CN2450812Y

CN2450812Y - Low-induction bus bar device for inverter

Info

Publication number: CN2450812Y
Application number: CN00225840U
Authority: CN
Inventors: 李小红; 忻力; 荣智林; 陈燕平; 翁星方
Original assignee: ZHUZHOU ELECTRIC LOCOMOTIVE IN
Current assignee: CSR Zhuzou Institute Co Ltd
Priority date: 2000-10-26
Filing date: 2000-10-26
Publication date: 2001-09-26
Anticipated expiration: 2010-10-26

Abstract

The utility model relates to a low induction bus bar apparatus for an inverter. A conducting copper column with a positioning action sequentially stacks an outer insulating layer, a positive copper bar, a middle insulating layer, a negative copper bar and another outer insulating layer into a multiple-layer stacking ody. An insulating chock is added between the conducting copper column and the bus bar, and a half solidifying piece for binding is arranged between two adjacent layers. A plate body positioned at the interval between two poles of an IGBT on the insulating layers is provided with a groove for increasing the creeping distance. The low induction bus bar has simple and compact structure and conforms to the EN50155 requirement. The low induction bus bar is suitable for the working environment occasions with the working voltage higher than 1500 VDC.

Description

A kind of inverter low-inductance bus device

The utility model relates to a kind of inverter low-inductance bus device, belongs to inverter auxiliary member class.

In, in the engineering design of big capacity IGBT inverter, the bus of rationally arranging, reduce distributed inductance and exempt from for protection IGBT element that punctured by transient overvoltage extremely important.Therefore, seek to have become one of key technology of IGBT inverter main circuit design less than the structural design and the manufacture method of 100nH low-inductance bus.Existing various low-inductance bus (Busbar) is though can satisfy the basic demand of IGBT converter main circuit structural design, but also have the following disadvantages: 1, some low-inductance bus are because structural design is too simple and crude, therefore only can satisfy the use of low pressure occasion, but when operating voltage is higher than 1500VDC between busbar, be difficult to then ensure that inverter can long-time reliably working.Though 2, another kind of low-inductance bus compact and reasonable in design, profile is also more attractive in appearance, but the method for making these low-inductance bus is more complicated often, not only need special processing mold, and raise to close when using at high pressure and can guarantee on the IGBT element that for guaranteeing that it is installed to C, E two interpolars have sufficiently long creepage distance, often have to big change is done in the design of low-inductance bus, even reduce the basic principle of the structural design of low-inductance bus: make both shapes of positive and negative busbar and area differ bigger.Thereby cause the distributed inductance of low-inductance bus to increase, but therefore increase the difficulty of main circuit design.

The purpose of this utility model: aim to provide a kind of new low-inductance bus project organization, overcome the above-mentioned defective that existing low-inductance bus exists, compact conformation not only, appearance looks elegant and also make also convenient.

Above-mentioned purpose is realized by following technical proposals:

This inverter is made up of positive copper bar (2), negative copper bar (3), conduction copper column (5) and intermediate insulating layer (1) and outer insulation (4) with the low-inductance bus device, it is characterized in that: the outer insulation (4) that A, described this busbar will be shelved in regular turn by the conduction copper column with positioning action (5), positive copper bar (2), intermediate insulating layer (1), negative copper bar (3) and the stacked multilayer stack that forms of outer insulation (4).Setting up insulation chock (6) between B, described conduction copper column (5) and the busbar; Between adjacent two layers, be provided with the prepreg (7) of bonding effect.Be positioned at the C of IGBT on C, the described outer insulation (4), the plate body in interval, E the two poles of the earth is provided with groove (8).Described groove (8) quantity is advisable its width≤2mm with 2-5.

According to this low-inductance bus of above conceptual design, its advantage is a compact conformation, and is simple.And increased the creepage distance of low-inductance bus effectively, thereby make it can adapt to the above operating voltage of inverter 1500VDC.

Following structure accompanying drawing further describes the utility model, and provides embodiment.

Accompanying drawing 1 is the utility model structural representation;

Accompanying drawing 2 is that AA in the accompanying drawing 1 is to cut-away view.

Among the figure: the 1-intermediate insulating layer, the positive copper bar of 2-, 3-bears copper bar, 4-outer insulation, 5-conduction copper column, the 6-chock that insulate, 7-prepreg, 8-groove.

Above-mentioned this low-inductance bus, following electrolysis copper coin or the aluminium sheet of its positive and negative busbar 2mm made, intermediate insulating layer is made up of epoxy plate FR4 below the 1.5mm or flexible substrate insulating material such as (as LPET-FR), and outer insulation is made up of the epoxy plate FR4 below the 2mm; Being electrically connected all between low-inductance bus and the IGBT element undertaken by the conduction copper column that is riveted on the positive and negative busbar; Between every adjacent two layers, stacking the prepreg (7) that plays cementation; And the while has additional insulation chock (6) again between busbar and conduction copper column.Simultaneously, main a bit, for after increasing low-inductance bus and being installed on the IGBT element, the creepage distance of C, E two interpolars is positioned at IGBT on outer insulation board (layer) interval, the two poles of the earth mills out the little groove (8) of some, this little groove generally can have 2-5, and groove width is not more than 2mm usually.

Above-mentioned this low-inductance bus device, owing to structurally take above several measures to make the insulation chock of this lamination shape bus-bar device by setting up, the characteristic that gummosis is arranged of prepreg institute tool, make abundant bonding being integral of chock and the busbar that will fill, thereby effectively solved the current-sharing requirement of busbar and the contradiction that creepage distance will mate.More, the creepage distance of C, E two interpolars is expanded accordingly, thereby made this utility model invention more be applicable to the occasion use of operating pressure greater than 1500VDC owing to some small recesses (8) of on the outer insulation (4) of busbar C, E two interpolars, setting up.

Claims

1, a kind of inverter is made up of positive copper bar (2), negative copper bar (3), conduction copper column (5) and intermediate insulating layer (1) and outer insulation (4) with the low-inductance bus device, it is characterized in that:

A, described this busbar are incited somebody to action stacked in regular turn outer insulation (4), positive copper bar (2), intermediate insulating layer (1), negative copper bar (3) and the stacked multilayer stack that forms of outer insulation (4) by the conduction copper column with positioning action (5); And between conduction copper column (5) and busbar, setting up insulation chock (6);

B, between adjacent two layers, be provided with the prepreg (7) of bonding effect;

Be positioned at the C of IGBT on C, the described outer insulation (4), the plate body in interval, E the two poles of the earth is provided with groove (8).

2,, it is characterized in that described little groove (8) quantity is advisable its width≤2mm with 2-5 according to a kind of inverter low-inductance bus device of claim 1 art.