DD138679A5 - ARRANGEMENT WITH ATOMIC OR MOLECULAR RADIATION SOURCE - Google Patents

ARRANGEMENT WITH ATOMIC OR MOLECULAR RADIATION SOURCE

Info

Publication number
DD138679A5
DD138679A5 DD20763178A DD20763178A DD138679A5 DD 138679 A5 DD138679 A5 DD 138679A5 DD 20763178 A DD20763178 A DD 20763178A DD 20763178 A DD20763178 A DD 20763178A DD 138679 A5 DD138679 A5 DD 138679A5
Authority
DD
German Democratic Republic
Prior art keywords
atomic
arrangement
radiation source
molecular radiation
molecular
Prior art date
Application number
DD20763178A
Other languages
German (de)
Inventor
Erich Jakopic
Original Assignee
Zentrum Fuer Elektronenmikrosk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zentrum Fuer Elektronenmikrosk filed Critical Zentrum Fuer Elektronenmikrosk
Publication of DD138679A5 publication Critical patent/DD138679A5/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DD20763178A 1977-09-05 1978-09-04 ARRANGEMENT WITH ATOMIC OR MOLECULAR RADIATION SOURCE DD138679A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0635277A AT365857B (en) 1977-09-05 1977-09-05 ARRANGEMENT WITH AN ATOMIC OR MOLECULAR RADIATION SOURCE AFTER THE PRINCIPLE OF SPRAYING SOLID MATERIALS

Publications (1)

Publication Number Publication Date
DD138679A5 true DD138679A5 (en) 1979-11-14

Family

ID=3585458

Family Applications (1)

Application Number Title Priority Date Filing Date
DD20763178A DD138679A5 (en) 1977-09-05 1978-09-04 ARRANGEMENT WITH ATOMIC OR MOLECULAR RADIATION SOURCE

Country Status (5)

Country Link
JP (1) JPS5493355A (en)
AT (1) AT365857B (en)
CH (1) CH637996A5 (en)
DD (1) DD138679A5 (en)
DE (1) DE2838676A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0205028A1 (en) * 1985-06-12 1986-12-17 Leybold Aktiengesellschaft Apparatus for depositing thin layers on a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63241164A (en) * 1987-03-30 1988-10-06 Toshiba Corp Target for sputtering

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0205028A1 (en) * 1985-06-12 1986-12-17 Leybold Aktiengesellschaft Apparatus for depositing thin layers on a substrate
DE3521053A1 (en) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln DEVICE FOR APPLYING THIN LAYERS TO A SUBSTRATE

Also Published As

Publication number Publication date
DE2838676C2 (en) 1990-08-30
ATA635277A (en) 1981-06-15
AT365857B (en) 1982-02-25
CH637996A5 (en) 1983-08-31
DE2838676A1 (en) 1979-03-29
JPS5493355A (en) 1979-07-24

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