CN2645237Y - CMOS mode image reading sensor chip - Google Patents
CMOS mode image reading sensor chip Download PDFInfo
- Publication number
- CN2645237Y CN2645237Y CNU032172419U CN03217241U CN2645237Y CN 2645237 Y CN2645237 Y CN 2645237Y CN U032172419 U CNU032172419 U CN U032172419U CN 03217241 U CN03217241 U CN 03217241U CN 2645237 Y CN2645237 Y CN 2645237Y
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- photoelectric conversion
- prime
- conversion sensor
- scanning direction
- sensor sub
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Abstract
The utility model discloses a CMOS type sensor chip for reading images, relates to a photoelectric sensor semiconductor chip; a photoelectric conversion element is arranged on the chip. Each of the four photoelectric conversion elements is a unit. A filter membrane is arranged on each photoelectric conversion element. The photoelectric conversion elements respectively with R, G, and B three-color filter membrane are repeatedly arranged with equal spacing in the same manner of 2x2 lattice. The arrangement in every 2x2 lattice is that the sequence from the main scanning direction to the inferior scanning direction is R, B, G, G or the photoelectric conversion elements separately with R, G, B three-color filter membrane repeatedly are arranged in equal spacing in the same manner of 2x2 lattice. The arrangement in every 2x2 lattice is that the sequence from the main scanning direction to the inferior scanning direction is R, G, G, and B, which is applied to chromatic contact image sensors.
Description
Technical field the utility model relates to a kind of photoelectric sensor semiconductor chip, says it is a kind of CMOS type image read sensor chip in detail.
We know background technology, the CMOS type image read sensor chip that existing colored contact-type image sensor adopted is the CMOS type image read sensor chip that reads monochrome image information, the operation principle of the color image reader that it constitutes is, R, G, B three-color light source are lit a lamp in the time of lighting a lamp of regulation successively, in during of all kinds the lighting a lamp, electric charge is put aside in the photoelectric conversion sensor sub-prime, and then from photoelectric conversion sensor sub-prime reading images information.This chip, at sub scanning direction, the field of reading that the field of reading of R and the field of reading of G produce the field of reading of deviation, G of 1/3 pixel and B produces the deviation of 1/3 pixel, promptly, the R that reads, comprise different field, G, B image of all kinds are read signal carried out recombinant as the picture signal of a pixel, there is colo(u)r bias, causes the reproducibility of color poor, can not accurately read color image information; Because three-color light source circulation conducting, R, G, B photoelectric conversion sensor sub-prime be the serial output image information successively, so reading speed is slow.
The problem of summary of the invention the utility model technical solution is, solution is at sub scanning direction, the field of reading that the field of reading of R and the field of reading of G produce the field of reading of deviation, G of 1/3 pixel and B produces the deviation of 1/3 pixel, promptly, the R that reads, comprise different field, G, B image of all kinds are read signal carried out recombinant as the picture signal of a pixel, there is colo(u)r bias, causes the reproducibility of color poor, can not accurately read color image information; Because three-color light source circulation conducting, R, G, B photoelectric conversion sensor sub-prime be the serial output image information successively, so the slow problem of reading speed.A kind of no colo(u)r bias is provided, and the reproducibility of color is good, can read color image information accurately, fast; The read-out resolution of monochrome image information is 2 times a CMOS type image read sensor chip of the read-out resolution of color image information.
The technical solution of the utility model is, chip is provided with the photoelectric conversion sensor sub-prime, its primary structure characteristics are, per four photoelectric conversion sensor sub-primes are a unit, each photoelectric conversion sensor sub-prime top is provided with a slice filter coating, and the photoelectric conversion sensor sub-prime that has R, G, B three look filter coatings respectively is with the equidistant repeated arrangement of the same way as of 2 * 2 dot matrix; Arrangement mode in each 2 * 2 dot matrix is R, B, G, G by main scanning direction to putting in order of sub scanning direction; The photoelectric conversion sensor sub-prime that perhaps has R, G, B three look filter coatings respectively is with the equidistant repeated arrangement of the same way as of 2 * 2 dot matrix; Arrangement mode in each 2 * 2 dot matrix, is R, G, G, B by main scanning direction to putting in order of sub scanning direction, wherein R represents red photoelectric conversion sensor sub-prime, and G represents green glow photoelectric conversion sensor sub-prime, and B represents blue streak photoelectric conversion sensor sub-prime.
As the photoelectric conversion sensor sub-prime, can be that phototriode also can be a photodiode.
The beneficial effects of the utility model are, during use, the a plurality of photoelectric conversion sensor sub-primes of main scanning direction are formed photoelectric conversion sensor sub-prime row, sub scanning direction photoelectric conversion sensor sub-prime row dispose 2 row in parallel to each other, first column information that reads the information of the secondary series that the period 1 reads and second round is used in combination, can make the R that is read on the body, G, the field of reading of B is in full accord, with regard to the color reproduction deterioration that has prevented to cause because of aberration, no colo(u)r bias, the reproducibility of color is good, accurate reading images information, the read-out resolution of monochrome image information is 2 times of read-out resolution of color image information, and reading speed is the CMOS type image read sensor chip of 3 times of prior aries.The utility model is applicable to colored contact-type image sensor and black and white contact-type image sensor.
Description of drawings Fig. 1, Fig. 2 are the schematic diagrames of a kind of execution mode of the present utility model, and Fig. 1 is a front view, and Fig. 2 is the vertical view of Fig. 1.Fig. 1, Fig. 3 are the schematic diagrames of a kind of execution mode of the utility model, and Fig. 3 is the vertical view of Fig. 1.
Execution mode from Fig. 1, Fig. 2 as can be seen, chip 1 is provided with photoelectric conversion sensor sub-prime 3, per four photoelectric conversion sensor sub-primes 3 are a unit, each photoelectric conversion sensor sub-prime 3 top is provided with a slice filter coating 2, and the photoelectric conversion sensor sub-prime that has R, G, B three look filter coatings 2 respectively is with the equidistant repeated arrangement of the same way as of 2 * 2 dot matrix; Arrangement mode in each 2 * 2 dot matrix, is R, B, G, G by main scanning direction to putting in order of sub scanning direction, wherein R represents red photoelectric conversion sensor sub-prime, and G represents green glow photoelectric conversion sensor sub-prime, and B represents blue streak photoelectric conversion sensor sub-prime.The photoelectric conversion sensor sub-prime can be that phototriode also can be a photodiode.
From Fig. 1, Fig. 3 as can be seen, chip 1 is provided with photoelectric conversion sensor sub-prime 3, per four photoelectric conversion sensor sub-primes 3 are a unit, each photoelectric conversion sensor sub-prime 3 top is provided with a slice filter coating 2, and the photoelectric conversion sensor sub-prime that has R, G, B three look filter coatings 2 respectively is with the equidistant repeated arrangement of the same way as of 2 * 2 dot matrix; Arrangement mode in each 2 * 2 dot matrix, is R, G, G, B by main scanning direction to putting in order of sub scanning direction, wherein R represents red photoelectric conversion sensor sub-prime, and G represents green glow photoelectric conversion sensor sub-prime, and B represents blue streak photoelectric conversion sensor sub-prime.The photoelectric conversion sensor sub-prime can be that phototriode also can be a photodiode.
Claims (3)
1, a kind of CMOS type image read sensor chip, chip is provided with the photoelectric conversion sensor sub-prime, it is characterized in that: per four photoelectric conversion sensor sub-primes are a unit, each photoelectric conversion sensor sub-prime top is provided with a slice filter coating, and the photoelectric conversion sensor sub-prime that has R, G, B three look filter coatings respectively is with the equidistant repeated arrangement of the same way as of 2 * 2 dot matrix; Arrangement mode in each 2 * 2 dot matrix is R, B, G, G by main scanning direction to putting in order of sub scanning direction; The photoelectric conversion sensor sub-prime that perhaps has R, G, B three look filter coatings respectively is with the equidistant repeated arrangement of the same way as of 2 * 2 dot matrix; Arrangement mode in each 2 * 2 dot matrix, is R, G, G, B by main scanning direction to putting in order of sub scanning direction, wherein R represents red photoelectric conversion sensor sub-prime, and G represents green glow photoelectric conversion sensor sub-prime, and B represents blue streak photoelectric conversion sensor sub-prime.
2, CMOS type image read sensor chip according to claim 1, it is characterized in that: said photoelectric conversion sensor sub-prime is a phototriode.
3, CMOS type image read sensor chip according to claim 1, it is characterized in that: said is photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032172419U CN2645237Y (en) | 2003-05-12 | 2003-05-12 | CMOS mode image reading sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032172419U CN2645237Y (en) | 2003-05-12 | 2003-05-12 | CMOS mode image reading sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2645237Y true CN2645237Y (en) | 2004-09-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032172419U Expired - Lifetime CN2645237Y (en) | 2003-05-12 | 2003-05-12 | CMOS mode image reading sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2645237Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783854B (en) * | 2009-01-21 | 2013-01-16 | 威海华菱光电有限公司 | Image reading device |
| CN103561190A (en) * | 2013-11-05 | 2014-02-05 | 威海华菱光电股份有限公司 | Image reading device and system |
-
2003
- 2003-05-12 CN CNU032172419U patent/CN2645237Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783854B (en) * | 2009-01-21 | 2013-01-16 | 威海华菱光电有限公司 | Image reading device |
| CN103561190A (en) * | 2013-11-05 | 2014-02-05 | 威海华菱光电股份有限公司 | Image reading device and system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: WEIHAI HUALING OPTOELECTRONIC CO., LTD. Free format text: FORMER OWNER: HUALING ELECTRONICS CO., LTD., SHANDONG Effective date: 20111103 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111103 Address after: 264209 Weihai high tech Industrial Development Zone, Shandong Torch Road, No. 159 Patentee after: Weihai Hualing Optoelectronic Co., Ltd. Address before: 264209, Torch Building, Beiyang building, hi tech District, Shandong, Weihai Patentee before: Hualing Electronics Co., Ltd., Shandong |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 264209 Weihai high tech Industrial Development Zone, Shandong Torch Road, No. 159 Patentee after: Weihai Hualing Opto-electronics Co.,Ltd. Address before: 264209 Weihai high tech Industrial Development Zone, Shandong Torch Road, No. 159 Patentee before: Weihai Hualing Optoelectronic Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20130512 Granted publication date: 20040929 |