CN2236128Y - Micro-pressure sensor - Google Patents
Micro-pressure sensor Download PDFInfo
- Publication number
- CN2236128Y CN2236128Y CN 95245188 CN95245188U CN2236128Y CN 2236128 Y CN2236128 Y CN 2236128Y CN 95245188 CN95245188 CN 95245188 CN 95245188 U CN95245188 U CN 95245188U CN 2236128 Y CN2236128 Y CN 2236128Y
- Authority
- CN
- China
- Prior art keywords
- shielding box
- micro
- wiring board
- effect transistor
- pressure transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a micro-pressure sensor. The purpose is that a simplified circuit can be developed to reach the object of high sensitivity, light weight, and low power consumption. The primary structure is characterized in that a self-bias circuit is formed by a field effect transistor FET, a resistor R< g >, a resistor R< s >, and a capacitance C< s >. A grid G is connected with a piezoelectric ceramics sheet HTD. The utility model has the advantages that the performance is stable after the trial application, the weight is about 20 grams, the weak airflow can make the sensor work stably, one 5 number battery can continuously work more than one month, the sensitivity is high, the cost is low, the material is bought easily, and the micro-pressure sensor can be applied to each area.
Description
The utility model relates to a kind of micro-pressure transducer, is applied to medicine equipment, warning system, the highly sensitive touch probe in other field etc., various micro-impacts, pulse and feeler.
In background technology, the Chinese invention patent communique discloses " a kind of full light pricker Multifunction Sensor " on September 8th, 1993, it is used for microfabrication, fields such as precision measurement and automatic control, adopt semiconductor laser sawtooth wave Continuous Wave with frequency modulation difference interference principle, by a semiconductor laser that has optoisolator and light pricker exit, temperature control system of wafing, a beam splitter, the full light pricker of a plurality of no chamber single armeds interference system, and a plurality of light pricker sensor probes formations with difference in functionality, measure temperature respectively or simultaneously, displacement, pressure, pulling force, gas or liquid refractive index, the flow velocity of gas or liquid and flow, electric current, voltage, physical quantitys such as electric field magnetic field.Wherein pressure sensor circuit is complicated.
The purpose of this utility model is a kind of novel micro pressure transducer of development, by simplifying circuit, reaches highly sensitive, strong interference immunity, and volume is little, and is in light weight, practical, purpose low in energy consumption.
Technical solution of the present utility model is as follows:
Comprise field effect transistor FET and input biasing resistor R
G, source resistance R
SForm autobias circuit, be characterized in, field effect transistor FET grid G connects makes the piezoelectric ceramic piece HTD that micro-pressure changes the work of pulse voltage sensing into, by the drain D extension line of field effect transistor FET as output signal V
0
Technical solution of the present utility model also comprises:
By piezoelectric ceramic piece HTD and shielding box bottom 8 and border metallic framework 7 are formed shielding box up and down, each circuit component is fixed on the shielding box bottom 8 in shielding box, signal cable fairlead 3 is arranged on the border metallic framework 7, form the micro-pressure transducer of no wiring board.
By piezoelectric ceramic piece HTD and wiring board shielding box bottom 11 and border metallic framework 7 are formed shielding box up and down, each circuit component is fixed on the wiring board shielding box bottom of being made by two-sided copper clad plate 11, draw signal shielding line 13 on the wiring board shielding box bottom 11, form the micro-pressure transducer that wiring board is arranged.
In the above-mentioned said shielding box, between the silver-plated aspect 1 of the grid G of field effect transistor 4 and piezoelectric ceramic piece HTD signal input link 5 is arranged.
Above said signal input link 5 diameters of wire between 0.06 to 0.08 millimeter of .
Description of drawings of the present utility model is as follows:
Fig. 1 is circuit theory diagrams.
Fig. 2 is no wiring board trace pressure sensor structure synoptic diagram.
Fig. 3 has wiring board trace pressure sensor structure synoptic diagram.
Fig. 4 is wiring board shielding box base plate 11 floor map that two-sided copper clad plate is manufactured among Fig. 3.
Above-mentioned number in the figure is described as follows:
The silver-plated aspect of 1-piezoelectric ceramic piece HTD, the copper electrode of 2-piezoelectric ceramic piece HTD, 3-cable fairlead, 4-field effect transistor FET, 5-signal input link, 6-resistance R
G, 7-metallic framework, 8-shielding box bottom, 9-resistance R
S, the 10-capacitor C
S, 11-wiring board shielding box bottom, the 12-chip component, 13-draws shielding line.
Following adjoint is described in further detail: referring to Fig. 1, the utility model is made up of input part B in the frame of broken lines shielding box and signal outgoing cable line A, and in frame of broken lines, the grid G of field effect transistor FET connects input resistance R
G, source S biasing resistance R in parallel
SWith exchange shunt capacitance C
S, (capacitor C here
SCan cast out) the composition autobias circuit.The resistance R that connects at field effect transistor FET source S end wherein
SVoltage drop of last generation makes source S current potential current potential above Ground, and grid G voltage is to be produced by the drain current of pipe own.Because resistance R
GGenerally all in the number mega-ohms, its resistance is very big for value, and the input impedance of pipe equals resistance R substantially
GValue so the grid G electric current is very little, is similar to open circuit, and its grid G point current potential is approximately zero, thereby source S is formed partially anti-.Resistance R
SEffect with autostable working point causes field effect transistor FET drain D electric current I as temperature or other reason
DIncrease, according to (N raceway groove) field effect transistor transfer characteristic curve rule, then electric current I
D↑ → V
RS↑ → V
G↓ → I
D↓.Capacitor C
SBe equivalent to when AC signal occurs, make source S ground connection, stablize quiescent point, prevent to exchange negative feedback, in like manner also not because of resistance R
SAdding reduce ac gain.The grid G of field effect transistor FET connects piezoelectric ceramic piece HTD, thereby makes small pressure change electric signal into, produces a faint pulse voltage, be added to the grid G end of field effect transistor FET, through amplifying, by the bushing D of field effect transistor FET as signal outgoing cable line A, through resistance R
DConnect working power Vcc, in resistance R
DDraw signal output part V among the cable A of front end
0Referring to Fig. 2, this is a kind of structure of no wiring board, whole shielding box is made up of piezoelectric ceramic piece HTD, shielding box bottom 8 and border metallic framework 7, fixedly field effect transistor 4, source capacitance 10, source resistance 9 and resistance 6 on shielding box bottom 8, these each elements adopt miniature components, and metallic framework 7 can be made the circular open skeleton after the enameled wire paint removal with 2 millimeters of diameter , opening part can be made cable fairlead 3, simple in structure like this, volume is very little, 15 * 2.5 millimeters of nearly
3, weight is that this is characteristics of the present utility model about 20 grams.In addition, all between the silvered face 1 signal input link 5 is arranged in effect pipe 4 and the piezoelectric ceramic piece, the solid conductor that the about of its diameter is 0.06～0.08 millimeter, this also is characteristics of the present utility model, piezoelectric ceramic piece bottom plate electrode 2 is as workplace.Referring to Fig. 3, this is the sensor construction figure that has wiring board that adopts chip component, and basic structure is same as above, and difference is that two-sided copper clad plate is made into shielding box bottom 11, as wiring board; Bonding pad linear element 12 on it is connected with under it and draws shielding line 13.Referring to Fig. 4, this is the wiring board synoptic diagram, and each chip component can weld in the above, and four apertures of its periphery symmetry are to be connected as a single entity welding below it with lead.
Advantage of the present utility model and effect are as follows:
1, forms micro-pressure sensing owing to adopt autobias circuit to connect FET Device, so circuit is simple, volume is very little, and weight is 20 grams, and price is low, and this is this reality With novel characteristics.
2, because circuit structure design is scientific and reasonable, wherein signal input link 5 is Improve the key of sensitivity, so sensitivity is very high, sensor is apart from human nose about 100 The millimeter place, human normal is breathed the generation weak gas flow has working signal to sensor, concurrent Go out stable pulse signal, strong interference immunity, this is second characteristic of the present utility model.
3, because the utility model adopts the simplest circuit, so power consumption is extremely low, two But save No. 7 battery continuous operations more than 1 month, this is the 3rd characteristics of the present utility model.
4, the utility model is used widely as a kind of micro-pressure sensor At industry-by-industry, such as the medicine equipment respiration monitor, heart monitor (can be placed on the patient Pick up rhythm signal on arm, the finger), various feelers, little in the industrial circle Stroke sensor, pulse sensor, applied range, practical.
Claims (5)
1, novel micro pressure transducer comprises field effect transistor FET and input biasing resistor R
G, source resistance R
SForm autobias circuit, it is characterized in that: field effect transistor FET grid G connects makes the piezoelectric ceramic piece HTD that micro-pressure changes the work of pulse voltage sensing into, by the drain D extension line of field effect transistor FET as output signal V
0
2, novel micro pressure transducer according to claim 1, it is characterized in that: by piezoelectric ceramic piece HTD and shielding box bottom (8) and border metallic framework (7) are formed shielding box up and down, each circuit component is fixed on the shielding box bottom (8) in shielding box, signal cable fairlead (3) is arranged on the border metallic framework (7), form the micro-pressure transducer of no wiring board.
3, novel micro pressure transducer according to claim 1, it is characterized in that: by piezoelectric ceramic piece HTD and wiring board shielding box bottom (11) and border metallic framework (7) are formed shielding box up and down, each circuit component is fixed on the wiring board shielding box bottom of being made by two-sided copper clad plate (11), draw signal shielding line (13) on the wiring board shielding box bottom (11), form the micro-pressure transducer that wiring board is arranged.
4, according to claim 2 or 3 described novel micro pressure transducers, it is characterized in that: in the above-mentioned said shielding box, between the silver-plated aspect (1) of the grid G of field effect transistor (4) and piezoelectric ceramic piece HTD signal input link (5) is arranged.
5, novel micro pressure transducer according to claim 4 is characterized in that: top said signal input link (5) diameter of wire is between 0.06 to 0.08 millimeter of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95245188 CN2236128Y (en) | 1995-08-18 | 1995-08-18 | Micro-pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95245188 CN2236128Y (en) | 1995-08-18 | 1995-08-18 | Micro-pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2236128Y true CN2236128Y (en) | 1996-09-25 |
Family
ID=33885391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95245188 Expired - Fee Related CN2236128Y (en) | 1995-08-18 | 1995-08-18 | Micro-pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2236128Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109613065A (en) * | 2018-11-16 | 2019-04-12 | 东南大学 | A kind of semiconductor humidity sensor and preparation method thereof |
-
1995
- 1995-08-18 CN CN 95245188 patent/CN2236128Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109613065A (en) * | 2018-11-16 | 2019-04-12 | 东南大学 | A kind of semiconductor humidity sensor and preparation method thereof |
| CN109613065B (en) * | 2018-11-16 | 2021-03-16 | 东南大学 | Semiconductor humidity sensor and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |