CS167032B1 - - Google Patents

Info

Publication number
CS167032B1
CS167032B1 CS6379A CS637973A CS167032B1 CS 167032 B1 CS167032 B1 CS 167032B1 CS 6379 A CS6379 A CS 6379A CS 637973 A CS637973 A CS 637973A CS 167032 B1 CS167032 B1 CS 167032B1
Authority
CS
Czechoslovakia
Application number
CS6379A
Other languages
Czech (cs)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CS167032B1 publication Critical patent/CS167032B1/cs

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/34Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/931Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
CS6379A 1972-09-15 1973-09-14 CS167032B1 (et)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1828718A SU438364A1 (ru) 1972-09-15 1972-09-15 Диодный источник света на карбтде кремни

Publications (1)

Publication Number Publication Date
CS167032B1 true CS167032B1 (et) 1976-04-29

Family

ID=20527079

Family Applications (1)

Application Number Title Priority Date Filing Date
CS6379A CS167032B1 (et) 1972-09-15 1973-09-14

Country Status (8)

Country Link
US (1) US3972749A (et)
CA (1) CA1009739A (et)
CS (1) CS167032B1 (et)
DD (1) DD106525A1 (et)
DE (1) DE2345198B2 (et)
FR (1) FR2200723B1 (et)
GB (1) GB1422675A (et)
SU (1) SU438364A1 (et)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法
US5313078A (en) * 1991-12-04 1994-05-17 Sharp Kabushiki Kaisha Multi-layer silicon carbide light emitting diode having a PN junction
US6403975B1 (en) 1996-04-09 2002-06-11 Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
SE9602993D0 (sv) * 1996-08-16 1996-08-16 Abb Research Ltd A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030704A (en) * 1957-08-16 1962-04-24 Gen Electric Method of making non-rectifying contacts to silicon carbide
US2937323A (en) * 1958-05-29 1960-05-17 Westinghouse Electric Corp Fused junctions in silicon carbide
NL107889C (et) * 1958-08-26
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
US3517281A (en) * 1967-01-25 1970-06-23 Tyco Laboratories Inc Light emitting silicon carbide semiconductor junction devices
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
DE1802350C3 (de) * 1968-10-10 1974-01-24 Tatjana G. Kmita Elektrolumineszente Halbleiterdiode
US3565703A (en) * 1969-07-09 1971-02-23 Norton Research Corp Silicon carbide junction diode

Also Published As

Publication number Publication date
DE2345198B2 (de) 1979-10-18
GB1422675A (en) 1976-01-28
DE2345198A1 (de) 1974-04-25
SU438364A1 (ru) 1976-07-05
DD106525A1 (et) 1974-06-12
CA1009739A (en) 1977-05-03
FR2200723B1 (et) 1978-02-10
US3972749A (en) 1976-08-03
FR2200723A1 (et) 1974-04-19

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