CN2937155Y - Device for depositing eka-diamond membrane on aluminium surface - Google Patents
Device for depositing eka-diamond membrane on aluminium surface Download PDFInfo
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- CN2937155Y CN2937155Y CN 200620105862 CN200620105862U CN2937155Y CN 2937155 Y CN2937155 Y CN 2937155Y CN 200620105862 CN200620105862 CN 200620105862 CN 200620105862 U CN200620105862 U CN 200620105862U CN 2937155 Y CN2937155 Y CN 2937155Y
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Abstract
The utility model discloses a device used for sedimentary diamond film on the surface of aluminum material, which comprises a reaction room made of insulation material. The reaction room is communicated with air supply system and vacuum system of chemistry deposit. The enclosure formed by ceramics and two pieces of paralleled electrodes are positioned in the reaction room, wherein the upper electrode is in the enclosure and bottom end adhered to the bottom surface of enclosure, the upper end is connected with plasma excitation pulse power supply; the lower electrode is grounded and fixed onto the outside heater of enclosure. The heater is connected with the temperature-adjusting device, and the adjusting screw is arranged at bottom of the heater, which can be used to adjust the distance between two electrodes. Nozzle of air supply pipe is arranged between two paralleled electrodes. The utility model has simple structure, and easy operation. The sedimentary diamond film can be coated to the surface of aluminum material by using the utility model, then the surface hardness, anti-corrosion character and electrical insulating property of the AI/DLC composite can be greatly increased. Meantime the reaction speed is rapid and DFT can achieve to 4 to 6 Mum.
Description
Technical field
The utility model relates to the device that is used for the aluminium material surface diamond-film-like deposition.
Background technology
Aluminum alloy materials with its light weight, cheaply in industry, obtained widespread use.Yet the chemically reactive of aluminium is higher, and the aluminum alloy casting surface is corroded easily and goes mouldy.In addition, the aluminium material surface is soft, and mechanical property is relatively poor.Although can adopt chemical oxidation to generate the way of alumina protective layer, actual effect is not good.
Diamond like carbon film (DLC) has performances such as high-insulativity, high thermal conductivity, high-wearing feature, strong corrosion resistant and good air-tightness, is ideal protecting function film.Yet, yet there are no the report of depositing diamond-like film (DLC) on aluminium substrate so far.
Summary of the invention
The purpose of this utility model is for improving aluminium material surface hardness, erosion resistance and electrical insulating property, the device that is used for the aluminium material surface diamond-film-like deposition that a kind of technology is simple, cost is low being provided.
The device that is used for the aluminium material surface diamond-film-like deposition of the present utility model, comprise reaction chamber made of insulating material, reaction chamber is connected with the airing system and the vacuum system of chemical vapour deposition, in reaction chamber, be provided with the enclosed chamber and parallel electrode about in the of two that surround by pottery, wherein top electrode is arranged in enclosed chamber, its lower surface is close to the base plate face of enclosed chamber, top electrode links to each other with the plasma exciatiaon pulse power, lower electrode ground connection also is fixed on the outer well heater of enclosed chamber, well heater links to each other with reaction chamber heating temperature control device outward, be equipped with in the bottom of well heater and be used for regulating, the screw rod of following two interelectrode distances, the nozzle of air-supply duct is positioned between two parallel poles.
The frequency 1.2-2.0kHz of the plasma exciatiaon pulse power in the said apparatus, voltage 5-20kV, pulsed voltage positive rise＜1 μ s.
Use device of the present utility model at the aluminium material surface diamond-film-like deposition, its step is as follows:
1) clean aluminium: aluminium was soaked 10-30 minute at 60 ℃ of 0.5% dilute hydrochloric acid, after the rinsed with deionized water in ethanol ultrasonic oscillation handle, rinsed with deionized water is soaked in the acetone soln stand-byly, said aluminium is fine aluminium or aluminium alloy;
2) aluminium with cleaning is a substrate, is placed in the reaction chamber of device, and is fixed on the surface of lower electrode, is evacuated to base vacuum 3 * 10
-3Pa feeds pure argon and hydrogen, and substrate is heated to 50～250 ℃, opens the plasma exciatiaon pulse power and produces the plasma bombardment substrate, to remove substrate surface residual oxide layer and impurity;
3) feeding purity is 99.9% C
2H
4Gas, pilot-gas throughput ratio are Ar: H
2: C
2H
4=4: 0.5-1.5: 0.1-0.5, adjust reaction pressure to 100-500Pa, adjust frequency 1.2-2.0kHz, the voltage 5-20kV of the plasma exciatiaon pulse power, upper/lower electrode spacing 5-15mm, depositing diamond-like film.
Apparatus structure of the present utility model is simple, easy to use, use this device and can be implemented in inexpensive aluminium material surface coating quasi-diamond (DLC) film of light weight, improved the over-all propertieies such as surface hardness, erosion resistance and electrical insulating property of Al/DLC matrix material greatly.And film forming speed fast (can reach 1.0-1.7 μ m/h) makes thick film (thickness maximum can reach 4-6 μ m and do not come off) easily, and the film base is in conjunction with firmly.
Description of drawings
Fig. 1 is the device synoptic diagram that is used for the aluminium material surface diamond-film-like deposition.
Embodiment
With reference to Fig. 1, the device that is used for the aluminium material surface diamond-film-like deposition of the present utility model, comprise insulating matter (as: insulating pottery or silica glass material) reaction chamber 8, reaction chamber 8 is connected with the airing system 1 and the vacuum system 2 of chemical vapour deposition, in reaction chamber, be provided with the enclosed chamber 6 and parallel electrode about in the of two that surround by pottery, wherein top electrode 4 is arranged in enclosed chamber 6, to avoid " creepage " phenomenon.The lower surface of top electrode 4 is close to the base plate face of enclosed chamber 6, and for the energy state that makes dielectric barrier discharge is controlled in the preferred range, the thickness that generally makes the enclosed chamber base plate is 1-2mm.Top electrode links to each other with the plasma exciatiaon pulse power 3, the frequency 1.2-2.0kHz of this excitation pulse power supply, voltage 5-20kV, pulsed voltage positive rise＜1 μ s.Lower electrode 5 ground connection also are fixed on enclosed chamber 6 well heater 9 outward, well heater 9 links to each other with reaction chamber 8 heating temperature control device 10 outward, in the bottom of well heater 9 screw rod 11 that is used to regulate upper and lower two interelectrode distances is installed, the nozzle 7 of air-supply duct is positioned between two parallel poles.Upper and lower two electrodes can be stainless steel electrodes, and aluminium substrate 12 is fixed on the surface of lower electrode 5, and the zone forms the plasma reaction precursor for reaction film forming district between two electrodes under the effect of plasma exciatiaon source.
Utilize said apparatus, at aluminium material surface depositing diamond-like film.
The fine aluminium sheet is cleaned through following steps: 60 ℃ of 0.5% dilute hydrochloric acid soaked 30 minutes, and rinsed with deionized water is soaked in the ethanol and handled 20 minutes through ultrasonic oscillation, and rinsed with deionized water is soaked in the acetone soln stand-by; The aluminium flake substrate of cleaning is fixed in lower electrode plate surface in the DBD-CVD reaction chamber, is evacuated to base vacuum 3 * 10
-3Pa feeds pure argon and hydrogen, and substrate is heated to 50 ℃, opens the DBD power supply and produces the plasma bombardment substrate 20 minutes, removes residual oxide layer and impurity with the clean surface; Feed 99.9% high-purity C
2H
4Gas, pilot-gas throughput ratio are Ar: H
2: C
2H
4=4: 1: 0.1, adjust reaction pressure to 100Pa, adjust frequency 2.0kHz, the voltage 20kV of DBD power supply, upper/lower electrode spacing 5mm begins to deposit the DLC film.
Adopt aforesaid method at the aluminum surface deposition DLC film, through measuring and calculating, its sedimentation velocity is 0.8 μ m/h, the film base is in conjunction with firmly, Al/DLC composite material surface hardness 25GPa, frictional coefficient is less than 0.075 (under the atmosphere), resistivity 5 * 10
8Ω cm.The Al/DLC matrix material is immersed in 10% HF:HNO
3In the strong acid solution, through 28 ℃ of constant temperature 72 hours, film did not have and comes off, do not have corrosion.
The fine aluminium sheet is cleaned through following steps: 60 ℃ of 0.5% dilute hydrochloric acid soaked 10 minutes, and rinsed with deionized water is soaked in the ethanol and handled 30 minutes through ultrasonic oscillation, and rinsed with deionized water is soaked in the acetone soln stand-by; The aluminium flake substrate of cleaning is fixed in lower electrode plate surface in the DBD-CVD reaction chamber, is evacuated to base vacuum 3 * 10
-3Pa feeds pure argon and hydrogen, and substrate is heated to 50 ℃, opens the DBD power supply and produces the plasma bombardment substrate 20 minutes, removes residual oxide layer and impurity with the clean surface; Feed 99.9% high-purity C
2H
4Gas, pilot-gas throughput ratio are Ar: H
2: C
2H
4=4: adjust reaction pressure to 500Pa at 2: 0.5, adjust frequency 1.2kHz, the voltage 5kV of DBD power supply, upper/lower electrode spacing 15mm begins to deposit the DLC film.
Adopt aforesaid method at the aluminum surface deposition DLC film, through measuring and calculating, its sedimentation velocity is 1.7 μ m/h, the film base is in conjunction with firmly, Al/DLC composite material surface hardness 12GPa, frictional coefficient is less than 0.075 (under the atmosphere), resistivity 6 * 10
5Ω cm.The Al/DLC matrix material is immersed in 10% HF:HNO
3In the strong acid solution, through 28 ℃ of constant temperature 72 hours, film did not have and comes off, do not have corrosion.
Claims (3)
1. the device that is used for the aluminium material surface diamond-film-like deposition, it is characterized in that comprising reaction chamber made of insulating material (8), reaction chamber (8) is connected with the airing system (1) and the vacuum system (2) of chemical vapour deposition, in reaction chamber, be provided with the enclosed chamber (6) and parallel electrode about in the of two that surround by pottery, wherein top electrode (4) is arranged in enclosed chamber (6), its lower surface is close to the base plate face of enclosed chamber, top electrode (4) links to each other with the plasma exciatiaon pulse power (3), lower electrode (5) ground connection also is fixed on the outer well heater (9) of enclosed chamber (6), well heater (9) links to each other with reaction chamber (8) heating temperature control device (10) outward, be equipped with in the bottom of well heater (9) and be used for regulating, the screw rod (11) of following two interelectrode distances, the nozzle of air-supply duct (7) is positioned between two parallel poles.
2. the device that is used for the aluminium material surface diamond-film-like deposition according to claim 1 is characterized in that the thickness of enclosed chamber (6) base plate is 1-2mm.
3. the device that is used for the aluminium material surface diamond-film-like deposition according to claim 1 is characterized in that frequency 1.2-2.0kHz, the voltage 5-20kV of the plasma exciatiaon pulse power (3), pulsed voltage positive rise＜1 μ s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620105862 CN2937155Y (en) | 2006-07-20 | 2006-07-20 | Device for depositing eka-diamond membrane on aluminium surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620105862 CN2937155Y (en) | 2006-07-20 | 2006-07-20 | Device for depositing eka-diamond membrane on aluminium surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2937155Y true CN2937155Y (en) | 2007-08-22 |
Family
ID=38361178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620105862 Expired - Fee Related CN2937155Y (en) | 2006-07-20 | 2006-07-20 | Device for depositing eka-diamond membrane on aluminium surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2937155Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100453692C (en) * | 2006-07-20 | 2009-01-21 | 浙江大学 | Aluminium material surface modifying diamond-like film coating process and apparatus |
| CN102517547A (en) * | 2011-12-26 | 2012-06-27 | 长沙市岩田涂料科技有限公司 | Method for plating aluminum film or aluminum-tin alloy film on surface of continuous aluminum rolling plate in vacuum gas phase sedimentation method |
| CN103392218A (en) * | 2010-12-23 | 2013-11-13 | 六号元素有限公司 | A microwave plasma reactor for manufacturing synthetic diamond material |
| CN103956315A (en) * | 2014-05-22 | 2014-07-30 | 中国地质大学（北京） | Electrode spacing adjustable type ionic reaction chamber and electrode spacing adjusting device |
-
2006
- 2006-07-20 CN CN 200620105862 patent/CN2937155Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100453692C (en) * | 2006-07-20 | 2009-01-21 | 浙江大学 | Aluminium material surface modifying diamond-like film coating process and apparatus |
| CN103392218A (en) * | 2010-12-23 | 2013-11-13 | 六号元素有限公司 | A microwave plasma reactor for manufacturing synthetic diamond material |
| CN103392218B (en) * | 2010-12-23 | 2016-05-11 | 六号元素有限公司 | For the manufacture of the microwave plasma reactor of diamond synthesis material |
| CN102517547A (en) * | 2011-12-26 | 2012-06-27 | 长沙市岩田涂料科技有限公司 | Method for plating aluminum film or aluminum-tin alloy film on surface of continuous aluminum rolling plate in vacuum gas phase sedimentation method |
| CN103956315A (en) * | 2014-05-22 | 2014-07-30 | 中国地质大学（北京） | Electrode spacing adjustable type ionic reaction chamber and electrode spacing adjusting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070822 |