DD63253A3 - - Google Patents
Info
- Publication number
- DD63253A3 DD63253A3 DD12128266A DD12128266A DD63253A3 DD 63253 A3 DD63253 A3 DD 63253A3 DD 12128266 A DD12128266 A DD 12128266A DD 12128266 A DD12128266 A DD 12128266A DD 63253 A3 DD63253 A3 DD 63253A3
- Authority
- DD
- German Democratic Republic
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD12128266A DD63253A3 (https=) | 1966-12-05 | 1966-12-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD12128266A DD63253A3 (https=) | 1966-12-05 | 1966-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD63253A3 true DD63253A3 (https=) | 1968-08-05 |
Family
ID=5479137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD12128266A DD63253A3 (https=) | 1966-12-05 | 1966-12-05 |
Country Status (1)
| Country | Link |
|---|---|
| DD (1) | DD63253A3 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2024916A1 (https=) * | 1968-11-22 | 1970-09-04 | Western Electric Co | |
| EP0009558A1 (de) * | 1978-08-21 | 1980-04-16 | International Business Machines Corporation | Verfahren und Vorrichtung zur Modifizierung einer Oberfläche mittels Plasma |
| DE19741725A1 (de) * | 1997-09-22 | 1999-03-25 | Rossendorf Forschzent | Verfahren zur Erzeugung einer dotierten Schicht in Siliziumkarbid |
-
1966
- 1966-12-05 DD DD12128266A patent/DD63253A3/xx unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2024916A1 (https=) * | 1968-11-22 | 1970-09-04 | Western Electric Co | |
| EP0009558A1 (de) * | 1978-08-21 | 1980-04-16 | International Business Machines Corporation | Verfahren und Vorrichtung zur Modifizierung einer Oberfläche mittels Plasma |
| DE19741725A1 (de) * | 1997-09-22 | 1999-03-25 | Rossendorf Forschzent | Verfahren zur Erzeugung einer dotierten Schicht in Siliziumkarbid |
| DE19741725C2 (de) * | 1997-09-22 | 2003-11-20 | Rossendorf Forschzent | Verfahren zur Erzeugung einer p-dotierten Schicht in Siliziumkarbid |