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US4874484A
(en)
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Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon
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US3536600A
(en)
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Method of manufacturing semiconductor devices using an electrolytic etching process and semiconductor device manufactured by this method
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US2695930A
(en)
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High-frequency transistor circuit
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US5472735A
(en)
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Method for forming electrical connection to the inner layers of a multilayer circuit board
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US3749653A
(en)
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Process of electrolytic etching
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US3196094A
(en)
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Method of automatically etching an esaki diode
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EP0018556B1
(en)
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Apparatus and process for selective electrochemical etching
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US3268781A
(en)
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P-nu junction transistor with increased resistance in current path across base surface
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US3287239A
(en)
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Method for making a semiconductor device
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US3000797A
(en)
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Method of selectively plating pn junction devices
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DE1252322B
(en)
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Method for producing a diode and arrangement for its implementation
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FR1177006A
(en)
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Process for controlling the profiling of conductive or semiconductor bodies and electroplating deposits on these bodies
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DD57390A
(en)
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