DD159584A1 - INTERMITTENTLY LUMINO SCENE OR LASER DIODE ARRANGEMENT - Google Patents

Abstract

The invention relates to an intermittently radiating luminescence and / or laser diode arrangement for signal, printing and display purposes, with which a simplified control is to be made possible. According to the invention, an integrated oscillatable circuit, for example a multivibrator, has points which lead to a large pulsating current for driving a luminescence or laser diode. At these points, the light emitters are mounted hybrid integrated and connected to the corresponding electrodes. It is expedient to construct the oscillatable electronic circuit in a semiconductor which is also suitable for luminescence of the laser radiation, for example GaAs or GaP, and to set up pn-transitions for amplification and others for light emission by means of appropriate doping or epitaxy, or a combination of them.

Description

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Title of the invention

Intermittently radiating luminescence or laser diode nanordnung

Field of application of the invention

The invention relates to luminescence and laser diodes or associated with these arrangements for intermittent light radiation for signal, pressure and display purposes.

Characteristic of the known technical solutions

JLO Circuits employing both the drive circuit and the LED chips hybrid on a carrier strip material are known (HDSP-2400 Hewlett-Packard, contactes HP France: BP 70. 91401 Orsay Cedex). They are intended for external control and can not emit intermittent radiation themselves. A combination of lasing and driving elements is described in the papers C.P. Lee, S Morgalti, ι Ury, A.Ysiv, integration of on injection laser with a Gaussian oscillator on a semi-Tusulatiny GaAs substrate, Appl. Phys. Lett., 32 (12) 15 Ouni 1978. They relate to full integration in materials with GaAd and have the highest-frequency modulation of laser diodes to the content.

intermittent radiating arrangements are not considered.

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Blink diodes are also known with low pulse rate, maximum 4.5 Hz (Litronix, Plashing Red-Lit 4403, Omni Ray GmbH Prospectus), the disadvantage here is that the frequency is not adjustable · In addition, the power loss of the circuit used is relatively high.

Also proposed are luminous circuit structures in which differently doped regions serve both for driving and for the emission of light (WP G06K / 218 224). MOS structures are included as capacitances in the circuit concept. These are mainly hybrid structures. From the US PS. 4039890 discloses an LED array on an LSI matrix circuit. The circuit consists of flip-flops, at the parallel outputs via bipolar Treiberertransisjtorstufen the light-emitting diodes are driven.

Object of the invention

The aim of the invention is an intermittently radiating luminescence or laser diode arrangement irdj-t simple control, which is suitable to reduce the εchaltungsstechnischen expenditure in information processing considerably.

Explanation of the essence of the invention

The invention has for its object to find light-emitting diodes or laser diodes and they controlling arrangements that allow the intermittent light output in an integrated form.

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According to the invention, the object is achieved in that an integrated oscillatory electronic circuit, such as a multivibrator, has points that lead a large for driving a light emitting diode or laser diode pulsating current. Luminescence diodes or laser diodes are placed on hybrid integrated integrated into these locations and connected to the corresponding electrodes.

These sites may be designed as polysilicon or aluminum coated islands »

However, it is also possible for an oxide layer to be formed over a conductive electrode or layer as a location for the luminescence diode or laser diode hook to be used in hybrid fashion as a capacitor. Then, the series connection: conductive electrode or layer-oxide layer substrate of Lumineszenzdioden- or · laser diode chip acts as a capacitor, as it is needed in a vibratory electronic circuit.

In a development of the invention, it is proposed to construct the eye-lifting electronic circuit in a semiconductor which is also suitable for luminescence or laser radiation, for example GaAs or GaP. By appropriate. Doping or epitaxy, pn junctions are set up for amplification and others for luminescence or laser radiation, or any combination of them. The locations provided for luminescence or laser radiation can also be arranged and provided for the thermal printing.

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For certain purposes, it is advantageous to locally summarize all the luminescent pn junctions, for each of which is just current flow. When switching from one such light emitting diode group to the other, a different luminous color is provided by a suitable doping or by different levels of current flow possible.

embodiment

The invention will be explained with reference to an execution * ® for closer. The accompanying drawing shows in

FIG. 1 shows the circuit according to the invention, FIG. 2, a hybrid integrated luminescence diode chip

FIG. 1 shows an integrated Hultivibratorschaltung containing at three points LED chips, since there sufficiently large pulsating currents flow.

A luminescence diode chip 1 (FIG. 2) consisting of the substrate 2 made of GaAs and the p-type region 3 _f is fixed on an oxide layer 4 over a light layer 5 of aluminum.

The conductive layer 5 provides the connection between the chip 1 and the integrated circuit 6, so that a capacitor is realized, which is needed in the oscillatory electronic circuit.

Claims (4)

2264 74 Claim for invention 1 · Intermittently radiating luminescence or laser diode arrangement, characterized in that an integrated oscillatory electronic circuit has points that carry a large current for driving a light-emitting diode or laser diode pulsating current, and arranged on these sites luminescence or laser diodes hybrid integrated and with the corresponding Electrodes are connected, 2, intermittently radiating arrangement according to point 1, characterized in that the light-emitting diodes or laser diodes are arranged on an integrated capacitance in silicon at polysilicon and / or aluminum unterlegter place · 3.Intermittingly radiating arrangement according to item 1, characterized in that the luminescence or laser diodes are arranged on a location isolated by an oxide with underlying conductive electrode or layer. 4.Intermittingly radiating arrangement according to item 1 to 31, characterized in that the integrated oscillatory electronic circuit is constructed in a semiconductor which is also suitable for luminescence or laser circuitry, by adding some pn-transitions for amplification and others for light emission and / or by suitable doping or epitaxy. or thermal printing are set up or for any combinations of them. - i - 2 2 64 5 _β lntermittieren radiating arrangement "according to item 1 to A, characterized in that the luminescent and / or lasing pn junctions are locally combined and / or have different luminescent colors. For this, JOeiien drawings