DD82790A - - Google Patents
Info
- Publication number
- DD82790A DD82790A DD82790DA DD82790A DD 82790 A DD82790 A DD 82790A DD 82790D A DD82790D A DD 82790DA DD 82790 A DD82790 A DD 82790A
- Authority
- DD
- German Democratic Republic
Links
Publications (1)
Publication Number | Publication Date |
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DD82790A true DD82790A (en) |
Family
ID=268697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DD82790D DD82790A (en) |
Country Status (1)
Country | Link |
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DD (1) | DD82790A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3140348A1 (en) * | 1980-10-15 | 1982-08-26 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | METHOD FOR THE SIMULTANEOUS PRODUCTION OF MULTIPLE ELECTRICAL CONNECTIONS, IN PARTICULAR FOR THE ELECTRICAL CONNECTION OF A SEMICONDUCTOR COMPONENT |
DE4105592A1 (en) * | 1991-02-22 | 1992-08-27 | Messerschmitt Boelkow Blohm | METHOD FOR THE AREA CONNECTING OF SILICON SEMICONDUCTOR DISC |
DE4230030A1 (en) * | 1991-09-11 | 1993-03-18 | Gold Star Electronics | Chip housing with thin inner leads - has reduced vol. of housing body esp. composed of cast epoxide] material |
DE4235908A1 (en) * | 1992-10-23 | 1994-04-28 | Telefunken Microelectron | Method for soldering a semiconductor body to a carrier element |
DE4241439A1 (en) * | 1992-12-10 | 1994-06-16 | Daimler Benz Ag | Keyed bonding between connectors and contacts on a semiconductor surface - uses an intermediate layer with structured melting point to fuse connector to solar cell contact under heat and pressure |
DE4303790A1 (en) * | 1993-02-10 | 1994-08-11 | Daimler Benz Ag | Method for producing a positively engaging connection between semiconductor components and metallic surface of carrier elements |
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0
- DD DD82790D patent/DD82790A/xx unknown
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3140348A1 (en) * | 1980-10-15 | 1982-08-26 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | METHOD FOR THE SIMULTANEOUS PRODUCTION OF MULTIPLE ELECTRICAL CONNECTIONS, IN PARTICULAR FOR THE ELECTRICAL CONNECTION OF A SEMICONDUCTOR COMPONENT |
DE4105592A1 (en) * | 1991-02-22 | 1992-08-27 | Messerschmitt Boelkow Blohm | METHOD FOR THE AREA CONNECTING OF SILICON SEMICONDUCTOR DISC |
DE4230030A1 (en) * | 1991-09-11 | 1993-03-18 | Gold Star Electronics | Chip housing with thin inner leads - has reduced vol. of housing body esp. composed of cast epoxide] material |
DE4235908A1 (en) * | 1992-10-23 | 1994-04-28 | Telefunken Microelectron | Method for soldering a semiconductor body to a carrier element |
DE4241439A1 (en) * | 1992-12-10 | 1994-06-16 | Daimler Benz Ag | Keyed bonding between connectors and contacts on a semiconductor surface - uses an intermediate layer with structured melting point to fuse connector to solar cell contact under heat and pressure |
DE4303790A1 (en) * | 1993-02-10 | 1994-08-11 | Daimler Benz Ag | Method for producing a positively engaging connection between semiconductor components and metallic surface of carrier elements |
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DD82790A (en) |