CN2579910Y - Diamond composite diamond product by chemical gas phase deposition diamond polycrystal - Google Patents
Diamond composite diamond product by chemical gas phase deposition diamond polycrystal Download PDFInfo
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- CN2579910Y CN2579910Y CN 02289312 CN02289312U CN2579910Y CN 2579910 Y CN2579910 Y CN 2579910Y CN 02289312 CN02289312 CN 02289312 CN 02289312 U CN02289312 U CN 02289312U CN 2579910 Y CN2579910 Y CN 2579910Y
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- diamond
- vapour deposition
- chemical vapour
- polycrystalline
- polycrystalline diamond
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a complex type diamond product of a CVD diamond and a polycrystalline diamond. The utility model can have three structures that the first structure is that the surface of the polycrystalline diamond is adhered with a CVD diamond layer with the thickness more than 0.01 mm (no limitation of the thickness) to form a CVDD-PCD complex; the second structure is that CVDD-PCD complex is welded on a hard alloy basal body to be made into a CVDD-PCD-WC (Co) three-layer complex; the third structure is that surface of the polycrystalline diamond of a polycrystalline diamond compact is adhered with a CVD diamond layer with the thickness more than 0.01 mm to form a CVDD-PCD compact three-layer complex. The CVD diamond is directly coated on the surface of the polycrystalline diamond. Because the thermal expansion coefficient of the CVD diamond and the polycrystalline diamond is relatively close, and the basic structures of the CVD diamond and the polycrystalline diamond are diamonds, the problem of adhesion force can be fundamentally solved, and the thickness of the CVD diamond layer can not be limited any more.
Description
Technical field: the utility model relates to a kind of tool material structure, particularly relates to a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods.
Background technology: chemical vapour deposition diamond is a kind of pleocrystalline pure polycrystalline diamond (being called for short CVDD) that the method for employing chemical vapour deposition (being called for short CVD) prepares, it can be the membranaceous substrate surface that is attached to, so often claim diamond film again, can also be the pure diamond sheet that breaks away from substrate.The physicals of chemical vapour deposition diamond and natural diamond are roughly the same or very approaching, and chemical property is then identical.
Because the preparation cost of chemical vapour deposition diamond is lower, can big areaization and curved surfaceization, and its thickness can be on demand from one micron of less than until several millimeters, so have than particulate state diamond purposes more widely.As:
1〉utilizes its high rigidity and wear resistance, can be used as the superhard coating of instrument, thereby make the life-span of instrument improve tens to tens times.Also can be with thick chemical vapour deposition diamond sheet, replace natural diamond through after the laser cutting, processing is made into various solder type diamond tools, as the cutter of high precision crushing cutter, wortle and the processing of various superhard material and non-ferrous metal processing usefulness etc.Because chemical vapour deposition diamond does not contain any metal or non-metallic additive, its polycrystalline structure makes it all have much at one extreme hardness in all directions again, there is not cleavage surface, therefore its mechanical property has the advantage of single-crystal diamond and polycrystalline diamond (being called for short PCD) concurrently, and has overcome their deficiency to a certain extent.Practice shows that can substantially exceed single-crystal diamond and polycrystalline diamond instrument the work-ing life of solder type chemical vapour deposition diamond instrument, and working accuracy then can be approximate with MONOCRYSTAL DIAMOND TOOLS, obviously is superior to the polycrystalline diamond instrument.Therefore, developed country such as the U.S., Japan with the CVD diamond as optimal tool material in the motor car engine production.
2〉the low thermal coefficient of expansion characteristic of utilizing its high thermal conductivity, high insulation resistance and better mating with numerous semiconductor materials, the radiating element----that can make high power density circuit elements such as microwave tube, laser diode, array device and high-power integrated circuit is heat sink.The application of diamond heat-sink will cause the once leap of microelectronics and optoelectronics industry development.
Chemical vapour deposition diamond has much higher hardness and wear resistance than common polycrystalline diamond, is used for machine tools and can realizes higher working accuracy, smooth finish and work-ing life.At present chemical vapour deposition diamond is applied to cutter two kinds of ways is arranged:
A. coating.Promptly on the matrix of inserted tool, mould or drilling tool, directly apply the skim chemical vapour deposition diamond.The big quantity research of this method quilt, but produce little effect.Major cause is that the sticking power of chemical vapour deposition diamond layer is too poor, come off from hard alloy substrate easily, and the thickness of chemical vapour deposition diamond layer also has been subjected to very big restriction, generally must be thinner than 50 μ m, otherwise very easily come off.The whole world has only the coating prod of several companies seldom to be applied at present, and on the high side, therefore can not get a large amount of applying always.
B. solder type chemical vapour deposition diamond thick film instrument.This kind way is that the chemical vapour deposition diamond sheet with thickness 0.3-0.6mm is welded on the hard alloy substrate (being called for short WC) and makes the CVDD-WC composite sheet, and then the CVDD-WC composite sheet is welded on is made into cutting tool on the tool matrix.But because the thermal expansivity of chemical vapour deposition diamond and Wimet differs bigger, bigger during the welding postcooling because of the shrinkage difference, cause the inner serious stress damage of chemical vapour deposition diamond easily, cause the chemical vapour deposition diamond pull-up to fall or crackle occurs, in use also easy tipping, so its application also has been subjected to very big restriction.This kind product came into the market since phase early 1990s, past nearly till now 10 years, still just have short run to use at home and abroad, and product stability is relatively poor.
Summary of the invention: the purpose of this utility model is to improve the shortcoming of prior art, and a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods are provided.
For achieving the above object, the utility model is taked following design:
If chemical vapour deposition diamond directly is attached to the surface of polycrystalline diamond, then because the two thermal expansivity is more approaching, its basic structure all is again diamond, then can fundamentally solve the chemical vapour deposition diamond internal stress damage problem that sticking power problem and shrinkage amount difference cause, the thickness of chemical vapour deposition diamond layer also can no longer be restricted, the also easier assurance of quality.
The utility model can have three kinds of structures:
1, thickness chemical vapour deposition diamond layer of (thickness is not limit) more than 0.01mm is adhered on the polycrystalline diamond surface, and the chemical vapour deposition diamond layer combines closely with the polycrystalline diamond interlayer, constitutes the CVDD-PCD complex body.
2, adhere to the CVDD-PCD compound system on the hard alloy substrate and make three layers of complex body of CVDD-PCD-WC (Co).
3. the chemical vapour deposition diamond layer of thickness more than 0.01mm adhered in the polycrystalline diamond surface of polycrystalline diamond compacts (PDCs) (polycrystalline diamond layer combines the double-layer composite material that constitutes with hard alloy layer), the chemical vapour deposition diamond layer combines closely with the polycrystalline diamond interlayer, polycrystalline diamond combines closely with the Wimet interlayer, constitutes three layers of complex body of CVDD-PCD.
Advantage of the present utility model:
1. the growth temperature of chemical vapour deposition diamond is generally at 600 ℃-1100 ℃, adopt common matrix growth chemical vapour deposition diamond, because the two thermal expansivity differs more, cause the inner a large amount of stress damage of chemical vapour deposition diamond easily when behind growth ending, lowering the temperature.And adopt polycrystalline diamond as the matrix chemical vapour deposition diamond of growing, then can ignore substantially, therefore the quality of easier assurance chemical vapour deposition diamond because of the internal stress damage that cold and hot distortion caused;
2. make three layers of complex body of CVDD-PCD-WC (Co), then because polycrystalline diamond layer has better shock resistance than chemical vapour deposition diamond, its thermal expansivity also the boundary between chemical vapour deposition diamond and Wimet, so can play good transition and shock absorption, thereby overcome the weakness of the shock resistance difference of chemical vapour deposition diamond, bring into play the advantageous characteristic of chemical vapour deposition diamond better.
3.CVDD-PCD matrix material has better workability than simple chemical vapour deposition diamond.Owing to well below the chemical vapour deposition diamond layer, therefore can carry out processing such as gauge control at the polycrystalline diamond face, thereby cut down finished cost greatly as the wear resistance of the polycrystalline diamond layer of chemical vapour deposition diamond substrate or transition layer.
Therefore, adopt the CVDD-PCD matrix material, high abrasion, the best bright finish characteristic of chemical vapour deposition diamond both can have been given full play to,, the poor adhesive force poor such as shock resistance that can overcome again that present chemical vapour deposition diamond run in using, workability difference etc. are a lot of not enough, thereby can realize the large-scale application of chemical vapour deposition diamond, as cutting tool, wire-drawing die, dressing tool, wear parts, oil or geological drilling etc.
4. chemical vapour deposition diamond has very high thermal conductivity, can be used for heat transfer radiator spare, and is heat sink etc. as heat radiation matrix, the laser diode array of high power density unicircuit.The CVDD-PCD matrix material has identical characteristic, but its growth and tooling cost are then well below the pure chemistry vapor diamond deposition of same thickness.Therefore, can replace the pure chemistry vapor diamond deposition to be used for heat transfer radiator spare within the specific limits.
5.CVDD-PCD matrix material also can be used for the making of bullion.
Description of drawings:
Fig. 1 is the utility model structural representation
Fig. 2 is the utility model synoptic diagram
Fig. 3 is the utility model synoptic diagram
Embodiment:
Embodiment 1: as shown in Figure 1, the utility model is not less than the chemical vapour deposition diamond layer 1 of 0.01mm by polycrystalline diamond 2 surface attachment thickness, chemical vapour deposition diamond layer 1 combines closely with polycrystalline diamond 2 interlayers, constitute the CVDD-PCD complex body, described adhering to at polycrystalline diamond 2 surface growth chemical vapour deposition diamond layers 1.
Embodiment 2: as shown in Figure 2, adhere to CVDD-PCD complex body 3 on the hard alloy substrate 4, be made into three layers of complex body of CVDD-PCD-WC (Co), described adhering to is welding.
Embodiment 3: as shown in Figure 3, polycrystalline diamond compacts (PDCs) 5 is made up of polycrystalline diamond 7 and cemented carbide substrate, the surface attachment thickness of polycrystalline diamond 7 is not less than the chemical vapour deposition diamond layer 1 of 0.01mm, chemical vapour deposition diamond layer 1 combines closely with polycrystalline diamond 7 interlayers, combine between polycrystalline diamond and cemented carbide substrate closely, constitute three layers of complex body of CVDD-PCD composite sheet, described adhering to for going out chemical vapour deposition diamond layer 1 in polycrystalline diamond 7 surface growths.
Claims (7)
1, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods of being made up of chemical vapour deposition diamond and polycrystalline diamond, it is characterized in that: the chemical vapour deposition diamond layer is adhered on the polycrystalline diamond surface.
2, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods according to claim 1 is characterized in that: adhere to described polycrystalline diamond surface on the hard alloy substrate and adhere to the chemical vapour deposition diamond layer.
3, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods according to claim 1, it is characterized in that: described polycrystalline diamond has cemented carbide substrate.
4, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods according to claim 1 and 2, it is characterized in that: described chemical vapour deposition diamond layer thickness is not less than 0.01mm.
5, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods according to claim 3, it is characterized in that: described chemical vapour deposition diamond layer thickness is not less than 0.01mm.
6, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods according to claim 1 is characterized in that: described adhering to is growth.
7, a kind of chemical vapour deposition diamond polycrystalline diamond composite diamond goods according to claim 2 is characterized in that: adhering on the described hard alloy substrate is to weld.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02289312 CN2579910Y (en) | 2002-11-27 | 2002-11-27 | Diamond composite diamond product by chemical gas phase deposition diamond polycrystal |
HK03108546A HK1056971A2 (en) | 2002-11-27 | 2003-11-24 | A compound diamond product of chemical vapor deposition diamond and polycrystalline diamond |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 02289312 CN2579910Y (en) | 2002-11-27 | 2002-11-27 | Diamond composite diamond product by chemical gas phase deposition diamond polycrystal |
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CN2579910Y true CN2579910Y (en) | 2003-10-15 |
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CN 02289312 Expired - Fee Related CN2579910Y (en) | 2002-11-27 | 2002-11-27 | Diamond composite diamond product by chemical gas phase deposition diamond polycrystal |
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HK (1) | HK1056971A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100425833C (en) * | 2005-04-13 | 2008-10-15 | 株式会社丰田自动织机 | Swash plate compressor |
CN112323144A (en) * | 2020-11-04 | 2021-02-05 | 吉林大学 | Surface-enhanced polycrystalline diamond compact and preparation method thereof |
-
2002
- 2002-11-27 CN CN 02289312 patent/CN2579910Y/en not_active Expired - Fee Related
-
2003
- 2003-11-24 HK HK03108546A patent/HK1056971A2/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100425833C (en) * | 2005-04-13 | 2008-10-15 | 株式会社丰田自动织机 | Swash plate compressor |
CN112323144A (en) * | 2020-11-04 | 2021-02-05 | 吉林大学 | Surface-enhanced polycrystalline diamond compact and preparation method thereof |
CN112323144B (en) * | 2020-11-04 | 2021-10-29 | 吉林大学 | Surface-enhanced polycrystalline diamond compact and preparation method thereof |
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HK1056971A2 (en) | 2004-02-13 |
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C53 | Correction of patent for invention or patent application | ||
C56 | Change in the name or address of the patentee | ||
CB03 | Change of inventor or designer information |
Designer after: Chen Jifeng Designer before: Chen Jifeng |
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Free format text: CORRECT: DESIGNER; FROM: CHEN JIFENG TO: CHEN JIFENG |
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CP01 | Change in the name or title of a patent holder |
Patentee after: Chen Jifeng Patentee before: Chen Jifeng |
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C19 | Lapse of patent right due to non-payment of the annual fee | ||
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