CN2810097Y

CN2810097Y - Metal based circuit carrier

Info

Publication number: CN2810097Y
Application number: CN 200520006241
Authority: CN
Inventors: 刘桥; 王忠良
Original assignee: Individual
Current assignee: Guizhou University
Priority date: 2005-07-28
Filing date: 2005-07-28
Publication date: 2006-08-23
Anticipated expiration: 2015-07-28

Abstract

The utility model discloses a metal based circuit carrier, which is composed of a metal base body, an insulating thin film layer and a composite metal layer, wherein the metal base body is a flat plate type metal base body made from metal material; the surface of the flat plate type metal base body is covered with the insulating thin film layer; the insulating thin film layer is provided with the composite metal layer which is used for making a circuit or welding components of the circuit. The utility model effectively solves the problem of insulation on the surface of the metal base body. The utility model which is adopted as a circuit carrier not only has the advantages of good heat radiation property, small volume and high mechanical strength, but also has the advantages of aging resistant, no organic volatile, convenient installation of engineering, etc.; the utility model can also be recovered to be reused, and thus, the pollution of electronic waste to environments is reduced.

Description

Metal-base circuit carrier

Technical field:

The utility model relates to a kind of metal-base circuit carrier that is used to make circuit and bearer circuit device, relates in particular to the metal-base circuit carrier of a kind of nanocomposite dielectric and compound circuit layer, belongs to the circuit carrier technical field.

Background technology:

At present, circuit carrier of the prior art generally all adopts plastics, bakelite or other insulating material to make, these adopt the circuit carrier (as the printed board circuit carrier) of insulating material making though have the advantage of good insulation preformance, exist the problem that volume is big, heat dispersion is poor, mechanical strength is lower.So existing circuit carrier in use, and its result of use still is not ideal enough.

Summary of the invention:

The purpose of this utility model is: provide a kind of perfect heat-dissipating, volume is less, mechanical strength is higher metal-base circuit carrier, to overcome the deficiencies in the prior art.

The utility model is to constitute like this: the flat metallic matrix (1) that this circuit carrier is made into by metal material, insulating thin layer (2) and complex metal layer are formed, on the single or double surface of flat metallic matrix (1), be coated with one deck insulating thin layer (2), on insulating thin layer (2), be provided with the complex metal layer that is used to make circuit or welding circuit components and parts.

On the single or double surface of flat metallic matrix (1), be coated with the insulating thin layer (2) of one deck nanocomposite dielectric material, and the film thickness of insulating thin layer (2) is not more than 30 microns.

Complex metal layer is formed by covering transition zone (3) insulating thin layer (2) surface and that be made by nickel or chromium metal material or nickel, chromium alloy material and being connected the surperficial conductive layer (4) of transition zone (3).

Complex metal layer is made up of with the conductive layer (4) that is connected with metalfilmresistor layer (5) the metalfilmresistor layer (5) that covers insulating thin layer (2) surface.

Complex metal layer by the transition zone (3) that covers insulating thin layer (2) surface and be connected on the transition zone (3) and form by the solderable layer (6) that Sn, Ag, Ni, Au material form.

Because having adopted technique scheme, the utility model to utilize metal is the carrier of Metal Substrate as circuit or microcircuit.Metal generally all is a good conductor, be as circuit or microcircuit carrier material, and the Insulation Problems on its Metal Substrate surface in the time of must solving circuit production or the circuit elements device is installed.In case the insulation isolating problem is resolved, sheet metal can be used as the carrier material of circuit or microcircuit making, can partly substitute traditional circuit carrier material like this, the integrated level of Circuits System equipment, the reserve capacity and the reliability of chip electronic component are improved greatly.And the utility model has solved the Insulation Problems on Metal Substrate surface effectively.Thin dielectric film material filming size of microcrystal of the present utility model is in nanometer scale (10 nanometer), about 10 microns～20 microns of thickness.In breakdown field strength 5 * 10 ⁴Under the condition of V/mm, the material surface insulation resistivity is greater than 10 ¹²Ω cm, surface withstand voltage intensity is 200～1000 volts, material breakdown electric field strength is greater than 10 ⁵V/mm.The utility model using plasma deposition techniques and electrochemical growth technology are in conjunction with the metal-oxide dielectric microparticle is produced on the metal surface, form thin dielectric film, this dielectric film with nanoscale particle diameter structure film forming and metal surface in conjunction with forming fine and close dielectric isolation layer, thereby constituted compound matrix material.The utility model is by a large amount of experiments, research and summary, suitable metal oxide materials and metal base have been selected, obtained the dielectric strength height, the insulating thin layer of the nanocomposite dielectric material of stable electrochemical property, and on insulating thin layer, produce complex metal layer, promptly at the plasma deposition of enterprising row metal conductive strips of insulating thin layer (lead) and metallic resistance band, electroplate thickening, with forming circuit sheet material, or to paste Copper Foil, the nichrome paper tinsel constitutes metal copper-clad plate and metallic resistance plate, be that available printing etching method is produced concrete circuit structure by instructions for use like this on metal-base circuit carrier of the present utility model, or constitute thick, film or SMT technology.

Therefore, the utility model compared with prior art, the utility model not only has perfect heat-dissipating, volume is less, mechanical strength is high advantage, and the utility model also has advantages such as anti-aging, no organic volatile, convenient engineering installation, and all right recycling of the utility model reduces the pollution of electronic waste to environment.

Description of drawings:

Accompanying drawing 1 is made up of transition zone and conductive layer for complex metal layer of the present utility model and insulating thin layer and the complex metal layer structural representation when being located at the metallic matrix single face;

Accompanying drawing 2 for complex metal layer of the present utility model by the metalfilmresistor layer with conductive layer is formed and insulating thin layer and the complex metal layer structural representation when being located at the metallic matrix single face;

Accompanying drawing 3 is made up of transition zone and solderable layer for complex metal layer of the present utility model and insulating thin layer and complex metal layer are located at the structural representation of metallic matrix when two-sided.

Embodiment:

Embodiment 1 of the present utility model: use aluminium, copper, iron, steel, titanium, molybdenum, nickel or aluminium alloy of the prior art, copper alloy, ferroalloy, titanium alloy, one kind of metallic sheet material such as molybdenum alloy or nickel alloy is as the material of metallic matrix (1), this piece metallic matrix (1) is carried out surfacing earlier to be ground, polishing, deoil etc. after the preliminary treatment, adopt low temperature electrochemical of the prior art or plasma method to go out layer of metal compound nano dielectric material layer as insulating thin layer (2) again in the surface preparation of metallic matrix (1), when the surface preparation metallic compound nano dielectric material layer that adopts the low temperature electrochemical method at metallic matrix (1), the low temperature electrochemical solution that is adopted is preparation Al, Ti, Ta, Ni, Cr, Si, the Zn element forms the solution of oxide, the film thickness of insulating thin layer (2) is controlled at is not more than 30 microns; Go up at insulating thin layer (2) then and make complex metal layer, complex metal layer is made up of transition zone (3) and conductive layer (4), during making, be material and adopt electroless plating method of the prior art or physical vaporous deposition is prepared one deck transition zone (3) on insulating thin layer (2) that with nickel, chromium or nickel, evanohm this transition zone (3) mainly is the adhesive force that is used for the dielectric surface of reinforced insulation thin layer (2); Making transition zone (3) afterwards, adopting traditional galvanoplastic or electroless plating method to produce one deck on transition zone (3) is the conductive layer (4) of conductive metallic material with copper or silver, also can adopt the bonding process of traditional hot pressing upward to paste one deck Copper Foil or silver foil as conductive layer (4), can make metal-base circuit carrier of the present utility model like this at transition zone (3).Can be during making according to the needs that use as stated above with insulating thin layer (2) and the complex metal layer that is used to make circuit or welding circuit components and parts be produced on the single or double of metallic matrix (1).When metal-base circuit carrier of the present utility model is used to make concrete application circuit, can adopt traditional printing etching method that the circuit that complex metal layer is made into practical application is got final product according to the needs that use.

Embodiment 2 of the present utility model: produce metallic matrix (1) and insulating thin layer (2) earlier by embodiment 1 described method, on insulating thin layer (2), produce the complex metal layer of forming by metalfilmresistor layer (5) and conductive layer (4) then, when making metalfilmresistor layer (5), can adopt conventional metalfilmresistor material and on the surface of insulating thin layer (2), produce layer of metal film resistive layer (5) by traditional electroless plating method or physical vaporous deposition, also can adopt the bonding process of traditional hot pressing to go up and paste one deck nichrome paper tinsel as metalfilmresistor layer (5) at insulating thin layer (2), and then on metalfilmresistor layer (5), produce one deck conductive layer (4) by embodiment 1 described method, can make another kind of metal-base circuit carrier of the present utility model like this.When using this metal-base circuit carrier, can be according to the needs that use, the requirement of adopting traditional distribution etch to use by reality is made into circuit practical application and that be provided with resistance with its complex metal layer and gets final product.

Embodiment 3 of the present utility model: produce metallic matrix (1) and insulating thin layer (2) earlier by embodiment 1 described method, on insulating thin layer (2), produce the complex metal layer of forming by transition zone (3) and solderable layer (6) then, its transition zone (3) can adopt the method for embodiment 1 to make, adopt traditional chemical plating then, electroplate, method such as plasma evaporation or sputter is made one deck Sn on the surface of transition zone (3), Ag, Ni or Au are the solderable layer (6) of material, can make another metal-base circuit carrier of the present utility model like this.When using this metal-base circuit carrier, can be according to the needs that use, the requirement of adopting traditional printing etching method to use by reality is made into circuit practical application and that be provided with solderable layer with its complex metal layer and gets final product.

Claims

1, a kind of metal-base circuit carrier, it is characterized in that: the flat metallic matrix (1) that this circuit carrier is made into by metal material, insulating thin layer (2) and complex metal layer are formed, on the single or double surface of flat metallic matrix (1), be coated with one deck insulating thin layer (2), on insulating thin layer (2), be provided with the complex metal layer that is used to make circuit or welding circuit components and parts.

2, metal-base circuit carrier according to claim 1, it is characterized in that: on the single or double surface of flat metallic matrix (1), be coated with the insulating thin layer (2) of one deck nanocomposite dielectric material, and the film thickness of insulating thin layer (2) is not more than 30 microns.

3, metal-base circuit carrier according to claim 1 is characterized in that: complex metal layer is formed by covering transition zone (3) insulating thin layer (2) surface and that be made by nickel or chromium metal material or nickel, chromium alloy material and being connected the surperficial conductive layer (4) of transition zone (3).

4, metal-base circuit carrier according to claim 1 is characterized in that: complex metal layer is made up of with the conductive layer (4) that is connected with metalfilmresistor layer (5) the metalfilmresistor layer (5) that covers insulating thin layer (2) surface.

5, metal-base circuit carrier according to claim 1 is characterized in that: complex metal layer by the transition zone (3) that covers insulating thin layer (2) surface and be connected on the transition zone (3) and form by the solderable layer (6) that Sn, Ag, Ni, Au material form.