formed by the doped layers. As a result, electrical charge carriers are formed in the doped layers, by means of which radiation is absorbed. As a result, by means of an applied control voltage, the light attenuator can be made virtually impervious to light.

Bei einem Suchkopf eines Lenkflugkörpers kann die Spannung von dem zweiten, weniger empfindlichen Detektor auch praktisch verzögerungslos eingeschaltet werden, so daß auch ein gepulster Hochenergie-Laserstrahl nicht zu einer Zerstörung des Suchkopf-Detektors führen kann.With a seeker head of a guided missile, the voltage from the second, less sensitive detector can also be switched on virtually instantaneously, so that even a pulsed high-energy laser beam can not lead to destruction of the seeker head detector.

Die Anwendbarkeit der Erfindung ist aber nicht auf ”Laserhärtung” beschränkt. Die Erfindung könnte z. B. auch bei der Kurzzeit-Photographie oder ähnlichem angewandt werden.However, the applicability of the invention is not limited to "laser hardening". The invention could, for. B. also be used in the short-term photography or the like.

Ausgestaltungen der Erfindung sind Gegenstand der Unteransprüche.Embodiments of the invention are the subject of the dependent claims.

Ausführungsbeispiele der Erfindung sind nachstehend unter Bezugnahme auf die zugehörigen Zeichnungen näher erläutert.Embodiments of the invention are explained below with reference to the accompanying drawings.

1 zeigt schematisch einen Querschnitt eines elektrisch gesteuerten Lichtabschwächers. 1 schematically shows a cross section of an electrically controlled Lichtabschwächers.

2 zeigt in ähnlicher Darstellung wie 1 einen als Matrix ausgebildeten Lichtabschwächer. 2 shows in a similar representation as 1 a trained as a matrix light attenuator.

3 zeigt die Anordnung des Lichtabschwächers in einem Strahlengang, in welchem eine im Unendlichen liegende Objektszene auf einem bildauflösenden Detektor abgebildet wird. 3 shows the arrangement of the light attenuator in a beam path in which an infinite object scene is imaged on an image-resolving detector.

In 1 ist mit 10 ein Schichtpaket bezeichnet, das als elektrisch gesteuerter Lichtabschwächer dient. Das Schichtpaket 10 enthält – von oben nach unten – eine erste dotierte Halbleiterschicht 12, eine erste undotierte Halbleiterschicht 14, eine Isolierschicht 16, eine zweite undotierte Halbleiterschicht 18 und eine zweite dotierte Halbleiterschicht 20. Die dotierten und undotierten Halbleiterschichten 12, 14, 18 und 20 bestehen aus dotiertem bzw. undotiertem Silizium. Die Isolierschicht besteht aus siliziumnitritähnlichem Material als Isolationsmaterial. Zwischen die dotierten Halbleiterschichten 12 und 20 ist wahlweise eine elektrische Spannung anlegbar. Wie durch die Pfeile 22 angedeutet ist, ist der beschriebene elektrisch gesteuerte Lichtabschwächer im Strahlengang einer abzuschwächenden infraroten Strahlung angeordnet.In 1 is with 10 a layer package referred to, which serves as an electrically controlled light attenuator. The shift package 10 contains - from top to bottom - a first doped semiconductor layer 12 , a first undoped semiconductor layer 14 , an insulating layer 16 , a second undoped semiconductor layer 18 and a second doped semiconductor layer 20 , The doped and undoped semiconductor layers 12 . 14 . 18 and 20 consist of doped or undoped silicon. The insulating layer consists of Siliziumnitritähnlichem material as insulation material. Between the doped semiconductor layers 12 and 20 is optionally an electrical voltage can be applied. As by the arrows 22 is indicated, the described electrically controlled light attenuator in the beam path of an attenuated infrared radiation is arranged.

Der beschriebene Lichtabschwächer ist normalerweise für die infrarote Strahlung 22 durchlässig. Das gilt sowohl für das dotierte und das undotierte Silizium als auch für das siliziumnitritähnliche Material der Isolierschicht. Wenn zwischen die dotierten Schichten 12 und 20 eine Spannung angelegt wird, dann wirkt das Schichtpaket 10 wie ein Kondensator. Dadurch werden in den dotierten Schichten 12 und 20 Ladungsträger gebildet. Diese Ladungsträger bewirken eine Absorption der infraroten Strahlung. Die infrarote Strahlung wird abgeschwächt, ggf. vollständig unterdrückt.The described light attenuator is normally for the infrared radiation 22 permeable. This applies both to the doped and undoped silicon and to the silicon nitride-like material of the insulating layer. If between the doped layers 12 and 20 a voltage is applied, then acts the layer package 10 like a capacitor. This will be in the doped layers 12 and 20 Charge carrier formed. These charge carriers cause absorption of the infrared radiation. The infrared radiation is attenuated, possibly completely suppressed.

2 zeigt einen Lichtabschwächer, der eine Matrix oder zweidimensionale Anordnung von einzelnen Lichtabschwächer-Elementen 24 bildet. Jedes dieser Lichtabschwächer-Elemente ist für sich in der oben mit Bezugnahme auf 1 beschriebenen Weise aufgebaut. Die Lichtabschwächer-Elemente werden einzeln über eine geeignete (nicht dargestellte) Elektronik angesteuert. Es ist auf diese Weise möglich, bestimmte, besonders helle Bereiche eines Bildes der Objektszene für sich abzuschwächen. 2 shows a light attenuator, which is a matrix or two-dimensional array of individual light attenuator elements 24 forms. Each of these light attenuator elements is self-explanatory in the above 1 constructed way described. The light attenuator elements are controlled individually via a suitable (not shown) electronics. It is possible in this way to attenuate certain, particularly bright areas of an image of the object scene for themselves.

3 zeigt schematisch die Anordnung des beschriebenen elektrisch gesteuerten Lichtabschwächers im Strahlengang eines Suchkopfes. Mit 26 ist ein abbildendes optisches System bezeichnet, welches eine im Unendlichen liegende Objektszene auf einen bildauflösenden Detektor 28 abbildet. Unmittelbar vor dem Detektor 28 ist im Strahlengang der elektrisch gesteuerte Abschwächer 30 angeordnet. 3 schematically shows the arrangement of the described electrically controlled Lichtabschwächers in the beam path of a seeker head. With 26 is an imaging optical system which denotes an infinite object scene on an image-resolving detector 28 maps. Immediately in front of the detector 28 is in the beam path of the electrically controlled attenuator 30 arranged.

Claims (6)

Elektrisch gesteuerter Lichtabschwächer enthaltend ein Schichtpaket (10) mit einer ersten Schicht (12) von dotiertem Halbleitermaterial einer Isolierschicht (16) und einer zweiten Schicht (20) von dotiertem Halbleitermaterial, wobei die erste und die zweite Schicht (12, 20) von dotiertem Halbleitermaterial bei Anlegen einer elektrischen Spannung durch Induzieren von Ladungsträgern aus einem transmissiven Zustand, in welchem sie für Strahlung in einem vorgegebenen Wellenlängenbereich transparent sind, in einen absorptiven Zustand umschaltbar sind, in welchem sie die Strahlung dieses Wellenlängenbereiches absorbieren.Electrically controlled light attenuator comprising a layer package ( 10 ) with a first layer ( 12 ) of doped semiconductor material of an insulating layer ( 16 ) and a second layer ( 20 ) of doped semiconductor material, wherein the first and second layers ( 12 . 20 ) of doped semiconductor material upon application of an electrical voltage by inducing charge carriers from a transmissive state in which they are transparent to radiation in a predetermined wavelength range, are switchable to an absorptive state in which they absorb the radiation of that wavelength range. Lichtabschwächer nach Anspruch 1, dadurch gekennzeichnet, daß zwischen der ersten Schicht (12) bzw. der zweiten Schicht (20) und der Isolierschicht (16) jeweils eine Schicht (14, 18) von undotiertem Halbleitermaterial vorgesehen ist.Light attenuator according to claim 1, characterized in that between the first layer ( 12 ) or the second layer ( 20 ) and the insulating layer ( 16 ) one layer each ( 14 . 18 ) is provided by undoped semiconductor material. Lichtabschwächer nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Schichten (12, 14, 16, 18, 20) im transmissiven Zustand für infrarote Strahlung transparent sind.Light attenuator according to claim 1 or 2, characterized in that the layers ( 12 . 14 . 16 . 18 . 20 ) are transparent to infrared radiation in the transmissive state. Lichtabschwächer nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß das Halbleitermaterial Silizium ist.Light attenuator according to one of claims 1 to 3, characterized in that the semiconductor material is silicon. Lichtabschwächer nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die Isolierschicht (16) aus siliziumnitritähnlichem Material besteht.Light attenuator according to one of Claims 1 to 4, characterized in that the insulating layer ( 16 ) consists of Siliziumnitritähnlichem material. Lichtabschwächer nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß der Lichtabschwächer eine Matrix von Lichtabschwächer-Elementen (24) bildet, die einzeln ansteuerbar sind.Light attenuator according to one of Claims 1 to 5, characterized in that the light attenuator comprises a matrix of light attenuator elements ( 24 ), which are individually controllable.
DE2000117834 2000-04-11 2000-04-11 Electrically controlled light attenuator for laser annealing of targeted prosecuting missile, has upper and lower layers of doped semiconductor material that are switched when electric voltage is applied by inducing charge carriers Pending DE10017834A1 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109275336A (en) * 2016-04-29 2019-01-25 唯景公司 The calibration of electrical parameter in optical switchable fenestra
US10969646B2 (en) 2013-06-28 2021-04-06 View, Inc. Controlling transitions in optically switchable devices
US11112674B2 (en) 2013-06-28 2021-09-07 View, Inc. Controlling transitions in optically switchable devices
US11592724B2 (en) 2012-04-17 2023-02-28 View, Inc. Driving thin film switchable optical devices
US11630367B2 (en) 2011-03-16 2023-04-18 View, Inc. Driving thin film switchable optical devices
US11640096B2 (en) 2011-03-16 2023-05-02 View, Inc. Multipurpose controller for multistate windows
US11668991B2 (en) 2011-03-16 2023-06-06 View, Inc. Controlling transitions in optically switchable devices

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US5608568A (en) * 1994-04-11 1997-03-04 The Johns Hopkins University Thin film vanadium oxide spatial light modulators and methods
DE19627448A1 (en) * 1996-03-29 1997-10-09 Thilo Armbrecht Light valve with capacitor structure, e.g. electro-absorption modulator
JP2007140429A (en) * 2005-10-18 2007-06-07 Casio Comput Co Ltd Zoom lens

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608568A (en) * 1994-04-11 1997-03-04 The Johns Hopkins University Thin film vanadium oxide spatial light modulators and methods
DE19627448A1 (en) * 1996-03-29 1997-10-09 Thilo Armbrecht Light valve with capacitor structure, e.g. electro-absorption modulator
JP2007140429A (en) * 2005-10-18 2007-06-07 Casio Comput Co Ltd Zoom lens

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11630367B2 (en) 2011-03-16 2023-04-18 View, Inc. Driving thin film switchable optical devices
US11668991B2 (en) 2011-03-16 2023-06-06 View, Inc. Controlling transitions in optically switchable devices
US11640096B2 (en) 2011-03-16 2023-05-02 View, Inc. Multipurpose controller for multistate windows
US11592724B2 (en) 2012-04-17 2023-02-28 View, Inc. Driving thin film switchable optical devices
US11927867B2 (en) 2012-04-17 2024-03-12 View, Inc. Driving thin film switchable optical devices
US11579509B2 (en) 2013-06-28 2023-02-14 View, Inc. Controlling transitions in optically switchable devices
US11112674B2 (en) 2013-06-28 2021-09-07 View, Inc. Controlling transitions in optically switchable devices
US10969646B2 (en) 2013-06-28 2021-04-06 View, Inc. Controlling transitions in optically switchable devices
US11829045B2 (en) 2013-06-28 2023-11-28 View, Inc. Controlling transitions in optically switchable devices
US11835834B2 (en) 2013-06-28 2023-12-05 View, Inc. Controlling transitions in optically switchable devices
US11482147B2 (en) 2016-04-29 2022-10-25 View, Inc. Calibration of electrical parameters in optically switchable windows
CN109275336A (en) * 2016-04-29 2019-01-25 唯景公司 The calibration of electrical parameter in optical switchable fenestra
US11030929B2 (en) 2016-04-29 2021-06-08 View, Inc. Calibration of electrical parameters in optically switchable windows

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