CN223551663U

CN223551663U - A pressure-resistant deep-sea pH sensor based on ion-sensitive field-effect transistors

Info

Publication number: CN223551663U
Application number: CN202422631204.7U
Authority: CN
Inventors: 姜加龙; 童海明; 倪齐林; 马超杰; 周晨槟
Original assignee: Hangzhou Shallow Sea Technology Co ltd
Current assignee: Hangzhou Shallow Sea Technology Co ltd
Priority date: 2024-10-30
Filing date: 2024-10-30
Publication date: 2025-11-14
Anticipated expiration: 2034-10-30

Abstract

The utility model discloses a pressure-resistant deep sea pH sensor based on an ion-sensitive field effect transistor, which relates to the technical field of pH sensors and comprises a detection tube, wherein a detection circuit board is arranged in the detection tube, a bottom tube is arranged at the lower end of the outer wall of the detection tube through a thread sleeve, a salt bridge is arranged at the lower end of the inner wall of the detection tube, the bottom of the salt bridge is in contact fit with the bottom of the inner wall of the bottom tube, a chip fixing tube is fixedly embedded in the salt bridge, a jacking tube is arranged at the upper end of the detection tube through the thread sleeve, the upper end of the detection circuit board is positioned in the jacking tube, sealant is filled in the inner wall of the detection tube, the sealant is sealed and sleeved outside the chip fixing tube, an external reference solution is filled between the chip fixing tube and the detection tube, and an electrode is arranged in the internal connection of the external reference solution. The utility model replaces the traditional glass electrode by the ion-sensitive field effect transistor, has better voltage withstanding characteristic, and can realize the detection of the pH value of the sea water under the condition of deep sea high voltage.

Description

Pressure-resistant deep sea pH sensor based on ion-sensitive field effect transistor

Technical Field

The utility model relates to the technical field of pH sensors, in particular to a pressure-resistant deep sea pH sensor based on an ion-sensitive field effect transistor.

Background

The pH value is a parameter reflecting the acid and alkali strength of the seawater, and the pH value of the seawater is commonly measured by adopting a pH composite electrode consisting of a glass electrode and a reference electrode in the market at present, but because the pH glass electrode consists of a glass film, the shape of the pH glass electrode is a sphere, and 0.1mol/L hydrochloric acid and a silver chloride electrode are filled in the film, the pH glass electrode is easy to be damaged by extrusion under the condition of high pressure of deep sea, so that the pH glass electrode is difficult to use in deep sea with the depth of more than 100 meters.

The utility model adopts the ion-sensitive field effect transistor to replace the traditional glass bulb, has better measurement response speed and measurement accuracy than the glass electrode, is suitable for the section monitoring and the rapid monitoring of deep sea pH, and is also suitable for the application in the industries such as food industry, pharmaceutical industry and the like, for which the glass electrode is not suitable.

Disclosure of utility model

The present utility model has been made in view of the above-mentioned problems with the existing pressure-resistant deep sea pH sensor based on an ion-sensitive field effect transistor.

Therefore, the utility model aims to provide a pressure-resistant deep sea pH sensor based on an ion-sensitive field effect transistor, which solves the problems that the traditional pH glass electrode consists of a glass film, and the internally filled measuring substance is easy to be extruded and damaged under the condition of high pressure in the deep sea.

In order to achieve the above object, the present utility model provides the following technical solutions:

The utility model provides a withstand voltage formula deep sea pH sensor based on ion sensitive field effect transistor, includes the detection tube, the inside of detection tube is equipped with detection circuit board, the outer wall lower extreme of detection tube is equipped with the bottom tube through the thread bush, the inner wall lower extreme of detection tube is equipped with the salt bridge, the bottom of salt bridge and the inner wall bottom contact cooperation of bottom tube, the inside fixed die-fixing pipe that inlays of salt bridge, the upper end of detection tube is equipped with the push pipe through the thread bush, the upper end of detection circuit board is located the push pipe, the inner wall packing of detection tube is equipped with the sealant, the sealant seal cover locates the outside of die-fixing tube, the packing is equipped with outer reference solution between chip-fixing tube and the detection tube, the internal connection of outer reference solution is equipped with the electrode.

Preferably, the upper end of the inner wall of the jacking pipe is provided with a sealing thread, and the upper end of the inner part of the jacking pipe is connected with a water sealing connecting piece through the sealing thread.

Preferably, the composition of the external reference solution is 3mol/L KCL solution.

Preferably, the electrode is a silver-silver chloride electrode.

Further, a plurality of limit lugs are fixedly arranged at the lower end of the inner wall of the detection tube, and the limit lugs are in contact with the top of the salt bridge.

Preferably, a source electrode and a drain electrode are arranged on the top of the detection circuit board.

In the technical scheme, the utility model has the technical effects and advantages that:

1. According to the utility model, the detection tube, the bottom tube, the top tube, the salt bridge, the detection circuit board, the chip fixing tube, the sealant and the external reference solution are arranged, the ion-sensitive field effect transistor is used for replacing the traditional glass electrode, so that the detection device has better voltage-withstanding characteristic, can realize the detection of the pH value of the seawater under the condition of deep sea high pressure, expands the inapplicable scene of the original glass pH composite electrode, and has important significance for developing deep sea detection and deep sea marine organism protection.

Drawings

In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments described in the present utility model, and other drawings may be obtained according to these drawings for a person having ordinary skill in the art.

FIG. 1 is a schematic diagram of the structure of the present utility model;

FIG. 2 is an enlarged schematic view of portion A of FIG. 1 in accordance with the present utility model;

Fig. 3 is a pH measurement principle of the ion sensitive field effect transistor of the present utility model.

Reference numerals illustrate:

1. A detection tube; 2, a detection circuit board, 3, a bottom tube, 4, a salt bridge, 5, a chip fixing tube, 6, a top tube, 7, sealant, 8, an external reference solution, 9, an electrode, 10, a water sealing connector, 11, a limiting bump, 12, a source electrode, 13 and a drain electrode.

Detailed Description

In order to make the technical scheme of the present utility model better understood by those skilled in the art, the present utility model will be further described in detail with reference to the accompanying drawings.

The embodiment of the utility model discloses a pressure-resistant deep sea pH sensor based on an ion-sensitive field effect transistor.

The utility model provides a pressure-resistant deep sea pH sensor based on an ion-sensitive field effect transistor as shown in figures 1-3, which comprises a detection tube 1, wherein a detection circuit board 2 is arranged in the detection tube 1, a source electrode 12 and a drain electrode 13 are arranged at the top of the detection circuit board 2, a bottom tube 3 is arranged at the lower end of the outer wall of the detection tube 1 through a threaded sleeve, a salt bridge 4 is arranged at the lower end of the inner wall of the detection tube 1, the bottom of the salt bridge 4 is in contact fit with the bottom of the inner wall of the bottom tube 3, a chip fixing tube 5 is fixedly embedded in the salt bridge 4, a jacking tube 6 is arranged at the upper end of the detection tube 1 through a threaded sleeve, sealing threads are arranged at the upper end of the inner wall of the jacking tube 6, and a water sealing connecting piece 10 is arranged at the upper end of the inner part of the jacking tube 6 through sealing threaded connection;

The upper end of the detection circuit board 2 is positioned in the jacking pipe 6, the inner wall of the detection pipe 1 is filled with sealant 7, the sealant 7 is sealed and sleeved on the outer side of the chip fixing pipe 5, an outer reference solution 8 is filled between the chip fixing pipe 5 and the detection pipe 1, the composition of the outer reference solution 8 is 3mol/LKCL solution, an electrode 9 is arranged in the inner connection of the outer reference solution 8, and the electrode 9 is a silver-silver chloride electrode.

Before the PH sensor is used, an ion-sensitive field effect transistor PCB is selected and packaged in a detection tube 1, a detection circuit board 2 is fixed through a chip fixing tube 5, then a salt bridge 4 is arranged at the lower end of the chip fixing tube 5, the position of the salt bridge 4 is limited through a bottom tube 3, then an external reference solution 8 is filled in the detection tube 1, a sealant 7 is sealed and fixed, finally a jacking tube 6 is arranged at the top of the detection tube 1 through threaded connection, and a water sealing connector 10 is sealed and fixed, so that the sensor is integrally contacted;

When the PH detection is carried out, the lower part of the sensor is contacted with the liquid to be detected through the salt bridge 4, a certain voltage is applied between the source electrode 12 and the drain electrode 13, when the concentration of hydrogen ions in the external reference solution 8 changes, the voltage between the electrode 9 and the source electrode 12 changes along with the change of the PH and follows the Nernst equation, so that the accurate measurement of the PH of the solution to be detected can be realized through measuring the potential difference between the electrode 9 and the source electrode;

Meanwhile, the data storage unit and the lithium battery unit are placed inside the jacking pipe 6 to seal the jacking pipe 6, so that power supply and data storage can be independently completed without depending on external power supply, and the application scene of the sensor is improved.

In order to effectively fix the setting position of the salt bridge 4, as shown in fig. 2, a plurality of limit lugs 11 are fixedly arranged at the lower end of the inner wall of the detection tube 1, and the limit lugs 11 are in contact with the top of the salt bridge 4.

Through the cooperation of the two-way support of spacing lug 11 and bottom pipe 3 bottom, can fix the position of salt bridge 4, avoid the salt bridge to take place the position deviation because of the water pressure as far as possible, guarantee PH detects the stable going on of work.

While certain exemplary embodiments of the present utility model have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that modifications may be made to the described embodiments in various different ways without departing from the spirit and scope of the utility model. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive of the scope of the utility model, which is defined by the appended claims.

Claims

1. The utility model provides a withstand voltage type deep sea pH sensor based on ion sensitive field effect transistor, includes detection tube (1), its characterized in that, the inside of detection tube (1) is equipped with detection circuit board (2), the outer wall lower extreme of detection tube (1) is equipped with end tube (3) through the thread bush, the inner wall lower extreme of detection tube (1) is equipped with salt bridge (4), the bottom of salt bridge (4) and the inner wall bottom contact cooperation of end tube (3), the inside of salt bridge (4) is fixed to be inlayed and is equipped with chip fixed pipe (5), the upper end of detection tube (1) is equipped with push pipe (6) through the thread bush, the upper end of detection circuit board (2) is located push pipe (6), the inner wall packing of detection tube (1) is equipped with sealed glue (7), sealed glue (7) seal cartridge is located the outside of chip fixed pipe (5), the packing is equipped with outer reference solution (8) between chip fixed pipe (5) and the detection tube (1), the inside connection of outer reference solution (8) is equipped with electrode (9).

2. The pressure-resistant deep sea pH sensor based on the ion sensitive field effect transistor according to claim 1, wherein the upper end of the inner wall of the jacking pipe (6) is provided with sealing threads, and the upper end of the inner part of the jacking pipe (6) is provided with a water sealing connecting piece (10) through sealing threads.

3. The ion-sensitive field effect transistor based pressure-resistant deep sea pH sensor according to claim 1, characterized in that the composition of the external reference solution (8) is a 3mol/L KCL solution.

4. The ion-sensitive field effect transistor based pressure-resistant deep sea pH sensor according to claim 1, characterized in that the electrode (9) is a silver-silver chloride electrode.

5. The pressure-resistant deep sea pH sensor based on the ion sensitive field effect transistor according to claim 1, wherein a plurality of limit bumps (11) are fixedly arranged at the lower end of the inner wall of the detection tube (1), and the limit bumps (11) are in contact with the top of the salt bridge (4).

6. The ion-sensitive field effect transistor-based pressure-resistant deep sea pH sensor according to claim 1, wherein the top of the detection circuit board (2) is provided with a source (12) and a drain (13).