CS692989A2 - Alkaline bath for semiconductor materials etching - Google Patents

Alkaline bath for semiconductor materials etching

Info

Publication number
CS692989A2
CS692989A2 CS896929A CS692989A CS692989A2 CS 692989 A2 CS692989 A2 CS 692989A2 CS 896929 A CS896929 A CS 896929A CS 692989 A CS692989 A CS 692989A CS 692989 A2 CS692989 A2 CS 692989A2
Authority
CS
Czechoslovakia
Prior art keywords
semiconductor materials
alkaline bath
materials etching
etching
bath
Prior art date
Application number
CS896929A
Other languages
English (en)
Inventor
Milan Ing Salamon
Eva Rndr Paskova
Original Assignee
Tesla Roznov A S
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tesla Roznov A S filed Critical Tesla Roznov A S
Priority to CS896929A priority Critical patent/CS692989A2/cs
Publication of CS692989A2 publication Critical patent/CS692989A2/cs

Links

CS896929A 1989-12-07 1989-12-07 Alkaline bath for semiconductor materials etching CS692989A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CS896929A CS692989A2 (en) 1989-12-07 1989-12-07 Alkaline bath for semiconductor materials etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS896929A CS692989A2 (en) 1989-12-07 1989-12-07 Alkaline bath for semiconductor materials etching

Publications (1)

Publication Number Publication Date
CS692989A2 true CS692989A2 (en) 1991-12-17

Family

ID=5417458

Family Applications (1)

Application Number Title Priority Date Filing Date
CS896929A CS692989A2 (en) 1989-12-07 1989-12-07 Alkaline bath for semiconductor materials etching

Country Status (1)

Country Link
CS (1) CS692989A2 (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040633A1 (en) * 2002-10-25 2004-05-13 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040633A1 (en) * 2002-10-25 2004-05-13 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics

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