CN2819631Y - Brushless controller of electric vehicle - Google Patents
Brushless controller of electric vehicle Download PDFInfo
- Publication number
- CN2819631Y CN2819631Y CNU200520027439XU CN200520027439U CN2819631Y CN 2819631 Y CN2819631 Y CN 2819631Y CN U200520027439X U CNU200520027439X U CN U200520027439XU CN 200520027439 U CN200520027439 U CN 200520027439U CN 2819631 Y CN2819631 Y CN 2819631Y
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Abstract
The utility model belongs to a kind of electric vehicle brushless controller of electric automobiles.The different bleed offs loop that the drive circuit of the metal-oxide-semiconductor of the N raceway groove of setting out on a journey adopts different electric capacity with and acceleration and protective circuit.The drive circuit of setting out on a journey of the utility model driven MOS pipe has confirmed its high reliability and good effect by actual test and a large amount of practice.Its metal-oxide-semiconductor of setting out on a journey is opened about 100 μ S, and damping ratio is about 1.1-1.2; The shut-in time of metal-oxide-semiconductor 50 μ s that only have an appointment, and the existence of voltage-stabiliser tube guaranteed to be added in the safe range of the voltage on the power tube, and even lay a good foundation for the normal steady operation of power tube system.
Description
Technical field
The utility model belongs to electric automobiles, especially a kind of electric vehicle brushless controller.
Background technology
The controller of electric motor car is the important control parts of electric motor car.Controller is made of control circuit, drive circuit, power circuit, and drive circuit is the driving to metal-oxide-semiconductor, and the design level of its drive circuit is directly connected to the performance quality of electric motor car.At present, adopt existing processes make the P channel MOS tube also do not resemble make the N-channel MOS pipe ripe, so tens amperes the metal-oxide-semiconductor that electric bicycle is suitable for can only be with the metal-oxide-semiconductor of N raceway groove.This corresponding driving problems that the N-channel MOS pipe also just occurs.Come into vogue on the market and electric vehicle motor that also represent direction is a brushless electric machine now, driving to brushless electric machine needs six metal-oxide-semiconductors, the drive circuit of following road metal-oxide-semiconductor is comparatively ripe, the quality of brushless controller performance and the relation of its design of drive circuit are very big, the design of the driving of the power tube of especially setting out on a journey.But the drive circuit ubiquity following problems of setting out on a journey of present common controller:
1. set out on a journey drive circuit driving force too a little less than, the time that the metal-oxide-semiconductor of setting out on a journey is opened need is oversize.The loss of metal-oxide-semiconductor is increased, and heating increases, even burns power tube.
2. set out on a journey drive circuit the cascading water ability too a little less than, the metal-oxide-semiconductor of setting out on a journey can not be closed when closing timely being badly in need of, thereby fatal power supply instantaneous short-circuit phenomenon may occur, consequence is extremely serious.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, provides a kind of to the set out on a journey improvement design of drive circuit of controller metal-oxide-semiconductor, realizes the very short electric vehicle brushless controller of response time that metal-oxide-semiconductor is opened and closed.
The utility model solves its technical problem and takes following technical scheme to realize:
This electric vehicle brushless controller, the drive circuit of setting out on a journey of its metal-oxide-semiconductor connects output plug and metal-oxide-semiconductor respectively, this drive circuit of setting out on a journey is by storage battery power supply, it is characterized in that: the formation to the drive circuit of setting out on a journey of metal-oxide-semiconductor of brushless controller is such: the 12V supply power voltage connects the base stage of triode Q3, the emitter of triode Q3 is exported X-T mutually by one in the three-phase of resistance R 5 connection output plugs, the collector electrode of triode Q3 connects high pressure HV output node by resistance R 3 and connects the base stage of triode Q2 simultaneously, the emitter of triode Q2 connects the HV output node by resistance R 4, the collector electrode of triode Q2 connects capacitor C 2 respectively, the base stage of the positive pole of diode D2 and triode Q1, the negative pole of diode D2 connects the grid G of MOSFET, the negative pole of diode D2 also connects the emitter of triode Q1, triode Q1 collector electrode connects capacitor C 2 by resistance R 1, resistance R 2 connects the source S of metal-oxide-semiconductor, voltage-stabiliser tube D1, capacitor C 2 connects the grid G and the source S of metal-oxide-semiconductor.
Advantage of the present utility model and beneficial effect are:
The drive circuit of setting out on a journey of driven MOS pipe has confirmed its high reliability and good effect by actual test and a large amount of practice.Its metal-oxide-semiconductor of setting out on a journey is opened about 100uS, and damping ratio is about 1.1-1.2; The shut-in time of the metal-oxide-semiconductor 50Us that only has an appointment, and the existence of voltage-stabiliser tube has guaranteed to be added in the safe range of the voltage on the power tube.
Description of drawings
Fig. 1 is a system circuit diagram of the present utility model;
Fig. 2 is the set out on a journey circuit diagram of drive circuit of metal-oxide-semiconductor of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model embodiment is further described:
This electric vehicle brushless controller, the following road drive circuit that comprises housing, power circuit, control circuit, metal-oxide-semiconductor is (owing to be prior art, do not improve, therefore the external form figure and the circuit that do not provide housing constitute, only be elaborated below) with regard to the drive circuit of setting out on a journey of improved metal-oxide-semiconductor, the drive circuit of setting out on a journey of its metal-oxide-semiconductor connects output plug and metal-oxide-semiconductor respectively, this drive circuit of setting out on a journey is by storage battery (12V) power supply, and the formation to the drive circuit of setting out on a journey of metal-oxide-semiconductor of brushless controller is such:
The 12V supply power voltage connects the base stage of triode Q3, the emitter of triode Q3 is exported X-T mutually by one in the three-phase of resistance R 5 connection output plugs, the collector electrode of triode Q3 connects high pressure HV output node by resistance R 3 and connects the base stage of triode Q2 simultaneously, the emitter of triode Q2 connects the HV output node by resistance R 4, the collector electrode of triode Q2 connects the base stage of positive pole and the triode Q1 of capacitor C 2, diode D2 respectively, the negative pole of diode D2 connects the grid G of MOSFET, the negative pole of diode D2 also connects the emitter of triode Q1, and Q1 plays discharge process; Triode Q1 collector electrode connects capacitor C 2 by resistance R 1, and resistance R 2 connects the source S of metal-oxide-semiconductor, and grid G and source S that voltage-stabiliser tube D1, capacitor C 2 connect metal-oxide-semiconductor shield.
The operation principle of the drive circuit of setting out on a journey of the present utility model is: the turn-on condition of metal-oxide-semiconductor is that GS voltage is greater than 10V, be used in when high-end and drop on the load two ends because of voltage, the source S of metal-oxide-semiconductor is near supply voltage, make the metal-oxide-semiconductor conducting must add voltage that a voltage makes GS in addition, but this voltage can not be greater than 18V greater than 10V.High pressure HV output node is for exceeding the high pressure of 12V than system power supply voltage, X is an ABC phase phase wherein, and X-T is the open-collector output signal of control circuit.When X-T was low level, the Q3 conducting had electric current to flow through among R5, the R3, and the last pressure drop of R3 is 1V, and Q2 saturation conduction, X-G are output as the high pressure approaching with HV, and MOSFET opens fully; When a certain moment, X-T was output as high resistant, Q3 ended, and Q2 ends, and Q1 opens, and MOSFET bleeds off GS interpolar electric charge by Q1, and capacitor C 2 quickened the process of this bleed off, impelled MOSFET to close rapidly.R1, R4 are current-limiting resistance, have guaranteed the reliability of system.D1 is the protection voltage-stabiliser tube, guarantees that the voltage that is added on the power tube is no more than a certain dangerous voltage.
Claims (1)
1. electric vehicle brushless controller, the drive circuit of setting out on a journey of its metal-oxide-semiconductor connects output plug and metal-oxide-semiconductor respectively, and this drive circuit of setting out on a journey be is characterized in that by storage battery power supply: the formation to the drive circuit of setting out on a journey of metal-oxide-semiconductor of brushless controller is such:
The 12V supply power voltage connects the base stage of triode Q3, the emitter of triode Q3 is exported X-T mutually by one in the three-phase of resistance R 5 connection output plugs, the collector electrode of triode Q3 connects high pressure HV output node by resistance R 3 and connects the base stage of triode Q2 simultaneously, the emitter of triode Q2 connects the HV output node by resistance R 4, the collector electrode of triode Q2 connects capacitor C 2 respectively, the base stage of the positive pole of diode D2 and triode Q1, the negative pole of diode D2 connects the grid G of MOSFET, the negative pole of diode D2 also connects the emitter of triode Q1, triode Q1 collector electrode connects capacitor C 2 by resistance R 1, resistance R 2 connects the source S of metal-oxide-semiconductor, voltage-stabiliser tube D1, capacitor C 2 connects the grid G and the source S of metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200520027439XU CN2819631Y (en) | 2005-09-22 | 2005-09-22 | Brushless controller of electric vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200520027439XU CN2819631Y (en) | 2005-09-22 | 2005-09-22 | Brushless controller of electric vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2819631Y true CN2819631Y (en) | 2006-09-20 |
Family
ID=37005692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200520027439XU Expired - Fee Related CN2819631Y (en) | 2005-09-22 | 2005-09-22 | Brushless controller of electric vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2819631Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101791969A (en) * | 2010-02-11 | 2010-08-04 | 天津市松正电动科技有限公司 | Electric control car controller |
-
2005
- 2005-09-22 CN CNU200520027439XU patent/CN2819631Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101791969A (en) * | 2010-02-11 | 2010-08-04 | 天津市松正电动科技有限公司 | Electric control car controller |
| CN101791969B (en) * | 2010-02-11 | 2012-07-18 | 天津市松正电动汽车技术股份有限公司 | Electric control car controller |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TIANJIN CITY SONGZHENG ELECTRIC TECHNOLOGY CO., L Free format text: FORMER OWNER: SONGZHENG ELECTRONIC CO., LTD., TIANJIN Effective date: 20081114 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20081114 Address after: No. 1 West ten Avenue, Tianjin Airport Logistics Processing Zone, postcode: 300308 Patentee after: Tianjin Santroll Electric Science & Technology Co., Ltd. Address before: No. seven, Jintang Road, Dongli District, Tianjin, China: 300300 Patentee before: Songzheng Electronics Co., Ltd., Tianjin City |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060920 Termination date: 20100922 |