CN2420808Y - Ceramic glaze direct heatiing far infrared radiator device - Google Patents
Ceramic glaze direct heatiing far infrared radiator device Download PDFInfo
- Publication number
- CN2420808Y CN2420808Y CN 00227750 CN00227750U CN2420808Y CN 2420808 Y CN2420808 Y CN 2420808Y CN 00227750 CN00227750 CN 00227750 CN 00227750 U CN00227750 U CN 00227750U CN 2420808 Y CN2420808 Y CN 2420808Y
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- glaze layer
- type far
- infrared radiation
- current
- radiation device
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- Expired - Fee Related
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Abstract
The utility model relates to a ceramic glaze direct heating type far infrared radiating device, which comprises a ceramic basal body 1 of high intensity, a current-conducting glaze layer 2 sintered on the surface of the basal body 1 by high temperature, an insulating colored glaze layer 3 sintered above the current-conducting glaze layer 2 by high temperature and a silver electrode 4 positioned on the two end parts of the current-conducting glaze layer 2 and electrically connected with the current-conducting glaze layer 2. The current-conducting glaze layer 2 and the insulating colored glaze layer 3 can not drop off from the ceramic basal body 1 easily. The utility model has the advantages of high efficiency of thermal conversion, fast thermal response time, long service life, no pollution, wide power supply voltage adapting range and safety. The ceramic glaze direct heating type far infrared radiating device can be used for industries, agriculture, appliances, automobiles, medical appliances, etc.
Description
The utility model relates to a kind of parts of electric calorifie installation, relates in particular to a kind of directly-heated type far-infrared radiation device.
Far-infrared radiation device is a kind of electrothermal device of extensive use during people produce, live.For a long time, the far-infrared electric device all is to adopt the heater-type electric heating element as thermal source, as adopt the quartz crystal pipe as infrared emitter, also have and adopt earthenware as infrared emitter, but must twine resistance wire and on ceramic matrix, be coated with one deck SIC or metal M GO on the surface of earthenware.All there are shortcomings such as life-span weak point, poor reliability, insulation property are good inadequately in these two kinds of infrared emitter, and in use also can produce some ill-effects to skin, play black stripe etc. as skin.And the directly-heated type far-infrared radiation device is compared with traditional heater-type device, has the utilization rate of electrical height, and long service life allows the amplitude of operating voltage big, can be widely used in the industries such as household electrical appliance, industrial baking, oven dry.
The purpose of this utility model is to avoid above-mentioned the deficiencies in the prior art part and a kind of thermal conversion efficiency height, long service life, suitable supply voltage wide ranges, safe and reliable energy-saving enamel directly-heated type far-infrared radiation device is provided.
The purpose of this utility model can realize by taking following technical measures: design a kind of enamel directly-heated type far-infrared radiation device, comprise ceramic matrix, at the conductive layer of matrix surface and the metal electrode that is positioned at the conductive layer both ends and is electrically connected with conductive layer, described conductive layer is the semiconducting glaze layer with high radiant rate of high temperature sintering on the ceramic matrix surface, at the both ends of semiconducting glaze layer one circle metal electrode is arranged respectively, metal electrode is electrically connected with the control circuit of the equipment that uses enamel directly-heated type far-infrared radiation device.
The drawing of accompanying drawing is described as follows:
Fig. 1 is the structural representation of the utility model enamel directly-heated type far-infrared radiation device;
Fig. 2 is the sectional drawing of several Common Shape of the utility model enamel directly-heated type far-infrared radiation device.
Below in conjunction with accompanying drawing most preferred embodiment of the present utility model is described in further detail.
As shown in Figure 1, the utility model enamel directly-heated type far-infrared radiation device comprises the conductive layer 2 on high-intensity ceramic matrix 1, matrix 1 surface and the metal electrode 4 that is positioned at conductive layer 2 both ends and is electrically connected with conductive layer 2, and the metal electrode 4 at described semiconducting glaze layer 2 two ends is a silver electrode; Conductive layer 2 is the semiconducting glaze layer with high radiant rate of high temperature sintering on ceramic matrix 1 surface, high temperature sintering one deck insulation color glaze layer 3 again on the surface of this semiconducting glaze layer 2.
The utility model enamel directly-heated type far-infrared radiation device is realized by following technological process: in the ceramic matrix 1 surperficial glazing of 1500 ℃ of high-temperature firings, through 1300 ℃ surface glaze layer sintered into again and have semiconducting glaze layer 2 high radiant rate, that be connected with end silver electrode 4, high temperature sintering one deck insulation color glaze layer 3 again on semiconducting glaze layer 2 then, the cold insulation resistance of this insulation color glaze layer 3 is not less than 2 megaohms, and its hot insulation resistance is not less than 0.5 megaohm; The error that the outward appearance fundamental curve allows is as follows: be 0.5% of length overall below 200 millimeters; 200～500 millimeters is 0.7% of length overall; It more than 500 millimeters 0.8% of length overall.
We can be according to the different environments for use and the condition of far-infrared radiation device, and described ceramic matrix 1 is made into as shown in Figure 2 hollow tubular (a), pole shape (c) or tabular (b).
Owing to adopt above-mentioned process and unique prescription, with traditional all kinds of infrared radiation devices relatively, the thermal response time of the utility model enamel directly-heated type far-infrared radiation device is fast, electric conversion efficiency height, normal direction whole radiation rate height; Semiconducting glaze layer 2, insulation glaze layer 3 and silver electrode 4 combine firmly never drop-off with ceramic matrix 1; Can use the AC and DC power supply.Through the test of national infrared detection center, its spectral radiance reaches 0.91, and useful life is much larger than the national standard requirement.Because outer surface is coated with insulation glaze layer 3, this product safety and reliability can be widely used in industries such as industry, agricultural, chemical industry, light industry, electromechanics, household electrical appliances, automobile, timber processing, food, medicine equipment.
Compared with prior art, the utility model ceramic glaze direct heatiing far infrared radiator has following excellent Point: thermal conversion efficiency height, long service life, suitable supply voltage wide ranges, safe and reliable.
Claims (5)
1. enamel directly-heated type far-infrared radiation device comprises ceramic matrix (1), at the conductive layer (2) on this matrix (1) surface and the metal electrode (4) that is positioned at conductive layer (2) both ends and is electrically connected with conductive layer (2), it is characterized in that:
Described conductive layer (2) is the semiconducting glaze layer with high radiant rate of high temperature sintering on ceramic matrix (1) surface.
2. enamel directly-heated type far-infrared radiation device according to claim 1 is characterized in that: high temperature sintering one deck insulation color glaze layer (3) again on the surface of described semiconducting glaze layer (2).
3. enamel directly-heated type far-infrared radiation device according to claim 2 is characterized in that: the cold insulation resistance of described insulation color glaze layer (3) is not less than 2 megaohms, and its hot insulation resistance is not less than 0.5 megaohm.
4. enamel directly-heated type far-infrared radiation device according to claim 1 is characterized in that: described ceramic matrix (1) is hollow tubular, pole shape or tabular.
5. enamel directly-heated type far-infrared radiation device according to claim 1 is characterized in that: the metal electrode (4) at described semiconducting glaze layer (2) two ends is silver electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00227750 CN2420808Y (en) | 2000-03-29 | 2000-03-29 | Ceramic glaze direct heatiing far infrared radiator device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00227750 CN2420808Y (en) | 2000-03-29 | 2000-03-29 | Ceramic glaze direct heatiing far infrared radiator device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2420808Y true CN2420808Y (en) | 2001-02-21 |
Family
ID=33591337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00227750 Expired - Fee Related CN2420808Y (en) | 2000-03-29 | 2000-03-29 | Ceramic glaze direct heatiing far infrared radiator device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2420808Y (en) |
-
2000
- 2000-03-29 CN CN 00227750 patent/CN2420808Y/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHANNAITE ELECTROTHERMAL MATERIAL TECHNOLOGY CO., Free format text: FORMER NAME OR ADDRESS: XILI ELECTRICAL APPLIANCES CO. Free format text: NO CO-PATENTEE; FORMER NAME OR ADDRESS: HUANG ZHIMING |
|
| CP03 | Change of name, title or address |
Address after: 518055, six, East, 5, North District, Nanshan District hi tech Industrial Park, Shenzhen Patentee after: Shenzhen Sunlight Electrothermal Material Technology Co., Ltd. Address before: 518055 Shenzhen Nanshan District City Xili Tong Lang with rich industrial city Co-patentee before: Huang Zhiming Patentee before: Shenzhen City Xili Electrical Appliance Co. Ltd. |
|
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |