CN2230922Y - Silicon integrated multi-contact vacuum switch - Google Patents
Silicon integrated multi-contact vacuum switch Download PDFInfo
- Publication number
- CN2230922Y CN2230922Y CN 95239085 CN95239085U CN2230922Y CN 2230922 Y CN2230922 Y CN 2230922Y CN 95239085 CN95239085 CN 95239085 CN 95239085 U CN95239085 U CN 95239085U CN 2230922 Y CN2230922 Y CN 2230922Y
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- China
- Prior art keywords
- vacuum
- utility
- model
- silicon
- reference cavity
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- Expired - Fee Related
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Abstract
The utility model relates to a silicon integrated multiple-contact vacuum switch which is a semiconductor sensor used for piecewise and automatically controlling vacuum degree in partial vacuum systems. The utility model adopts silicon material whose surface is provided with heavy doping as a substrate, a polycrystalline silicon thin film and the substrate are sealed in a vacuum way by the sio<2> depositing layer of a second vacuum system and form a vacuum reference cavity, the spacing of the vacuum reference cavity is controlled by the thickness of the sio<2> depositing layer, and the polycrystalline silicon thin film is provided with a plurality of contacts composed of the heavily doped. The utility model has the advantages of precise control of the polycrystalline silicon thin film and the spacing of the vacuum reference cavity, simple structure, convenient technique, small size, low cost, simple test line, etc. The utility model doesn't need dual-surface photolithography alignment and the bonding of glass and silicon, and the utility model is favorable to large-scale productions.
Description
The utility model is a kind of multiconductor vacuum tightness switch that vacuum tightness is controlled in the segmentation of low vacuum system automatically that is used for, and belongs to the semiconductor transducer technical field.
Main ionization gauge and the ionization bubble of adopting carries out the rough vacuum measurement at present, and they can't be used in automatic control system.The existing sensor that is used for the automatic measurement of rough vacuum is silicon integrated vacuum degree sensor.Because the vacuum variation can cause the deformation of silicon fiml, and silicon fiml deformation meeting causes that piezo-resistance changes, or the chamber spacing of vacuum reference cavity changes and cause its capacitance variations, therefore, measures piezo-resistance and changes or chamber capacitance variations, the i.e. as can be known variation of vacuum.Because silicon integrated vacuum degree sensor production difficulty in process and measuring circuit complexity have affected many application that do not need accurately to indicate the vacuum occasion.
The purpose of this utility model is at the deficiencies in the prior art, and a kind of multiconductor vacuum tightness switch that vacuum tightness is controlled in segmentation in the low vacuum system automatically that can be used for is provided.
The utility model can be made of substrate, silicon fiml and vacuum reference cavity, be characterized in that substrate adopts silicon materials, there is heavily doped layer on its surface, and silicon fiml is polysilicon membrane, the a plurality of contacts that have heavy doping to consist of on the polysilicon membrane, the vacuum reference cavity takes to deposit silicon dioxide (S in inferior vacuum system
iO
2) layer vacuum seal.The spacing of vacuum reference cavity adopts the S of deposition
iO
2Layer control behind polysilicon layer on the deposition, is used erosion removal S again
iO
2Layer consists of, and its spacing can be segmentation structure or ramp structure.Heavy doping contact on the polysilicon membrane is generally 3～10.Really spend under the empty condition in difference, because the relative pressure difference, the shape degree of the elastic membrane that polysilicon film consists of is also different, makes the contact of the diverse location of multi-contact vacuum switch be in short circuit or open circuit, thereby can record the relative vacuum degree of low vacuum system.
The utility model compared with prior art, have simple in structure, easy to make, volume is little and low cost and other advantages.Because polysilicon membrane thickness is controlled easily, its thickness can reach below the 0.5 μ m, is generally 0.3～2 μ m; The vacuum reference cavity adopts and deposit S in inferior vacuum system
iO
2Carry out sealing-in, vacuum performance is good; The spacing of vacuum reference cavity adopts deposition S
iO
2Layer thickness is determined, the control accuracy height; Owing to do not need the Direct Bonding of dual surface lithography aligning and glass and silicon, in same measurement category, reduced volume is conducive to produce in enormous quantities greatly.Because circuit is simple when adopting the utility model to measure, thereby the vacuum that can be widely used in segmentation control is measured occasion automatically.
Fig. 1 is conventional silicon integrated vacuum degree sensor construction schematic diagram; Fig. 2 is structural representation of the present utility model.
The utility model can adopt scheme shown in Figure 2 to realize.Substrate among Fig. 1 (1) is a glass; (2) be voltage dependent resistor (VDR); (3) be silicon fiml, adopt the Direct Bonding sealing-in between silicon fiml and the substrate.Substrate among Fig. 2 (4) can adopt high-pure P-type silicon, and there is heavy doping N on its surface
+Layer (11) is as bottom electrode; Contact (7) (for example the having 6) polysilicon layer that has a plurality of heavy doping to form on the polysilicon membrane (6) can be taked bridge architecture; Vacuum reference cavity (9) takes to deposit earlier S
iO
2Layer, deposited polycrystalline silicon thin film hollows out erosion removal SiO then again
2At inferior vacuum system deposition SiO
2Layer (5) vacuum seal consists of, the spacing of vacuum reference cavity (9) can for:
1 μ m is to 4 μ m.(8) be the aluminium extraction electrode; Aluminium lamination (10) is mainly as forming good contact with a plurality of contacts.
Claims (3)
1, a kind ofly be used for the integrated multiconductor vacuum tightness of the silicon switch that vacuum tightness is controlled in the segmentation of low vacuum system automatically, be made of substrate, silicon fiml and vacuum reference cavity, it is characterized in that substrate adopts silicon materials, there is heavily doped layer on its surface, and silicon fiml is a polysilicon membrane; The SiO that deposits is taked in a plurality of contacts that have heavy doping to constitute on the polysilicon membrane, vacuum reference cavity in inferior vacuum system
2Layer vacuum seal.
2, the integrated multiconductor vacuum tightness of silicon according to claim 1 switch is characterized in that the spacing of vacuum reference cavity adopts deposition SiO
2Layer control, spacing is segmentation staircase structural model or ramp type structure, spacing is 1～4 μ m.
3, the integrated multiconductor vacuum tightness of silicon according to claim 1 and 2 switch, the number of contacts that it is characterized in that polysilicon membrane is 3～10, the thickness of polysilicon membrane is 0.3～2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95239085 CN2230922Y (en) | 1995-01-23 | 1995-01-23 | Silicon integrated multi-contact vacuum switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95239085 CN2230922Y (en) | 1995-01-23 | 1995-01-23 | Silicon integrated multi-contact vacuum switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2230922Y true CN2230922Y (en) | 1996-07-10 |
Family
ID=33880952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95239085 Expired - Fee Related CN2230922Y (en) | 1995-01-23 | 1995-01-23 | Silicon integrated multi-contact vacuum switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2230922Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114314498A (en) * | 2022-03-14 | 2022-04-12 | 南京元感微电子有限公司 | MEMS film vacuum gauge and preparation method thereof |
-
1995
- 1995-01-23 CN CN 95239085 patent/CN2230922Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114314498A (en) * | 2022-03-14 | 2022-04-12 | 南京元感微电子有限公司 | MEMS film vacuum gauge and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |