CS162042B1 - - Google Patents
Info
- Publication number
- CS162042B1 CS162042B1 CS215070A CS215070A CS162042B1 CS 162042 B1 CS162042 B1 CS 162042B1 CS 215070 A CS215070 A CS 215070A CS 215070 A CS215070 A CS 215070A CS 162042 B1 CS162042 B1 CS 162042B1
- Authority
- CS
- Czechoslovakia
Links
Classifications
-
- H10W72/30—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
- H10D88/01—Manufacture or treatment
-
- H10W10/019—
-
- H10W10/10—
-
- H10P72/743—
-
- H10P72/7432—
-
- H10W72/073—
-
- H10W72/07337—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD13900569 | 1969-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS162042B1 true CS162042B1 (cs) | 1975-07-15 |
Family
ID=5481084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS215070A CS162042B1 (cs) | 1969-04-03 | 1970-04-01 |
Country Status (3)
| Country | Link |
|---|---|
| CS (1) | CS162042B1 (cs) |
| DE (1) | DE2012853A1 (cs) |
| FR (1) | FR2038226B1 (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2784800B1 (fr) * | 1998-10-20 | 2000-12-01 | Commissariat Energie Atomique | Procede de realisation de composants passifs et actifs sur un meme substrat isolant |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436548A (en) * | 1964-06-29 | 1969-04-01 | Texas Instruments Inc | Combination p-n junction light emitter and photocell having electrostatic shielding |
| FR1450952A (fr) * | 1964-12-19 | 1966-06-24 | Telefunken Patent | Dispositif semi-conducteur et notamment, transistor |
| FR1540051A (fr) * | 1966-09-21 | 1968-09-20 | Rca Corp | Microcircuit et son procédé de fabrication |
-
1970
- 1970-03-18 DE DE19702012853 patent/DE2012853A1/de active Pending
- 1970-04-01 CS CS215070A patent/CS162042B1/cs unknown
- 1970-04-02 FR FR7012026A patent/FR2038226B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2038226A1 (cs) | 1971-01-08 |
| FR2038226B1 (cs) | 1973-07-13 |
| DE2012853A1 (de) | 1971-05-06 |