CS162042B1 - - Google Patents

Info

Publication number
CS162042B1
CS162042B1 CS215070A CS215070A CS162042B1 CS 162042 B1 CS162042 B1 CS 162042B1 CS 215070 A CS215070 A CS 215070A CS 215070 A CS215070 A CS 215070A CS 162042 B1 CS162042 B1 CS 162042B1
Authority
CS
Czechoslovakia
Application number
CS215070A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CS162042B1 publication Critical patent/CS162042B1/cs

Links

Classifications

    • H10W72/30
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • H10D88/01Manufacture or treatment
    • H10W10/019
    • H10W10/10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • H10P72/743
    • H10P72/7432
    • H10W72/073
    • H10W72/07337
CS215070A 1969-04-03 1970-04-01 CS162042B1 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD13900569 1969-04-03

Publications (1)

Publication Number Publication Date
CS162042B1 true CS162042B1 (cs) 1975-07-15

Family

ID=5481084

Family Applications (1)

Application Number Title Priority Date Filing Date
CS215070A CS162042B1 (cs) 1969-04-03 1970-04-01

Country Status (3)

Country Link
CS (1) CS162042B1 (cs)
DE (1) DE2012853A1 (cs)
FR (1) FR2038226B1 (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2784800B1 (fr) * 1998-10-20 2000-12-01 Commissariat Energie Atomique Procede de realisation de composants passifs et actifs sur un meme substrat isolant

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436548A (en) * 1964-06-29 1969-04-01 Texas Instruments Inc Combination p-n junction light emitter and photocell having electrostatic shielding
FR1450952A (fr) * 1964-12-19 1966-06-24 Telefunken Patent Dispositif semi-conducteur et notamment, transistor
FR1540051A (fr) * 1966-09-21 1968-09-20 Rca Corp Microcircuit et son procédé de fabrication

Also Published As

Publication number Publication date
FR2038226B1 (cs) 1973-07-13
DE2012853A1 (de) 1971-05-06
FR2038226A1 (cs) 1971-01-08

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