CN301349086S - led - Google Patents

led

Info

Publication number
CN301349086S
CN301349086S CN200930321415.9F CN200930321415F CN301349086S CN 301349086 S CN301349086 S CN 301349086S CN 200930321415 F CN200930321415 F CN 200930321415F CN 301349086 S CN301349086 S CN 301349086S
Authority
CN
China
Prior art keywords
design
light
emitting diode
led
picture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200930321415.9F
Other languages
Chinese (zh)
Inventor
赖志铭
萧明扬
杨宏彬
Original Assignee
富士迈半导体精密工业（上海）有限公司;沛鑫能源科技股份有限公司
Filing date
Publication date
Application filed by 富士迈半导体精密工业（上海）有限公司;沛鑫能源科技股份有限公司 filed Critical 富士迈半导体精密工业（上海）有限公司;沛鑫能源科技股份有限公司
Priority to US29/353,345 priority Critical patent/USD624884S1/en
Priority to US29/361,129 priority patent/USD654443S1/en
Application granted granted Critical
Publication of CN301349086S publication Critical patent/CN301349086S/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

1.本外观设计产品的名称为发光二极管。 1. The name of this design product is light-emitting diode. 2.本外观设计产品用于照明领域。 2. This design product is used in the field of lighting. 3.本外观设计的设计要点为该发光二极管的形状。 3. The main point of this design is the shape of the light-emitting diode. 4.本外观设计的立体图为最能表明设计要点的图片。 4. The three-dimensional picture of this design is the picture that best shows the main points of the design.

CN200930321415.9F 2009-10-26 2009-10-26 led Expired - Fee Related CN301349086S (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US29/353,345 USD624884S1 (en) 2009-10-26 2010-01-07 Light emitting diode
US29/361,129 USD654443S1 (en) 2009-10-26 2010-05-05 Light emitting diode

Publications (1)

Publication Number Publication Date
CN301349086S true CN301349086S (en) 2010-09-15

Family

ID=

Similar Documents

Publication Publication Date Title
BR112012012396A2 (en)
BR112012008267A2 (en)
BR112012008195A2 (en)
BR112012000607A2 (en)
BRPI0924307A2 (en)
BR112012003080A2 (en)
BR122021004633A2 (en)
BR122017024704A2 (en)
BR112012012487A2 (en)
BR112012000665A2 (en)
BR112012003853A2 (en)
BR112012012080A2 (en)
BR112012009797A2 (en)
BR112012009446A2 (en)
BR112012010357A2 (en)
BR112012007656A2 (en)
BR122019005883A2 (en)
BR112012002627A2 (en)
BR112012001263A2 (en)
BR112012014856A2 (en)
BR112012007654A2 (en)
BR112012007672A2 (en)
BR112012005951A2 (en)
BRPI0924617A2 (en)
BR122017013721A2 (en)

Legal Events

Date Code Title Description
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Main classification number: 26-04

Address after: 201600 Shanghai City, Songjiang District Songjiang Industrial Zone West science and Technology Industrial Park No. 500 Wen Ji Lu

Patentee after: Foxsemicon Semiconductor Precision (Shanghai) Inc.

Patentee after: Foxsemicon Integrated Technology Inc.

Address before: 201600 Shanghai City, Songjiang District Songjiang Industrial Zone West science and Technology Industrial Park No. 500 Wen Ji Lu

Patentee before: Foxsemicon Semiconductor Precision (Shanghai) Inc.

Patentee before: Foxsemicon Integrated Technology Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100915

Main classification number: 26-04

Termination date: 20131026