CN302022840S - 发光二极管阵列 - Google Patents

发光二极管阵列

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Publication number
CN302022840S
CN302022840S CN201230017570.3F CN201230017570F CN302022840S CN 302022840 S CN302022840 S CN 302022840S CN 201230017570 F CN201230017570 F CN 201230017570F CN 302022840 S CN302022840 S CN 302022840S
Authority
CN
China
Prior art keywords
design
light
led array
diode array
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201230017570.3F
Other languages
English (en)
Inventor
叶慧君
沈建赋
柯淙凯
Original Assignee
晶元光电股份有限公司
Filing date
Publication date
Application filed by 晶元光电股份有限公司 filed Critical 晶元光电股份有限公司
Application granted granted Critical
Publication of CN302022840S publication Critical patent/CN302022840S/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

1.本外观设计产品的名称:发光二极管阵列。2.本外观设计产品的用途:是一种包含基板及发光单元的发光二极管阵列。3.本外观设计的设计要点:发光单元的几何形状与线条纹路的搭配。4.最能表明设计要点的图片或者照片:立体图1。
CN201230017570.3F 2012-01-20 发光二极管阵列 Expired - Lifetime CN302022840S (zh)

Publications (1)

Publication Number Publication Date
CN302022840S true CN302022840S (zh) 2012-08-01

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Legal Events

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GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20120801

Main classification number: 26-04