CN2714088Y - Phototherapy device for treating face herpes and LED used therein - Google Patents
Phototherapy device for treating face herpes and LED used therein Download PDFInfo
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- CN2714088Y CN2714088Y CNU2003201317726U CN200320131772U CN2714088Y CN 2714088 Y CN2714088 Y CN 2714088Y CN U2003201317726 U CNU2003201317726 U CN U2003201317726U CN 200320131772 U CN200320131772 U CN 200320131772U CN 2714088 Y CN2714088 Y CN 2714088Y
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N5/0613—Apparatus adapted for a specific treatment
- A61N5/0616—Skin treatment other than tanning
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N2005/063—Radiation therapy using light comprising light transmitting means, e.g. optical fibres
- A61N2005/0631—Radiation therapy using light comprising light transmitting means, e.g. optical fibres using crystals
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N2005/065—Light sources therefor
- A61N2005/0651—Diodes
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Abstract
The utility model provides a phototherapy device for treating face herpes. A display device which can display the cumulate times of the irradiation of a solid state light source and the irradiation time of each time is arranged on the phototherapy device; a lens hood is arranged on the irradiating part. Thus, the phototherapy device for treating face herpes overcomes the existing defects of public known art. The phototherapy device for treating face herpes accurately controls therapy time, effectively controls the light dose for irradiating skin, raises therapeutic effect, meanwhile, does not damage skins, and can avoid eyes to be irradiated by unnecessary light rays; the irradiating part of the phototherapy device can be pressed in the skins, which further raises the therapeutic effect. An LED which is applied to the phototherapy device comprises a first crystal grain and a second crystal grain. The light rays of the first crystal grain and the crystal grain are mixed, and the light rays are homogeneously distributed; the LED can effectively decrease the quantity of heat generated by the crystal grains and raise the power of light generated by the crystal grains. Thereby, the phototherapy device for treating face herpes has better therapeutic effect.
Description
Technical field
This utility model relates to a kind of phototherapy device, and particularly a kind of phototherapy device that is applied to treat pimples is to be applied to the light emitting diode of this phototherapy device.
Background technology
Propiobacterium (propionibacterium acne) can be caused pimples, after the irradiate light with wavelength 400～450nm, the Triclosan bacillus, wherein with the light of wavelength 400～420nm to suppressing the best results of Propiobacterium, but the light of wavelength 400～450nm can make skin darkening (tanning) produce melanin, need accurately control various optical parameters (Optical parameter) when therefore utilizing wavelength 400～450nm treatment pimples, for example: the light dosage of irradiation, irradiation time etc.; Wavelength 450～630nm is also effective a little to suppressing Propiobacterium; The light tool of wavelength 630～890nm promotes wound healing and the effect of lowering wrinkle.
The patent of United States Patent (USP) US 5 549660 notification numbers is the light-emitting-diode therapeutic pimples that utilize HONGGUANG, but HONGGUANG is relatively poor than the inhibition effect of the Propiobacterium of position, deep to being positioned at skin, and its treatment time of while is longer, can increase the probability that skin scabs.
The patent of United States Patent (USP) US 6 641600 notification numbers, be to utilize fluorescent tube to send the light treatment pimples of 400～450nm and 589～659nm, but blood can absorb the light of a large amount of wavelength 400～450nm, therefore if can't be penetrated into skin than deep layer with the light of wavelength 400～450nm, cause its treatment time longer, can increase the probability that skin scabs.
The patent of Taiwan patent TW511514 notification number, be to utilize the blue light-emitting diode of 400～420nm and the red light-emitting diode treatment pimples of 640～890nm, its defective is, shadow surface more than 0.5～1 centimeter, just can reach blue, the mixed uniformly degree of HONGGUANG apart from dot matrix LEDs.
The patent of United States Patent (USP) US 2 0030216795A1 publication numbers be that to utilize wavelength be the Propiobacterium that the light of 400～450nm suppresses pimples, but the volume of this device is big, causes using inconvenient.
The patent of United States Patent (USP) US 5 968033 notification numbers, it is a kind of laser aid, it utilizes taper seat (coniform section) to press and touches (push-to-close-type switch) proximity switch, make proximity switch control laser, wherein this laser must focus on through (optical lens) eyeglass.
The patent of United States Patent (USP) US5360426 notification number is a kind of laser aid, and its utilization is arranged at pressure transducer (pressure sensor) the control laser of grip surface (outer surface of said holder).
The patent of Taiwan patent TW561896 notification number, be to utilize optical sensor to make light emitted light treatment skin and calculate treatment time, its shortcoming is that the light of wavelength 400～450nm can't be penetrated into the skin than deep layer, cause its treatment time longer, can increase the probability that skin scabs, though it has display panels to show irradiation time, can't show the accumulative frequency of irradiation, is its weak point.
The patent of United States Patent (USP) US 5 968033 notification numbers, it is a kind of phototherapy device, be that a ball-type eyeglass is set in a handle, light is transmitted to the ball-type eyeglass, utilize the ball-type eyeglass to be pressed into skin simultaneously, to improve the coupling efficiency of light and skin, one spring places ball-type eyeglass rear, utilize the extent control light of spring stress to be coupled into the dosage of skin, but its ball-type eyeglass can roll, face is rough shape simultaneously, therefore be not suitable for using on the face, particularly be used in nose or close eyes position, the skin of forehead is thinner simultaneously, therefore also is not suitable for being used in forehead.
EP0885629, utilize a kind of high brightness lamp source (flash lamp), utilize light pipe (lightguide) that light is transmitted to skin simultaneously, this light pipe front end is a convex end (a convex curved end), utilize this convex end that haemachrome (haemoglobin) is pressed from therapentic part, to improve the light penetration rate.
WO03028807 utilizes the columnar electrode (Cylindricalelectrode) of being located at front end (Tip end), utilizes this electrode and whether contacting of skin to control the light source of laser diode.
JP2003024458 is in probe front end (Tip of the probe) installing contact switch (Contactsensors), utilizes contact switch and contacting of skin to control the Push And Release of light source.
Summary of the invention
The technical problems to be solved in the utility model is: the phototherapy device of the preferable treatment pimples of a kind of tool effect is provided, utilizes irradiation portion to be pressed into skin, so that preferable therapeutic effect to be provided.
Another technical problem to be solved in the utility model is: a kind of phototherapy device for the treatment of pimples is provided, has a display device, can show the accumulative frequency of solid state light emitter irradiation, with the light dosage of control irradiation skin.
A technical problem more to be solved in the utility model is: a kind of phototherapy device for the treatment of pimples is provided, can avoids eyes to be subjected to the phototherapy device of irradiate light, utilize shade to select the light irradiated area, avoid eyes to be subjected to unnecessary irradiate light.
Another technical problem to be solved in the utility model is: a kind of light emitting diode for the treatment of pimples is provided, in the light-emitting diodes tube body first chip and second chip is set, to improve therapeutic effect.
A kind of phototherapy device that is applied to treat pimples of this utility model for this reason, wherein: described phototherapy device comprises:
One main body;
One irradiation portion is located at aforementioned body, and above-mentioned irradiation portion has the irradiation portion that wavelength can be treated pimples.
One can show that the display device of the accumulative frequency of above-mentioned irradiation portion irradiation is located at aforementioned body.
Aforesaid phototherapy device, buzzer is located at aforementioned body.
A kind of phototherapy device that is applied to treat pimples, described phototherapy device comprises:
One main body;
One irradiation portion is located at aforementioned body, and above-mentioned irradiation portion has the irradiation portion that wavelength can be treated pimples;
At least one flip flop equipment is located at aforementioned body.
Aforesaid phototherapy device, above-mentioned flip flop equipment is made up of limit switch.
Aforesaid phototherapy device, one can show that the display device of the accumulative frequency of above-mentioned irradiation portion irradiation is located at aforementioned body.
A kind of light emitting diode that is applied to the phototherapy device of above-mentioned treatment pimples comprises:
One light-emitting diodes tube body;
At least one first crystal grain, this first crystal grain is located at above-mentioned light-emitting diodes tube body, and above-mentioned first crystal grain is to have the crystal grain that wavelength can be treated pimples;
At least one second crystal grain, this second crystal grain is located at above-mentioned light-emitting diodes tube body.
The light emitting diode of the phototherapy device of aforesaid treatment pimples, described light emitting diode comprises:
One support radiating block is located at the light-emitting diodes tube body, and above-mentioned support radiating block is provided with a depressed part; Two bending supports, this bending support is extended by the radiating block both sides, the above-mentioned bending support that the thickness of above-mentioned support radiating block extends than both sides is thick, above-mentioned light-emitting diodes tube body envelope is established in conjunction with above-mentioned support radiating block and above-mentioned first crystal grain, and above-mentioned support radiating block bottom surface exposes to outside the above-mentioned light-emitting diodes tube body, and each above-mentioned bending support that extends of above-mentioned support radiating block both sides also extends and exposes outside the above-mentioned light-emitting diodes tube body.
The light emitting diode of the phototherapy device of aforesaid treatment pimples, described light emitting diode comprises:
First pin and second pin, described first pin, second pin are connected with above-mentioned first crystal grain;
One is set up between above-mentioned first pin, above-mentioned second pin, and the end face of above-mentioned support comprises above-mentioned first crystal grain, and above-mentioned support extends the outside of above-mentioned light-emitting diodes tube body.
A kind of phototherapy device that is applied to treat pimples comprises:
One main body;
One cover is located at aforementioned body, and the side of above-mentioned cover is a light non-transmittable layers, and its central authorities are photic zone;
One irradiation portion is located at the below of above-mentioned cover, and above-mentioned irradiation portion has the irradiation portion that wavelength can be treated pimples.
A kind of phototherapy device, it comprises:
One main body;
One irradiation portion is located at aforementioned body;
At least one flip flop equipment, above-mentioned flip flop equipment are located at the below of above-mentioned irradiation portion.
The phototherapy device of the treatment pimples that the utility model proposes is owing to be provided with the accumulative frequency that can show the solid state light emitter irradiation on the phototherapy device main body, and the display device of each irradiation time, thereby overcome the defective that known technology exists, in accurate control treatment time, when the light dosage of control irradiation skin improves curative effect effectively, injured skin not.Phototherapy device of the present utility model can be selected the irradiate light area by in irradiation portion shade being set, and can avoid eyes to be subjected to unnecessary irradiate light, and the irradiation portion of this phototherapy device can be pressed into skin, has further improved therapeutic effect.
The light emitting diode that is applied to above-mentioned phototherapy device that the utility model proposes, its main body comprises first crystal grain and second crystal grain, first crystal grain is formed with the preferable wavelength by different curative effects of second crystal grain, first crystal grain is mixed with the light of second crystal grain, make distribution of light more even, thereby improved therapeutical effect.And first crystal grain and second crystal grain make light emitting diode have the characteristic of high voltage low current, and the heat that can effectively reduce crystal grain and sent, and have improved the power of the light that crystal grain sends, and improve therapeutical effect.
Description of drawings
Fig. 1 is a stereo appearance figure of the present utility model;
Fig. 2 is a partial sectional view of the present utility model;
Fig. 3 is user mode figure of the present utility model;
Fig. 4 is that of the present utility model another implemented illustration;
Fig. 5 is that of the present utility model another implemented illustration;
Fig. 6 is that of the present utility model another implemented illustration;
Fig. 7 is that of the present utility model another implemented illustration;
Fig. 8 is that of the present utility model another implemented illustration;
Fig. 9 is that of the present utility model another implemented illustration;
Figure 10 is that of the present utility model another implemented illustration;
Figure 11 is that of the present utility model another implemented illustration;
Figure 12 is that of the present utility model another implemented illustration;
Figure 13 is that of the present utility model another implemented illustration;
Figure 14 is that of the present utility model another implemented illustration;
Figure 15 is that of the present utility model another implemented illustration;
Figure 16 is that of the present utility model another implemented illustration;
Figure 17 is that of the present utility model another implemented illustration;
Figure 18 is that of the present utility model another implemented illustration;
Figure 19 is that of the present utility model another implemented illustration;
Figure 20 is that of the present utility model another implemented illustration;
Figure 21 is that of the present utility model another implemented illustration;
Figure 22 is that of the present utility model another implemented illustration;
Figure 23 is that the light emitting diode of using in the phototherapy device of the present utility model is implemented illustration;
Figure 24 is that another light emitting diode of the present utility model is implemented illustration;
Figure 25 is that another light emitting diode of the present utility model is implemented illustration;
Figure 26 is that another light emitting diode of the present utility model is implemented illustration;
Figure 27 is the inhibition design sketch of wavelength of light to Propiobacterium;
Figure 28 is the spectral absorption figure that takes the oxygen haemachrome;
Figure 29 is the spectral absorption figure that takes oxygen haemachrome and haemachrome (hemoglobin).
The drawing reference numeral explanation
10,10 ', main body 11, opening 12, interior flanging 13, display device
131, accumulative frequency 132, irradiation time 14, switch 15, buzzer
20, irradiation portion 21, cover 211, stop section 22, circuit board
22 ', circuit board 221, perforation 222, lead 223, open-work
23, fin 231, radiating end 232, open-work 233, temperature sensor
24, light emitting diode 25, depression bar 251,251 ', positive stop end 252, elastic parts
253, elastomer 26, limit switch 27, nearly tipping put 28, the pressure module
30,30 ', cover 31,31 ', photic zone 32,32 ', 32 ", light non-transmittable layers
40, comedo 51, light-emitting diodes tube body 511, first crystal grain
512, second crystal grain 513, support radiating block 514,515, support 52, light-emitting diodes tube body
521, first crystal grain 522, second crystal grain 53, light-emitting diodes tube body 531, first crystal grain
532, second crystal grain 54, light-emitting diodes tube body 541, first crystal grain
542, second crystal grain 543, first pin 544, second pin 545, support
The specific embodiment
At first, please cooperate consult shown in Figure 1, preferred embodiment for this utility model phototherapy device structure, the irradiation portion 20 and one that comprise main body 10, is located at main body 10 front ends can be sheathed on the cover 30 of irradiation portion 20, the shape of main body 10 can be done any variation, for example: rectangle, circle, ellipse, but be not limited thereto.This main body 10 generally is the external form of a boots, Yu Yiduan is provided with an opening 11, these opening 11 peripheries are provided with interior flanging 12, be provided with the structure in order to control and demonstration such as a display device 13, a gauge tap 14 and a buzzer 15 in regular turn in other end side, display device 13 can show the irradiation number of times of solid state light emitter and the accumulative frequency of irradiation, cover 30 cooperates irradiation portion's 20 external forms and establishes, some is a photic zone 31 in the top, other parts then are light non-transmittable layers 32, utilize light non-transmittable layers 32 shield lights, avoid eyes to be subjected to unnecessary irradiate light.
Consult shown in Figure 2, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, and the below of described irradiation portion 20 is provided with flip flop equipment, and this flip flop equipment is made up of limit switch (tact switch) 26, limit switch 26 is preferably one, and limit switch 26 another preferred number are a plurality of.The shape of cover 21 front ends of described irradiation portion 20 is preferably convex, because convex is preferable to the pressurization effect of skin, what can arrange skin takes the oxygen haemachrome, but convex can produce sensation of pricking to the pressurization of skin, therefore another preferred shape of cover 21 front ends is the plane, to lower the sensation of pricking that the skin pressurization is produced, but be not limited thereto, cover 21 is preferable to be made up of transparent material, cover 21 necessary and contact skin, therefore cover 21 is preferable by forming with the biomedical material of skin compatibility, but is not limited thereto.One block edge 211, but block is in interior flanging 12 when making cover 21 be installed in the opening 11 of main body 10, to prevent that cover 21 from coming off, install a circuit board 22 in block edge 211 belows of cover 21 again, these circuit board 22 surfaces are provided with a perforation 221, insert for the radiating end 231 of being located at bottom surface one fin 23,, but be not limited thereto with raising solid state light emitter 24 radiating effects.Described solid state light emitter 24 is installed on the radiating end 231, and solid state light emitter 24 is connected in circuit board 22 surfaces, and fin 23 bottom surfaces connect downwards a limit switch 26, limit switch 26 be connected in another circuit board 22 '; Flip flop equipment starts solid state light emitter 24 emission light when irradiation portion pressure is touched skin.
24 fens light emitting diodes of solid state light emitter and laser diode.Light emitting diode, be the solid state light emitter (Solid State Light Source) of utilizing crystal grain luminous, light emitting diode divides resonant cavity light emitting diodes (Resonant Cavity Light Emitting Diode), polymer LED (Polymer LightEmitting Diodes), Organic Light Emitting Diode (Organic Light Emitting Devices again; OLEDs), conjugated polymer light emitting diode (Conjugated Polymer Light Emitting Diode), gold oxygen silicon LED types such as (Metal-Oxide-Silicon Light Emitting Diodes), solid state light emitter 24 can adopt E-POWER (to see also TW545699, TW558066), Luxeon Emitter (seeing also US6590235), any of tradition barrel shape LED, but be not limited thereto, the light emitting diode of wavelength 400～450nm wave band is subject to electrostatic influence, produce and damage, therefore a conducting ring can be set up in the light emitting diode periphery, to lower electrostatic interaction.
Laser diode, its emission wavelength expands to the purple light scope near infrared light, advantages such as the threshold current that the laser diode tool is extremely low, volume are gently little, its wavelength comprises the wavelength of tool curative effect, as: the light tool of wavelength 400～450nm wave band suppresses the effectiveness of Propiobacterium, and wavelength is that the light of 450～630nm suppresses Propiobacterium; The tool of 630～890nm wave band promotes the effect and the effect that lowers wrinkle of cell healing, so above-mentioned solid state light emitter 24 also can adopt laser diode.
Please cooperate and consult Fig. 2, shown in Figure 3, behind switch 14 these phototherapy devices of startup, directly press the comedo 40 that touches skin with irradiation portion 20 in use, after making fin 23 also press limit switch 26 simultaneously, make limit switch 26 conducting solid state light emitters 24, solid state light emitter 24 produces the comedo 40 of emission irradiate light skin, when solid state light emitter 24 irradiation skins arrive the scheduled time, buzzer 15 sends caution sound and reminds user, display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiate light, irradiation portion 20 directly presses and touches the degree of depth that skin can improve light penetration skin, the portion of irradiation simultaneously 20 presses and touches comedo 40, cause the thickness of comedo 40 to lower, can shine the Propiobacterium that is positioned at comedo 40 deep layers because of light, to improve therapeutic effect, can lower treatment time simultaneously, to reduce the probability that skin scabs, simultaneously can avoid skin because of shining too high light dosage blackening, and can reduce irradiation portion 20 and press the time of touching skin, avoid skin in compression power to produce the side effect of erythrosis, when irradiation portion 20 touches skin arrival predetermined pressure in pressure, solid state light emitter 24 is just launched irradiate light skin, can reduce the irradiate light probability that eyes are subjected to solid state light emitter 24, it is uncomfortable to avoid eyes to produce.
As shown in Figure 4, this cover 30 ' external form is more elongated kenel for forming the top undergauge, but be not limited thereto, when being used for the irradiation at positions such as nose, can avoid eyes to be subjected to unnecessary irradiate light, this cover 30 ' top some be photic zone 31 ', other parts then be light non-transmittable layers 32 ', utilize light non-transmittable layers 32 ' shield lights, avoid eyes to be subjected to unnecessary irradiate light.
As shown in Figure 5, be another embodiment of the present utility model, wherein, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is made up of limit switch 26, flip flop equipment is located at the below of irradiation portion 20, block edge 211 spaced apart segment distances of this circuit board 22 and cover 21, circuit board is fixed in main body 10 inwalls for 22 groups, this fin 23 is installed in solid state light emitter 24 belows, and solid state light emitter 24 and limit switch 26 all are installed on the circuit board 22, and cover 21 inner faces contact on the limit switch 26, by this, touch skin when cover 21 pressures, make limit switch 26 open solid state light emitters 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled times, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in Figure 6, be another embodiment of the present utility model, wherein, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is made up of limit switch 26, flip flop equipment is located at the below of irradiation portion 20, and solid state light emitter 24 is located on the opening 11, and this fin 23 is installed in solid state light emitter 24 belows, 23 ends of fin, contact on the limit switch 26, be connected with lead 222 between solid state light emitter 24 and the circuit board 22, by this, press when solid state light emitter 24 and to touch skin, make limit switch 26 open solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in Figure 7, be another embodiment of the present utility model, wherein, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is by depression bar 25, elastic parts 252 is put 27 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, block edge 211 spaced apart segment distances of circuit board 22 and fin 23 and cover 21, circuit board is fixed in main body 10 inwalls for 22 groups, circuit board 22 and fin 23 are provided with open-work 223,232, circuit board 22 is provided with solid state light emitter 24 and nearly tipping puts 27, depression bar 25 tops are extended downwards by cover 21 inner top surfaces, form a positive stop end 251 in depression bar 25 tops, the open-work 223 of circuit board 22 and fin 23 is passed in depression bar 25 bottoms, after 232, form another positive stop end 251 ' block in fin 23 bottom surfaces, be equipped with an elastic parts 252 between positive stop end 251 and circuit board 22 surfaces, by this, when cover 21 pressures are touched skin, making nearly tipping put 27 distances relative with cover 21 reduces, 27 senses skin are put in then near tipping, make nearly tipping put 27 and open solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
Described nearly tipping is put 27 and is divided into mechanical switch (Mechanical Switch) and proximity sense (Proximity Sensor), and it is described as follows:
Mechanical switch: mechanical switch utilizes the mode of the Push And Release of mechanical action to control solid state light emitter 24 current flowing, and mechanical switch is divided into press button, rocker switch, slide switch, spring-loaded button switch and limit switch or other utilizes the Push And Release mode of mechanical action to make the various switches of solid state light emitter 24 current flowing.
Proximity sense: proximity sense divides many types again, be respectively: capacitance-type switch, vortex flow switch, photoelectric switch and ultrasound switch, proximity sense comprises signal amplifier, for example: and darlington transistor (Darlington Transistor), but be not limited thereto.Photoelectric switch is to utilize light emitting diode and reception diode object sensing, for example but be not limited to photo interrupter (Photointerrupter) or other utilizes the sensing mode to control the various pick offs of solid state light emitter 24 current flowing.
As shown in Figure 8, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is by depression bar 25, elastic parts 252 is put 27 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, circuit board 22 and fin 23 are installed in block edge 211 belows of cover 21, depression bar 25 tops are extended downwards by fin 23 bottom surfaces, one positive stop end 251 is formed on depression bar 25 tops, depression bar 25 bottoms pass the below another circuit board 22 ' open-work 223, depression bar 25 form another positive stop end 251 ' blocks in circuit board 22 ' the bottom surface, between top positive stop end 251 and circuit board 22 ' surface, be equipped with an elastic parts 252 again, when cover 21 pressures are touched skin, elastic parts 252 produces and shrinks, and makes nearly tipping put 27 and reduces with fin 23 relative distances, makes nearly tipping put 27 inductions, then near tipping is put 27 and is opened solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in Figure 9, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is by depression bar 25, elastic parts 252 is put 27 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, solid state light emitter 24 is located on the opening 11, this fin 23 is installed in solid state light emitter 24 belows, circuit board 22 and the spaced apart segment distance in fin 23 bottom surfaces, circuit board is fixed in main body 10 inwalls for 22 groups, be equiped with depression bar 25 between solid state light emitter 24 and the circuit board 22, one positive stop end 251 is formed on depression bar 25 tops, depression bar 25 forms another positive stop end 251 ' block in the bottom surface of circuit board 22, depression bar 25 is to be equipped with elastic parts 252, solid state light emitter 24 is connected with lead 222 with circuit board 22, nearly tipping is put 27 and is installed in circuit board 22, when solid state light emitter 24 pressures are touched skin, elastic parts 252 produces and shrinks, making nearly tipping put 27 reduces with fin 23 relative distances, make nearly tipping put 27 inductions, then near tipping is put 27 and is opened solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 10, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is put 27 by elastic parts 252 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, solid state light emitter 24 is located on the opening 11, fin 23 is installed in solid state light emitter 24 belows, circuit board 22 and the spaced apart segment distance in fin 23 bottom surfaces, circuit board is fixed in main body 10 inwalls for 22 groups, 22 of solid state light emitter 24 and circuit boards are equiped with elastic parts 252, solid state light emitter 24 is connected with lead 222 with circuit board 22, be equiped with nearly tipping on the circuit board 22 and put 27, when solid state light emitter 24 pressures were touched skin, elastic parts 252 produced and shrinks, making nearly tipping put 27 reduces with fin 23 relative distances, make nearly tipping put 27 inductions, then near tipping is put 27 and is opened solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 11, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is put 27 by elastic parts 252 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, circuit board 22 and fin 23 are installed in block edge 211 belows of cover 21, circuit board 22 ' with the spaced apart segment distance in fin 23 bottom surfaces, circuit board 22 ' group is fixed in main body 10 inwalls, circuit board 22 and circuit board 22 ' between be equiped with elastic parts 252, circuit board 22 ' on be equiped with nearly tipping and put 27, when cover 21 pressures are touched skin, elastic parts 252 produces and shrinks, making nearly tipping put 27 reduces with fin 23 relative distances, make nearly tipping put 27 inductions, then near tipping is put 27 and is opened solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 12, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is put 27 by elastic parts 252 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, cover 21 1 sides are hubbed at interior flanging 12 belows, block edge 211 spaced apart segment distances of circuit board 22 and fin 23 and cover 21, circuit board is fixed in main body 10 inwalls for 22 groups, 211 installings of circuit board 22 1 sides and block edge, one elastic parts 252, be equiped with nearly tipping on the circuit board 22 and put 27, when cover 21 pressures are touched skin, elastic parts 252 produces and shrinks, making nearly tipping put 27 reduces with cover 21 relative distances, make nearly tipping put 27 inductions, make nearly tipping put 27 and open solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 13, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is made up of pressure module 28, flip flop equipment is located at the below of irradiation portion 20, circuit board 22 and fin 23 are installed in block edge 211 belows of cover 21, circuit board 22 ' with the spaced apart segment distance in fin 23 bottom surfaces, circuit board 22 ' group is fixed in main body 10 inwalls, circuit board 22 ' and fin 23 between be equiped with a pressure module 28, cover 21 is pressed when touching skin, pressure module 28 is sensed pressure, make pressure module 28 open solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 14, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is made up of pressure module 28, flip flop equipment is located at the below of irradiation portion 20, solid state light emitter 24 is located on the opening 11, fin 23 is installed in solid state light emitter 24 belows, circuit board 22 and the spaced apart segment distance in fin 23 bottom surfaces, circuit board is fixed in main body 10 inwalls for 22 groups, be equiped with pressure module 28 between circuit board 22 and the fin 23, solid state light emitter 24 is connected with lead 222 with circuit board 22, and solid state light emitter 24 is pressed when touching skin, and pressure module 28 is sensed pressure, make pressure module 28 open solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 15, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is made up of pressure module 28, flip flop equipment is located at the below of irradiation portion 20, block edge 211 spaced apart segment distances of circuit board 22 and fin 23 and cover 21, circuit board is fixed in main body 10 inwalls for 22 groups, be equiped with pressure module 28 in circuit board 22 1 sides and 211 at block edge, solid state light emitter 24 is pressed when touching skin, pressure module 28 is sensed pressure, makes pressure module 28 open solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 16, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is put 27 by elastomer (Elastomer) 253 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, solid state light emitter 24 is located on the opening 11, fin 23 is installed in solid state light emitter 24 belows, circuit board 22 and the spaced apart segment distance in fin 23 bottom surfaces, circuit board is fixed in main body 10 inwalls for 22 groups, be equiped with an elastomer 253 between circuit board 22 and the fin 23, solid state light emitter 24 is connected with lead 222 with circuit board 22, be equiped with nearly tipping on the circuit board 22 and put 27, when solid state light emitter 24 pressures were touched skin, elastomer 253 produced and shrinks, making nearly tipping put 27 reduces with fin 23 relative distances, make nearly tipping put 27 inductions, make nearly tipping put 27 and open solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 17, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is put 27 by elastomer 253 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, circuit board 22 and fin 23 are installed in block edge 211 belows of cover 21, circuit board 22 ' with the spaced apart segment distance in fin 23 bottom surfaces, circuit board 22 ' group is fixed in main body 10 inwalls, circuit board 22 ' and fin 23 between the installing one elastomer 253, circuit board 22 ' on be equiped with nearly tipping and put 27, when cover 21 pressures are touched skin, elastomer 253 produces and shrinks, making nearly tipping put 27 reduces with fin 23 relative distances, make nearly tipping put 27 inductions, make nearly tipping put 27 and open solid state light emitter 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled time, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 18, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is put 27 by elastic parts 252 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, block edge 211 spaced apart segment distances of circuit board 22 and fin 23 and cover 21, circuit board is fixed in main body 10 inwalls for 22 groups, be equiped with elastic parts 252 between circuit board 22 and the block edge 211, be equiped with nearly tipping on the circuit board 22 and put 27, when cover 21 pressures are touched skin, elastic parts 252 produces and shrinks, and makes nearly tipping put 27 and reduces with cover 21 relative distances, makes nearly tipping put 27 inductions, then near tipping is put 27 and is opened solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 19, irradiation portion 20 is made up of cover 21 and solid state light emitter 24, flip flop equipment is put 27 by elastomer 253 with nearly tipping and is formed, flip flop equipment is located at the below of irradiation portion 20, block edge 211 spaced apart segment distances of circuit board 22 and fin 23 and cover 21, circuit board is fixed in main body 10 inwalls for 22 groups, be equiped with elastomer 253 between circuit board 22 and the block edge 211, be equiped with nearly tipping on the circuit board 22 and put 27, when cover 21 pressures are touched skin, elastomer 253 produces and shrinks, and makes nearly tipping put 27 and reduces with cover 21 relative distances, makes nearly tipping put 27 inductions, then near tipping is put 27 and is opened solid state light emitter 24 irradiation skins, when the 24 irradiation arrival scheduled times of solid state light emitter, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations.
As shown in figure 20, main body 10 ' be microscler external form, but be not limited thereto, main body 10 ' one sides are provided with display device 13 in regular turn, switch 14 and this buzzer 15, directly press with irradiation portion 20 in use and touch skin, 20 irradiations arrive the scheduled time when irradiation portion, buzzer 15 sends caution sound and reminds user, display device 13 demonstrates the accumulative frequency 131 of phototherapy device irradiation, and the accumulative frequency 131 among the figure is 8 to represent phototherapy device to shine skin the 8th time, but is not limited thereto, irradiation time 132 is that 88 to represent irradiation time be 88 seconds, but be not limited thereto, preferable between 30～600 seconds according to experimental result irradiation time 132, but be not limited thereto, when irradiation time 132 during less than 30 seconds, the light dosage of irradiation is low excessively to cause therapeutic effect not good, when irradiation time 132 during greater than 600 seconds, and the too high skin darkening that causes of the light dosage of irradiation.User must be handed main body 10 ' irradiation face, it is impatient to cause the acid of user hands to produce when therefore irradiation time 132 was greater than 600 seconds, the side effect that irradiation time 132 can cause during greater than 600 seconds the overlong time of skin in compression power to produce erythrosis, another is preferable between 30～300 seconds for irradiation time 132, but is not limited thereto.
As shown in figure 21, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is made up of limit switch, main body 10 is a rectangle, but be not limited thereto, main body 10 is respectively equipped with buzzer 15, display device 13, switch 14, and solid state light emitter 24 is located at an end of main body 10, and light non-transmittable layers 32 " is located at the side of solid state light emitter 24.
As shown in figure 22, irradiation portion 20 is made up of solid state light emitter 24, flip flop equipment is made up of limit switch 26, flip flop equipment is located at the below of irradiation portion 20, solid state light emitter 24 is located at an end of main body 10, fin 23 belows are located in temperature sensor 233, this fin 23 is installed in solid state light emitter 24 belows, fin 23 bottom surfaces contact on the limit switch 26, be connected with lead 222 between solid state light emitter 24 and the circuit board 22, by this, touch skin when solid state light emitter 24 pressures, make limit switch 26 open solid state light emitters 24 irradiation skins, when solid state light emitter 24 irradiations arrive the scheduled times, buzzer 15 sends caution sound and reminds user, and display device 13 demonstrates the accumulative frequency of solid state light emitter 24 irradiations; Light non-transmittable layers 32 " can be a kind of coating or body or any veil that shuts out the light (shown in Figure 22 is coating); but be not limited thereto; to reduce the light intensity that solid state light emitter 24 sides are penetrated; utilize solid state light emitter 24 lateral light non-transmittable layers 32 ", the light-ray condensing of solid state light emitter 24 is penetrated by front end, to strengthen luminous intensity, light non-transmittable layers 32 " is made up of any of silver, copper, aluminum, molybdenum, silicon, aluminium oxide or coating; also can use with the material of solid state light emitter 24 different refractivities and form light non-transmittable layers 32 ", utilizes the different mode of refractive index with light refraction; Solid state light emitter 24 can be sent the light that suppresses Propiobacterium, solid state light emitter 24 can produce heat simultaneously, cause solid state light emitter 24 surface temperatures to rise, the heat that solid state light emitter 24 produces can produce inhibitory action to Propiobacterium simultaneously, solid state light emitter 24 surface temperatures are preferably 40 ℃, but are not limited thereto, temperature sensor 233 monitoring solid state light emitters 24 surface temperatures, temperature sensor 233 can be controlled solid state light emitter 24 surface temperatures simultaneously, with solid state light emitter 24 surface temperatures be maintained at preferable temperature.
As shown in figure 23, for being applied to the light emitting diode in the above-mentioned phototherapy device of the present utility model, it is by light-emitting diodes tube body 51, first crystal grain 511 and second crystal grain 512 are formed, crystal grain can adopt lead-in wire or cover crystal type, number of dies is not limited at least two, another is preferably 3 or 4 number of dies, but be not limited thereto, wherein, light-emitting diodes tube body 51 can adopt E-POWER (to see also TW545699, TW558066), LuxeonEmitter (seeing also US6590235), any structure of tradition barrel shape LED, but be not limited thereto, light-emitting diodes tube body 51 comprises a support radiating block 513, form a depressed part on this support radiating block, support radiating block 513 both sides respectively are extended with a bending support 514,515, the bending support that the thickness of support radiating block 513 extends than both sides is thick, light-emitting diodes tube body 51 envelopes are established in conjunction with this support radiating block 513 and each crystal grain, and these support radiating block 513 bottom surfaces expose to outside the light-emitting diodes tube body 51, each bending support 514 that extends of these support radiating block 513 both sides, 515 also extend and expose to outside the light-emitting diodes tube body 51, first crystal grain 511 and second crystal grain 512 make light emitting diode have the characteristic of high voltage low current, and the heat that can effectively reduce crystal grain and sent, to improve the luminous power that crystal grain sends, improve therapeutical effect, first crystal grain 511 and second crystal grain 512 are positioned at light-emitting diodes tube body 51, first crystal grain 511 is mixed with the light of second crystal grain 512, make distribution of light more even, to improve therapeutical effect, the wavelength of first crystal grain 511 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 511 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 511 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 511 is the light of 630～890nm, its tool promotes the effect of wound healing, another wavelength of first crystal grain 511 is preferably the light of 450～630nm to suppress Propiobacterium, the wavelength of second crystal grain 512 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 512 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 512 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 512 is the light of 630～890nm, its tool promotes the effect and the effect that lowers wrinkle of wound healing, another wavelength of second crystal grain 512 is preferably the light of 450～630nm to suppress Propiobacterium, the light-emitting diodes tube body 51 preferable UV absorbent that comprise are to absorb the wavelength below the 400nm.
As shown in figure 24, another light emitting diode of the present utility model, by light-emitting diodes tube body 52, first crystal grain 521 and second crystal grain 522 are formed, first crystal grain 521 and second crystal grain 522 are positioned at light-emitting diodes tube body 52, first crystal grain 521 is mixed with the light of second crystal grain 522, make distribution of light more even, to improve therapeutical effect, first crystal grain 521 and second crystal grain 522 make light emitting diode have the characteristic of high voltage low current, and the heat that can effectively reduce crystal grain and sent, the wavelength of first crystal grain 521 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 521 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 521 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 521 is the light of 630～890nm, its tool promotes the effect of wound healing, another wavelength of first crystal grain 521 is preferably the light of 450～630nm to suppress Propiobacterium, the wavelength of second crystal grain 522 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 522 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 522 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 522 is the light of 630～890nm, its tool promotes the effect and the effect that lowers wrinkle of wound healing, the light that another wavelength of second crystal grain 522 is preferably 450～630nm suppresses Propiobacterium, the light-emitting diodes tube body 52 preferable UV absorbent that comprise are to absorb the wavelength below the 400nm.
As shown in figure 25, another light emitting diode of the present utility model, by light-emitting diodes tube body 53, first crystal grain 531 and second crystal grain 532 are formed, first crystal grain 531 and second crystal grain 532 are positioned at light-emitting diodes tube body 53, first crystal grain 531 is mixed with the light of second crystal grain 532, make distribution of light more even, to improve therapeutical effect, first crystal grain 531 and second crystal grain 532 make light emitting diode have the characteristic of high voltage low current, and the heat that can effectively reduce crystal grain and sent, the wavelength of first crystal grain 531 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 531 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 531 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 531 is the light of 630～890nm, its tool promotes the effect of wound healing, another wavelength of first crystal grain 531 is preferably the light of 450～630nm to suppress Propiobacterium, the wavelength of second crystal grain 532 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 532 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 532 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 532 is the light of 630～890nm, its tool promotes the effect and the effect that lowers wrinkle of wound healing, another wavelength of second crystal grain 532 is preferably the light of 450～630nm to suppress Propiobacterium, the light-emitting diodes tube body 53 preferable UV absorbent that comprise are to absorb the wavelength below the 400nm.
As shown in figure 26, another light emitting diode of the present utility model, by light-emitting diodes tube body 54, first crystal grain 541 and second crystal grain 542 are formed, crystal grain can adopt lead-in wire or cover crystal type, crystal grain among the figure is for adopting lead-in wire, light-emitting diodes tube body 54 more comprises first pin 543, second pin 544, first pin 543, be provided with a support 545 between second pin 544, the end face of this support 545 is established first crystal grain 541 and second crystal grain 542, first crystal grain 541 and second crystal grain 542 respectively with first pin 543, second pin 544 connects, support 545 extends the outside of light-emitting diodes tube body 54, first crystal grain 541 and second crystal grain 542 are positioned at light-emitting diodes tube body 54, first crystal grain 541 is mixed with the light of second crystal grain 542, make distribution of light more even, to improve therapeutical effect, first crystal grain 541 and second crystal grain 542 make light emitting diode have the characteristic of high voltage low current, and the heat that can effectively reduce crystal grain and sent, the wavelength of first crystal grain 541 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 541 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 541 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of first crystal grain 541 is the light of 630～890nm, its tool promotes the effect of wound healing, another wavelength of first crystal grain 541 is preferably the light of 450～630nm to suppress Propiobacterium, the wavelength of second crystal grain 542 is that 320～400nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 542 is that 400～450nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 542 is that 400～420nm is to suppress Propiobacterium, another preferred wavelength of second crystal grain 542 is the light of 630～890nm, its tool promotes the effect and the effect that lowers wrinkle of wound healing, and another wavelength of second crystal grain 542 is preferably the light of 450～630nm to suppress Propiobacterium.The light-emitting diodes tube body 54 preferable UV absorbent that comprise are to absorb the wavelength below the 400nm.
As shown in figure 27, be the inhibition design sketch of wavelength of light to Propiobacterium, the wavelength of tool treatment pimples is respectively 320～400nm, 400～450nm, 450～630nm, 630～890nm, wavelength is that the wavelength of 320～400nm is a ultraviolet wavelength, ultraviolet wavelength is preferable to the inhibition effect of Propiobacterium, but ultraviolet can produce carcinogenesis to skin, therefore preferable with the therapeutic effect of wavelength 400～450nm, preferable with about 420nm wavelength in the wavelength of wavelength 400～450nm to the inhibition effect of Propiobacterium, another preferred wavelength is 400～420nm, the wavelength of 450～630nm also has the inhibition effect to Propiobacterium, the light of 630～890nm, its tool promote the effect and the effect that lowers wrinkle of wound healing.
As shown in figure 28, for taking the spectral absorption figure (absorptionspectra) of oxygen haemachrome (o xyhemoglobin), the oxygen haemachrome molecular extinction coefficient high to the light tool of 400～450nm (molar-extinction coefficient) taken in Figure 28 demonstration, therefore take the oxygen haemachrome absorbance higher to the light tool of 400～450nm, wherein, it is higher in the absorbance of 400～420nm to take the oxygen haemachrome, it is preferable that but the light of wavelength 400～420nm suppresses the effect of Propiobacterium, it is the highest to the absorbance of about 420nm wavelength to take the oxygen haemachrome, and the 420nm wavelength is preferable to the inhibition effect of Propiobacterium, therefore the oxygen haemachrome of taking of skin surface must be arranged, with the penetration depth of raising light, and then improve therapeutic effect to skin.
As shown in figure 29, for taking the spectral absorption figure (absorption spectra) of oxygen haemachrome (o xyhemoglobin) and haemachrome (hemoglobin), Figure 29 shows and takes oxygen haemachrome and the haemachrome light tool macromolecule extinction coefficient (molar-extinction coefficient) to 320～890nm.
Suppose to inject with a light source skin of thickness X, available formula I represents:
C(X)＝C(0)(K)exp(-X/Delta)....I。
C (X): the light dosage under skin thickness X (concentration of light);
C (0): the light dosage of incident light source (concentration of light);
K: constant (constant);
X: skin thickness;
Delta＝1/(3μa(μa+μs′))；
μ a[cm-1]: absorptance (absorption coefficient);
μs′＝μs(1-g)；
μ s ' [cm-1]: lower scattering coefficient (reduced scattering coeficient);
μ s[cm-1]: scattering coefficient (scattering coefficient);
G: non-all to coefficient (anisotropy coefficient);
Suppose that be the skin pressurization of X with certain pressure P to thickness, available formula II represents:
ΔX＝(X/E)P....II。
Δ X: deformation (deflection);
P: the pressure that puts on skin;
X: skin thickness;
E: young's modulus (Young ' s modulus);
Therefore learn increase by formula I with skin thickness X, C (X) presents exponential decay, can learn with certain pressure P by formula I formula II skin is pressurizeed, can make thinning of skin significantly to improve the degree of depth of light penetration skin, pressurization still can arrange the oxygen haemachrome of taking of skin surface to skin with certain pressure simultaneously, taken the absorption of oxygen haemachrome to reduce light, significantly to improve the degree of depth of light penetration skin, therefore can significantly promote the penetrance of light to skin, but with the overlong time of certain pressure P to the skin pressurization, can cause erythrosis, therefore must accurately control the time of pressurization, pressure P is preferably 2.8～280mBar, another is preferably 14～168mBar pressure P, pressure P is preferably 19.6～98mBar, and another is preferably 25.2～98mBar pressure P, and another is preferably 28～168mBar pressure P.
Below tabulate the degree of depth of various wavelength light transdermals, the relative skin depth (consulting US4930504) the when intensity of light source reduces to original incident light source intensity 1/e (37%).Wavelength (nm) is the intensity of the relative skin depth of intensity (nm) light source of skin depth (nm) light source relatively
250 0 1 2 1/e(37％)
280 0 1 1.5 1/e(37％)
350 0 1 60 1/e(37％)
400 0 1 90 1/e(37％)
450 0 1 150 1/e(37％)
500 0 1 230 1/e(37％)
600 0 1 550 1/e(37％)
700 0 1 750 1/e(37％)
800 0 1 1200 1/e(37％)
1000 0 1 1600 1/e(37％)
1200 0 1 2200 1/e(37％)
Claims (10)
1, a kind of phototherapy device that is applied to treat pimples, it is characterized in that: described phototherapy device comprises:
One main body;
One irradiation portion is located at aforementioned body, and above-mentioned irradiation portion has the irradiation portion that wavelength can be treated pimples.
One can show that the display device of the accumulative frequency of above-mentioned irradiation portion irradiation is located at aforementioned body.
2. phototherapy device as claimed in claim 1, it is characterized in that: buzzer is located at aforementioned body.
3, a kind of phototherapy device that is applied to treat pimples, it is characterized in that: described phototherapy device comprises:
One main body;
One irradiation portion is located at aforementioned body, and above-mentioned irradiation portion has the irradiation portion that wavelength can be treated pimples;
At least one flip flop equipment is located at aforementioned body.
4, phototherapy device as claimed in claim 3 is characterized in that: above-mentioned flip flop equipment is made up of limit switch.
5. phototherapy device as claimed in claim 3 is characterized in that: one can show that the display device of the accumulative frequency of above-mentioned irradiation portion irradiation is located at aforementioned body.
6, a kind of light emitting diode that is applied to the phototherapy device of above-mentioned treatment pimples, it is characterized in that: described light emitting diode comprises:
One light-emitting diodes tube body;
At least one first crystal grain, this first crystal grain is located at above-mentioned light-emitting diodes tube body, and above-mentioned first crystal grain is to have the crystal grain that wavelength can be treated pimples;
At least one second crystal grain, this second crystal grain is located at above-mentioned light-emitting diodes tube body.
7, the light emitting diode of the phototherapy device of treatment pimples as claimed in claim 6 is characterized in that: described light-emitting diodes tube body comprises:
One support radiating block is located at the light-emitting diodes tube body, and above-mentioned support radiating block is provided with a depressed part; Two bending supports, this bending support is extended by the radiating block both sides, the above-mentioned bending support that the thickness of above-mentioned support radiating block extends than both sides is thick, above-mentioned light-emitting diodes tube body envelope is established in conjunction with above-mentioned support radiating block and above-mentioned first crystal grain, and above-mentioned support radiating block bottom surface exposes to outside the above-mentioned light-emitting diodes tube body, and each above-mentioned bending support that extends of above-mentioned support radiating block both sides also extends and exposes to outside the above-mentioned light-emitting diodes tube body.
8, the light emitting diode of the phototherapy device of treatment pimples as claimed in claim 6 is characterized in that: described light-emitting diodes tube body comprises:
First pin and second pin, described first pin, second pin are connected with above-mentioned first crystal grain;
One is set up between above-mentioned first pin, above-mentioned second pin, and the end face of above-mentioned support comprises above-mentioned first crystal grain, and above-mentioned support extends the outside of above-mentioned light-emitting diodes tube body.
9, a kind of phototherapy device that is applied to treat pimples, it is characterized in that: described phototherapy device comprises:
One main body;
One cover is located at aforementioned body, and the side of above-mentioned cover is a light non-transmittable layers, and its central authorities are photic zone;
One irradiation portion is located at the below of above-mentioned cover, and above-mentioned irradiation portion has the irradiation portion that wavelength can be treated pimples.
10, a kind of phototherapy device, it is characterized in that: it comprises:
One main body;
One irradiation portion is located at aforementioned body;
At least one flip flop equipment, above-mentioned flip flop equipment are located at the below of above-mentioned irradiation portion.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2003201317726U CN2714088Y (en) | 2003-12-30 | 2003-12-30 | Phototherapy device for treating face herpes and LED used therein |
| PCT/CN2004/000020 WO2005065777A1 (en) | 2003-12-30 | 2004-01-07 | A phototherapy device, a led used therein and the method for treating acne |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2003201317726U CN2714088Y (en) | 2003-12-30 | 2003-12-30 | Phototherapy device for treating face herpes and LED used therein |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2714088Y true CN2714088Y (en) | 2005-08-03 |
Family
ID=34744508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2003201317726U Expired - Fee Related CN2714088Y (en) | 2003-12-30 | 2003-12-30 | Phototherapy device for treating face herpes and LED used therein |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN2714088Y (en) |
| WO (1) | WO2005065777A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104136075A (en) * | 2012-02-21 | 2014-11-05 | 本加恩·阿萨哈 | A hand-held device for combined light and electrotherapy of a skin surface |
| CN106512224A (en) * | 2015-09-09 | 2017-03-22 | 泰金宝电通股份有限公司 | Skin makeup device |
| CN109195662A (en) * | 2016-05-27 | 2019-01-11 | 夏普株式会社 | Phototherapeutic device and fixing piece |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009022344A1 (en) | 2009-05-15 | 2010-11-18 | Gelhausen, Olaf, Dr. | Irradiation device for medical, cosmetic and industrial applications, comprises portable housing and semiconductor diode for emission of electromagnetic radiation in ultraviolet area, visible area or infrared area |
| US8425577B2 (en) | 2010-12-14 | 2013-04-23 | Joanna Vargas | LED phototherapy apparatus |
| EP3858435B1 (en) | 2017-06-20 | 2024-05-01 | Colgate-Palmolive Company | Skin care system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5549660A (en) * | 1990-11-15 | 1996-08-27 | Amron, Ltd. | Method of treating acne |
| RU2013218C1 (en) * | 1991-05-08 | 1994-05-30 | Ворухайлов Степан Андреевич | Disassembly and assembly stand for tyres |
| CN2298821Y (en) * | 1997-03-10 | 1998-12-02 | 叶梅子 | Master controller of extra long electromagnetic wave therapeutic appts. |
| US6223071B1 (en) * | 1998-05-01 | 2001-04-24 | Dusa Pharmaceuticals Inc. | Illuminator for photodynamic therapy and diagnosis which produces substantially uniform intensity visible light |
-
2003
- 2003-12-30 CN CNU2003201317726U patent/CN2714088Y/en not_active Expired - Fee Related
-
2004
- 2004-01-07 WO PCT/CN2004/000020 patent/WO2005065777A1/en active Application Filing
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104136075A (en) * | 2012-02-21 | 2014-11-05 | 本加恩·阿萨哈 | A hand-held device for combined light and electrotherapy of a skin surface |
| US9962545B2 (en) | 2012-02-21 | 2018-05-08 | Unimed Aps | Hand-held device for combined light and electrotherapy of a skin surface |
| CN106512224A (en) * | 2015-09-09 | 2017-03-22 | 泰金宝电通股份有限公司 | Skin makeup device |
| CN109195662A (en) * | 2016-05-27 | 2019-01-11 | 夏普株式会社 | Phototherapeutic device and fixing piece |
| CN109195662B (en) * | 2016-05-27 | 2020-12-22 | 夏普株式会社 | Light treatment device and fixing part |
| US10974061B2 (en) | 2016-05-27 | 2021-04-13 | Sharp Kabushiki Kaisha | Optical treatment apparatus and fixing tool |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005065777A1 (en) | 2005-07-21 |
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