CN85104652A - It in photoelectric device the film of the used pnictide of waveguide - Google Patents
It in photoelectric device the film of the used pnictide of waveguide Download PDFInfo
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- CN85104652A CN85104652A CN198585104652A CN85104652A CN85104652A CN 85104652 A CN85104652 A CN 85104652A CN 198585104652 A CN198585104652 A CN 198585104652A CN 85104652 A CN85104652 A CN 85104652A CN 85104652 A CN85104652 A CN 85104652A
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Abstract
A kind of semiconductor layer of photoelectric device has the deposited film of one or more layers rich pnictide.This pnictide is littler than the reflection index of semiconductor layer.These films provide waveguiding effect to the light in the semiconductor layer of photoelectric device, such as solid-state laser and light emitting diode and with the waveguide of linking up in these devices.
Description
This application case is that the continuation of pending application of the U.S. Patent application of following narration is partly applied for, these unsettled U.S. patent application case number be 509,210; 581,115; 581,140; 581,171.
The relevant ， And with following pending application case of these applications transfers same assignee as the application.The content of these application cases is in conjunction with in the present invention, the U.S. Patent application that is entitled as " preparation method of chain connection semi-conducting material phosphorus and equipment and the device made from the material of its preparation ", application number is 335,706, and the applying date is now to abandon on November 30th, 1981; Being entitled as " the monocrystalline phosphorus that is formed by steam when alkali metal exists " application number is 419,537, and the applying date is September 17 nineteen eighty-two, also is that application number is that the continuation of 335,706 application cases is partly applied for; Being entitled as " semiconductor and other device that chain connects phosphate material and preparation thereof and uses and adopt this material to make " application number is 442,208, and the applying date is November 16 nineteen eighty-two, is that application number is the continuation part application case of 335,706 and 419,537 application cases; Being entitled as " chain connects the phosphate material vacuum-evaporated film " application number is 509,159, and the applying date is June 29 nineteen eighty-three; Being entitled as " graphitic source of adding vapour of an alkali metal " application number is 509,157, and the applying date is June 29 nineteen eighty-three; Being entitled as " semiconductor film and the formed device thereof that connect the phosphate material sputter with chain " application number is 509,175, and the applying date is June 29 nineteen eighty-three; Being entitled as " the MIS device that adopts the insulating barrier that is pnictide or polyphosphide basically " application number is 509,210, and the applying date is June 29 nineteen eighty-three; Being entitled as " liquid growth of polyphosphide crystal " application number is 509,158, and the applying date is June 29 nineteen eighty-three; Being entitled as " thermal destruction of the pnictide film that forms in high vacuum technology " application number is 581,139, and the applying date is on February 17th, 1984, is that application number is that 509,159 continuation is partly applied for; " being entitled as with pnictide particularly with the passivation and the insulation of the III with layer structure-V family device of amorphous phosphorus family element thing ", application number was 581,115, and the applying date is on February 17th, 1984; Being entitled as " pnictide potential barrier in quantum trap device " application number is 581,140, and the applying date is on February 17th, 1984; Being entitled as " being used for the pnictide film that waveguide is adopted in photoelectric device " application number is 581,171, and the applying date is on February 17th, 1984; Being entitled as " supplying with the particularly vacuum deposition processes of sputtering method of pnictide system continuously for one " application number is 581,103, and the applying date is on February 17th, 1984; Being entitled as " system, particularly chemical vapor deposition that are used for the continuous supply pnictide source of film deposit " application number is 581,102, and the applying date is on February 17th, 1984; Being entitled as " preparing high-purity white phosphorus method " application number is 581,105, and the applying date is on February 17th, 1984; Being entitled as " the phosphorus family element thing trap that is used for vacuum system " application number is 581,101, and the applying date is on February 17th, 1984; Being entitled as " adopting the high vacuum depositing technics of supplying with the pnictide system continuously " application number is 581,104, and the applying date is on February 17th, 1984; Being entitled as " with the field-effect transistor of many phosphorus familyizatioies thing semiconductor fabrication " application number is 619,053, and the applying date is on June 11st, 1984; Be that application number is 442,208 part below, being entitled as " doping that chain connects phosphate material " application number is 677,911, and the applying date is on December 4th, 1984; Be entitled as " phosphate material and preparation and use that chain connects, and the semiconductor and other device that adopt this material preparation " application number is 677,845, the applying date is on December 4th, 1984, be entitled as " film and the preparation and the use of chain connection phosphate material, and adopting semiconductor and other device of this material preparation " application number is 680,369, the applying date is on December 11st, 1984; Being entitled as " chemical vapor deposition of the phosphate material that chain connects and with semiconductor and other device of these material preparations " application number is 678,599, and the applying date is on December 5th, 1984; Being entitled as " being used to form the gas phase transmitting device of chain connection phosphate material and semiconductor and other device made from the material that this prepares " application number is 678,598, and the applying date is on December 5th, 1984; Being entitled as " composition and the enhancing of the phosphate material that chain connects " application number is 680,781, and the applying date is on December 11st, 1984; Being entitled as " form chain with the evaporation that shines and connect the method and apparatus of phosphate material and semiconductor and other device made from the material of its preparation " application number is 680,369, and the applying date is on December 11st, 1984.
The present invention relates to be the used pnictide film of waveguide in photoelectric device; The present invention relates to compound, intermetallic compound semicon ductor; The present invention relates to two dimension, three-dimensional four-dimensional semiconductor; The present invention relates to III-V family semiconductor; The present invention relates to solid-state laser and light emitting diode.
The all cpds and the intermetallic compound semicon ductor that contain pnictide adopt in photoelectric device at present, such as solid-state laser and light emitting diode.For light being imported and derives these devices, the film that on these devices, uses have than semi-conducting material lower to the reflection of light index.Yet the original oxide of semi-conducting material can not form good film, and good adherence or good interfacial characteristics can not be provided.The U.S. Patent application of mentioning according to the top, (european patent application is in addition: 84 304 4272 to be entitled as " with pnictide particularly with the passivation and the insulation of the III with layer structure-V family device of amorphous phosphorus family element thing ", the number of publishing is: 0132326, date is on January 30th, 1985), can the grow film of rich pnictide has good adherence and interfacial characteristics containing on the semiconductor of pnictide.
Therefore the objective of the invention is to provide waveguide to photoelectric device.
Another object of the present invention is to provide waveguide to the photoelectric device that contains pnictide.
Another object of the present invention is to comprising two dimension, three-dimensional, and four-dimensional semi-conductive photoelectric device provides waveguide.
Further aim of the present invention is to provide waveguide to such photoelectric device; As solid-state laser and light emitting diode, and the waveguide that from these devices, imports and derive.
Some part that other purpose of the present invention occurs afterwards will be obviously.Therefore, present invention includes some characteristics that have in the manufacturing and the project of characteristic, the relation between the element that goes out of institute's example will be described afterwards in the text.Point out in claim in field involved in the present invention.
For fully understanding essence of the present invention and purpose, bottom will be described in detail with reference to the accompanying drawings, and wherein unique accompanying drawing is the cross section cutaway view by the photoelectric device of the present invention's realization.
Refer to figure now, electro-optical device is 20 usually, according to the semiconductor body 22 that the present invention includes compound or Intermetallic compound semi-conducting material.For example comprise two dimension, three-dimensional, four-dimensional semi-conductive pnictide adopts in photoelectric device such as solid-state laser and photodiode at present.One or more layers rich phosphorus family layer 24 and 26 is deposited on the body 22." both persons' refractive index is lower than the refractive index of semiconductor bulk 22n ' for film 24 and layer 26n.Device 20 can be that Laser emission or collection optics maybe can be the waveguides that imports or derive from device.Just semiconductor body 22 can be or also can not be that electricity excites.
Be used for forming good film because the high pnictide in various element phosphorus family things and the polyphosphide has been found, this film has good adherence and interfacial characteristics to photoelectric conductor material.Because wherein some material has the reflection index lower than semiconductor.The waveguide that the present invention wants to obtain is to realize by the represented structure that goes out among the figure.
Particularly semiconductor body 22, may be III-V family material such as GaAs, Inp, Gap, and rich pnictide layer may be a phosphorus, as monocrystalline phosphorus or red phosphorus, or have stratiform, folding, the new formation of the amorphous phosphorus of local sheet, open in U.S.'s pending application, it is entitled as " with pnictide particularly with the passivation and the insulation of the III with layer structure-V family device of amorphous phosphorus family element thing ".Other the element phosphorus family thing or the polyphosphide of high pnictide, as Mp,
X, wherein M is an alkali metal, p is a pnictide.The included scope of X from 15 to infinity.Polyphosphide is preferable many pnictides, particularly contains the potassium polyphosphide.
The semiconductor that uses in my invention comprises that pnictide is commonly referred to Intermetallic compound or compound.III-V family semiconducting compound is an intermetallic semiconductor, comprises from the element of III row and V column element periodic table, and as gallium phosphide, GaAs, gallium antimonide, indium phosphide, indium arsenide, the four-dimensional semiconductor of indium antimonide and similar three peacekeepings.We are meant that the group-v element in the periodic table of elements is a phosphorus to pnictide, nitrogen, arsenic, antimony, and bismuth.
This will see the purpose of above-mentioned proposition, comparatively obviously and effectively learn in the narration in front, do not depart from the scope of the present invention owing to done some variation in the above-mentioned article, therefore will to be considered as be that example shows that And does not have limitation for all substances that comprise in the foregoing description of expectation or description of drawings.
Can understand like this, following claim wishes to comprise all general and special characteristics of describing among the present invention, and the related invention field of all claims statements, and with regard to the angle of language, can be described as to be included in wherein.
Particularly understand like this, there is the mixture that matches of such component in the place that component of stating with odd number in above-mentioned claim or compound also can be included in any permission.
Claims (23)
- When describing my invention, I as new with desirable claim with patent clause acquisition protection am at desired claim:1, a photoelectric device comprises:A) semiconductor body; WithB) has a layer that is used for light wave is imported the rich pnictide of above-mentioned body at least.
- 2, in the device of claim 1, above-mentioned semiconductor body comprises monopnictide.
- 3, in the device of claim 1, above-mentioned semiconductor body comprises a compound semiconductor.
- 4, in the device of claim 3, above-mentioned compound semiconductor comprises monopnictide.
- 5, in the device of claim 1, above-mentioned semiconductor body comprises an intermetallic compound semicon ductor.
- 6, in the device of claim 5, above-mentioned intermetallic compound semicon ductor comprises the monopnictide composition.
- 7, in the device of claim 1, above-mentioned semiconductor body comprises one III-V family semiconductor.
- 8, in the device of claim 1, above-mentioned semiconductor comprises a two-dimensional semiconductor.
- 9, in the device of claim 1, above-mentioned semiconductor body comprises a 3 D semiconductor.
- 10, in the device of claim 9, above-mentioned 3 D semiconductor comprises monopnictide.
- 11, in the device of claim 1, above-mentioned semiconductor comprises a four-dimensional semiconductor.
- 12, in the device of claim 11, above-mentioned four-dimensional semiconductor comprises monopnictide.
- 13, in the device of any claim 1,2 or 5, above-mentioned pnictide layer comprises phosphorus.
- 14, in the device of claim 13, above-mentioned layer comprises MP X, wherein M is an alkali metal, and p is a phosphorus, and the scope of X is to comprise from 15 to infinity.
- 15, in the device of claim 13, above-mentioned layer is a monocrystalline.
- 16, in the device of claim 15, above-mentioned layer is pure phosphorus basically.
- 17, in the device of claim 13, above-mentioned layer is pure phosphorus basically.
- 18, in the device of claim 17, above-mentioned layer is a red phosphorus.
- 19, in the device of claim 13, above-mentioned pnictide layer comprises the phosphorus with stratiform local order.
- 20, in the device of claim 19, above-mentioned phosphorus layer is unbodied.
- 21, the device in any claim 1,2 or 5, above-mentioned layer has the reflection index more less than above-mentioned semiconductor body.
- 22, the device in any claim 1,2 or 5, above-mentioned layer is a pnictide more than.
- 23, in the device in claim 22, above-mentioned many P elementsization thing is MPx, and wherein M is an alkali metal, and P is a pnictide.The scope of X is to comprise from 15 to infinity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN198585104652A CN85104652A (en) | 1985-06-17 | 1985-06-17 | It in photoelectric device the film of the used pnictide of waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN198585104652A CN85104652A (en) | 1985-06-17 | 1985-06-17 | It in photoelectric device the film of the used pnictide of waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN85104652A true CN85104652A (en) | 1986-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN198585104652A Pending CN85104652A (en) | 1985-06-17 | 1985-06-17 | It in photoelectric device the film of the used pnictide of waveguide |
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| CN (1) | CN85104652A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113272695A (en) * | 2019-01-29 | 2021-08-17 | 国际商业机器公司 | Waveguide structure for qubit-optical-CMOS integration |
-
1985
- 1985-06-17 CN CN198585104652A patent/CN85104652A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113272695A (en) * | 2019-01-29 | 2021-08-17 | 国际商业机器公司 | Waveguide structure for qubit-optical-CMOS integration |
| US11730067B2 (en) | 2019-01-29 | 2023-08-15 | International Business Machines Corporation | Qubit-optical-CMOS integration using structured substrates |
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