CN2347274Y - Inner-connected weak light non-crystal silicon photocell - Google Patents
Inner-connected weak light non-crystal silicon photocell Download PDFInfo
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- CN2347274Y CN2347274Y CN98200201U CN98200201U CN2347274Y CN 2347274 Y CN2347274 Y CN 2347274Y CN 98200201 U CN98200201 U CN 98200201U CN 98200201 U CN98200201 U CN 98200201U CN 2347274 Y CN2347274 Y CN 2347274Y
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- electrode
- amorphous silicon
- transparency electrode
- back electrode
- inline
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The utility model relates to an inner-connected weak light type amorphous silicon photocell. The utility model is composed of a glass basis (1), a transparent electrode (2), an amorphous silicon layer (3) and a back electrode (4) for electrocondution slurry, wherein, the transparent electrode (2) is made of an ITO or a tin dioxide transparency conductive film; the transparent electrode (2) is connected with the back electrode (4) for the electrocondution slurry through a channel on the amorphous silicon layer; the back electrode on the amorphous silicon layer is made by the electrocondution slurry. Because the back electrode is made of the electrocondution slurry, the amorphous silicon photocell has the characteristics of good consistency of the appearance and stable electrical property.
Description
The utility model relates to non-crystalline silicon photocell, particularly a kind of inline dyssophotic non-crystalline silicon photocell.
Known inline non-crystalline silicon photocell, its back electrode adopt aluminium film side to become, because the imperfection of manufacture craft causes its unsteadiness that influences the non-crystalline silicon photocell electrical property, and the battery outward appearance consistency that reverberation causes is poor.
The purpose of this utility model is to provide a kind of manufacturing process simple, outward appearance high conformity, the inline dyssophotic non-crystalline silicon photocell of electric performance stablity.
The purpose of this utility model realizes by following method:
Key technology of the present utility model is that the back electrode that adopts electrocondution slurry to make has replaced former known aluminium film back electrode.
The inline dyssophotic non-crystalline silicon photocell of the utility model is made of glass substrate (1) transparency electrode (2) amorphous silicon film (3) back electrode (4).Described transparency electrode (2) adopts ITO or electrically conducting transparent stannic oxide film to make.As shown in Figure 2, for the non-crystalline silicon photocell transparency electrode figure of being made up of 4 element cells, being made up of 4 rectangle nesa coatings, is that the raceway groove of d separates by width between the adjacent transparent electrode, guarantees reliable electric insulation.Described amorphous silicon layer (3), evenly cover glass substrate and above the transparency electrode, and forming the isolation channel that width penetrates the straight line raceway groove and is parallel to transparency electrode less than 0.4mm at a distance of position for a with each equidirectional one side of cell transparent electrode, promptly be formed on the straight line ditch (5) of same direction and transparency electrode isolation channel dislocation, and expose nesa coating.Accompanying drawing 3 is the amorphous silicon film of the non-crystalline silicon photocell be made up of 4 unit.Described back electrode (4) is made by electrocondution slurry, can select conductive carbon cream, and materials such as silver slurry, copper slurry are made.Each unit back electrode figure is a rectangle, and it is parallel with the amorphous silicon raceway groove on one side, and covers the amorphous silicon raceway groove, as shown in Figure 4, is the back electrode figure of the non-crystalline silicon photocell of 4 unit compositions, is made up of 5 back electrode pieces.From first left is fillet shape, and cover the shielding wire raceway groove of transparency electrode and amorphous silicon, form battery extraction electrode positive pole, 2nd, 3,4 back electrodes are big rectangle, cover transparency electrode shielding wire and amorphous silicon raceway groove (5) equally, the 5th back electrode is formed on the 4th the transparency electrode figure, forms the negative pole of battery extraction electrode, each back electrode interbody spacer distance is b, and guarantees reliable electric insulation.This back electrode is connected with transparency electrode by the amorphous silicon raceway groove.The transparency electrode of according to said method making, amorphous silicon and back electrode have promptly formed the inline dyssophotic non-crystalline silicon photocell of three raceway groove mutual dislocation realization element cell coupled in series.
Advantages such as the electrocondution slurry that back electrode adopted of the inline dyssophotic non-crystalline silicon photocell of the utility model has good conductivity, and it is low that adhesion strength reaches reflectivity by force, anti-aging.
The inline dyssophotic non-crystalline silicon photocell of the utility model can be made up of m element cell, and wherein m is the positive integer except that 1.
The inline dyssophotic non-crystalline silicon photocell of the utility model, owing to adopt electrocondution slurry to make back electrode, and have electric performance stablity, the advantage of outward appearance high conformity.Simultaneously, its manufacturing process is simple, raw material, and equipment investment is little, thereby has reduced manufacturing cost.
Below in conjunction with accompanying drawing and with reference to specific embodiment, the utility model is described in further detail.
Accompanying drawing:
Fig. 1. be the inline dyssophotic non-crystalline silicon photocell of the utility model section figure.
1-glass among the figure, 2-transparency electrode, 3-amorphous silicon, 4-back electrode, 5-amorphous silicon layer raceway groove
Fig. 2. be the inline low light level non-crystalline silicon photocell of the utility model transparency electrode schematic diagram.The figure bend partly is a transparency electrode.
Fig. 3. be the inline low light level non-crystalline silicon photocell of the utility model amorphous silicon layer schematic diagram.The figure bend partly is an amorphous silicon.
Fig. 4. be the inline low light level non-crystalline silicon photocell of the utility model back electrode schematic diagram.The figure bend partly is a back electrode.
Embodiment 1:
Contrast Fig. 1, substrate of glass wherein (1) is that the ultra-thin glass of 1.1mm is made by thickness, physical dimension is 12 * 30 square millimeters, depositing a layer thickness at the surface sputtering of this substrate of glass is 0.01 μ mITO nesa coating, with etching method this nesa coating is made transparency electrode (2) then, and guarantee electric insulation between each cell electrode.Utilizing the electric glow discharge method deposit thickness again in above-mentioned transparency electrode and substrate is the PIN type amorphous silicon membrane (3) of 0.5 μ m; and carving as shown in Figure 3 straight line with laser at this amorphous silicon membrane, to see through channel width be 0.15mm; then; on the substrate of as above making, adopt the silk-screen method that the electrocondution slurry back electrode is produced on the amorphous silicon film; back electrode is covered on the amorphous silicon raceway groove; and electric insulation between assurance unit back electrode; so far promptly form inline dyssophotic non-crystalline silicon photocell with structural configuration shown in Figure 1; on the substrate of as above making, stamp protective paint more at last; character, extraction electrode and obtain finished product.
Photocell is made up of 4 element cells in the present embodiment.Embodiment 2:
The modification of the foregoing description 1, the substrate of glass thickness in the present embodiment still are 1.1mm.It is of a size of 25 * 10 square millimeters, the transparency electrode on it (2), amorphous silicon film (3), electrocondution slurry back electrode (4), protective paint, character, the making of extraction electrode etc. and figure all with the foregoing description 1 in identical, promptly obtain finished product.
Photocell is made up of 4 element cells in the present embodiment.
Claims (4)
1. inline dyssophotic non-crystalline silicon photocell, constitute by substrate of glass (1) transparency electrode (2) amorphous silicon film (3) and back electrode (4), it is characterized in that: described transparency electrode (2) is made by ITO or electrically conducting transparent stannic oxide film, each cell transparent electrode pattern is identical rectangle, be that the raceway groove of d separates and guarantees mutually insulated by width between each adjacent cells transparency electrode, described amorphous silicon film (3) is formed on the transparency electrode and evenly covers on the substrate of glass, with the transparency electrode shielding wire on the same direction of b and the position of parallel shielding wire form and penetrate the amorphous silicon raceway groove, expose transparency electrode; Described back electrode (4) is made by electrocondution slurry, as conduct electricity carbon paste, silver slurry or copper slurry etc., the back electrode figure is a rectangle, battery back electrode unit number has more one than transparency electrode unit number, this of having more is formed on the limit and draws positive pole as battery, remaining back electrode identical with the transparency electrode number is identical rectangle, individual between all adjacent back electrode unit at a distance of being a and keeping insulation, insulated trench and amorphous silicon raceway groove are the e distance apart, and remain on the direction opposite with the transparency electrode shielding wire, so promptly form three isolated grooves that mutual dislocation is parallel of (4) three layers of transparency electrode (2) amorphous silicon (3) back electrodes.
2. inline dyssophotic non-crystalline silicon photocell as claimed in claim 1, it is characterized in that: described back electrode is made by electrocondution slurry; As conduct electricity carbon paste, silver slurry, copper slurry etc.
3. inline as claimed in claim 1 or 2 dyssophotic non-crystalline silicon photocell is characterized in that: described inline dyssophotic non-crystalline silicon photocell is made up of m battery unit, and wherein m is the positive integer except that 1.
4. inline as claimed in claim 1 or 2 dyssophotic non-crystalline silicon photocell is characterized in that: described amorphous silicon film channel width is not more than 0.4mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98200201U CN2347274Y (en) | 1998-01-05 | 1998-01-05 | Inner-connected weak light non-crystal silicon photocell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98200201U CN2347274Y (en) | 1998-01-05 | 1998-01-05 | Inner-connected weak light non-crystal silicon photocell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2347274Y true CN2347274Y (en) | 1999-11-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98200201U Expired - Fee Related CN2347274Y (en) | 1998-01-05 | 1998-01-05 | Inner-connected weak light non-crystal silicon photocell |
Country Status (1)
| Country | Link |
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| CN (1) | CN2347274Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347097A (en) * | 2010-08-04 | 2012-02-08 | 珠海格力电器股份有限公司 | ITO (Indium Tin Oxide) thin film and transparent touch key provided with same |
-
1998
- 1998-01-05 CN CN98200201U patent/CN2347274Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347097A (en) * | 2010-08-04 | 2012-02-08 | 珠海格力电器股份有限公司 | ITO (Indium Tin Oxide) thin film and transparent touch key provided with same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |