CN2571734Y - Gas phase synthesizer for preparing nano siliconnitride powder - Google Patents
Gas phase synthesizer for preparing nano siliconnitride powder Download PDFInfo
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- CN2571734Y CN2571734Y CN 02264298 CN02264298U CN2571734Y CN 2571734 Y CN2571734 Y CN 2571734Y CN 02264298 CN02264298 CN 02264298 CN 02264298 U CN02264298 U CN 02264298U CN 2571734 Y CN2571734 Y CN 2571734Y
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- reaction chamber
- carrier gas
- gas
- chamber
- silicon nitride
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Abstract
The utility model discloses a gas phase synthesizer for preparing nanometer siliconnitride powder, which can ensure that raw materials sufficiently take part in reaction. The utility model comprises a reaction chamber of a venturi structure cavity. The upper end of a cavity chamber of the reaction chamber is communicated with an ion arc output channel of a plasma generator, and a gas carrying input channel is arranged on the upper end of the reaction chamber. The channel is communicated with a gas carrying distributing device which is arranged on the upper part of the reaction chamber, and a gas carrying channel which enters the inner part of the reaction chamber along the inner wall of the reaction chamber from top to bottom is arranged between the gas carrying distributing device and the reaction chamber. Under the action of annular gas carrier and a fast ion arc, granules of products are conveyed in time when the granules do not grow up in time, and enter a refrigeration system under the driving of a gas flow at a high speed, without adhesion on the cavity wall of the reaction chamber.
Description
Technical field
The utility model discloses a kind of device that adopts gas-phase synthesizing method to prepare silicon nitride nano-material.
Technical background
The silicon nitride ceramics powder Application Areas is very wide, as wear resistant tools and part, and general heat-and corrosion-resistant parts, internal combustion turbine, diesel motor, chemical industry, national defence and other thermic devices.At present, the preparation of general beta-silicon nitride powder is the liquid process that adopts silicon powder nitride, product by nitrogenize is through superfine grinding, (silicon nitride of 100～10nm level then needs to adopt the novel process of induced with laser, and it is less and cost an arm and a leg that present domestic laser method prepares ultrafine powder of silicon nitride body scale to obtain nanometer.In order to overcome the deficiency that laser method exists, the technician begins energy is concentrated in the research that utilizes plasma arc synthesis of nano silicon nitride ceramics powder, reduce production costs with it, though can produce qualified nano-silicon nitride ceramics powder, gas phase synthetic as nano material specifically installs, prior art can't realize making the reaction zone that speeds away behind solid-state nitration silicon and the gaseous state hcl reaction, cause particle to grow up easily, be difficult to powder granule is controlled at nano level (100～20nm), thereby the quality product of the nano-silicon nitride ceramics powder that influence makes, the reaction zone because powder can not in time speed away product will occur in a large number attached to influencing continuous production in the synthesizer simultaneously; In addition, in order to produce different products, a plurality of raw material intake lines need be set on the wall of the chamber of reaction chamber, they are arranged on the different cross section height of reaction chamber, make the outside of synthesizer connect numerous raw material intake lines, this has not only increased the difficulty of processing of component, and makes processing set-up very chaotic.
Technology contents
The purpose of this utility model is to provide a kind of and can guarantees to make raw material fully to participate in reaction, and the apparatus for gas-phase synthesis of the preparation Nano powder of silicon nitride of the reaction zone that speeds away when making prepared product be in nano level.
For achieving the above object, the utility model has adopted following technical scheme: the apparatus for gas-phase synthesis of preparation Nano powder of silicon nitride, this device comprises that an inwall of being made by the graphite pipe fitting is the reaction chamber of Wen's structural cavity body, its outside is provided with the cooling chamber that is made of the interlayer sleeve pipe, the interlayer sleeve pipe is provided with to be convenient to the continuous interconnecting piece of plasma body generating unit, the upper end that is positioned at the reaction chamber chamber of interconnecting piece one end is communicated with the ion arc output channel of plasma producing apparatus, it is characterized in that: the upper end of described reaction chamber is provided with the carrier gas input channel, this path communicates with the carrier gas distribution device that the top of reaction chamber is provided with, and is provided with the carrier gas path that enters reaction chamber inside along the inwall of reaction chamber from top to bottom between this carrier gas distribution device and the reaction chamber.
As shown from the above technical solution, utilize the utility model can make full use of the energy that plasma generator provides, make raw material can carry out the reaction of maximum, provide the annular carrier gas from top to bottom by carrier gas distribution device chamber wall along reaction chamber in reaction chamber, under the dual function of an annular carrier gas and quick ion arc, in time carried when product particle is not in time grown up, and under the drive of high velocity air, entered cooling system, and on can the chamber wall attached to reaction chamber.
Summary of drawings
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is the A-A sectional view among Fig. 1;
Fig. 3 is the structural representation of raw material intake line.
Embodiment
Referring to Fig. 1, the apparatus for gas-phase synthesis of the disclosed preparation Nano powder of silicon nitride of the utility model comprises that an inwall of being made by graphite pipe fitting 10 is rendered as the reaction chamber 11 of Wen's structural cavity body, its outside is provided with the cooling chamber 21 that is made of interlayer sleeve pipe 20, can realize forced refrigeration, interlayer sleeve pipe 20 is provided with to be convenient to the continuous interconnecting piece 30 of plasma body generating unit, the upper end that is positioned at reaction chamber 11 chambers of interconnecting piece 30 1 ends is communicated with the ion arc output channel of plasma producing apparatus, also be provided with raw material intake line 60 on the reaction chamber 11, the upper end of described reaction chamber 11 is provided with carrier gas input channel 40, this path 40 communicates with the carrier gas distribution device 50 that the top of reaction chamber 11 is provided with, and is provided with the carrier gas path 51 that enters reaction chamber 11 inside along the inwall of reaction chamber 11 from top to bottom between this carrier gas distribution device 50 and the reaction chamber 11.Reaction chamber 11 of the present utility model adopts Wen's structure, and ionic current speed can be strengthened in its trunnion position, can reach supersonic speed, and cooling is quickened at the extension tube position, can effectively prevent grain growth like this.
Described carrier gas distribution device 50 comprise one communicate with carrier gas input channel 40 be positioned at ring-type carrier gas cavity 52 around the plasma inlet, ring-type carrier gas cavity 52 is communicated with carrier gas path 51.
Described carrier gas path 51 is to form by cooperating in uniform circular clearance mode between the chamber wall of cyclic disk 50 and reaction chamber 11.Can realize the top blast function by carrier gas distribution device 50, promptly have the N of certain pressure and flow
2Air-flow purges downwards along the chamber wall of reaction chamber 11 continuously, and the powder that reaction is generated in time flows to capturing device along pipeline.
Described raw material intake line 60 is provided with several, and be arranged in symmetrically on the contour cross section perpendicular to axial direction, raw material intake line 60 ends that extend in the reaction chamber 11 are positioned at the below that enters reaction chamber inlet 111 near the ion arc, gaseous ion concentration was even when the even layout of raw material intake line 60 made reaction, and the gas chemistry building-up process is even and stable.Raw material intake line 60 has four, transport to the below of reaction chamber inlet 111 between the outlet 61 of end and the horizontal plane with angle α, 0≤α≤60 ° wherein as shown in Figure 1, 2, 3, are designed to multiple structure with the outlet of end, can be level, downward-sloping, the concrete angle that tilts can have a plurality of, adapting to differing materials reaction process separately, when for example producing the silicon nitride nano powder, ammonia is the level input, SiCL
4Be the input of tilting, promptly the ammonia ion from top to bottom with SiCL
4The synthetic Si that generates of ion
3N
4According to the actual desired raw material gas of producing product, select corresponding feeding pipe, and according to the concrete processing parameter of producing the variant production reaction when determining temperature of reaction, utilize the specific rule of gradient of plasma arc temperature, to produce dissimilar products.
Adopt the scheme of on same contour cross section, evenly arranging raw material intake line 60 in the utility model, can significantly simplify the difficulty of processing of parts, and effectively improved the assembly technology and the layout of device.
Claims (5)
1. apparatus for gas-phase synthesis for preparing Nano powder of silicon nitride, this device comprises that an inwall of being made by graphite pipe fitting (10) is the reaction chamber (11) of Wen's structural cavity body, its outside is provided with the cooling chamber (21) that is made of interlayer sleeve pipe (20), interlayer sleeve pipe (20) is provided with to be convenient to the continuous interconnecting piece (30) of plasma body generating unit, the upper end that is positioned at reaction chamber (11) chamber of interconnecting piece (30) one ends is communicated with the ion arc output channel of plasma producing apparatus, also be provided with raw material intake line (60) on the reaction chamber (11), it is characterized in that: the upper end of described reaction chamber (11) is provided with carrier gas input channel (40), this path (40) communicates with the carrier gas distribution device (50) that the top of reaction chamber (11) is provided with, and is provided with between this carrier gas distribution device (50) and the reaction chamber (11) along the inwall of reaction chamber (11) and enters the inner carrier gas path (51) of reaction chamber (11) from top to bottom.
2. the apparatus for gas-phase synthesis of preparation Nano powder of silicon nitride according to claim 1, it is characterized in that: described carrier gas distribution device (50) comprise one communicate with carrier gas input channel (40) be positioned at ring-type carrier gas cavity (52) around the plasma inlet, ring-type carrier gas cavity (52) is communicated with carrier gas path (51).
3. the apparatus for gas-phase synthesis of preparation Nano powder of silicon nitride according to claim 1 and 2 is characterized in that: described carrier gas path (51) is to form by cooperating in the circular clearance mode between the chamber wall of cyclic disk (50) and reaction chamber (11).
4. the apparatus for gas-phase synthesis of preparation Nano powder of silicon nitride according to claim 1, it is characterized in that: described raw material intake line (60) is provided with several, and be arranged in symmetrically on the contour cross section perpendicular to axial direction, the end that extends the raw material intake line (60) in the reaction chamber (11) is positioned at the below that enters reaction chamber (11) inlet (111) near the ion arc.
5. the apparatus for gas-phase synthesis of preparation Nano powder of silicon nitride according to claim 4, it is characterized in that: raw material intake line (60) has four, transport to the below of reaction chamber inlet (111) between the outlet of end and the horizontal plane with angle α, wherein 0≤α≤60 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02264298 CN2571734Y (en) | 2002-09-09 | 2002-09-09 | Gas phase synthesizer for preparing nano siliconnitride powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02264298 CN2571734Y (en) | 2002-09-09 | 2002-09-09 | Gas phase synthesizer for preparing nano siliconnitride powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2571734Y true CN2571734Y (en) | 2003-09-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02264298 Expired - Lifetime CN2571734Y (en) | 2002-09-09 | 2002-09-09 | Gas phase synthesizer for preparing nano siliconnitride powder |
Country Status (1)
| Country | Link |
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| CN (1) | CN2571734Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103318857A (en) * | 2013-07-10 | 2013-09-25 | 石家庄经济学院 | Method for synthesizing silicon nitride nano ring by CVD (chemical vapor deposition) method |
-
2002
- 2002-09-09 CN CN 02264298 patent/CN2571734Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103318857A (en) * | 2013-07-10 | 2013-09-25 | 石家庄经济学院 | Method for synthesizing silicon nitride nano ring by CVD (chemical vapor deposition) method |
| CN103318857B (en) * | 2013-07-10 | 2015-11-25 | 石家庄经济学院 | A kind of method of CVD synthesizing silicon nitride nano-rings |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20071205 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |