CN2817283Y - Film colour electroluminescent display device - Google Patents

Abstract

The utility model discloses a film field colour electroluminescent display device, which is composed of a pixel unit composed of an optical transparent insulation substrate, X, Y direction electric conduction strip grids, a fluorescent powder layer and an insulation substrate, wherein the fluorescent powder layer is composed of blue powder, green powder and red powder. The X, Y direction conduction strip grids are respectively positioned at two outer sides of the fluorescent powder layer and the optical transparent insulation substrate is positioned outside the Y direction electric conduction strip grid. The insulation substrate is positioned outside the X direction electric conduction strip grid, a material layer with length electronic drift length thermal electron is arranged between the Y direction electric conduction strip gate and the fluorescent powder layer and the other material layer with the long electronic drift length thermal electron is arranged between the X direction electric conduction strip gate and the fluorescent powder layer. The utility model has the advantages of low voltage addressing, low capacity structure and low power consumption.

Description

Film electro-luminescent color display device

Technical field

The utility model relates to a kind of display device, relates in particular to a kind of thin film field and causes colorful light-emitting demonstration (TFEL) device.

Background technology

The advantage of traditional EL and TFEL display is the total solids device, does not resemble PDP and the FED device needs vacuum.The structure that traditional thin-film electroluminescent shows (TFEL) is as shown in Figure 1. and to be a kind of accurate symmetrical structure drive when showing when being applied to the higher electric pulse of ratio between directions X metal electrode 1 and the Y direction indium oxide electrode 5 accompanying the thin fluorescent material 3. of one deck between two insulating barriers 2 and 4 for it. and the electric field major part concentrates on phosphor powder layer 3 and makes the phosphor powder layer puncture and become conduction, this moment, the voltage that applies produced the abundant accelerated electron of very strong electric field in phosphor powder layer. and electronics is transferred to ion in the phosphor powder layer with energy, when electronics and ion compound tense just luminous. the drive characteristic of typical ZnS:Mn TFEL is as shown in Figure 2. the pulse among Fig. 2 is positive and negative. the driving voltage at the dielectric layer on the both sides of phosphor powder layer needs reduction, and traditional medium that is used in phosphor powder layer two Side among the TFELD for example is Ta ₂O ₅And BaTiO ₃. these materials have high dielectric constant, common dielectric constant greater than fluorescent material. on the interface between dielectric layer and the phosphor powder layer, there is not electronics to inject. but because the electric field strength of phosphor powder layer is very high, the big electric capacity that electronics in the phosphor powder layer is transmitted and dielectric layer is formed charges. because the number of electrons in phosphor powder layer is limited, the luminous efficiency of this process is lower. reason is in order to prevent fluorescent material self-absorption electronics, fluorescent material among the TFELD must have higher band gap (Eg＞3.5eV). as mentioned above, the shortcoming of TFEL is no matter adopt what what dielectric layer now, it requires than higher driving voltage as shown in Figure 2. and high driving voltage requires the IC device of expensive driving usefulness. and second shortcoming of traditional TFEL is that its high-k ε material causes very big electric capacity between metal and indium oxide electrode, because the charging of capacitor and the power loss of discharge are proportional to fCV ², f drives the frequency that shows, and C is an electric capacity, and V is a voltage. and because C is very big, when driving display panel, power consumption is also very big.

Summary of the invention

The utility model provides a kind of film electro-luminescent color display device with low electric capacity and low driving voltage demonstration.

The utility model adopts following technical scheme:

A kind of film electro-luminescent color display device, form by pixel cell, this pixel cell is by optically transparent insulated substrate 6, X, Y direction conduction strip grate 1,5, phosphor powder layer and insulated substrate 7 are formed, phosphor powder layer is by blue powder 2, green powder 3 and rouge and powder 4 are formed, X, Y direction conduction strip grate 1,5 lay respectively at two outsides of phosphor powder layer, optically transparent insulated substrate 6 is positioned at the outside of Y direction conduction strip grate 5, insulated substrate 7 is positioned at the outside of directions X electricity strip grate 1, between Y direction conduction strip grate 5 and phosphor powder layer, be provided with and have the thermionic material layer 9 of long electron drift length, between directions X conduction strip grate 1 and phosphor powder layer, be provided with another and have the thermionic material layer 8 of long electron drift length.

Compared with prior art, the utlity model has following advantage:

The utility model replaces the medium of phosphor powder layer two Side among traditional TFELD to have the thermionic material layer of long electron drift length, make the hot electron in the new material can be injected in the phosphor powder layer, thereby make the number of electrons in the phosphor powder layer increase, the performance that still keeps the hot electron generation simultaneously in the phosphor powder layer, luminous efficiency thereby increase. the utility model can adopt porous silicon (PPS) as having the thermionic material layer of long electron drift length, drift length in its crystal silicon is than much longer in the silico briquette. for this reason, porous silicon PPS is used for producing hot electron. and porous silicon becomes the activeleg that can quicken an electronics. and when applying voltage between metal electrode and indium oxide electrode, electronics just can be injected in the porous silicon PPS layer. and the field intensity in porous silicon PPS layer is several times as much as 10 ⁵V/cm. at this moment will produce the hot electron that is injected in the phosphor powder layer. the electronics that in other words produces a kind of ballistic is injected in the phosphor powder layer. produce the electronics of 200V, porous silicon PPS layer needs 4-5 μ m thickness .PPS layer thin more, and the voltage that applies is low more. and typical panel capacitance is 0.6-1nF/cm ². this is more much smaller than traditional film electro-luminescent color display device TFEL. and porous silicon PPS layer contains several microns polysilicon grains and nano silicon crystal.Phosphor powder layer can be much thinner than traditional TFEL, and for example 100-400nm. can use an electric charge injection layer if desired between indium oxide electrode and PPS layer. therefore, the utlity model has the low-voltage addressing, low capacitance structure, the advantage of low-power consumption.

Description of drawings

Fig. 1 is traditional TFEL structure sketch

Fig. 2 is the structural representation of the utility model pixel cell.

Fig. 3 is the brightness-voltage and the efficient-voltage characteristic of ZnS:Mn TFEL device.

Fig. 4 is the vertical view of pixel cell Y electrode.

Embodiment

Embodiment 1

A kind of film electro-luminescent color display device, form by pixel cell, this pixel cell is by optically transparent insulated substrate 6, X, Y direction conduction strip grate 1,5, phosphor powder layer and insulated substrate 7 are formed, phosphor powder layer is by blue powder 2, green powder 3 and rouge and powder 4 are formed, X, Y direction conduction strip grate 1,5 lay respectively at two outsides of phosphor powder layer, optically transparent insulated substrate 6 is positioned at the outside of Y direction conduction strip grate 5, insulated substrate 7 is positioned at the outside of directions X electricity strip grate 1, between Y direction conduction strip grate 5 and phosphor powder layer, be provided with and have the thermionic material layer 9 of long electron drift length, between directions X conduction strip grate 1 and phosphor powder layer, be provided with another and have the thermionic material layer 8 of long electron drift length, in the present embodiment, have the thermionic material layer 8 of long electron drift length and be porous silicon layer, between the bus of direction X conduction strip grate 1, be provided with insulation strip 11, its thickness is identical with conduction strip grate 1, between the bus of Y direction conduction strip grate 5, be provided with insulation strip 10, above-mentioned porous silicon can be by T.Komoda, SID ' 00Digest, the method for describing in 428 2000 prepares.Above-mentioned optically transparent insulated substrate 6 is a glass, the material selection indium oxide of optically transparent Y direction conduction strip grate 5, and it is 1800 ～2200 for a thickness, the insulated substrate in the present embodiment, insulation strip etc. all can adopt Al ₂O ₃, the thickness of porous silicon layer is 2200 ～2700 , and the thickness of phosphor powder layer is 5800 ～6200 , and the material of the directions X conduction strip grate 1 on insulated substrate 7 is Cr, and thickness is 1800 ～2200 .

Claims (3)

1, a kind of film electro-luminescent color display device, form by pixel cell, this pixel cell is by optically transparent insulated substrate (6), X, Y direction conduction strip grate (1,5), phosphor powder layer and insulated substrate (7) are formed, phosphor powder layer is by blue powder (2), green powder (3) and rouge and powder (4) are formed, X, Y direction conduction strip grate (1,5) lay respectively at two outsides of phosphor powder layer, optically transparent insulated substrate (6) is positioned at the outside of Y direction conduction strip grate (5), insulated substrate (7) is positioned at the outside of directions X electricity strip grate (1), it is characterized in that between Y direction conduction strip grate (5) and phosphor powder layer, being provided with and have the thermionic material layer of long electron drift length (9), between directions X conduction strip grate (1) and phosphor powder layer, be provided with another and have the thermionic material layer of long electron drift length (8).

2, film electro-luminescent color display device according to claim 1, it is characterized in that having the thermionic material layer of long electron drift length is porous silicon layer.

3, film electro-luminescent color display device according to claim 1 and 2 is characterized in that being provided with insulation strip (11) between the bus of direction X conduction strip grate (1), is provided with insulation strip (10) between the bus of Y direction conduction strip grate (5).

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