DE10011974A1 - Micro-technological current sensor assembly, has conductors arranged closely in line on run-around frame and fixed by insulating plastic cover, after which run-around frame is removed - Google Patents
Micro-technological current sensor assembly, has conductors arranged closely in line on run-around frame and fixed by insulating plastic cover, after which run-around frame is removedInfo
- Publication number
- DE10011974A1 DE10011974A1 DE2000111974 DE10011974A DE10011974A1 DE 10011974 A1 DE10011974 A1 DE 10011974A1 DE 2000111974 DE2000111974 DE 2000111974 DE 10011974 A DE10011974 A DE 10011974A DE 10011974 A1 DE10011974 A1 DE 10011974A1
- Authority
- DE
- Germany
- Prior art keywords
- current
- run
- sensor
- conductor
- current sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/207—Constructional details independent of the type of device used
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Die Erfindung betrifft die Aufbau- und Verbindungstechnik eines Stromsensors der Mikro systemtechnik.The invention relates to the construction and connection technology of a current sensor of the micro system technology.
Mit speziell dazu entwickelten Stromsensoren werden die Ströme über ihr Magnetfeld mit
Magnetfeldsensoren (Hallsensoren) gemessen, die in einer Standard-CMOS-Technologie
implementiert sind. Durch die Verwendung der Standardtechnologie können die Sensoren
kostengünstig gefertigt werden und es ist eine umfangreiche Signalverarbeitung möglich,
d. h. es können zusätzliche Funktionen dem Sensor mitgegeben werden, wie
With specially developed current sensors, the currents are measured via their magnetic field with magnetic field sensors (Hall sensors), which are implemented in a standard CMOS technology. By using the standard technology, the sensors can be manufactured inexpensively and extensive signal processing is possible, ie additional functions can be given to the sensor, such as
- - Separieren von Ableitströmen,- separation of leakage currents,
- - Messen und Anzeigen der Leiterströme,- measuring and displaying the conductor currents,
- - Setzen von vorgebbaren Schwellen, die bei Erreichen zur Vorwarnung oder zum Ab schalten genutzt werden und dem Lastmanagement dienen können,- Setting predeterminable thresholds, which, when reached, are used for warning or down switching and can be used for load management,
- - Ansteuern einer Datenschnittstelle,Control of a data interface,
- - Überprüfung von PE- und N-Leiter.- Check of PE and N conductors.
Bei der Messung des elektrischen Stromes über die Magnetfeldmessung mit z. B. Hallsen soren o. ä. gibt es eine ganze Reihe möglicher Aufbauvarianten, die sich durch den nutz baren Meßbereich, die erreichbare Auflösung und die realisierbare Isolationsfestigkeit unter scheiden.When measuring the electrical current via the magnetic field measurement with z. B. Hallsen sensors or the like, there is a whole range of possible construction variants that can be used measurable measuring range, the achievable resolution and the realizable insulation strength under divorce.
Bei der einfachsten Version wird der Stromleiter direkt auf dem Chip realisiert. Durch den geringen Abstand zwischen Stromleiter und Sensor läßt sich mit dieser Anordnung die höchste Genauigkeit erreichen. Der maximale Meßstrom ist in diesem Fall durch die Strom tragfähigkeit der Metallisierung begrenzt.In the simplest version, the current conductor is implemented directly on the chip. By the With this arrangement, the small distance between the conductor and the sensor can be achieve maximum accuracy. The maximum measuring current in this case is the current load capacity of the metallization is limited.
Höhere Ströme können gemessen werden, wenn der Stromleiter nicht monolithisch integriert wird. Mit externen Leitern können prinzipiell sehr hohe Ströme gemessen werden. Die er reichbare Auflösung hängt jeweils vom Abstand des Sensorchips zur Mitte des Stromleiters ab.Higher currents can be measured if the current conductor is not integrated monolithically becomes. In principle, very high currents can be measured with external conductors. Which he Reachable resolution depends on the distance between the sensor chip and the center of the conductor from.
Bei mehrpoligen Sensoren ist die geringe Entfernung der Leiter untereinander ebenso wich tig wie der enge Abstand der Stromleiter zum Sensorchip. Auch hier beeinflußt ein geringer Abstand die Empfindlichkeit gegen Fremdfelder.With multi-pole sensors, the short distance between the conductors is equally important like the close distance between the current conductor and the sensor chip. Here too, a minor influence Distance the sensitivity to external fields.
Es besteht also die Erfordernis, daß die Hallsensoren dicht an die Stromleiter herangebracht werden, d. h. eine enge räumliche Verbindung von hohen Spannungen (einige hundert Volt) und hohen Strömen (im Kurzschlußfall einige kA) der Netzseite mit den geringen Spannun gen und Strömen der Siliziumtechnologie auf der Sensorseite. Zwischen diesen unterschiedlichen Seiten muß trotz des von der Meßtechnik geforderten geringen Abstandes eine sichere elektrische Trennung gegeben sein.There is therefore a requirement that the Hall sensors be brought close to the current conductors become, d. H. a close spatial connection of high voltages (a few hundred volts) and high currents (in the event of a short circuit a few kA) on the network side with the low voltages and flows of silicon technology on the sensor side. Between these different Pages must be one despite the small distance required by the measuring technology safe electrical isolation.
Die Position der Stromleiter muß möglichst exakt über den ganzen Temperaturbereich und die gesamte Betriebsdauer gehalten werden. Dabei können mechanische Einflüsse wirken, wie die elektrodynamischen Kräfte aus der parallelen, engen Leiterführung und den hohen Kurzschlußströmen, oder thermische Einflüsse durch die hohen Leiterströme und die unter schiedlichen thermischen Ausdehnungskoeffizienten der eingesetzten Materialien.The position of the current conductors must be as precise as possible over the entire temperature range and the entire operating time can be kept. Mechanical influences can act like the electrodynamic forces from the parallel, narrow conductor routing and the high Short-circuit currents, or thermal influences due to the high conductor currents and the different coefficients of thermal expansion of the materials used.
Aufgabe der Erfindung ist es, eine Aufbau- und Verbindungstechnik zu finden, die den ge ringen Abstand zwischen den Sensoren und den Leitern, sowie den Leitern zueinander er laubt und dabei die elektrische und mechanische Festigkeit über die gesamte Betriebsdauer garantiert.The object of the invention is to find a construction and connection technology that the ge wrestle distance between the sensors and the conductors, as well as the conductors to each other leaves and thereby the electrical and mechanical strength over the entire service life guaranteed.
Diese Aufgabe wird erfindungsgemäß durch den kennzeichnenden Teil des Patentanspru ches 1 gelöst.This object is achieved by the characterizing part of the patent ches 1 solved.
Die geringen Abstände zu den Hallsensoren und zueinander werden mit einer speziellen Ausgestaltung der Erregerleiter und durch die Überkopfmontage des Sensorchips (Flip- Chip-Montage) erreicht.The short distances to the Hall sensors and to each other are determined with a special Design of the excitation conductor and through the overhead mounting of the sensor chip (flip Chip assembly) reached.
Die Erfindung wird anhand der Abbildungen erläutert.The invention is illustrated by the figures.
Es zeigt:It shows:
Abb. 1 die im Verbund mit einem umlaufenden Rahmen 1A gefertigten Stromleiter 1. Fig. 1 the current conductor 1 manufactured in conjunction with a peripheral frame 1 A.
Abb. 2 die mit einer Kunststoffumhüllung 2 versehenen Stromleiter 1, nachdem der Rahmen 1A abgetrennt wurde. Fig. 2, the current conductor 1 provided with a plastic sheath 2 after the frame 1 A has been separated.
Abb. 3 einen Schnitt durch die mit einer Kunststoffumhüllung 2 versehenen Stromleiter 1. Fig. 3 shows a section through the current conductor 1 provided with a plastic sheath 2 .
Abb. 4 die Baueinheit der Stromleiter 1 mit Kunststoffumhüllung 2, eingesetzt in eine Keramikplatte 4, an der der Sensor und die Bauteile des Schaltnetzteiles 5 angeordnet sind. Fig. 4 shows the structural unit of the current conductor 1 with a plastic sheath 2 , inserted into a ceramic plate 4 on which the sensor and the components of the switching power supply 5 are arranged.
Abb. 5 die Baueinheit der Stromleiter 1 mit Kunststoffumhüllung 2, in MID-Technik mit dem Sensor 3 und den Bauteilen des Schaltnetzteiles 5 bestückt. Fig. 5, the assembly of the current conductor 1 with plastic sheathing 2 , in MID technology equipped with the sensor 3 and the components of the switching power supply 5 .
Bei der MID-Technologie wird die LCP-Umspritzung gleichzeitig als Isolierung, Leiterfixie rung und Schaltungsträger für die Flip-Chip-Montage genutzt.With MID technology, LCP encapsulation is also used as insulation, conductor fixie tion and circuit carrier used for flip-chip assembly.
In dieser Technologie der dreidimensionalen spritzgegossenen Schaltungsträger werden hochtemperaturfeste Thermoplaste mit strukturierten Metallisierungen versehen, d. h. Leiterbahnen und Kontaktierungspads werden auf dem Kunststoff aufgebracht. In this technology, the three-dimensional injection molded circuit carriers will be high-temperature resistant thermoplastics with structured metallizations, d. H. Conductor tracks and contact pads are applied to the plastic.
Die Vorteile liegen zum einen in der höheren Sicherheit der Spannungsfestigkeit - homoge ner Aufbau, weniger Trennstellen zwischen unterschiedlichen Materialien - zum anderen in der einfacheren Gestaltungsmöglichkeit der Stromleiter, die in einer Ebene an der Sensor herangeführt und deshalb kostengünstiger gefertigt werden können.The advantages lie on the one hand in the higher security of the dielectric strength - homogeneous structure, fewer separation points between different materials - on the other hand in the simpler design option of the current conductor, which is on one level at the sensor introduced and can therefore be manufactured more cost-effectively.
11
Stromleiter
Conductor
11
A Rahmen
A frame
22
Kunststoffumhüllung
Plastic wrapping
33rd
Sensor
sensor
44
Keramikplatte
Ceramic plate
55
Bauteile des Schaltnetzteiles
Switching power supply components
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000111974 DE10011974A1 (en) | 2000-03-11 | 2000-03-11 | Micro-technological current sensor assembly, has conductors arranged closely in line on run-around frame and fixed by insulating plastic cover, after which run-around frame is removed |
DE10065965A DE10065965B4 (en) | 2000-03-11 | 2000-03-11 | Production method for a current sensor of the microsystem technology |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000111974 DE10011974A1 (en) | 2000-03-11 | 2000-03-11 | Micro-technological current sensor assembly, has conductors arranged closely in line on run-around frame and fixed by insulating plastic cover, after which run-around frame is removed |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10011974A1 true DE10011974A1 (en) | 2001-09-27 |
Family
ID=7634407
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2000111974 Ceased DE10011974A1 (en) | 2000-03-11 | 2000-03-11 | Micro-technological current sensor assembly, has conductors arranged closely in line on run-around frame and fixed by insulating plastic cover, after which run-around frame is removed |
DE10065965A Expired - Fee Related DE10065965B4 (en) | 2000-03-11 | 2000-03-11 | Production method for a current sensor of the microsystem technology |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10065965A Expired - Fee Related DE10065965B4 (en) | 2000-03-11 | 2000-03-11 | Production method for a current sensor of the microsystem technology |
Country Status (1)
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DE (2) | DE10011974A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10315532A1 (en) * | 2003-04-04 | 2004-11-11 | Infineon Technologies Ag | Current sensing integrated circuit has two magnetic field sensor chips arranged on opposing sides of framework and an evaluation unit all contained within sensor housing |
DE10333089A1 (en) * | 2003-07-21 | 2005-03-03 | Infineon Technologies Ag | Current processor unit has housing containing conductor and signal areas with chip running temperature compensation program connected through bond wires to current and signal pins |
DE102004021862A1 (en) * | 2004-05-04 | 2005-12-01 | Infineon Technologies Ag | Current sensor has two lead frames each having a magnetic field sensor chip that are attached to the frame opposite one another |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3805856A1 (en) * | 1988-02-25 | 1989-09-07 | Bayer Ag | THERMOPLASTIC BLOCK COPOLYMERS OF VINYL OR VINYLIDE POLYMER SEGMENTS AND SEGMENTS OF LIQUID CRYSTALLINE POLYMERS |
EP0537419A1 (en) * | 1991-10-09 | 1993-04-21 | Landis & Gyr Business Support AG | Device comprising an integrated magnetic field sensor and first and second magnetic flux concentrator, and method to build into a container of synthetic material a plurality of these devices |
DE4208758A1 (en) * | 1992-03-19 | 1993-09-23 | Basf Ag | Polyarylene-ether] sulphone(s) and polyarylene-ether] ketone(s) - useful for encapsulating electrical and electronic components |
EP0421005B1 (en) * | 1988-02-10 | 1997-02-12 | Olin Corporation | Process of assembling an electronic package |
WO1999014605A1 (en) * | 1997-09-15 | 1999-03-25 | Institute Of Quantum Electronics | A current monitor system and a method for manufacturing it |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5041780A (en) * | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
DE4141386C2 (en) * | 1991-12-16 | 1995-06-29 | Itt Ind Gmbh Deutsche | Hall sensor |
-
2000
- 2000-03-11 DE DE2000111974 patent/DE10011974A1/en not_active Ceased
- 2000-03-11 DE DE10065965A patent/DE10065965B4/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0421005B1 (en) * | 1988-02-10 | 1997-02-12 | Olin Corporation | Process of assembling an electronic package |
DE3805856A1 (en) * | 1988-02-25 | 1989-09-07 | Bayer Ag | THERMOPLASTIC BLOCK COPOLYMERS OF VINYL OR VINYLIDE POLYMER SEGMENTS AND SEGMENTS OF LIQUID CRYSTALLINE POLYMERS |
EP0537419A1 (en) * | 1991-10-09 | 1993-04-21 | Landis & Gyr Business Support AG | Device comprising an integrated magnetic field sensor and first and second magnetic flux concentrator, and method to build into a container of synthetic material a plurality of these devices |
DE4208758A1 (en) * | 1992-03-19 | 1993-09-23 | Basf Ag | Polyarylene-ether] sulphone(s) and polyarylene-ether] ketone(s) - useful for encapsulating electrical and electronic components |
WO1999014605A1 (en) * | 1997-09-15 | 1999-03-25 | Institute Of Quantum Electronics | A current monitor system and a method for manufacturing it |
Non-Patent Citations (1)
Title |
---|
HEIDENREICH, W.: Aufbautechniken für Halbleiter- Magnetfeldsensoren. In: tm, 56, 1989, H. 11, S. 436ff. * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10315532A1 (en) * | 2003-04-04 | 2004-11-11 | Infineon Technologies Ag | Current sensing integrated circuit has two magnetic field sensor chips arranged on opposing sides of framework and an evaluation unit all contained within sensor housing |
DE10315532B4 (en) * | 2003-04-04 | 2014-08-14 | Infineon Technologies Ag | Integrated-type current sensor device and method of manufacturing |
DE10333089A1 (en) * | 2003-07-21 | 2005-03-03 | Infineon Technologies Ag | Current processor unit has housing containing conductor and signal areas with chip running temperature compensation program connected through bond wires to current and signal pins |
DE10333089B4 (en) * | 2003-07-21 | 2016-12-29 | Infineon Technologies Ag | Current evaluation device and method for producing the same |
DE102004021862A1 (en) * | 2004-05-04 | 2005-12-01 | Infineon Technologies Ag | Current sensor has two lead frames each having a magnetic field sensor chip that are attached to the frame opposite one another |
DE102004021862B4 (en) * | 2004-05-04 | 2014-08-07 | Infineon Technologies Ag | current Senor |
Also Published As
Publication number | Publication date |
---|---|
DE10065965B4 (en) | 2007-11-29 |
DE10065965A1 (en) | 2002-02-21 |
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