CN2432569Y - Optical detector - Google Patents

Optical detector Download PDF

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Publication number
CN2432569Y
CN2432569Y CN 00220826 CN00220826U CN2432569Y CN 2432569 Y CN2432569 Y CN 2432569Y CN 00220826 CN00220826 CN 00220826 CN 00220826 U CN00220826 U CN 00220826U CN 2432569 Y CN2432569 Y CN 2432569Y
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CN
China
Prior art keywords
utility
model
photoelectric commutator
photoelectric
optical detector
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Expired - Fee Related
Application number
CN 00220826
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Chinese (zh)
Inventor
吴浩宇
郑小兵
章骏平
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Anhui Institute of Optics and Fine Mechanics of CAS
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Anhui Institute of Optics and Fine Mechanics of CAS
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Priority to CN 00220826 priority Critical patent/CN2432569Y/en
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Publication of CN2432569Y publication Critical patent/CN2432569Y/en
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Abstract

The utility model discloses an optical detector which comprises photoelectric converters facing to the incident light. The photoelectric converters are electrically connected with a current and voltage transformation circuit. Particularly, the number of the photoelectric converter is more than three, and an angle of 90 DEG is formed between every two photoelectric converters, and the last photoelectric converter and the former photoelectric converter are arranged according to 45 DEG. Actually, the utility model is a light trap; when the utility model is used, the uncertainty is less than 3/10000, and the utility model can greatly decreases the problem that the surface reflectivity of the photoelectric converters can cause the uncertain factor of the radiation measurement to be increased because the incident angle has different changes and the polarization sensitivities, and the polarization sensitivity of the utility model is only 0.00142 %.

Description

Optical detector
The utility model relates to a kind of optical detector.
People are in order to solve modern high-precision optical radiation measurement problem, blackbody radiator commonly used or absolute radiometer, the uncertainty that these devices can reach, usually has only ppt, its accuracy that can reach can not meet the demands in a lot of applications, though available low temperature (liquid helium) absolute radiometer reaches the highest present uncertainty, be about 2/10000ths, but its high price more than 100,000 dollars and complicated operational process and high operating cost, its widespread use is greatly limited, and usually just the first grade standard as a kind of radiant quantity is used.Introduced a kind of optical detector in volume the 5th phase " theoretical analysis and the experimental result of the silicon photoelectric diode self calibration technology " literary composition September nineteen eighty-two the 2nd at " optics journal " magazine, it is to adopt the single piece of silicon optical diode that is electrically connected with current-voltage conversion circuit to add that preposition light path system constitutes.Though it has obtained bigger breakthrough on convenience of using and accuracy; But, this detector is because the intrinsic character of surface of single piece of silicon optical diode, also promptly when light beam normal incidence is between miter angle incident, its surface reflectivity has the variation of 1-5%, the beam incident angle of measuring makes if can not be consistent with the incident angle of calibration, will the energy loss that cause be also different because of the difference of reflection, thus make the precise decreasing of measurement and do not reach modern high precision ray radiation Testing requirement.
The purpose of this utility model provides a kind of good and cheap, optical detector that measuring accuracy is high.
For achieving the above object, the utility model comprises towards the photoelectric conversion of incident light device, described photoelectric commutator is electrically connected with current-voltage conversion circuit, and particularly photoelectric commutator is to be 90 degree more than three and between per two, and last a slice a slice preceding with it is 45 degree and is provided with.
As further improvement of the utility model, photoelectric commutator is silicon photo diode array or indium gallium arsenic photomultiplier; Photoelectric commutator is three.
After adopting such structure, owing to used at least three and the photoelectric commutator that is provided with by certain structure each other, so make according to the mirror reflection principle and to incide first reflected light on the photoelectric commutator and get to second photoelectric commutator, reflected light on second photoelectric commutator is got on the 3rd photoelectric commutator again, turn back on second photoelectric commutator and the reflected light on the 3rd photoelectric commutator follows Yuan Lu again, and get to again on first photoelectric commutator at the reflected light that produces on second photoelectric commutator thus.Like this, the part light that loses because of reflection on every photoelectric commutator will be received by a slice photoelectric commutator under it, and the like.Principle is as follows.
In the monolithic photoelectric commutator, have:
I Ph=η (λ e/hc) then P in this structure, have: I Ph=[η 1(1-ρ 1)+η 2ρ 2(1-ρ 1)+η 3ρ 1ρ 2(1-ρ 3)+η 2ρ 1ρ 2ρ 3(1-
ρ 2)+η 1ρ 1ρ 2ρ 2ρ 3(1-ρ 1)] (λ e/hc) P wherein: I fBe photogenerated current; P is an incident optical power; λ is a lambda1-wavelength; H:Plank
Constant; C: vacuum light speed; η 1, η 2, η 3Be respectively the internal quantum efficiency of 1#, 2#, 3# photoelectric commutator; ρ 1, ρ 2Be the reflectivity of incident angle 1#, 2# when being 45 °, ρ 3The reflectivity of 3# during for vertical incidence.
In order to see (being the photoelectric commutator of same kind in fact) η easily clearly owing to what use 1, η 2, η 3Basic identical, can think approx that they equate, for ρ 1, ρ 2, ρ 3Think that also they equate that then following formula can be reduced to:
I ph=η(1-ρ 5)(λe/hc)·P
So just form a light trapping, consequently be equivalent to greatly reduce the surface reflectivity of monolithic photoelectric commutator.Through Performance Detection, reflectivity than single piece of silicon photodiode (20~30%) two orders of magnitude that descended, with this photoradiometer measuring light power, can be less than 3/10000ths uncertainty less than 2/1000ths during the face of the accepting normal incidence of this radiation detector.Simultaneously, this three-chip type structure also can reduce the polarization sensitivity of single device to radiation, the surface reflectivity that promptly reduces the photoelectric commutator sensitive detection parts to greatest extent causes that because of the difference of incident angle changes with polarization sensitivity radiometric uncertain factor increases, and polarization sensitivity only is 0.00142%.
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Fig. 1 is a kind of basic structure synoptic diagram of the present utility model.
Optical detector shown in Figure 1 is made of three photoelectric commutators 2.Wherein first is to be provided with towards being 90 degree between 1, the second and first of incident light, and the 3rd is 45 degree and is provided with second.Every photoelectric commutator 2 is all selected silicon photodiode array for use, and every all is electrically connected with current-voltage conversion circuit 3.
During use, only need can survey required electric signal by current-voltage conversion circuit output with first photoelectric commutator 2 towards incident light 1.

Claims (3)

1. optical detector, comprise photoelectric commutator (2) towards incident light (1), described photoelectric commutator (2) is electrically connected with current-voltage conversion circuit (3), it is characterized in that photoelectric commutator (2) is to be 90 degree more than three and between per two, is 45 degree and is provided with between last a slice and its preceding a slice.
2. detector according to claim 1 is characterized in that photoelectric commutator (2) is silicon photo diode array or indium gallium arsenic photomultiplier.
3. detector according to claim 1 and 2 is characterized in that photoelectric commutator (2) is three.
CN 00220826 2000-06-23 2000-06-23 Optical detector Expired - Fee Related CN2432569Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 00220826 CN2432569Y (en) 2000-06-23 2000-06-23 Optical detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 00220826 CN2432569Y (en) 2000-06-23 2000-06-23 Optical detector

Publications (1)

Publication Number Publication Date
CN2432569Y true CN2432569Y (en) 2001-05-30

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CN 00220826 Expired - Fee Related CN2432569Y (en) 2000-06-23 2000-06-23 Optical detector

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CN (1) CN2432569Y (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1934430B (en) * 2004-03-18 2010-09-29 浜松光子学株式会社 Photodetector
CN103278237A (en) * 2013-05-30 2013-09-04 中国电子科技集团公司第四十一研究所 Device and method for optical radiation calibration
CN106018274A (en) * 2016-05-16 2016-10-12 天津优可信科技有限公司 Device for absorbing transmission light during turbidity measurement
CN113418600A (en) * 2021-06-21 2021-09-21 中国电子科技集团公司第四十一研究所 Optical fiber type short wave infrared light trap detector and detection method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1934430B (en) * 2004-03-18 2010-09-29 浜松光子学株式会社 Photodetector
US7989753B2 (en) 2004-03-18 2011-08-02 Hamamatsu Photonics K.K. Photodetector having wide dynamic range and low temperature dependence
CN103278237A (en) * 2013-05-30 2013-09-04 中国电子科技集团公司第四十一研究所 Device and method for optical radiation calibration
CN103278237B (en) * 2013-05-30 2015-03-25 中国电子科技集团公司第四十一研究所 Device and method for optical radiation calibration
CN106018274A (en) * 2016-05-16 2016-10-12 天津优可信科技有限公司 Device for absorbing transmission light during turbidity measurement
CN113418600A (en) * 2021-06-21 2021-09-21 中国电子科技集团公司第四十一研究所 Optical fiber type short wave infrared light trap detector and detection method

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C19 Lapse of patent right due to non-payment of the annual fee
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