CN86106269A - The apparatus and method of improving the resistive divider network resistive ratio stability are provided - Google Patents
The apparatus and method of improving the resistive divider network resistive ratio stability are provided Download PDFInfo
- Publication number
- CN86106269A CN86106269A CN86106269.8A CN86106269A CN86106269A CN 86106269 A CN86106269 A CN 86106269A CN 86106269 A CN86106269 A CN 86106269A CN 86106269 A CN86106269 A CN 86106269A
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- China
- Prior art keywords
- resistive element
- resistance
- sub
- resistive
- resistor network
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
Abstract
Disclose a kind of resistive divider network, it has a two or more on-chip film or thick film resistance elements of being deposited on.Each resistive element is divided into many resistance elements, and they are arranged alternately, with temperature coefficient (temperature coefficient of resistance tracking) and the thermal coupling that improves resistance value ratio.This has just improved the resistance value ratio constancy in the wide input voltage range widely.The sum of resistance element is an odd number, and the sub-element of each major component all has equal resistance value.
Description
The present invention relates to film and thick film resistor network in general.Specifically, relate to the stability of improving the resistive divider network resistance value ratio.
High-precision electronic is measured and the test requirements document resistive divider network has high resistive ratio stability.In other words, when network was subjected to such as the influencing of environment such as temperature and change in voltage and work, the ratio of resistance should keep stable as much as possible.
In the past, high precision instrument has to adopt wire-wound resistor that is very expensive, large volume in their divider network, satisfy the film resistance network of low precision instrument instructions for use, unless through selecting especially, generally do not possess desired resistive ratio stability, can make resistor network become very expensive and select especially.The magnitude of involved herein resistive ratio stability is: concerning variation of ambient temperature, be every degree centigrade of 1,000,000/0.5(0.5ppm/ ℃); It then is 1,000,000/2(2ppm) that 1000 volts input voltages are changed.
Resistive ratio stability is subjected to the influence of three principal elements:
1, poor (being so-called temperature coefficient of resistance tracking TCR Tracking) of the temperature coefficient of resistance (TCR) of all resistance of formation voltage divider;
2, poor (being so-called resistance voltage coefficient tracking VCR Tracking) of the resistance voltage coefficient (VCR) of all resistance;
3, the temperature difference of all resistance.
Because the influence of factor 1, TCR is defined as:
TCR＝ (R
2－R
1)/(R
1（t
2-t
1))
Wherein: R
2And R
1It is respectively temperature t
2And t
1Down, the resistance of single resistance.TCR can be on the occasion of, also can be negative value.
The difference of the TCR of all resistance of formation network, i.e. TCR tracking, the most remarkable to the influence of resistive ratio stability.In two resistor networks, equate that when variation of ambient temperature, both resistance value ratios remain unchanged so if form the TCR of two resistance of network.If the TCR difference of two resistance, this is common situation, because the influence of TCR, resistance value ratio will change with the variation of ambient temperature.TCR can just can bear, and this means the increase along with temperature, and resistance value may increase, and also may reduce.The TCR difference of two resistance is big more, and the variation of resistance value ratio also will be big more, and in other words, the stability of resistance value ratio is also just poor more.
Because the influence of factor 2, VCR is defined as:
VCR＝ (R
2-R
1)/(R
1(E
2-E
1))
Wherein: R
2And R
1Be respectively that applied voltage is E
2And E
1The time, the resistance of single resistance.
The VCR that manufactures film resistance with deposition process bears all the time.Good for design, the film resistor of manufacturing meticulously, VCR are generally all very little.For example, side's value is 100 to 200 ohm a film resistor, and its typical VCR drops on every volt 0.001/1000000th to 0.01(0.001 and arrives 0.01ppm/Volt) in the scope.Therefore, be added to ohmically direct voltage when increasing by 1000 volts (for example being elevated to 1100 volts from 100 volts), the resistance of one 10 megaohm, its ohmic value will reduce 1/1000000th and arrive 10(10 to 100 ohm).
Under the situation of resistive divider network, the variation of voltage is directly proportional with resistance.So, greater than 10 to 1 voltage divider, have only the VCR of resistance high electrical resistance just to play a major role for voltage ratio.
Aspect the time, VCR is instantaneous to the influence of the absolute resistance of film resistance in essence, and TCR then depends on the thermal time constant of resistance to the influence of the absolute resistance of film resistance, generally just can reach 90% temperature rise within one minute.VCR and TCR are called resistor power coefficient or PCR to the comprehensive effect of resistance, it is the algebraical sum of two kinds of change in resistance: a kind of is variation (bearing all the time) by the caused resistive element resistance of the increase of VCR and applied voltage, another kind is the variation (may be on the occasion of, also may be negative value) of the caused same resistive element resistance of self-heating that produced by the increase of TCR and same applied voltage.Comprehensive effect (resistor power coefficient (PCR)) both can cause the increase of resistance value, also can cause reducing of resistance value, and under rare occasion, even it is constant to keep resistance.
Because the influence of factor 3, the relative temperature of two resistance depends on three parameters:
1, the power of each unit of resistance area dissipation;
2, the distance between two resistance;
3, the thermal conductivity of substrate.
At first consider first parameter, the power dissipation of unit are.The power that each resistance dissipated in the network is known, is proportional to the ohmage of each resistance.If the network area is infinitely great, the temperature rise of each net joint so, the temperature difference between each the net joint that causes thus will be equal to zero.If the network area is infinitely small, temperature rise will be very high, but because all resistance all occupy same space, also do not have the temperature difference between each net joint.Obviously, both of these case all is impossible occur, and only is the theoretical boundary condition.It is thick that actual network on average is approximately 1/2 inch * 1 inch * 0.025 inch, arranging independently resistive element on the substrate one by one.Total power dissipation is big more, and the difference of the independent power that resistance dissipated is big more, and the temperature difference between all resistance is also just big more.
Do not consider temporarily earlier second parameter, below consider the thermal conductivity of the 3rd parameter-substrate earlier.The current most of material-talcums that generally adopt, glass, aluminium oxide etc., their thermal conductivity falls far short with the copper ratio.Therefore, high power consumption is loose, and net saves and low-power dissipates always has difference between the mean temperature of netting joint.
Only remaining now parameter 2, the distance on the substrate between all resistance.Unfortunately, in traditional structure arranged side by side, tube resistor is not put how closely, and the mean temperature of high energy dissipation net joint and low-power dissipation net joint always has a difference; This has just got back to the not good problem of substrate thermal conductivity again.
Therefore, even the TCR of two resistance equate, when applied voltage raises, resistance value ratio still can change (unless that the TCR of each resistance is is zero, and this in fact is impossible).In addition, no matter what method of employing deposit resistance material on substrate, always in the generation of film, have some change at random.So the TCR of the metal film of Xing Chenging at last is from the end to end of substrate, along with to the difference of reference edge distance and present mild variation, though linear change not necessarily.Therefore, be actually TCR on all four resistance can not be arranged.
For a long time, feel to need a kind of film resistor divider network.In this network, the difference of the temperature coefficient of resistance of each resistance goes to zero in operating temperature range, and the temperature of each resistance also goes to zero in operating voltage range.
The invention has the advantages that provides a kind of resistive divider network, and wherein the difference of the TCR of each resistance goes to zero in operating temperature range, and the temperature difference of each resistance also goes to zero in operating voltage range.
In the present invention, each element of resitstance voltage divider makes a lot of sub-elements that dispose to the other end from substrate spaced apart, and these sub-elements can be connected into discrete resistive element mutually.The sub-element of the resistive element of dissipation smaller power is staggered between the sub-element of resistive element of dissipation higher-wattage.Each sub-element is carried out resistor trimming in advance, might obtain desired absolute value and resistance value ratio.
The present invention further can provide a kind of improved resistive divider network, and the improvement of its TCR tracking generally surpasses 1,000%.
Read in conjunction with the accompanying drawings after the following detailed description, to one skilled in the art, above-mentioned advantage of the present invention and attendant advantages just become more obvious.
Fig. 1 is the circuit diagram of a kind of typical pair of resistive divider network of expression;
Fig. 2 is the plane graph of the resistive divider network of prior art;
Fig. 3 is the plane graph of resistive divider network of the present invention.
Now consult Fig. 1, there is shown the line map of resistive divider network 10.Network 10 has an input 12 that can be connected on first resistive element 14.First resistive element 14 can be connected to output 16 and second resistive element 18, and the latter can be connected to earth terminal 20 again.
Those skilled in the art is clear, mark all terminals and only be for convenience of explanation for the purpose of because divider network can be made an integral body with other circuit, so just do not had terminal.Similarly, term input, output and ground connection are also just established for convenience of explanation, because many resistor networks can have a plurality of inputs, output and ground connection.In addition, all elements are regarded as " attachable ", because when making a whole network, these elements can not be connected on the terminal; It is possible finishing all connections except that network itself.
In precision resistance voltage divider, usually need: (1) in operating temperature range, the variation of resistance value ratio must not be above every degree 1,000,000/0.5(0.5ppm/ ℃), (2) are no more than 1,000,000/2.0(2.0ppm) in operating voltage range.In the past, Ke Ke requirement has only by adopting several wire-wound resistors that carefully manufacture just can be met like this, and these wire-wound resistors are very expensive, and size is also quite big.
Now consult Fig. 2, wherein show the film resistance divider network of a prior art, its resistive ratio stability is suitable for some, but the application of wire-wound resistor is used in not all previous demand.
Film resistance 22 comprises a substrate 24.Substrate 24 can be glass or other materials, but preferably thermal conductivity is about the aluminium oxide (Al of copper thermal conductivity 5%
2O
3).Usually, its long light 3/4 inch, wide 1/2 inch, thick 0.025 inch.
With sputter, vacuum evaporation or additive method resistance material is deposited on the substrate 24, in the operation that is right after, answer last layer photo resistance material on the resistance material again, add photomask, uv-exposure, chemical etching removes unwanted material then, stays needed resistive element 26 and 28 with the form of spiral.This circuitous pattern is so meticulous, so that for an observer, can be considered as a complete rectangle to it.The spiral circuitous pattern generally also includes some along separate routes, just as well known for one of skill in the art, during " laser adjustment " operation, with laser these is evaporated along separate routes, thereby obtains accurate resistance and resistance value ratio.Almost the resistance material that generally uses is Nichrome nurse (Nicrome) (a kind of registered trade mark of a Driver Harris company) alloy, and it contains 60% nickel, 24% iron, 16% chromium and 0.1% carbon.Owing to be deposited to the variation of on-chip film metallurgy, the TCR of the final metal film that forms changes from the end to end of substrate.TCR is mild with the distance of crossing substrate, but not necessarily linear variation.First resistive element 26 is higher one of dissipation power in two resistive elements.
First resistive element 26 can be connected to input 30 and output 32, and the latter can be connected to second resistive element 28.Second resistive element 28 also can be connected to earth terminal 34.
Though the heat conduction efficiency between two resistive elements 26 and 28 with the two elements size reduce and element between reducing and increase at interval because the influence of series of factors has a restriction to size.
Now consult Fig. 3, a kind of resistive divider network 40 that has improved shown in it, network 40 is deposited on the substrate 42.Compare with traditional similar resistive divider network, substrate 42 is big slightly, long 1 1/2 inch (1-1/2 "), wide 5/8 inch, and thick be 0.025 inch.Be deposited on the resistance material on the substrate 42, be divided into many sections.A section is defined as first resistive element, and it is made up of to 50 first group of resistance element 46.Being staggered between first group of sub-element 46 to 50 is second resistive element, and it is made up of to 55 second group of resistance element 52.
First group of resistance element 46 to 50 is connected into first resistive element 26 that is equivalent to Fig. 2 mutually.Similarly, second group of resistance element 52 to 55 also is connected into second resistive element 28 that is equivalent to Fig. 2 mutually.
Can be connected to input 56 at substrate first resistance element 46 on one side, last resistance element 50 of another side then can be connected to output 58.Can be connected to earth terminal 60 at first resistance element 52 on one side, last resistance element 55 then can be connected to output 58.
The resistive divider network of comparison diagram 2 and Fig. 3 can find that the substantial improvement of resistive ratio stability just could obtain owing to the TCR tracking.
For example, the TCR that supposes resistance material changes to every degree 6/1000000ths of substrate right edge from every degree 10/1000000ths of substrate left hand edge, and this all is suitable for the substrate among Fig. 2 and Fig. 3.
Concerning network 22, the TCR of element 26 right hand edges is approximately every degree 6.50/1000000ths.So obvious, the average T CR of resistive element 26 is that every degree 1,000,000/(10.00+6.50)/2 is 8.25ppm/ ℃.Because it is 6.20ppm/ ℃ that the left side of second resistive element 28 is approximately the every degree 1,000,000/(6.40+6.00)/2 of average T CR of 6.40/1000000ths, second resistive element 28 of every degree.So obvious, TCR's is poor, or claims that the TCR tracking is that every degree 1,000,000/(8.25-6.20) is 2.05ppm/ ℃.
Please see improved divider network 40, suppose when we from moving left to the right side, have one nonlinear, but the dull TCR that descends, concerning the different resistance elements of first resistive element, its average T CR typically may be so: sub-element 46 is 10.00; Sub-element 47 is 8.50; Sub-element 48 is 8.00; Sub-element 49 is 7.00; Sub-element 50 is 6.20.The average T CR of first resistive element is 7.94ppm/ ℃ for every degree 1,000,000/(10.00+8.50+8.00+7.00+6.20)/5 then so.Concerning second resistive element, the interpolate value of sub-element TCR will be: sub-element 52 is 9.25; Sub-element 53 is 8.25; Sub-element 54 is 7.50; Sub-element 55 is 6.60.So, the mean temperature coefficient of resistance of second resistive element will be that every degree 1,000,000/(9.25+8.25+7.50+6.60)/4 is 7.90ppm/ ℃.The average T CR's of resistor network 40 is poor so, i.e. TCR tracking is 0.04ppm/ ℃ for every degree 1,000,000/(7.94-7.90) then.
New staggered designs, its TCR tracking has improved 2.05ppm/ ℃ of ÷ 0.04ppm/ ℃=51 to 1 than prior art design in the past.So, preferred embodiment shows to have and is about 5,100% improvement.
Look back the above, fairly obvious, along with the increase of sub-element number, the temperature coefficient of resistance value ratio will improve, and go to zero.And, if to another side, the variation of TCR is linear from one side of substrate, as long as the sum of sub-element is an odd number, no matter how many numbers of used sub-element is, the temperature coefficient tracking of two resitstance voltage dividers will be desirable (equalling zero) all the time so.
In addition, obviously because temperature is directly relevant with each resistive element unit are dissipation power, prior art has along the even shortcoming of resistive element temperature distributing disproportionation.The sub-element of high and low power dissipation component is staggered, and the sub-element of the resistive element of dissipation higher-wattage is placed on the limit of substrate, make them surround the sub-element of the resistive element of dissipation lower-wattage effectively, can obtain much even temperature along substrate.
In order to assess the present invention, be used in the method for splatter one deck Nichrome nurse film on the high purity aluminium oxide substrate, having manufactured 17 voltage ratios is that 64(64 is than 1) the thin film resistor network.
Five sub-element 46 to 50 usefulness laser are adjusted to approximately equalised resistance, and sub-element 52 to 55 is also adjusted to approximately equalised resistance.The all-in resistance of sub-element 46 to 50 is 9.84500 megaohms ± 0.1%.The all-in resistance of sub-element 52 to 55 then is 0.15619 megaohm ± 0.1%.The nominal voltage ratio is (9.84500+0.15619)/0.15619=64/1 (promptly 64 to 1).Computer is adjusted machine by software instruction control laser, make this ratio drop on nominal value ± 0.05% in.
Spend to the temperature range build-in tests of 58 degree the TCR of two groups of sub-elements Celsius 18, and listed difference table for each network.Absolute TCR distributes greatly in the scope of every degree 1/1000000th to 6, and the TCR of resistance value ratio then is distributed in the scope of every degree 0.02/1000000th to 0.30, and its mean value is every degree 0.12/1000000th, and this value is than giving every degree 1,000,000 that sets the goal/0.50 4 times.
Concerning input voltage changes 1000 volts (100 volts to 1100 volts), the power coefficient of PCR(resistance value ratio) is distributed in 0.09/1000000th to 0.44 the scope.Average resistance value ratio power coefficient is 0.27/1000000th.This value sets the goal 2.0 8/1000000ths times than giving.
By relatively, the typical characteristics index of prior art network 22 is 2/1000000ths temperature coefficient tracking and 10/1000000ths resistance value ratio power coefficient.
In view of can making a lot of possible embodiment from the present invention, and do not surmount scope of the present invention, do not say and opinion, just for for the purpose of illustrating and be shown among the accompanying drawing, the present invention is not limited to these contents for given contents before all.
Claims (18)
1, a resistor network is characterized in that including:
A substrate;
One is configured in this on-chip first resistive element, and it has two sections that connect mutually, and one of them section can be connected to input, and another section can be connected to output;
One is configured in that this is on-chip, is in a section of described first resistive element and second resistive element between another section, and this second resistive element has an end can be connected to earth terminal, and the other end can be connected to output.
2,, it is characterized in that first resistive element has being same as or is higher than the resistance value of second resistive element according to the desired resistor network of claim 1.
3, according to the desired resistor network of claim 1, it is characterized in that second resistive element is rectangle substantially, each section of first resistive element is rectangle substantially, and is configured in the contiguous opposite of second resistive element.
4,, it is characterized in that all sections of first resistive element have the resistance that equates substantially according to the desired resistor network of claim 1.
5, a resistor network is characterized in that including:
A substrate;
First resistive element of supporting by this substrate, it have many spaced apart on substrate, the resistance element that can connect mutually, in these many sub-elements, order can be received input for first sub-element, then can receive output for the sub-element of last in proper order in these many sub-elements;
Second resistive element supporting by this substrate, it has at least one to be configured in on-chip resistance element, this sub-element is near described resistance element, and be between them, above-mentioned at least one resistance element of second resistive element, there is a section can be connected to order in many sub-elements of first resistive element, has a section can be connected to earth terminal on last.
6,, it is characterized in that first resistive element has being same as or is higher than the resistance value of second resistive element according to the desired resistor network of claim 5.
7, according to the desired resistor network of claim 5, the sub-element that it is characterized in that first resistive element all is a rectangle, and second resistive element has many spaced apart at resistance element on-chip, that can connect mutually, and a plurality of sub-elements of these sub-elements and first resistive element are staggered and are in the same place.
8, according to the desired resistor network of claim 7, it is characterized in that first resistive element has the odd number sub-element, second resistive element then has the even number sub-element.
9, desired according to Claim 8 resistor network it is characterized in that all sub-elements of each first resistive element all have the resistance that equates substantially, and all sub-elements of second resistive element also all has the resistance that equates substantially.
10, a resistor network is characterized in that including:
A substrate;
One on this substrate deposit become first resistive element of spiral circuitous pattern, it comprises many spaced apart at resistance element on-chip, that can connect mutually, first be connected to input in these resistance elements, last in the resistance element then can be connected to output;
One on this substrate deposit become second resistive element of spiral circuitous pattern, it has many spaced apart at on-chip resistance element, the sub-element of these sub-elements and described first resistive element is staggered in together, first be connected to earth terminal of this resistance element, last of this each element of resistance then can be connected to output.
11,, it is characterized in that first resistive element has being same as or is higher than the resistance value of second resistive element according to the desired resistor network of claim 10.
12, according to the desired resistor network of claim 10, the sub-element that it is characterized in that first resistive element is a rectangle, and the sub-element of second resistive element also is a rectangle.
13, according to the desired resistor network of claim 12, it is characterized in that first resistive element has the odd number sub-element, second resistive element then has the even number sub-element.
14,, it is characterized in that all sub-elements of each first resistive element all have equal resistance, and all sub-elements of second resistive element also all there is equal resistance according to the desired resistor network of claim 13.
15,, it is characterized in that described resistive element all contains film resistor according to the desired resistor network of claim 10.
16,, it is characterized in that described resistive element all contains thick-film resistor according to the desired resistor network of claim 10.
17, a kind of method of making resistor network is characterized in that comprising following each operation:
A), deposit resistance material on substrate;
B), remove resistance material to define first resistive element of first section and second section;
C), remove resistance material to determine second resistive element, it has a section between two sections that are staggered in first resistive element.
D), first section and second section of first resistive element carried out the laser adjustment, its resistance value is equated substantially.
18,, comprise second resistive element carried out the laser adjustment, to set up the step of giving fixed resistance ratio between first and second resistive element according to the desired method of claim 17.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77898485A | 1985-09-23 | 1985-09-23 | |
| US06/778,984 | 1985-09-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86106269A true CN86106269A (en) | 1987-03-18 |
| CN1011456B CN1011456B (en) | 1991-01-30 |
Family
ID=25114948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 86106269 Expired CN1011456B (en) | 1985-09-23 | 1986-09-20 | Apparatus and method for providing improved resistive ratio stability of a resistive divider network |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS6269601A (en) |
| CN (1) | CN1011456B (en) |
| CA (1) | CA1267943A (en) |
| DE (1) | DE3627213A1 (en) |
| FR (1) | FR2587828B1 (en) |
| GB (1) | GB2181009B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102830351A (en) * | 2012-08-31 | 2012-12-19 | 宁德时代新能源科技有限公司 | Device for condition monitoring and fault diagnosis of high-voltage switch |
| CN103443635A (en) * | 2011-02-25 | 2013-12-11 | Abb股份公司 | Resistive voltage divider with improved phase accuracy |
| CN103891047A (en) * | 2011-10-26 | 2014-06-25 | 株式会社村田制作所 | Variable capacitance element and high-frequency device |
| CN104052476A (en) * | 2013-03-15 | 2014-09-17 | 英飞凌科技股份有限公司 | Circuit arrangement and method for operating an analog-to-digital converter |
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|---|---|---|---|---|
| US4968901A (en) * | 1989-05-16 | 1990-11-06 | Burr-Brown Corporation | Integrated circuit high frequency input attenuator circuit |
| DE4301552A1 (en) * | 1993-01-21 | 1994-07-28 | Telefunken Microelectron | Integrated power resistor arrangement |
| JP4147875B2 (en) * | 2002-09-19 | 2008-09-10 | 住友金属鉱山株式会社 | Brazing material, method of assembling semiconductor device using the same, and semiconductor device |
| US6892443B2 (en) | 2002-11-25 | 2005-05-17 | Vishay Intertechnology | Method of manufacturing a resistor |
| JP2008513981A (en) * | 2004-09-21 | 2008-05-01 | マイクロブリッジ テクノロジーズ インコーポレイテッド | Compensation for trimming-induced shift of temperature coefficient of resistance |
| US8723637B2 (en) | 2012-04-10 | 2014-05-13 | Analog Devices, Inc. | Method for altering electrical and thermal properties of resistive materials |
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| DE514115C (en) * | 1930-12-09 | Eugen Specht | Egg heads | |
| DE27632C (en) * | L. GARNIER und CH. GUYARD in Paris | Device for cutting boiled eggs | ||
| DE619144C (en) * | 1935-09-23 | Josef Schleich | Egg cup with head device for boiled eggs | |
| DE167059C (en) * | ||||
| FR472200A (en) * | 1914-05-14 | 1914-11-25 | Paul Fleury | Egg cutter |
| US2811188A (en) * | 1955-09-14 | 1957-10-29 | Pavelka Joseph | Egg opener |
| DE1952496U (en) * | 1966-08-04 | 1966-12-29 | Herbert Furrer | EGG OPENER. |
| US3512115A (en) * | 1968-03-12 | 1970-05-12 | Angstrohm Precision Inc | Thin film resistor network |
| US3676807A (en) * | 1971-05-19 | 1972-07-11 | Tektronix Inc | Film attenuator with distributed capacitance high frequency compensation |
| US3673492A (en) * | 1971-07-27 | 1972-06-27 | Us Army | Voltage controlled hybrid attenuator |
| GB1546091A (en) * | 1975-02-28 | 1979-05-16 | Johnson Matthey Co Ltd | Thermometers |
| FR2391538A1 (en) * | 1977-05-16 | 1978-12-15 | Asahi Chemical Ind | THIN LAYER STRENGTH AND MANUFACTURING PROCESS |
| JPS5544694A (en) * | 1978-09-27 | 1980-03-29 | Nec Corp | X/y table |
| US4272739A (en) * | 1979-10-18 | 1981-06-09 | Morton Nesses | High-precision electrical signal attenuator structures |
| DE3144252A1 (en) * | 1981-11-07 | 1983-05-19 | Robert Bosch Gmbh, 7000 Stuttgart | VOLTAGE DIVIDER IN THICK OR THICK FILM TECHNOLOGY |
| DD205279B1 (en) * | 1981-12-22 | 1986-04-23 | Wolfgang Brode | METHOD FOR IMPROVING THE CONSTANCE OF THE RESISTANCE BEHAVIOR OF PRAESION RESISTANCE NETWORKS |
| US4475099A (en) * | 1983-06-27 | 1984-10-02 | Analogic Corporation | Voltage divider |
| JPS60130033A (en) * | 1983-12-16 | 1985-07-11 | Sony Corp | Built-in resistor of cathode ray tube |
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1986
- 1986-06-20 GB GB8615129A patent/GB2181009B/en not_active Expired
- 1986-07-02 CA CA000512898A patent/CA1267943A/en not_active Expired - Fee Related
- 1986-07-10 FR FR8610113A patent/FR2587828B1/en not_active Expired - Fee Related
- 1986-08-11 DE DE19863627213 patent/DE3627213A1/en active Granted
- 1986-09-20 JP JP61223491A patent/JPS6269601A/en active Pending
- 1986-09-20 CN CN 86106269 patent/CN1011456B/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103443635A (en) * | 2011-02-25 | 2013-12-11 | Abb股份公司 | Resistive voltage divider with improved phase accuracy |
| CN103443635B (en) * | 2011-02-25 | 2017-03-22 | Abb股份公司 | Resistive voltage divider with improved phase accuracy |
| CN103891047A (en) * | 2011-10-26 | 2014-06-25 | 株式会社村田制作所 | Variable capacitance element and high-frequency device |
| CN102830351A (en) * | 2012-08-31 | 2012-12-19 | 宁德时代新能源科技有限公司 | Device for condition monitoring and fault diagnosis of high-voltage switch |
| CN104052476A (en) * | 2013-03-15 | 2014-09-17 | 英飞凌科技股份有限公司 | Circuit arrangement and method for operating an analog-to-digital converter |
| CN104052476B (en) * | 2013-03-15 | 2018-02-06 | 英飞凌科技股份有限公司 | For operating the circuit arrangement and method of analog-digital converter |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3627213C2 (en) | 1993-02-11 |
| FR2587828B1 (en) | 1992-11-06 |
| GB2181009A (en) | 1987-04-08 |
| GB2181009B (en) | 1989-11-29 |
| JPS6269601A (en) | 1987-03-30 |
| FR2587828A1 (en) | 1987-03-27 |
| CA1267943A (en) | 1990-04-17 |
| GB8615129D0 (en) | 1986-07-23 |
| CN1011456B (en) | 1991-01-30 |
| DE3627213A1 (en) | 1987-03-26 |
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