CN2824288Y - Precise casing for high power integrated gate electrode converting thyristor - Google Patents
Precise casing for high power integrated gate electrode converting thyristor Download PDFInfo
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- CN2824288Y CN2824288Y CN 200520069907 CN200520069907U CN2824288Y CN 2824288 Y CN2824288 Y CN 2824288Y CN 200520069907 CN200520069907 CN 200520069907 CN 200520069907 U CN200520069907 U CN 200520069907U CN 2824288 Y CN2824288 Y CN 2824288Y
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- negative electrode
- ring
- shackle
- porcelain ring
- pole sheet
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Abstract
The utility model relates to the accurate shell of a kind of high-power integrated gate commutated thyristor, belongs to high-power semiconductor switch device technology field.It comprises anode shirt rim (1), upward porcelain ring (2), negative electrode copper billet (3), gate pole sheet (4), negative electrode are drawn ring (6), following porcelain ring (7) and negative electrode shackle (8), anode shirt rim (1), last porcelain ring (2), gate pole sheet (4), following porcelain ring (7), negative electrode shackle (8) and negative electrode are drawn the upper and lower superimposed concentric sealing-in of ring (6), and negative electrode copper billet (3) places following porcelain ring (7), negative electrode shackle (8) and the negative electrode of gate pole sheet (4) below to draw ring (6) center.The utility model sealing strength height, air-tightness is strong, the evenness height of electrode surface.Be specially adapted to high-power integrated gate commutated thyristor and make the sealing-in shell.
Description
Technical field:
The utility model relates to a kind of high-power integrated gate commutated thyristor, especially relates to the accurate shell of a kind of high-power integrated gate commutated thyristor.Belong to high-power semiconductor switch device technology field.
Background technology:
Along with the continuous progress of novel electric power electric device, exchange drive technology and obtained to use widely at world wide, wherein also comprise with high speed, heavy duty being the rapid rise of the railway interchange drive technology of sign.AC drive locomotive because have that single shaft power is big, adhesive performance good, convenient, the power factor (PF) advantages of higher of traction regeneration control, progressively replacing traditional friendship motivation car that direct transfers.Integrated gate commutated thyristor is a kind of high-power semiconductor switch device that grows up on the gate level turn-off thyristor technical foundation.It adopts advanced processing technologys such as ion injection, precision photolithography, plasma etching that transparent emitter, fly-wheel diode etc. are introduced thyristor structure, and, make device have the hard-drive characteristic by adopting the integral gate drive circuit to reduce the inductance that triggers the loop.So integrated gate commutated thyristor combines the thyristor on-state characteristic and the excellent transistor turn-off characteristic of excellence dexterously, has all low advantage of turn-on consumption and turn-off power loss concurrently.Thereby possess overall merits such as power capacity is big, loss is big, efficient is high, reliability is high, cost is low, have special advantages in fields such as high-power converters.High-power integrated gate commutated thyristor mainly is made up of three parts, i.e. integrated gate commutated thyristor chip, gate-drive unit and ceramic packaging shell.And traditional ceramic packaging shell is formed by the sealing-in of the flat envelope of the upper and lower superimposed employing of anode seal flange, ceramic ring and copper electrode.Its sealing strength is lower, and air-tightness is relatively poor, and the evenness of electrode surface is also relatively poor.It can only be applicable to the encapsulation of common thyristor, and is not suitable for the encapsulation of high-power integrated gate commutated thyristor.
Summary of the invention:
The purpose of this utility model is to overcome above-mentioned deficiency, and a kind of accurate shell that is applicable to high-power integrated gate commutated thyristor encapsulation is provided.
The purpose of this utility model is achieved in that the accurate shell of a kind of high-power integrated gate commutated thyristor, comprise the anode shirt rim, go up the porcelain ring, negative electrode copper billet, gate pole sheet, negative electrode draw ring, time porcelain ring and negative electrode shackle, anode shirt rim, last porcelain ring, gate pole sheet, following porcelain ring, negative electrode shackle and negative electrode are drawn the upper and lower superimposed concentric sealing-in of ring, and the negative electrode copper billet places following porcelain ring, negative electrode shackle and the negative electrode of gate pole sheet below to draw the ring center.
Adopt end envelope sealing structure between above-mentioned anode shirt rim and the last porcelain ring; Adopt the flat envelope sealing structure of upper and lower clamp between upper and lower porcelain ring and the gate pole sheet; Adopt end envelope sealing structure between following porcelain ring and the negative electrode shackle and between negative electrode shackle and the negative electrode copper billet, negative electrode shackle and negative electrode are drawn and are adopted the compensation sealing structure between the ring.
Because sealing-in aspect of the present utility model is many, adopts the combination of above-mentioned multiple low stress sealing structure can improve sealing strength, the evenness that increases air-tightness and improve electrode surface.Therefore, be specially adapted to high-power integrated gate commutated thyristor and make the sealing-in shell.
Description of drawings:
Fig. 1 is an outside drawing of the present utility model.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is the A-A cut-away view of Fig. 2.
Embodiment:
Referring to Fig. 1～3, the utility model is the accurate shell of a kind of high-power integrated gate commutated thyristor.Mainly drawing ring 6, following porcelain ring 7 and negative electrode shackle 8 by anode shirt rim 1, last porcelain ring 2, negative electrode copper billet 3, gate pole sheet 4, scolder 5, negative electrode forms.Anode shirt rim 1, last porcelain ring 2, gate pole sheet 4, following porcelain ring 7, negative electrode shackle 8 and negative electrode are drawn ring 6 upper and lower superimposed concentric sealing-ins.Negative electrode copper billet 3 places following porcelain ring 7, negative electrode shackle 8 and the negative electrode of gate pole sheet 4 belows to draw ring 6 centers.
Wherein adopt end envelope sealing structure between anode shirt rim 1 and the last porcelain ring 2; Adopt the flat envelope sealing structure of upper and lower clamp between upper and lower porcelain ring 2,7 and the gate pole sheet 4; Adopt end envelope sealing structure between following porcelain ring 7 and the negative electrode shackle 8 and between negative electrode shackle 8 and the negative electrode copper billet 3; Negative electrode shackle 8 and negative electrode are drawn and are adopted the compensation sealing structure between the ring 6.
Claims (2)
1, the accurate shell of a kind of high-power integrated gate commutated thyristor, it is characterized in that: comprise anode shirt rim (1), go up porcelain ring (2), negative electrode copper billet (3), gate pole sheet (4), negative electrode draw ring (6), time porcelain ring (7) and negative electrode shackle (8), anode shirt rim (1), last porcelain ring (2), gate pole sheet (4), following porcelain ring (7), negative electrode shackle (8) and negative electrode are drawn the upper and lower superimposed concentric sealing-in of ring (6), and negative electrode copper billet (3) places following porcelain ring (7), negative electrode shackle (8) and the negative electrode of gate pole sheet (4) below to draw ring (6) center.
2, the accurate shell of a kind of high-power integrated gate commutated thyristor according to claim 1 is characterized in that adopting between anode shirt rim (1) and the last porcelain ring (2) end envelope sealing structure; Adopt the flat envelope sealing structure of upper and lower clamp between upper and lower porcelain ring (2,7) and the gate pole sheet (4); Adopt end envelope sealing structure between following porcelain ring (7) and the negative electrode shackle (8) and between negative electrode shackle (8) and the negative electrode copper billet (3); Negative electrode shackle (8) and negative electrode are drawn and are adopted the compensation sealing structure between the ring (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520069907 CN2824288Y (en) | 2005-03-18 | 2005-03-18 | Precise casing for high power integrated gate electrode converting thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520069907 CN2824288Y (en) | 2005-03-18 | 2005-03-18 | Precise casing for high power integrated gate electrode converting thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2824288Y true CN2824288Y (en) | 2006-10-04 |
Family
ID=37033408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520069907 Expired - Lifetime CN2824288Y (en) | 2005-03-18 | 2005-03-18 | Precise casing for high power integrated gate electrode converting thyristor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2824288Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399237B (en) * | 2008-10-24 | 2010-06-02 | 江阴市赛英电子有限公司 | Rapid heat radiation ceramic case formed by full compression joint |
| CN101404273B (en) * | 2008-09-08 | 2010-06-09 | 株洲南车时代电气股份有限公司 | Semiconductor device |
| CN101877332A (en) * | 2010-06-13 | 2010-11-03 | 江阴市赛英电子有限公司 | Novel plate pressure welding type multichip packaging ceramic package |
| CN102738100A (en) * | 2012-06-14 | 2012-10-17 | 无锡天杨电子有限公司 | Positive tube holder for serial thyristors |
-
2005
- 2005-03-18 CN CN 200520069907 patent/CN2824288Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404273B (en) * | 2008-09-08 | 2010-06-09 | 株洲南车时代电气股份有限公司 | Semiconductor device |
| CN101399237B (en) * | 2008-10-24 | 2010-06-02 | 江阴市赛英电子有限公司 | Rapid heat radiation ceramic case formed by full compression joint |
| CN101877332A (en) * | 2010-06-13 | 2010-11-03 | 江阴市赛英电子有限公司 | Novel plate pressure welding type multichip packaging ceramic package |
| CN101877332B (en) * | 2010-06-13 | 2012-03-28 | 江阴市赛英电子有限公司 | Novel plate pressure welding type multichip packaging ceramic package |
| CN102738100A (en) * | 2012-06-14 | 2012-10-17 | 无锡天杨电子有限公司 | Positive tube holder for serial thyristors |
| CN102738100B (en) * | 2012-06-14 | 2014-09-17 | 无锡天杨电子有限公司 | Positive tube holder for serial thyristors |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20150318 Granted publication date: 20061004 |