CN2842883Y - The cordless telephone high-frequency circuit - Google Patents
The cordless telephone high-frequency circuit Download PDFInfo
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- CN2842883Y CN2842883Y CNU2005201296199U CN200520129619U CN2842883Y CN 2842883 Y CN2842883 Y CN 2842883Y CN U2005201296199 U CNU2005201296199 U CN U2005201296199U CN 200520129619 U CN200520129619 U CN 200520129619U CN 2842883 Y CN2842883 Y CN 2842883Y
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Abstract
A kind of debugging, cordless telephone high-frequency circuit cheaply of exempting from comprises: emission data, voice signal amplifying circuit that the data sent here by low frequency part or speech are amplified; To the emission modulation oscillator circuit of modulating by the signal after emission data, the amplification of voice signal amplifying circuit; The transmitting power amplifying circuit that amplifies by the oscillator signal after the emission modulation oscillator circuit modulation; Transmission/reception duplexer; The preposition high-frequency amplifier circuit of the reception of amplifying to the received signal; With receive the local oscillation circuit mixing to carrying out the demodulated received demodulator circuit by receiving preposition high-frequency amplifier circuit amplifying signal, it comprises a FM receiving demodulation IC; Receive local oscillation circuit; To the data of coming out by the receiving demodulation circuit demodulation or voice signal amplifies and will amplify after data or the voice signal reception data, the voice signal amplifying circuit that are sent to low frequency part; The power supply decoupling circuit.
Description
Technical field
The present invention relates to a kind of high-frequency circuit, the high-frequency circuit of the cordless telephone of particularly a kind of full duplex radio transporting speech and data-signal.
Background technology
At present, known cordless telephone production difficult point mainly is the high-frequency circuit part, and the used high-frequency circuit of present known cordless telephone has three kinds:
1, the emission modulation oscillator circuit is formed by connecting by resistance, electric capacity, variable capacitance diode, crystal oscillator, middle week, triode, tranmitting frequency is amplified the employing multistage amplifier circuit, be formed by connecting by resistance, electric capacity, middle week, triode, receive preamplifying circuit and be formed by connecting by resistance, electric capacity, middle week, triode, receiving demodulation circuit is that MC3361 (or 5018) intermediate frequency IC is formed by connecting by resistance, electric capacity, 455KHZ intermediate-frequency filter, middle week, 455KHZ resonator (or middle week), crystal oscillator, model.Sort circuit exists produces the debugging complexity, and high to the production technology level requirement, production number and instrument and equipment are more, and tonequality is undesirable, the more high weak point of finished product integrated cost.
2, be that TB31224 (or Samsung 8528) modulation IC is formed by connecting by resistance, electric capacity, 455KHZ intermediate-frequency filter, 455KHZ resonator (or middle week), 10.7MHZ filter, crystal oscillator, middle week, triode, transmission/reception duplexer, Toshiba's model.Debugging was more when sort circuit exist to be produced, and production technology level is had relatively high expectations, and production number instrument and equipment is more, and main IC (model is TB31224 and 8528) price is higher and need weak points such as import, finished product integrated cost height.
3, be that 3600BM (or the similar IC of Fei Lipu) is formed by connecting by resistance, electric capacity, crystal oscillator, 455KHZ intermediate-frequency filter, 10.7MHZ filter, transmission/reception duplexer, voltage stabilizing didoe, storage IC model 2401, special U.S. model.Sort circuit exists when producing need write into storage IC with data with computer, production number instrument and equipment is more, production technology level is had relatively high expectations, and main IC (model is 3600 similar IC with Fei Lipu) price is high and need weak points such as import, finished product integrated cost height.
Summary of the invention
The object of the present invention is to provide a kind of low-cost cordless telephone high-frequency circuit of exempting to debug.Its structure comprises: emission data, voice signal amplifying circuit, and it amplifies data or the speech of being sent here by low frequency part; The emission modulation oscillator circuit, it is modulated the signal after being amplified by emission data, voice signal amplifying circuit; The transmitting power amplifying circuit, it is to being amplified by the oscillator signal after the modulation of emission modulation oscillator circuit; Transmission/reception duplexer; Receive preposition high-frequency amplifier circuit, it amplifies to the received signal; Receiving demodulation circuit, itself and the mixing of reception local oscillation circuit are to carrying out demodulation by receiving preposition high-frequency amplifier circuit amplifying signal, and it comprises a FM receiving demodulation IC; Receive local oscillation circuit; Receive data, voice signal amplifying circuit, it amplifies data or the voice signal that is come out by the receiving demodulation circuit demodulation, and the data after will amplifying or voice signal are sent to low frequency part; The power supply decoupling circuit.
Wherein, described FM receiving demodulation IC be the IC of China Huajing model is the FM receiving demodulation IC of CD9088CB, FM receiving demodulation IC that Hangzhou Silan's model is SC1088, Fei Lipu (PHILIPS) model is TDA7088T FM receiving demodulation IC one of them.
In above-mentioned cordless telephone high-frequency circuit, emission data, voice signal amplifying circuit are formed by connecting by resistance R 8, R13, R14, capacitor C 21, C22, triode Q5; The emission modulation oscillator circuit is formed by connecting by resistance R 11, R7, R5, R3, capacitor C 23～C26, variable capacitance diode VD1, crystal oscillator CR1, high-frequency triode Q6; The transmitting power amplifying circuit is formed by connecting by resistance R 2, capacitor C 27, C28, inductance L 4, high-frequency triode Q7; Receiving preposition high-frequency amplifier circuit is formed by connecting by resistance R 1, R6, capacitor C 4～C6, C8, inductance L 2, L3, band pass filter FL1, high-frequency triode Q1, Q2; Receiving demodulation circuit is formed by connecting by resistance R 4, capacitor C 9～C17, C32～C33, FM receiving demodulation IC; Receiving local oscillation circuit is formed by connecting by resistance R 12, R15, capacitor C 19, C20, inductance L 1, crystal oscillator CR2, high-frequency triode Q4; Reception data, voice signal amplifying circuit are formed by connecting by resistance R 9, R10, capacitor C 29～C31, triode Q3; Wherein the power supply decoupling circuit of the emission data in the radiating portion, voice signal amplifying circuit, emission modulation oscillator circuit, transmitting power amplifying circuit is made up of capacitor C 2, C3; The power supply decoupling circuit of the receiving demodulation circuit in the receiving unit, reception local oscillation circuit, reception data, voice signal amplifying circuit is made up of capacitor C 1, C18, C34; The power supply decoupling circuit that receives preposition high-frequency amplifier circuit is made up of resistance R 16, capacitor C 7.
Compared with prior art, beneficial effect of the present invention is: the carrier wave after the modulation has only used the one-level transmitting power to amplify; Data, the shared amplifier of voice signal amplify; Week, 455KHZ intermediate frequency filter, 455KHZ resonator in one of no use in the circuit; Circuit medium-high frequency IC is that homemade IC model is the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA7088T annotate: equal in enormous quantities operations for many years in broadcast receiver), does not need import and price very low; Be that the former reception local oscillation circuit of the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA7088T) is connected electric capacity, inductance by the IC internal circuit and constitutes and change external reception local oscillation circuit 7 into the OSC pin 5 of IC with model, improve the stability of circuit, also improved the voltage of signals amplitude that demodulation is come out; Under equal conditions, operating current is less, and the emission power output is bigger; During with the cordless telephone main frame, under the situation of giving connection to external call, can power by the telephone set outside line fully, and still can satisfy the phone standard-required; The cost of material is low for components and parts; Need not debug fully during production; Required production number, instrument and equipment are less; The less easy production of circuit element requires lower to production technology level; High frequency demodulation IC is without import and cheap; Operating voltage range wide and be low to moderate 1.8V still can operate as normal; Stable performance, the finished product integrated cost is low.
Description of drawings
Fig. 1 is an electrical schematic diagram of the present invention.
Fig. 2 is the circuit structure block diagram of the embodiment of the invention 1.
The pin explanation of FM receiving demodulation IC
The quiet output of MUTE V
IIFThe input of limiting amplifier intermediate frequency
V
OAFAudio frequency output C
LP2The low pass electric capacity of limiting amplifier
LOOP Audio Loop path filter V
IRFThe radio frequency input
V
PSupply voltage C
LIMAmplitude limiter bias voltage electric capacity
The OSC circuit GND ground that all shakes
IFFB intermediate frequency feedback C
APAll-pass filter electric capacity/frequency search
Input
C
LP1The low pass electric capacity TUNE electronic tuning of 1dB amplifier/automatic frequency control is defeated
Go out
V
OIFIntermediate frequency to external coupling capacitance is defeated
Go out
Embodiment
The technical solution adopted for the present invention to solve the technical problems is the FM receiving demodulation IC that the broadcast receiver field is used to be applied to the cordless telephone field use as the FM receiving demodulation; The FM receiving demodulation IC that particularly with model is CD9088CB (or SC1088 or TDA7088T) is applied on the cordless telephone.
Fig. 2 is an electrical schematic diagram of the present invention.Comprising emission data, voice signal amplifying circuit 1, emission modulation oscillator circuit 2, transmitting power amplifying circuit 3, transmission/reception duplexer 4, the preposition high-frequency amplifier circuit 5 of reception, receiving demodulation circuit 6, reception local oscillation circuit 7, reception data, voice signal amplifying circuit 8.Emission data, voice signal amplifying circuit 1 that data of being sent here by low frequency part or speech are formed by connecting by resistance, electric capacity, triode amplify; Signal after the amplification is coupled to the emission modulation oscillator circuit 2 that is formed by connecting by resistance, electric capacity, transfiguration two utmost points, crystal oscillator, high-frequency triode and modulates; Modulated oscillator signal is coupled to the one-level transmitting power amplifying circuit 3 that is formed by connecting by resistance, electric capacity, inductance, high-frequency triode and amplifies; Signal after the amplification is coupled to transmission/reception duplexer 4 and launches through antenna.Received signal is coupled to the preposition high-frequency amplifier circuit 5 of the reception that is formed by connecting by resistance, electric capacity, inductance, high-frequency triode, band pass filter by antenna through transmission/reception duplexer 4; It is the receiving demodulation circuit 6 that FM receiving demodulation IC, resistance, electric capacity, inductance, the high-frequency triode of CD9088CB (or the SC1088 of Hangzhou Silan or Philips TDA7088T) is formed by connecting that signal after the amplification is coupled to by the IC of China Huajing model, carry out demodulation by after receiving demodulation circuit 6 and reception local oscillation circuit 7 mixing that are formed by connecting by resistance, electric capacity, inductance, crystal oscillator, high-frequency triode, data that demodulation is come out or voice signal are coupled to the reception data, the speech amplifying circuit 8 that are linked by resistance, electric capacity, triode and amplify; Data or voice signal after the amplification are sent to low frequency part.
Fig. 1 constitutes example 1 of the present invention.Transmission/reception duplexer 4 is same as the prior art in the present embodiment.
Emission data, voice signal amplifying circuit 1 are formed by connecting by resistance R 8, R13, R14 capacitor C 21, C22 triode Q5; Emission modulation oscillator circuit 2 is formed by connecting by resistance R 11, R7, R5, R3 capacitor C 23～C26, variable capacitance diode VD1, crystal oscillator CR1, high-frequency triode Q6; Transmitting power amplifying circuit 3 is formed by connecting by resistance R 2, capacitor C 27, C28, inductance L 4, high-frequency triode Q7; Transmission/reception duplexer 4; Receiving preposition high-frequency amplifier circuit 5 is formed by connecting by resistance R 1, R6, capacitor C 4～C6, C8 inductance L 2, L3, band pass filter FL1, high-frequency triode Q1, Q2; Receiving demodulation circuit 6 is that the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA7088T) is formed by connecting by resistance R 4, capacitor C 9～C17, C32～C33, model; Receiving local oscillation circuit 7 is formed by connecting by resistance R 12, R15, capacitor C 19, C20, inductance L 1, crystal oscillator CR2, high-frequency triode Q4; Data after demodulating, speech amplifying circuit 8 are formed by connecting by resistance R 9, R10, capacitor C 29～C31, triode Q3.Wherein the power supply decoupling circuit of the emission data in the radiating portion, voice signal amplifying circuit 1, emission modulation oscillator circuit 2, transmitting power amplifying circuit 3 is made up of capacitor C 2, C3; The power supply decoupling circuit of the receiving demodulation circuit 6 in the receiving unit, reception local oscillation circuit 7, reception data, voice signal amplifying circuit 8 is made up of capacitor C 1, C18, C34; The power supply decoupling circuit that receives preposition high-frequency amplifier circuit 5 is made up of resistance R 16, capacitor C 7.
Emission data, voice signal amplifying circuit 1 are connected to the low frequency relevant portion by 2 ends of resistance R 14,1 end of resistance R 14 connects 2 ends of capacitor C 21,1 end of capacitor C 21 connects 2 ends of resistance R 13 and the B utmost point of triode Q5,1 end of resistance R 13 connects the C utmost point of triode Q5,1 end of resistance R 8,2 ends of capacitor C 22 respectively, the E utmost point of triode Q5 connects power-polar region GND, 2 ends of resistance R 8 connect the anodal TVDD of emission power, and 1 end of capacitor C 22 is connected to emission modulation oscillator circuit 2; Emission modulation oscillator circuit 2 connects power-polar region GND by 1 end of resistance R 11,2 ends of resistance R 11 connect 1 end of capacitor C 22 respectively, 1 end of capacitor C 23,1 end of variable capacitance diode VD1,2 ends of capacitor C 23 connect power-polar region GND, 2 ends of variable capacitance diode VD1 connect 1 end of crystal oscillator CR1 respectively, 1 end of resistance R 7,2 ends of resistance R 7 connect the anodal TVDD of emission power, 2 ends of crystal oscillator CR1 connect 1 end of resistance R 5 respectively, the B utmost point of high-frequency triode Q6,2 ends of capacitor C 25,2 ends of resistance R 5 connect the anodal TVDD of emission power, 2 ends of capacitor C 24 connect power-polar region GND, the C utmost point of high-frequency triode Q6 connects the anodal TVDD of emission power, the E utmost point of high-frequency triode Q6 connects 1 end of capacitor C 24 respectively, 1 end of capacitor C 25,2 ends of capacitor C 26,2 ends of resistance R 3,1 end of resistance R 3 connects power-polar region GND, and 1 end of capacitor C 26 is connected to transmitting power amplifying circuit 3; Transmitting power amplifying circuit 3 is connected 1 end of capacitor C 26 respectively by 1 end of resistance R 2, the B utmost point of high-frequency triode Q7,2 ends of resistance R 2 connect the anodal TVDD of emission power, the C utmost point of high-frequency triode Q7 connects 1 end of inductance L 4 respectively, 1 end of capacitor C 27,2 ends of capacitor C 28, the E utmost point of high-frequency triode connects power-polar region GND, 2 termination power negative pole ground GND of capacitor C 27,1 end of capacitor C 28 is connected to 2 ends of transmission/ reception duplexer 4,1 of transmission/ reception duplexer 4,4 pin all meet power-polar region GND, 3 pin of transmission/reception duplexer 4 connect antenna ANT, 5 ends of transmission/reception duplexer 4 connect 1 end of capacitor C 4,2 ends of capacitor C 4 are connected to and receive preposition high-frequency amplifier circuit 5, receive preposition high-frequency amplifier circuit 5 is connected capacitor C 4 respectively by the B utmost point of high-frequency triode Q1 2 ends, 1 end of resistance R 1, the C utmost point of high-frequency triode Q1 connects 1 end of inductance L 2 respectively, 2 ends of capacitor C 5,1 end of capacitor C 6, the E utmost point of high-frequency triode Q1 connects power-polar region GND, 1 pin of 2 end connecting band bandpass filter FL1 of capacitor C 6,2 of band pass filter FL1,3 pin all connect power-polar region GND, 4 pin of band pass filter FL1 connect 1 end of capacitor C 8,2 ends of capacitor C 8 connect 1 end of resistance R 6 respectively, the B utmost point of high-frequency triode Q2, the C utmost point of high-frequency triode Q2 connects 1 end of inductance L 3 respectively, 1 end of capacitor C 13, the E utmost point of high-frequency triode Q2 connects power-polar region GND, 2 ends of resistance R 16 connect reception positive source RVDD, 1 end of resistance R 16 connects 2 ends of inductance L 3 respectively, 2 ends of resistance R 6,1 end of capacitor C 7,1 end of capacitor C 5,2 ends of inductance L 2,2 ends of resistance R 1,2 ends of capacitor C 7 connect power-polar region GND, and 2 ends of capacitor C 13 are connected to receiving demodulation circuit 6; Receiving demodulation circuit 6 is FM receiving demodulation IC and the peripheral resistance thereof of CD9088CB (or SC1088 or TDA7088T) by model, electric capacity is formed by connecting, the concrete connection is that model is 1 end that the MUTE pin 1 of the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA7088T) connects capacitor C 32, LOOP pin 3 connects 1 end of capacitor C 33, VP pin 4 connects reception positive source RVDD, IFFB pin 6 connects 1 end of capacitor C 17, CLP1 pin 7 connects 1 end of capacitor C 16, VOIF pin 8 connects 2 ends of capacitor C 17 respectively, 1 end of capacitor C 15, VIIF pin 9 connects 2 ends of capacitor C 15, CLP2 pin 10 connects 2 ends of capacitor C 14, VIRF pin 11 connects 2 ends of capacitor C 13, VIRF pin 12 connects 2 ends of capacitor C 12, CLIM pin 13 connects 2 ends of capacitor C 11, GND pin 14 connects power-polar region GND, CAP pin 15 connects 2 ends of capacitor C 10, TUNE pin 16 connects 2 ends of capacitor C 9,1 end of capacitor C 9,1 end of capacitor C 10,1 end of capacitor C 11,1 end of capacitor C 12,1 end of capacitor C 14,2 ends of capacitor C 16,2 ends of capacitor C 33,2 ends of capacitor C 32 all connect the anodal RVDD that receives power supply, and model is that the OSC pin 5 of the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA1088T) is connected to reception local oscillation circuit 7; Receive local oscillation circuit 7 is connected capacitor C 20 respectively by 2 ends of crystal oscillator CR2 1 end, 1 end of inductance L 1, model is the OSC pin 5 of the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA7088T), 1 end of crystal oscillator CR2 connects 1 end of resistance R 12 respectively, the B utmost point of high-frequency triode Q4,1 end of capacitor C 19 connects power-polar region GND, the C utmost point of high-frequency triode Q4,2 ends of resistance R 12,2 ends of inductance L 1 all connect the anodal RVDD that receives power supply, the E of high-frequency triode Q4 connects 2 ends of capacitor C 19 respectively, 2 ends of resistance R 15,1 end of resistance R 15,1 end of capacitor C 19,2 ends of capacitor C 20 all connect power-polar region GND; Model is that the VOAF pin 2 of the FM receiving demodulation IC of CD9088CB (or SC1088 or TDA7088T) connects 2 ends of resistance R 4,2 ends of capacitor C 31 respectively, and 1 end of resistance R 4 connects power-polar region GND; 1 end of capacitor C 31 connects the reception data, voice signal amplifying circuit 8, receive data, voice signal amplifying circuit 8 is connected 1 end of capacitor C 31 respectively by the B utmost point of triode Q3,1 end of capacitor C 30,1 end of resistance R 10, the C utmost point of triode Q3 connects 2 ends of resistance R 10 respectively, 2 ends of capacitor C 30,1 end of resistance R 9,1 end of capacitor C 29 and low frequency relevant portion, the E utmost point of triode Q3,2 ends of capacitor C 29 all connect power-polar region GND, 1 end of capacitor C 18,1 end of capacitor C 1,1 end of capacitor C 34 all connects reception positive source RVDD, 2 ends of capacitor C 18,2 ends of capacitor C 1,2 ends of capacitor C 34 all connect power-polar region GND; 1 end of capacitor C 2,1 end of capacitor C 3 all connect the anodal TVDD of emission power, and 2 ends of capacitor C 2,2 ends of capacitor C 3 all connect power-polar region GND.
Operation principle of the present invention is as follows:
The present invention is during as the master of cordless telephone, mobile phone high-frequency circuit, sending data or voice signal to emission data of the present invention, the voice signal amplifying circuit 1 of main frame here by the main frame low frequency part amplifies, data after the amplification, voice signal are modulated through being capacitively coupled to emission modulation oscillator circuit 2, modulated oscillation frequency signal amplifies through being capacitively coupled to transmitting power amplifying circuit 3, and the carrier signal of amplification is transmitted to mobile phone through being capacitively coupled to transmission/reception duplexer 4 through master machine antenna.Receiving preposition high-frequency amplifier circuit 5 through capacitive coupling again through the transmission/reception duplexer of the present invention 4 of mobile phone when antenna for mobile phone is received the signal of main frame emission amplifies, high-frequency signal after the amplification is through being capacitively coupled to receiving demodulation circuit 6, carry out demodulation by receiving demodulation circuit 6 and after receiving local oscillation circuit 7 mixing, data that demodulation is come out or voice signal receive data through being capacitively coupled to, voice signal amplifying circuit 8 amplifies, and the data of amplification or voice signal are coupled to the low frequency part of mobile phone.Sending data or voice signal to emission data of the present invention, the voice signal amplifying circuit 1 of mobile phone here by the mobile phone low frequency part amplifies, data after the amplification or speech are modulated through being capacitively coupled to emission modulation oscillator circuit 2, modulated oscillation frequency signal amplifies through being capacitively coupled to transmitting power amplifying circuit 3, and the carrier signal after the amplification is transmitted to main frame through being capacitively coupled to transmission/reception duplexer 4 through the mobile phone antenna.Transmission/reception duplexer of the present invention 4 through main frame when master machine antenna is received the signal of antenna for mobile phone emission amplifies through being capacitively coupled to the preposition high-frequency amplifier circuit 5 of reception again, high-frequency signal after the amplification is through being capacitively coupled to receiving demodulation circuit 6, carry out demodulation by receiving demodulation circuit 6 and after receiving local oscillation circuit 7 mixing, data that demodulation is come out or voice signal receive data through being capacitively coupled to, voice signal amplifying circuit 8 amplifies.Data after the amplification or voice signal are coupled to the low frequency part of main frame.
Claims (6)
1, a kind of cordless telephone high-frequency circuit is characterized in that, comprising:
Emission data, voice signal amplifying circuit, it amplifies data or the speech of being sent here by low frequency part;
The emission modulation oscillator circuit, it is modulated the signal after being amplified by emission data, voice signal amplifying circuit;
The transmitting power amplifying circuit, it is to being amplified by the oscillator signal after the modulation of emission modulation oscillator circuit;
Transmission/reception duplexer;
Receive preposition high-frequency amplifier circuit, it amplifies to the received signal;
Receiving demodulation circuit, itself and the mixing of reception local oscillation circuit are to carrying out demodulation by receiving preposition high-frequency amplifier circuit amplifying signal, and it comprises a FM receiving demodulation IC;
Receive local oscillation circuit;
Receive data, voice signal amplifying circuit, it amplifies data or the voice signal that is come out by the receiving demodulation circuit demodulation, and the data after will amplifying or voice signal are sent to low frequency part;
The power supply decoupling circuit.
According to the cordless telephone high-frequency circuit of claim 1, it is characterized in that 2, described FM receiving demodulation IC is that the IC of China Huajing model is the FM receiving demodulation IC of CD9088CB.
According to the cordless telephone high-frequency circuit of claim 1, it is characterized in that 3, described FM receiving demodulation IC is the FM receiving demodulation IC of SC1088 for Hangzhou Silan's model.
According to the cordless telephone high-frequency circuit of claim 1, it is characterized in that 4, described FM receiving demodulation IC is the FM receiving demodulation IC of TDA7088T for the PHILIPS model.
5, according to the described cordless telephone high-frequency circuit of any claim of claim 1 to 4, it is characterized in that,
Emission data, voice signal amplifying circuit are formed by connecting by resistance R 8, R13, R14, capacitor C 21, C22, triode Q5;
The emission modulation oscillator circuit is formed by connecting by resistance R 11, R7, R5, R3, capacitor C 23～C26, variable capacitance diode VD1, crystal oscillator CR1, high-frequency triode Q6;
The transmitting power amplifying circuit is formed by connecting by resistance R 2, capacitor C 27, C28, inductance L 4, high-frequency triode Q7;
Receiving preposition high-frequency amplifier circuit is formed by connecting by resistance R 1, R6, capacitor C 4～C6, C8, inductance L 2, L3, band pass filter FL1, high-frequency triode Q1, Q2;
Receiving demodulation circuit is formed by connecting by resistance R 4, capacitor C 9～C17, C32～C33, FM receiving demodulation IC;
Receiving local oscillation circuit is formed by connecting by resistance R 12, R15, capacitor C 19, C20, inductance L 1, crystal oscillator CR2, high-frequency triode Q4;
Reception data, voice signal amplifying circuit are formed by connecting by resistance R 9, R10, capacitor C 29～C31, triode Q3;
Wherein the power supply decoupling circuit of the emission data in the radiating portion, voice signal amplifying circuit, emission modulation oscillator circuit, transmitting power amplifying circuit is made up of capacitor C 2, C3;
The power supply decoupling circuit of the receiving demodulation circuit in the receiving unit, reception local oscillation circuit, reception data, voice signal amplifying circuit is made up of capacitor C 1, C18, C34;
The power supply decoupling circuit that receives preposition high-frequency amplifier circuit is made up of resistance R 16, capacitor C 7.
6, according to the cordless telephone high-frequency circuit of claim 5, it is characterized in that,
Emission data, voice signal amplifying circuit are connected to the low frequency relevant portion by 2 ends of resistance R 14,1 end of resistance R 14 connects 2 ends of capacitor C 21,1 end of capacitor C 21 connects 2 ends of resistance R 13 and the B utmost point of triode Q5,1 end of resistance R 13 connects the C utmost point of triode Q5,1 end of resistance R 8,2 ends of capacitor C 22 respectively, the E utmost point of triode Q5 connects power-polar region GND, 2 ends of resistance R 8 connect the anodal TVDD of emission power, and 1 end of capacitor C 22 is connected to emission modulation oscillator circuit 2;
The emission modulation oscillator circuit connects power-polar region GND by 1 end of resistance R 11,2 ends of resistance R 11 connect 1 end of capacitor C 22 respectively, 1 end of capacitor C 23,1 end of variable capacitance diode VD1,2 ends of capacitor C 23 connect power-polar region GND, 2 ends of variable capacitance diode VD1 connect 1 end of crystal oscillator CR1 respectively, 1 end of resistance R 7,2 ends of resistance R 7 connect the anodal TVDD of emission power, 2 ends of crystal oscillator CR1 connect 1 end of resistance R 5 respectively, the B utmost point of high-frequency triode Q6,2 ends of capacitor C 25,2 ends of resistance R 5 connect the anodal TVDD of emission power, 2 ends of capacitor C 24 connect power-polar region GND, the C utmost point of high-frequency triode Q6 connects the anodal TVDD of emission power, the E utmost point of high-frequency triode Q6 connects 1 end of capacitor C 24 respectively, 1 end of capacitor C 25,2 ends of capacitor C 26,2 ends of resistance R 3,1 end of resistance R 3 connects power-polar region GND, and 1 end of capacitor C 26 is connected to transmitting power amplifying circuit 3;
The transmitting power amplifying circuit connects 1 end of capacitor C 26, the B utmost point of high-frequency triode Q7 respectively by 1 end of resistance R 2,2 ends of resistance R 2 connect the anodal TVDD of emission power, the C utmost point of high-frequency triode Q7 connects 1 end of inductance L 4,1 end of capacitor C 27,2 ends of capacitor C 28 respectively, the E utmost point of high-frequency triode connects power-polar region GND, 2 termination power negative pole ground of capacitor C 27,1 end of capacitor C 28 is connected to 2 ends of transmission/reception duplexer 4;
1,4 pin of transmission/reception duplexer all meet power-polar region GND, and 3 pin of transmission/reception duplexer 4 connect antenna ANT, and 5 ends of transmission/reception duplexer 4 connect 1 end of capacitor C 4, and 2 ends of capacitor C 4 are connected to and receive preposition high-frequency amplifier circuit 5;
Receive preposition high-frequency amplifier circuit is connected capacitor C 4 respectively by the B utmost point of high-frequency triode Q1 2 ends, 1 end of resistance R 1, the C utmost point of high-frequency triode Q1 connects 1 end of inductance L 2 respectively, 2 ends of capacitor C 5,1 end of capacitor C 6, the E utmost point of high-frequency triode Q1 connects power-polar region GND, 1 pin of 2 end connecting band bandpass filter FL1 of capacitor C 6,2 of band pass filter FL1,3 pin all connect power-polar region GND, 4 pin of band pass filter FL1 connect 1 end of capacitor C 8,2 ends of capacitor C 8 connect 1 end of resistance R 6 respectively, the B utmost point of high-frequency triode Q2, the C utmost point of high-frequency triode Q2 connects 1 end of inductance L 3 respectively, 1 end of capacitor C 13, the E utmost point of high-frequency triode Q2 connects power-polar region GND, 2 ends of resistance R 16 connect reception positive source RVDD, 1 end of resistance R 16 connects 2 ends of inductance L 3 respectively, 2 ends of resistance R 6,1 end of capacitor C 7,1 end of capacitor C 5,2 ends of inductance L 2,2 ends of resistance R 1,2 ends of capacitor C 7 connect power-polar region GND, and 2 ends of capacitor C 13 are connected to receiving demodulation circuit 6;
Receiving demodulation circuit is by FM receiving demodulation IC and peripheral resistance thereof, electric capacity is formed by connecting, concrete 1 end that connects the MUTE pin 1 connection capacitor C 32 that is FM receiving demodulation IC, LOOP pin 3 connects 1 end of capacitor C 33, VP pin 4 connects reception positive source RVDD, IFFB pin 6 connects 1 end of capacitor C 17, CLP1 pin 7 connects 1 end of capacitor C 16, VOIF pin 8 connects 2 ends of capacitor C 17 respectively, 1 end of capacitor C 15, VIIF pin 9 connects 2 ends of capacitor C 15, CLP2 pin 10 connects 2 ends of capacitor C 14, VIRF pin 11 connects 2 ends of capacitor C 13, VIRF pin 12 connects 2 ends of capacitor C 12, CLIM pin 13 connects 2 ends of capacitor C 11, GND pin 14 connects power-polar region GND, CAP pin 15 connects 2 ends of capacitor C 10, TUNE pin 16 connects 2 ends of capacitor C 9,1 end of capacitor C 9,1 end of capacitor C 10,1 end of capacitor C 11,1 end of capacitor C 12,1 end of capacitor C 14,2 ends of capacitor C 16,2 ends of capacitor C 33,2 ends of capacitor C 32 all connect the anodal RVDD that receives power supply, and the OSC pin 5 of FM receiving demodulation IC is connected to and receives local oscillation circuit 7;
Receive local oscillation circuit and connect 1 end of capacitor C 20,1 end of inductance L 1, the OSC pin 5 of FM receiving demodulation IC respectively by 2 ends of crystal oscillator CR2,1 end of crystal oscillator CR2 connects 1 end of resistance R 12, the B utmost point of high-frequency triode Q4 respectively, 1 end of capacitor C 19 connects power-polar region GND, 2 ends of the C utmost point of high-frequency triode Q4,2 ends of resistance R 12, inductance L 1 all connect the anodal RVDD that receives power supply, the E of high-frequency triode Q4 connects 2 ends of capacitor C 19,2 ends of resistance R 15 respectively, and 2 ends of 1 end of resistance R 15,1 end of capacitor C 19, capacitor C 20 all connect power-polar region GND; The VOAF pin 2 of FM receiving demodulation IC connects 2 ends of resistance R 4,2 ends of capacitor C 31 respectively, and 1 end of resistance R 4 connects power-polar region GND, and 1 end of capacitor C 31 connects reception data, voice signal amplifying circuit 8;
Receive data, the voice signal amplifying circuit is connected 1 end of capacitor C 31 respectively by the B utmost point of triode Q3,1 end of capacitor C 30,1 end of resistance R 10, the C utmost point of triode Q3 connects 2 ends of resistance R 10 respectively, 2 ends of capacitor C 30,1 end of resistance R 9,1 end of capacitor C 29 and low frequency relevant portion, the E utmost point of triode Q3,2 ends of capacitor C 29 all connect power-polar region GND, 1 end of capacitor C 18,1 end of capacitor C 1,1 end of capacitor C 34 all connects reception positive source RVDD, 2 ends of capacitor C 18,2 ends of capacitor C 1,2 ends of capacitor C 34 all connect power-polar region GND, 1 end of capacitor C 2,1 end of capacitor C 3 all connects the anodal TVDD of emission power, 2 ends of capacitor C 2,2 ends of capacitor C 3 all connect power-polar region GND.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005201296199U CN2842883Y (en) | 2005-10-28 | 2005-10-28 | The cordless telephone high-frequency circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005201296199U CN2842883Y (en) | 2005-10-28 | 2005-10-28 | The cordless telephone high-frequency circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2842883Y true CN2842883Y (en) | 2006-11-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2005201296199U Expired - Fee Related CN2842883Y (en) | 2005-10-28 | 2005-10-28 | The cordless telephone high-frequency circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2842883Y (en) |
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2005
- 2005-10-28 CN CNU2005201296199U patent/CN2842883Y/en not_active Expired - Fee Related
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