DD110582A1 - - Google Patents
Info
- Publication number
- DD110582A1 DD110582A1 DD178100A DD17810074A DD110582A1 DD 110582 A1 DD110582 A1 DD 110582A1 DD 178100 A DD178100 A DD 178100A DD 17810074 A DD17810074 A DD 17810074A DD 110582 A1 DD110582 A1 DD 110582A1
- Authority
- DD
- German Democratic Republic
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3446—Transition metal elements; Rare earth elements
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1922832A SU511794A1 (ru) | 1973-05-28 | 1973-05-28 | Способ получени полупроводниковой светоизлучающей структуры |
| SU7301924913A SU470244A1 (ru) | 1973-05-31 | 1973-05-31 | Полупроводникова светоизлучающа структура |
| SU1930156 | 1973-06-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD110582A1 true DD110582A1 (cg-RX-API-DMAC7.html) | 1974-12-20 |
Family
ID=27356255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD178100A DD110582A1 (cg-RX-API-DMAC7.html) | 1973-05-28 | 1974-04-24 |
Country Status (8)
| Country | Link |
|---|---|
| CA (1) | CA1017436A (cg-RX-API-DMAC7.html) |
| CH (1) | CH571770A5 (cg-RX-API-DMAC7.html) |
| CS (1) | CS172632B1 (cg-RX-API-DMAC7.html) |
| DD (1) | DD110582A1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE2420741C2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2232169B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1474942A (cg-RX-API-DMAC7.html) |
| IT (1) | IT1043910B (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2070859B (en) | 1980-02-07 | 1984-03-21 | Stanley Electric Co Ltd | Hetero-junction light-emitting diode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1585732A (cg-RX-API-DMAC7.html) * | 1967-10-02 | 1970-01-30 | ||
| US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
-
1974
- 1974-04-24 DD DD178100A patent/DD110582A1/xx unknown
- 1974-04-25 CH CH568174A patent/CH571770A5/xx not_active IP Right Cessation
- 1974-04-29 FR FR7414864A patent/FR2232169B1/fr not_active Expired
- 1974-04-29 DE DE2420741A patent/DE2420741C2/de not_active Expired
- 1974-05-02 GB GB1936374A patent/GB1474942A/en not_active Expired
- 1974-05-09 CA CA199,585A patent/CA1017436A/en not_active Expired
- 1974-05-10 IT IT41393/74A patent/IT1043910B/it active
- 1974-05-17 CS CS3531A patent/CS172632B1/cs unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2232169B1 (cg-RX-API-DMAC7.html) | 1977-03-04 |
| IT1043910B (it) | 1980-02-29 |
| DE2420741C2 (de) | 1982-10-28 |
| CA1017436A (en) | 1977-09-13 |
| FR2232169A1 (cg-RX-API-DMAC7.html) | 1974-12-27 |
| CS172632B1 (cg-RX-API-DMAC7.html) | 1977-01-28 |
| CH571770A5 (cg-RX-API-DMAC7.html) | 1976-01-15 |
| DE2420741A1 (de) | 1975-01-02 |
| GB1474942A (en) | 1977-05-25 |