CN2461012Y - Micro-mechanical optical switch made by (100) silicon slice - Google Patents

Micro-mechanical optical switch made by (100) silicon slice Download PDF

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Publication number
CN2461012Y
CN2461012Y CN 00249365 CN00249365U CN2461012Y CN 2461012 Y CN2461012 Y CN 2461012Y CN 00249365 CN00249365 CN 00249365 CN 00249365 U CN00249365 U CN 00249365U CN 2461012 Y CN2461012 Y CN 2461012Y
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China
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mechanical
micro
optical switch
mass
girder
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Expired - Fee Related
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CN 00249365
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Chinese (zh)
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李铁
王跃林
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Metallurgy of CAS
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Abstract

The utility model relates to a miniature mechanical light switch made of silicon wafers (100), which belongs to the field of light electronic devices. The utility model is composed of a frame 1, a mirror surface 2, a mass block 3, a cantilever beam 4, a V-shaped groove 5 and an electrode 6. The miniature mechanical light switch can be made into various switch arrays such as 1*1 arrays, 2*2 arrays, etc. The utility model has the characteristics of simple manufacturing process, convenient operation, convenient control, high repeated degree, etc. The utility model exerts important functions on full light network communication and on the process for installing fiber to homes of users.

Description

The micro-mechanical-optical switch of a kind of utilization (100) silicon wafer to manufacture
The utility model relates to the micro-mechanical-optical switch of a kind of utilization (100) silicon wafer to manufacture, relates to the micro-mechanical-optical switch that includes micro mirror and semi-girder of a kind of utilization (100) silicon wafer to manufacture or rather.Belong to field of optoelectronic devices.
Along with the growth at full speed of global traffic amount, form of service also becomes more diverse, and the image transmission is growing with treatment technology, and the Broadband Integrated Services Digital network of high-speed high capacity has become the development trend of modern communication networks.Utilize existing and fiber optic network that will lay to constitute jumbo all-optical network, realize that Fiber to the home, solve the information transmission bottleneck problem that causes owing to the electric treatment common objective that become international comprehensively.A major reason of restriction all-optical network development, being exactly that Fiber to the home needs a large amount of optoelectronic devices (as photoswitch, the joints of optical fibre, fiber coupler, optical multiplexer, optical branching device and optoisolator etc.), holding at high price of these devices, the user is difficult to accept.Photoswitch is one of Primary Component of consumption maximum in the passive photonic loop.Present mechanical optical switch can only be used in main line optical communication and some special occasions generally more than 1000 dollars, can't use at user network and the big wide field of light exchange equivalent.Micro-mechanical-optical switch can reduce cost significantly owing to adopt the manufacturing of mass technology, thereby plays a significant role in will in following all-optical network communication and Fiber to the home.Yet present micro-mechanical-optical switch main flow is for adopting moving or torsional mode specular light switch of deep reaction ion etching technology and surface micro fabrication techniques, and they exist complex process, the technological requirement height, and bearing accuracy is difficult to problems such as control.
The purpose of this utility model provides the micro-mechanical-optical switch of a kind of utilization (100) silicon wafer to manufacture, and this micro-mechanical-optical switch can be 1 * 2,2 * 2 ..., the multiple array of photoswitch of N * N (N>2).
The micro-machinery switch cellular construction that the utility model provides as shown in Figure 2, it is to be made of framework 1, minute surface 2, mass 3, semi-girder 4, V-shaped groove 5 and electrode 6 six parts.Its principle of work is: when 3 of electrode 6 and masses apply different static, 3 of electrode 6 and masses will produce attractive force, attract mass 3 to move downward, and make minute surface 2 withdraw from the optic fibre light path of V-shaped groove 5 location, realize the light path pass-through state; When 3 of electrode 6 and masses apply identical static, 3 of electrode 6 and masses will produce repulsive force, cause mass 3 to move upward, and make minute surface 2 enter the optic fibre light path of V-shaped groove 5 location, realize light path 90 degree deflections.
Further illustrate characteristics of the present utility model and progress below in conjunction with drawings and Examples.For illustrating conveniently, earlier accompanying drawing is done an explanation.
The micro-mechanical-optical switch 1 * 2,2 * 2 that Fig. 1 the utility model provides ... the structural representation of the multiple array switch of N * N (N>2).
2 * 2 micro-mechanical-optical switch structural drawing that Fig. 2 the utility model provides.The 2-1 side view, the 2-2 top view.
Two of mass 3 kinds of difformity synoptic diagram among Fig. 3 Fig. 2.3-1 is along (110) crystal orientation, and 3-2 is along (100 crystal orientation).
Six of semi-girder 4 kinds of difformity synoptic diagram among Fig. 4 Fig. 2.The single strip of 4-1, the two strips of 4-2, two kinds of two-fold stoplogs of 4-3 shape, two kind of four folded beam shape of 4-4.
1-framework among the figure, 2-minute surface, 3-mass, 4-semi-girder, 5-V shape groove, 6-electrode.
The architectural feature and the interdependence of each several part are described below:
1. framework 1 mainly plays support cantilever beam 4 and continuous mass 3 and minute surface 2 thereof, and forms V-shaped groove 5 thereon.1 * 2,2 * 2 switch situations, its structure can be for the continuous framework in four limits, and in N * N (N>2) situation, its structure can be decomposed into support cantilever beam 4 and support V-shaped groove 5 two parts.
2. minute surface 2 stands on the mass 3, and strict vertical with mass 3, becomes 45 to spend with (110) crystal orientation, for silicon chip<100〉crystal face.This minute surface directly generates through anisotropic etch for being mask by become 45 rectangles of spending or rectangle to add various special compensation figures with (110) crystal orientation, and its smooth finish is better, behind evaporation or the sputter gold film, can directly use as minute surface.
3. mass 3 is positioned under the minute surface 2, links to each other with semi-girder 4, and its thickness is identical with semi-girder 4, corrodes simultaneously with semi-girder 4 to form.Its shape can be square or rectangular, and both sides can be along (100) direction or (110) direction, as shown in Figure 3.
4. semi-girder 4 connects silicon frame 1 and mass 3, and its shape can be single strip 4-1, two strip 4-2, two-fold stoplog shape 4-3 and four folded beam shape 4-4 etc. as shown in Figure 4, and direction can be along (100) direction or (110) direction.
5.V shape groove 5 is the fiber orientation groove, it forms for the rectangle mask corrosion of getting (100) crystal orientation.
6. electrode 6 is positioned at the mass below for to be deposited on metal film on glass.
The micro-machinery switch of the utilization that the utility model provides (100) silicon wafer to manufacture, is fit to produce in batches so manufacture craft is simple because of adopting conventional bulk silicon technological.The processing step of its making is briefly described as follows:
(1) the two-sided oxidation of two throwing silicon chips, oxidated layer thickness are 200 nanometers to 2 micron;
(2) photoetching, corrode silicon dioxide, the earth silicon mask of formation semi-girder, mass and bottom surface cavity.
(3) anisotropic etch 3-50 micron forms semi-girder and mass.
(4) photoetching, corrode silicon dioxide are removed semi-girder and mass earth silicon mask.
(5) anisotropic etch goes out the bottom surface cavity, and height is at the 20-100 micron;
(6) the deoxidation film reoxidizes silicon chip;
(7) erosional surface reverse side photoetching, erode away micro mirror and V-type groove mask;
(8) erosional surface photoetching, erode away and need bonding face;
(9) with glass sputter, evaporation 100-200 nanometer Al film, erode away electrode;
(10) with silicon chip and glass bonding, condition is the 350-420 degree, voltage 800-1500 volt;
(11) anisotropic etch is to the silicon chip break-through;
(12) remove the SiO film;
(13) adopt sputter or evaporation coating method to steam gold to minute surface.
In sum, the micro-machinery switch that provides of the utility model has advantage and is:
(1) simple in structure, be easy to expansion, can be applicable to N * N (N>2) switch arrays;
It is convenient to control when (2) using, the repeatable accuracy height. Owing to adopt static or Electromagnetic Drive, cantilever beam
Be movable structure, the control of photoswitch is convenient, and the repeatable accuracy height has high practical value.
(3) technology is simple, and easy operating is fit to produce in batches.

Claims (10)

1. the micro-mechanical-optical switch of a utilization (100) silicon wafer to manufacture is characterized in that the unit light switch is to be made of framework (1), minute surface (2), mass (3), semi-girder (4), V-shaped groove (5) and electrode (6) six parts.
2. by the described micro-mechanical-optical switch of claim 1, it is characterized in that described framework (1) support cantilever beam (4) and the mass (3) and the minute surface (2) that link to each other and form V-shaped groove (5) thereon.
3. by the described micro-mechanical-optical switch of claim 1, it is characterized in that described minute surface (2) stands on the mass (3), and strict with it vertical, become 45 to spend with (110) crystal orientation, for silicon chip<100〉crystal face.
4. by the described micro-mechanical-optical switch of claim 1, it is characterized in that described mass (3) is positioned under the minute surface (2), link to each other that its thickness is identical with semi-girder (4) with semi-girder (4), its shape can be square or rectangular, and direction can be along (100) direction or (110) direction.
5. by the described micro-mechanical-optical switch of claim 1, it is characterized in that described semi-girder (4) connects silicon frame (1) and mass (3).
6. by the described micro-mechanical-optical switch of claim 1, it is characterized in that described V-shaped groove (5) is the fiber orientation groove.
7. by the described micro-mechanical-optical switch of claim 1, it is characterized in that described electrode (6) is positioned at mass (3) below.
8. by claim 1 or 2 described micro-mechanical-optical switchs, it is characterized in that described framework (1) is under 1 * 2,2 * 2 switch situations, its structure is the continuous frameworks in four limits, and under the N * N situation of N>2, its structure can be decomposed into support cantilever beam (4) and support V-shaped groove (5) two parts.
9. by claim 1 or 3 described micro-mechanical-optical switchs, it is characterized in that described minute surface (2) for being mask by become 45 rectangles of spending or rectangle and various special compensation figure with (110) crystal orientation, directly generates through anisotropic etch.
10. by claim 1 or 5 described micro-mechanical-optical switchs, it is characterized in that shape or single strip or two strip or the two-fold stoplog shape or the four folded beam shapes of described semi-girder (4), direction can be along (100) direction or (110) direction.
CN 00249365 2000-09-22 2000-09-22 Micro-mechanical optical switch made by (100) silicon slice Expired - Fee Related CN2461012Y (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100375914C (en) * 2003-09-30 2008-03-19 日本航空电子工业株式会社 Micro-optic device and method of manufacturing same
CN100422070C (en) * 2005-08-12 2008-10-01 中国科学院上海微系统与信息技术研究所 Mobile microstructure cosupported by silicon and silicon dioxide, and its production method
WO2021068447A1 (en) * 2019-10-08 2021-04-15 浙江大学 Silicon-based waveguide mems optical switch with ultra-large bandwidth

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100375914C (en) * 2003-09-30 2008-03-19 日本航空电子工业株式会社 Micro-optic device and method of manufacturing same
US7515783B2 (en) 2003-09-30 2009-04-07 Japan Aviation Electronics Industry Limited Micro-optic device and method of manufacturing same
US7582497B2 (en) 2003-09-30 2009-09-01 Japan Aviation Electroncis Industry Limited Method of manufacturing micro-optic device
CN100422070C (en) * 2005-08-12 2008-10-01 中国科学院上海微系统与信息技术研究所 Mobile microstructure cosupported by silicon and silicon dioxide, and its production method
WO2021068447A1 (en) * 2019-10-08 2021-04-15 浙江大学 Silicon-based waveguide mems optical switch with ultra-large bandwidth
US11598921B2 (en) 2019-10-08 2023-03-07 Zhejiang University Ultra-broadband silicon waveguide micro-electro-mechanical systems (MEMS) photonic switch

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