DD63253A3 - - Google Patents

Info

Publication number
DD63253A3
DD63253A3 DD12128266A DD12128266A DD63253A3 DD 63253 A3 DD63253 A3 DD 63253A3 DD 12128266 A DD12128266 A DD 12128266A DD 12128266 A DD12128266 A DD 12128266A DD 63253 A3 DD63253 A3 DD 63253A3
Authority
DD
German Democratic Republic
Application number
DD12128266A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DD12128266A priority Critical patent/DD63253A3/xx
Publication of DD63253A3 publication Critical patent/DD63253A3/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
DD12128266A 1966-12-05 1966-12-05 DD63253A3 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DD12128266A DD63253A3 (enExample) 1966-12-05 1966-12-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD12128266A DD63253A3 (enExample) 1966-12-05 1966-12-05

Publications (1)

Publication Number Publication Date
DD63253A3 true DD63253A3 (enExample) 1968-08-05

Family

ID=5479137

Family Applications (1)

Application Number Title Priority Date Filing Date
DD12128266A DD63253A3 (enExample) 1966-12-05 1966-12-05

Country Status (1)

Country Link
DD (1) DD63253A3 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024916A1 (enExample) * 1968-11-22 1970-09-04 Western Electric Co
EP0009558A1 (de) * 1978-08-21 1980-04-16 International Business Machines Corporation Verfahren und Vorrichtung zur Modifizierung einer Oberfläche mittels Plasma
DE19741725A1 (de) * 1997-09-22 1999-03-25 Rossendorf Forschzent Verfahren zur Erzeugung einer dotierten Schicht in Siliziumkarbid

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024916A1 (enExample) * 1968-11-22 1970-09-04 Western Electric Co
EP0009558A1 (de) * 1978-08-21 1980-04-16 International Business Machines Corporation Verfahren und Vorrichtung zur Modifizierung einer Oberfläche mittels Plasma
DE19741725A1 (de) * 1997-09-22 1999-03-25 Rossendorf Forschzent Verfahren zur Erzeugung einer dotierten Schicht in Siliziumkarbid
DE19741725C2 (de) * 1997-09-22 2003-11-20 Rossendorf Forschzent Verfahren zur Erzeugung einer p-dotierten Schicht in Siliziumkarbid

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