DD277455A1 - DIFFUSION MASK FOR ION EXCHANGE IN GLASS - Google Patents
DIFFUSION MASK FOR ION EXCHANGE IN GLASS Download PDFInfo
- Publication number
- DD277455A1 DD277455A1 DD32239288A DD32239288A DD277455A1 DD 277455 A1 DD277455 A1 DD 277455A1 DD 32239288 A DD32239288 A DD 32239288A DD 32239288 A DD32239288 A DD 32239288A DD 277455 A1 DD277455 A1 DD 277455A1
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- glass
- chromium
- ion exchange
- etching
- diffusion
- Prior art date
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- Optical Integrated Circuits (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Die Erfindung betrifft eine Diffusionsmaske fuer den Ionenaustausch in Glas. Derartige Masken werden zur Herstellung planarer Wellenleiterstrukturen benoetigt. Die Erfindung betrifft eine Ausfuehrung, die zur Anwendung in wenig saeureresistentem Glas vorgesehen ist. Sie besteht aus einer auf ein auf 200 bis 250 vorgeheiztes Glassubstrat aufgebrachten Schicht, die aus etwa gleichen Anteilen von Chrom und Nickel besteht und eine Dicke von 100 bis 300 nm aufweist.The invention relates to a diffusion mask for ion exchange in glass. Such masks are needed to fabricate planar waveguide structures. The invention relates to an embodiment which is intended for use in less acid resistant glass. It consists of a layer applied to a glass substrate preheated to 200 to 250, which consists of approximately equal proportions of chromium and nickel and has a thickness of 100 to 300 nm.
Description
Anschließend gelangt das Glassubstrat durch Drehung des Probentellers über das Sputtertarget. Als Targetmaterial wird eine Ni-Cr-Legierujig mit einem Chromanteil von etwa 60% verwendet. Durch Sputtern wird jetzt auf die Glasoberfläche eine Ni-Cr-Schicht von etwa 250 nm Dicke aufgebracht.Subsequently, the glass substrate passes through the sputtering target by rotation of the sample tray. As the target material, a Ni-Cr alloy having a chromium content of about 60% is used. By sputtering is now applied to the glass surface, a Ni-Cr layer of about 250 nm thickness.
2. Fotolithografische Strukturierung2. Photolithographic structuring
Auf die Ni-Cr-Schicht wird Positivresist aufgescUeudert. Diese Fotolackschicht wird durch eine Fotomaske hindurch belichtet und anschließend entwicke't.Positive resist is recorded on the Ni-Cr layer. This photoresist layer is exposed through a photomask and then Entwicke't.
3. Naßchemisches Ätzen3. wet chemical etching
Das Glassubstrat mit Metallschicht und aufgebrachter Lackstruktur wird etwa 150s einem Ätzbad folgender Zusammensetzung ausgesetzt:The glass substrate with metal layer and applied lacquer structure is exposed for about 150 seconds to an etching bath of the following composition:
165mg Ammoniumcer-IV-nitrat 43ml Perchlorsäure (70%ig)165mg Ammoniumcer-IV-nitrate 43ml perchloric acid (70%)
(Werte beziehen sich auf 11 Prozeßlösung).(Values refer to 11 process solution).
Bei diesem Ätzprozeß werden die nicht mit Fotolack bedeckten Teile der Metallschicht bis auf die Glasoberfläche abgeätzt. Ein Angriff der Glasoberfläche erfolgt nur noch mit einer Ätzrate von 0,3 μηη/min gegenüber (3 bis 4)Mm/min bei der Verwendung von Aluminium- und Titanmasken. Dieser schwache Glasangriff hat keine Auswirkungen mehr auf die Eigenschaften der hergestellten WellenleiterIn this etching process, the non-photoresist-covered parts of the metal layer are etched to the glass surface. An attack of the glass surface takes place only with an etch rate of 0.3 μηη / min against (3 to 4) Mm / min when using aluminum and titanium masks. This weak glass attack no longer affects the properties of the manufactured waveguides
Abschließend erfolgt mittels Aceton und Äthanol die Ablösung des auf der Metallschicht verbliebenen Fotolackes. Finally, by means of acetone and ethanol, the detachment of the remaining on the metal layer photoresist.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD32239288A DD277455A1 (en) | 1988-11-30 | 1988-11-30 | DIFFUSION MASK FOR ION EXCHANGE IN GLASS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD32239288A DD277455A1 (en) | 1988-11-30 | 1988-11-30 | DIFFUSION MASK FOR ION EXCHANGE IN GLASS |
Publications (1)
Publication Number | Publication Date |
---|---|
DD277455A1 true DD277455A1 (en) | 1990-04-04 |
Family
ID=5604411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DD32239288A DD277455A1 (en) | 1988-11-30 | 1988-11-30 | DIFFUSION MASK FOR ION EXCHANGE IN GLASS |
Country Status (1)
Country | Link |
---|---|
DD (1) | DD277455A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4018399A1 (en) * | 1990-06-08 | 1991-12-19 | Leybold Ag | METHOD FOR COATING A SUBSTRATE, ESPECIALLY A GLASS DISC, IN ORDER TO ACHIEVE OPACITY, AND METHOD COATED SUBSTRATE |
-
1988
- 1988-11-30 DD DD32239288A patent/DD277455A1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4018399A1 (en) * | 1990-06-08 | 1991-12-19 | Leybold Ag | METHOD FOR COATING A SUBSTRATE, ESPECIALLY A GLASS DISC, IN ORDER TO ACHIEVE OPACITY, AND METHOD COATED SUBSTRATE |
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ENJ | Ceased due to non-payment of renewal fee |