DD152120A1 - PROCESS FOR THE PRODUCTION OF SILICON OXIDE AS UPPER MATERIAL - Google Patents

Abstract

The object of the invention is the production of SiO at a low cost and energy saving. The task is not to perform an additional vacuum process, but to carry out the processing in air. This is achieved according to the invention in that Si and SiO 2 are of high purity in equimolar amounts or are carried out, but the processing is carried out in air. Geloest this erfindungsg. in that Si and SiO &sub2; large purity in aequimolaren amounts or mixed with Si-excess dry and mechanically activated. With the addition of an organic binder in aqueous solution, the mixture is deformed and formed by an exothermic chemical reaction in air, solidified and predried. After the subsequent hardening at elevated temperature, the material is comminuted.

Description

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Process for the preparation of silicon oxide as a vapor deposition material

Field of the Invention '"

The invention relates to a process for the production of a vapor deposition material for the production of silicon oxide layers in vacuum evaporation processes. Layers of silicon oxide are used, for example, for electronic components or in thermal radiation-reflecting thermal disks. 'j ...

Characteristic of the known technical solutions

Silicon vapor vapor layers usually become! produced by evaporation of particulate silicon monoxide (SiO) in vacuo. This particulate silicon monoxide is produced by a separate vacuum process in which a mixture of silicon (Si) and silicon dioxide (SiO 2) is vaporized, deposited on a condensing surface, and then the condensate is shredded into pieces. j

Further, an attempt was made to sinter silicon monoxide by sintering a mixture of lumpy silicon and silicon dioxide! also in an open, separate vacuum process, with the sintered material subsequently broken

or is ground · j

The known processes have the disadvantage that the required vaporizing material is produced in an external, energy-consuming vacuum process.

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longitudinal processes led to relatively high costs for the

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  A process is to be created with which silicon oxide is produced in an energy-saving and cost-effective manner as a vapor deposition material, the material not causing any deterioration of the properties of the layers produced therewith.

Loan of the essence of the invention ;

It is an object of the invention to provide a process for producing silica for use as a vapor deposition material in the production of SiO 2 layers. which is relatively simple and does not require a separate vacuum process, but; an \ air · is feasible.

According to the invention, the object is achieved by using silicon (Si) and silicon dioxide (SiO 2) in that; on . Mixture of silicon and silicon dioxide of very fine grain size in equimolar amounts or with an excess of silicon is mechanically activated. Subsequently, at room temperature. , temperature. added inorganic binder and preforming the resulting mass. The binder is chosen so; that it does not interfere with the 'later vacuum process and' in the Aufdampf layer. In air drying, due to the preceding mechanical activation with evolution of heat, a chemical 'forming reaction takes place in which the material is solidified and due to the particular structure obtains favorable evaporative properties. Subsequently, the still low residual moisture is expelled at about 120 ⁰ G. The dry material is crushed to the desired consistency. It is advantageous if the particles of Si and SiO _{2 are} smaller than 1100 ma and the Si excess in the Si-SiO ₂ mixture does not exceed 30%. ; .-.

Furthermore, it is expedient, as a binder water glass! with a weight fraction of less than 1.5 %, based on the Si-SiCU mixture, and that the weight ratio of water glass to water is 1: 8 to 1:10. »

embodiment

520 g of silicon powder (disc scrap) and 1000 g of silica (quartz flour Y / 12) of particle sizes up to 100 / ^ n. ι. , '·. j

dry mixed and ground for activation in a ball mill for 1.5 h iritensiv. Subsequently, the mixture is mixed with 45 ml

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Iiatronwasserglas (30 %) moistened in 300 ml of water and placed in a mold 16 mm high and firmly rolled. After about 10 h, a formation of the material is completed and the

Material air-dry. Subsequently, the material is subsequently dried at 120 ° C. for 2 hours in a drying cupboard.

Bas dried material is crushed in any way, as it is required for use in the vacuum coating plant zurl production of SiO 2 layers.

Claims (4)

2 2 2 5 5 3 IJ Process for the preparation of silicon oxide as a vapor deposition material using silicon and silicon dioxide ^; Characterized in that ₃ silicon and silicon dioxide of high purity with small particle sizes in äquimojlaren. ile.ngen or dry with Silicium.im excess   and mechanically activated, the activated mixture with I moistened and deformed a small addition of an inorganic binder in aqueous solution, the! Deformed, moist mixture by an exothermic chemical reaction, in a formation in air under Uorma! Conditions solidified and pre-dried, the formed material then at elevated temperature completely is dried and cured and that the material is then comminuted bisj the required bulk. j 2. The method according to item 1, characterized in that the size of the particles of silicon and silicon dioxide is chosen to be less than 100 / ami »' 3. The method according to item 1, characterized in that d <bm Ge ^ ° ³ y mixed silicon and silicon dioxide only so much silicon 'is addedj that the excess of silicon does not exceed 30 % . 4. The method according Pkto 1 to 3, characterized in that '. , when. inorganic binder water glass with a total ¹ weight ratio of water glass to water of 1: 8 to 1: 10, with a Gewichtariteil water glass, based on there; sodium-silica mixture, below 1.5 %. is used.