CN2938405Y - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN2938405Y
CN2938405Y CN 200620106600 CN200620106600U CN2938405Y CN 2938405 Y CN2938405 Y CN 2938405Y CN 200620106600 CN200620106600 CN 200620106600 CN 200620106600 U CN200620106600 U CN 200620106600U CN 2938405 Y CN2938405 Y CN 2938405Y
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light
emitting diode
backlight unit
diode chip
chip
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翁金荣
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HANGZHOU XINWANG LIGHTING TECHNOLOGY CO., LTD.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body

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Abstract

本实用新型公开了一种发光二极管，其主要用途为照明。本实用新型包括封装管座、至少一个第一发光二极管芯片、导电基板和黄色荧光层，封装管座上设有光反射器，导电基板固定在封装管座上，第一发光二极管芯片为蓝光发光二极管芯片，该第一发光二极管芯片固定在封装管座上，黄色荧光层设置在第一发光二极管芯片的上方，其中发光二极管还包括至少一个第二发光二极管芯片，第二发光二极管芯片的波长为580－640nm，该第二发光二极管芯片固定在封装管座上，第一发光二极管芯片、第二发光二极管芯片及导电基板之间相互电气连接在一起。其优点是具有高显色性的白光，且兼具良好的色彩还原性，即使在低色温的情况下，显色指数也能在Ra80以上。

Description

发光二极管
技术领域
本实用新型涉及一种白光发光二极管，特别是涉及一种其光源包含蓝光和黄光的白光二极管，其主要用途为照明。
背景技术
现有的白光发光二极管通常是在封装管座内设有光反射器，并于封装管座内安装有蓝光发光二极管芯片，该蓝光发光二极管芯片通过金线与印制电路板电气连接，该蓝光发光二极管芯片上还设有黄色荧光层。发光二极管通电使用时，蓝光发光二极管芯片发出的一部分蓝光激发黄色荧光层发出黄光，另一部分蓝光透射出来，由蓝光LED芯片激发黄色荧光层所产生的黄色光与透射的蓝光组成白光。但采用这种结构的发光二极管的显色性较低，色彩还原性较差；特别是当其被应用在普通照明领域时，其显色性无法达到普通照明的要求。
发明内容
本实用新型所要解决的技术问题是提供一种具有高显色性的白光发光二极管。
本实用新型解决其技术方案所采用的技术方案是：该发光二极管主要包括封装管座、至少一个第一发光二极管芯片、导电基板和黄色荧光层，所述封装管座上设有光反射器，所述导电基板固定在封装管座上，所述第一发光二极管芯片为蓝光发光二极管芯片，该第一发光二极管芯片固定在封装管座上，所述黄色荧光层设置在所述第一发光二极管芯片的上方，其中，所述发光二极管还包括至少一个第二发光二极管芯片，所述第二发光二极管芯片的波长为580-640nm，该第二发光二极管芯片固定在封装管座上，所述第一发光二极管芯片、第二发光二极管芯片及所述导电基板之间相互电气连接在一起。
作为本实用新型的优选技术方案，所述第二发光二极管芯片的波长为600-640nm，此时本实用新型所发出的白光的显色性更好。
作为本实用新型的更优选技术方案，所述第二发光二极管芯片的波长为620-630nm，此时实用新型所发出的白光的显色性最佳，可达到RA85-95。
本实用新型所述第一发光二极管芯片和第二发光二极管芯片相互之间可串联和/或并联在一起。
本实用新型所述第二发光二极管芯片有多个，各第二发光二极管芯片相互之间可串联和/或并联在一起。
作为本实用新型的实施方案的改进，所述发光二极管还包括透光介质，该透光介质设于所述第一发光二极管芯片和第二发光二极管芯片的上方并位于黄色荧光层的下方。
与现有技术相比，本实用新型的优点是：由于增加了其波长在580-640nm范围内的第二发光二极管芯片，使得第一发光二极管芯片、第二发光二极管芯片及黄色荧光层发出的光共同形成具有高显色性的白光，且兼具良好的色彩还原性；不仅如此，即使在低色温的情况下，其显色指数也能在Ra80以上。
附图说明
图1是本实用新型发光二极管第一种实施方式的结构示意图；
图2是本实用新型发光二极管第二种实施方式的结构示意图。
具体实施方式
图1揭示了本实用新型发光二极管第一种实施方式的结构示意图。该发光二极管主要由一个第一发光二极管芯片1、一个第二发光二极管芯片2、黄色荧光层3、封装管座4、导电基板5组成；并且，在封装管座4上还设有光反射器6，其作用是提高各发光二极管芯片所发出的光的利用率。
其中，第一发光二极管芯片1为蓝光发光二极管芯片，第二发光二极管芯片2为选自580-640nm波长范围内的发光二极管芯片，第一发光二极管芯片1和第二发光二极管芯片2均固定在封装管座4上；黄色荧光层3设置在第一发光二极管芯片1的上方；此外，导电基板5固定在封装管座4上。第一发光二极管芯片1、第二发光二极管芯片2及导电基板5之间可通过导电线7(该导电线7可为金线或其他材质的导电连接线)相互电气连接在一起，其中，第一发光二极管芯片1和第二发光二极管芯片2可串联在一起，当然也可并联在一起；上述第一发光二极管芯片1和第二发光二极管芯片2则分别与导电基板5电气连接；该导电基板5可与外部电源连接从而使本实用新型发光二极管通电后正常工作。本实用新型发光二极管通电使用时，第一发光二极管芯片1、第二发光二极管芯片2和导电基板5与外部电源连接成一个回路，第一发光二极管芯片1发出的一部分蓝光激发黄色荧光层3发出黄光，另一部分蓝光和第二发光二极管芯片2发出的光从黄色荧光层3透射出来，由此，上述黄光、蓝光和第二发光二极管芯片2发出的光共同组成白光。
需要指出的是，选用波长在600-640nm范围内的第二发光二极管芯片2时，本实用新型所发出的白光的显色性较好；其中又以优选波长在620-630nm范围内的第二发光二极管芯片2时的显色性最佳，可达到RA85-95。
作为本实用新型发光二极管的另外一种实施方式，第二发光二极管芯片2可以有多个，各第二发光二极管芯片2相互之间可串联在一起，或者是各第二发光二极管芯片2相互之间并联在一起，当然也可以是各第二发光二极管芯片2相互之间同时兼具串联和并联的连接方式。
图2揭示了本实用新型发光二极管第二种实施方式的结构示意图。该第二种实施方式是在图1所示的第一种实施方式的基础上增加了透光介质8。透光介质8可以是由环氧树脂或硅树脂等材料加工而成的液态填充剂，该透光介质8如图2所示填充于第一发光二极管芯片1、第二发光二极管芯片2与黄色荧光层3之间，即该透光介质8在黄色荧光层3的下方并位于第一发光二极管芯片1和第二发光二极管芯片2的上方。本实用新型发光二极管通电使用后，第一发光二极管1发出的蓝光和第二发光二极管芯片2发出的光将首先进入透光介质8后再透射出来，随后再相应地激发黄色荧光层以及进行各色光的组合从而形成白光。使用该透光介质8的好处是使得本实用新型发光二极管形成的白光分布均匀，各区域均具有良好的显色性。
本实用新型任何一种结构的发光二极管中的第一发光二极管芯片1和第二发光二极管芯片2都可以有多个，它们相互之间除了如上文所述可串联或并联外，它们还可同时兼具串联和并联的多种组合连接方式。此外，本实用新型任何一种结构的发光二极管中的导电基板5可以是印制电路板。

Claims (6)

1、一种发光二极管，它包括封装管座、至少一个第一发光二极管芯片、导电基板和黄色荧光层，所述封装管座上设有光反射器，所述导电基板固定在封装管座上，所述第一发光二极管芯片为蓝光发光二极管芯片，该第一发光二极管芯片固定在封装管座上，所述黄色荧光层设置在所述第一发光二极管芯片的上方，其特征是：所述发光二极管还包括至少一个第二发光二极管芯片，所述第二发光二极管芯片的波长为580-640nm，该第二发光二极管芯片固定在封装管座上，所述第一发光二极管芯片、第二发光二极管芯片及所述导电基板之间相互电气连接在一起。
2、根据权利要求1所述的发光二极管，其特征是：所述第二发光二极管芯片的波长为600-640nm。
3、根据权利要求2所述的发光二极管，其特征是：所述第二发光二极管芯片的波长为620-630nm。
4、根据权利要求1至3中任一项所述的发光二极管，其特征是：所述第一发光二极管芯片和第二发光二极管芯片相互之间可串联和/或并联在一起。
5、根据权利要求1所述的发光二极管，其特征是：所述第二发光二极管芯片有多个，各第二发光二极管芯片相互之间可串联和/或并联在一起。
6、根据权利要求1所述的发光二极管，其特征是：所述发光二极管还包括透光介质，该透光介质设于所述第一发光二极管芯片和第二发光二极管芯片的上方并位于黄色荧光层的下方。
CN 200620106600 2006-08-11 2006-08-11 发光二极管 Expired - Fee Related CN2938405Y (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034916A (zh) * 2009-09-29 2011-04-27 三垦电气株式会社 半导体发光装置、半导体发光模块及照明装置
CN102142514A (zh) * 2010-01-28 2011-08-03 海洋王照明科技股份有限公司 一种led发光板及其制备方法
CN102317680A (zh) * 2009-03-10 2012-01-11 株式会社纳沛斯Led 灯罩及使用该灯罩的led灯
CN102543980A (zh) * 2010-12-31 2012-07-04 矽品精密工业股份有限公司 发光二极管封装结构及其制造方法
CN102130115B (zh) * 2010-01-18 2013-03-13 海洋王照明科技股份有限公司 白光led平面光源装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102317680A (zh) * 2009-03-10 2012-01-11 株式会社纳沛斯Led 灯罩及使用该灯罩的led灯
CN102034916A (zh) * 2009-09-29 2011-04-27 三垦电气株式会社 半导体发光装置、半导体发光模块及照明装置
CN102130115B (zh) * 2010-01-18 2013-03-13 海洋王照明科技股份有限公司 白光led平面光源装置
CN102142514A (zh) * 2010-01-28 2011-08-03 海洋王照明科技股份有限公司 一种led发光板及其制备方法
CN102543980A (zh) * 2010-12-31 2012-07-04 矽品精密工业股份有限公司 发光二极管封装结构及其制造方法

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