CN221694614U - Quality inspection room structure for polycrystalline silicon block - Google Patents
Quality inspection room structure for polycrystalline silicon block Download PDFInfo
- Publication number
- CN221694614U CN221694614U CN202323425791.6U CN202323425791U CN221694614U CN 221694614 U CN221694614 U CN 221694614U CN 202323425791 U CN202323425791 U CN 202323425791U CN 221694614 U CN221694614 U CN 221694614U
- Authority
- CN
- China
- Prior art keywords
- air
- quality inspection
- air shower
- inspection chamber
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 134
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 239000003570 air Substances 0.000 claims abstract description 271
- 230000003749 cleanliness Effects 0.000 claims abstract description 15
- 239000012080 ambient air Substances 0.000 claims abstract description 14
- 238000005192 partition Methods 0.000 claims abstract description 12
- 238000000926 separation method Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 8
- 229910001256 stainless steel alloy Inorganic materials 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000003908 quality control method Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 description 38
- 150000002500 ions Chemical class 0.000 description 22
- 239000002245 particle Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000007664 blowing Methods 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 specifically Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F7/00—Ventilation
- F24F7/04—Ventilation with ducting systems, e.g. by double walls; with natural circulation
- F24F7/06—Ventilation with ducting systems, e.g. by double walls; with natural circulation with forced air circulation, e.g. by fan positioning of a ventilator in or against a conduit
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F8/00—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying
- F24F8/10—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by separation, e.g. by filtering
- F24F8/192—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by separation, e.g. by filtering by electrical means, e.g. by applying electrostatic fields or high voltages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Ventilation (AREA)
Abstract
The present utility model further improves the cleanliness of a quality inspection chamber section (clean room section) in a quality inspection chamber structure for polycrystalline silicon blocks to which an open clean room structure is applied. The quality inspection chamber structure for polycrystalline silicon blocks of the present utility model is an open type quality inspection chamber structure for polycrystalline silicon blocks comprising a quality inspection chamber portion and an air shower chamber portion for entering and exiting the chamber connected to the quality inspection chamber portion, wherein the air to be sprayed is ion air, the indoor pressure of the quality inspection chamber portion is adjusted to be at least 0.5Pa higher than the indoor pressure of the air shower chamber portion when the air shower operation is stopped, and an ionizer is provided on the ceiling of the quality inspection chamber portion at least in the vicinity of a partition from the air shower chamber portion, whereby the ambient air in the portion below the vicinity of the partition of the quality inspection chamber portion has the ability to eliminate charges in such a manner that the potential decay time is within 1 minute for positive polarity and negative polarity, respectively, when the air shower operation is stopped.
Description
Technical Field
The present utility model relates to a quality inspection chamber structure for a polycrystalline silicon chunk, and more particularly, to a quality inspection chamber structure for a polycrystalline silicon chunk including a quality inspection chamber portion formed of a clean room and an air shower portion connected to the quality inspection chamber portion.
Background
Polycrystalline silicon is very useful as a raw material for growing a silicon single crystal required for manufacturing a semiconductor device or the like. As a general method for producing polycrystalline silicon, the siemens method is known.
The siemens method is a method of bringing a silane source gas such as trichlorosilane into contact with a heated silicon seed rod to grow polycrystalline silicon in vapor phase on the surface of the seed rod. The polysilicon produced by the siemens process is obtained in the form of a rod. The rod-shaped polysilicon has a diameter of 80 to 150mm and a length of 1000mm or more. Therefore, in other steps, for example, in the case of using the rod-shaped polycrystalline silicon in a silicon single crystal growth apparatus according to the CZ method, the rod is cut into a predetermined length or is crushed into an appropriate piece. These polysilicon blocks are classified by a sieve or the like as needed. Thereafter, in order to remove the metal contaminants adhering to the surface, a packaging bag of high purity is filled in a packaging process and shipped via a cleaning process, for example, a process of bringing hydrofluoric acid or an acidic solution containing hydrofluoric acid and nitric acid into contact with polysilicon.
The above-mentioned polycrystalline silicon block is transported to an inspection chamber before packaging, and is generally used for analysis of impurities such as metal contamination and carbon contamination, appearance inspection of a state of occurrence of cracks, stains, irregularities, and the like. Further, since the polysilicon is a material for semiconductor use and is required to have high purity, such inspection work is performed in a clean room in a clean environment. In particular, with recent high integration of semiconductor devices, the purity required for such polycrystalline silicon blocks is further increased, and therefore the above-described clean room is required to have a higher cleanliness of 1000 or less (for example, [ 0028 ] of patent document 1).
Here, the clean room is generally connected to an air shower portion which is a passage for an operator to enter and exit the room, in addition to the clean room portion for the operation in the clean environment. In such a clean room structure, the opening width of the separation between the air shower portion and the quality inspection chamber portion and the separation between the air shower portion and the external space is generally about 50 to 170cm, and if the air shower portion and the external space are left open, dust may leak into the air inside the quality inspection chamber portion, and therefore, a closing door may be provided.
In the air shower portion, before entering the clean room portion, air is blown to a person entering the clean room to remove dust attached thereto. Such air shower is performed by taking out external air and purifying the air, and spraying the air as an air flow having a constant air potential, but there are cases where adhesion of dust to a person who enters a room is strong due to static electricity, so that the removal performance is often insufficient only by contact with such an air flow.
Therefore, attempts have been made to make the injected air into ion air ionized by an ionizer (ion generator). That is, since the electrostatic charge carried by the operator is neutralized by jetting the ionic air of the opposite polarity, the adhesion of dust can be reduced. Since the dust removing effect is excellent, the simplification of the clean room structure can be studied in contrast to the normal operation type which can be allowed even if the cleanliness is not so high while the operation is performed in the clean room. In view of this, it has been proposed to simultaneously design the air flow in the air shower chamber to remove the closing door at each partition from the clean room portion and the external space (for example, refer to patent document 2 [ 0010 ] [ 0012 ]). When the door is removed in this way, the structure of a so-called open type clean room is obtained, and the operator can easily enter and exit the clean room, and the durability and the like are excellent, so that the practical value is very high.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2020-164347
Patent document 2: japanese patent laid-open No. 2020-200975
Disclosure of utility model
Problems to be solved by the utility model
However, the air shower portion has an open clean room structure using ion air, and the cleanliness of the clean room portion has not been satisfied when the work object in the clean room portion is the quality inspection of the polycrystalline silicon chunk. Specifically, even if the specification of the grade 1000 or less in the quality inspection chamber portion is in a clean state, there is a concern that the local dust amount increases around the connection portion with the air shower portion, and in this case, contamination of the polysilicon lump in the vicinity of the portion and a decrease in accuracy of impurity analysis may occur. In this way, when the work object in the clean room section is quality inspection of the polycrystalline silicon chunk, there is a problem of insufficient cleanliness, and the polycrystalline silicon chunk is a product that requires particularly high purity as described above.
In view of the above background, an object of the present utility model is to further improve the cleanliness of a quality inspection chamber portion (clean room portion) in a quality inspection chamber structure for a polycrystalline silicon block to which the open type clean room structure is applied.
Means for solving the problems
The present inventors continued intensive studies in order to solve the above-mentioned problems. As a result, it has been found that the above-described problems can be improved by adjusting the indoor pressure of the quality inspection chamber to be higher than the indoor pressure of the air shower chamber when the air shower operation is stopped, and thus, when the air shower operation is stopped, the internal air of the quality inspection chamber flows out to the air shower chamber, and then, by taking a structure in which the flowing internal air is ionic air having a certain charge eliminating capability.
That is, the present utility model is a quality inspection chamber structure for a polycrystalline silicon chunk, characterized in that,
Comprises a quality inspection chamber part and an air shower part for entering and exiting the chamber, wherein the quality inspection chamber part is composed of a clean room with the cleanliness of less than or equal to 1000, the air shower part is connected with the quality inspection chamber part,
The air shower part sprays ion air from a plurality of air spraying ports arranged on one wall surface,
The quality inspection chamber structure for the polycrystalline silicon block is an open type structure in which a closed door is not arranged at the separation part of the air blowing chamber part and the quality inspection chamber part and at the separation part of the air blowing chamber part and an external space,
The indoor pressure of the quality inspection chamber is adjusted to be at least 0.5Pa higher than the indoor pressure of the air shower chamber when the air shower operation is stopped,
An ionizer is provided on the ceiling of the quality inspection chamber portion at least in the vicinity of a partition from the air shower portion,
By diffusion of the ion air from the ionizer, the ambient air in the lower portion near the separation of the quality inspection chamber portion from the air shower portion has the following properties: when the air shower operation is stopped, 1000V is applied to the charged plate as the absolute value of the test voltage, and then the potential decay time from the absolute value of the potential of the charged plate to 100V is 1 minute or less for positive and negative polarities, respectively.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the quality inspection chamber structure for a polycrystalline silicon chunk of the present utility model, the dust can be highly prevented from being carried in from the air shower portion to the quality inspection chamber portion as the clean chamber portion, and inspection for a semiconductor of the polycrystalline silicon chunk can be continuously performed in a highly clean environment in all the chambers including the periphery of the connection portion with the air shower portion.
Further, since the clean room structure is open, the clean room structure is easy to enter and exit the quality inspection room, and is excellent in quietness and durability, and therefore is very useful.
Drawings
Fig. 1 is a schematic vertical cross-sectional view showing a typical embodiment of the quality inspection chamber structure for a polycrystalline silicon chunk of the present utility model.
Fig. 2 is an A-A line end view of the polysilicon block quality inspection chamber structure of fig. 1.
Fig. 3 is a B-B line end view of the air shower portion of the quality inspection chamber structure for polycrystalline silicon chunk of fig. 2.
Detailed Description
The inventors of the present invention have found that, in an open clean room structure in which ion air is injected into the air shower portion, even if the structure is applied to a quality inspection room structure for polycrystalline silicon blocks, the cleanliness of the quality inspection room portion (clean room portion) is not always sufficient because leakage of dust from the air shower portion to the quality inspection room portion cannot be sufficiently suppressed when the air shower operation is stopped.
That is, by using the above-described ion air, the falling off of dust adhering to the person entering the air shower portion is highly performed, and most of the falling off dust is trapped in the air shower portion by the exhaust port provided on the wall surface on the side opposite to the wall surface on which the air jet port is provided, and is removed outdoors. However, even this is not easy to be performed completely, and a certain amount of dust is not trapped by the exhaust port, and is inevitably trapped in the air shower portion. In addition, in the open type clean room structure, it is not easy to completely prevent the inflow of outside air into the air shower portion, and even if a worker or the like for blocking the inflow of outside air into the room air flow is performed, there is a concern that a small amount of inflow occurs. Then, the flowing dust is carried in, and remains in the air shower portion. In particular, when the operation of air shower is stopped, the inflow amount of outside air into the air shower portion increases, and along with this, the carry-in amount of dust increases.
Further, the metal particles are also slowly released from various equipment provided in the air shower portion, and this also remains in the air shower portion when the air shower operation is stopped. In detail, a communication speaker, a lighting fixture, and the like are often provided on a wall surface of the air shower. In addition, an inner hollow portion for an air flow path is generally formed in the wall portion, and an air cleaning filter, an air shower control substrate, and the like are provided therein. That is, the release of metal particles from these devices cannot be ignored, although the material depends on the material of the device.
Thus, dust is accumulated in the air shower portion. Further, since there is no door separating from the quality inspection chamber, a part of the retained dust leaks into the quality inspection chamber, and the cleanliness of the periphery of the connection portion cannot be sufficiently maintained as described above. In particular, the retained dust is again easily electrostatically charged when the air shower operation is stopped, and thus, is again firmly attached to the wall surface of the air shower portion and the surfaces of various installation members, and this cannot be easily removed and accumulated in some air flow operations in the air shower portion. It is considered that the air is released by a person entering the air shower portion, or by contact of an object to be carried in, and a part of the air is allowed to flow into the quality inspection chamber portion.
In the present utility model, the above-described feature structure is used to suppress leakage of such dust into the quality inspection chamber, and the detailed description thereof will be given below with reference to the drawings showing an embodiment of the present utility model. The present utility model is not limited to these modes.
Fig. 1 is a schematic vertical cross-sectional view showing a typical embodiment of the quality inspection chamber structure for a polycrystalline silicon chunk of the present utility model, and fig. 2 is an A-A line end view of the quality inspection chamber structure for a polycrystalline silicon chunk. The quality inspection chamber structure (1) for polycrystalline silicon blocks shown in fig. 1 and 2 includes a quality inspection chamber section (2) formed of a clean room and an air shower section (3) for entering and exiting the chamber, which is connected to the quality inspection chamber section. The quality inspection chamber (2) is generally 20 to 1000m 2, preferably 50 to 500m 2, in the case of an industrial scale which is installed in parallel with an apparatus for producing a polycrystalline silicon mass by pulverizing rod-shaped polycrystalline silicon produced by the siemens method. The air shower portion (3) connected thereto is generally 3500 to 35000cm 2 in size.
The quality inspection chamber section (2) is according to ISO14644-1:2015, the cleanliness factor obtained by the minimum number of measurement points is 1000 or less, more preferably 100 or less. Here, the above-mentioned class of clean rooms is according to ISO14644-1:2015, the environmental air of the quality inspection room section (2) in a silent state without performing quality inspection operation is measured by a particle counter to evaluate.
The clean room structure of fig. 1 is open, and a closing door is not provided at the separation between the quality inspection room (2) and the air shower (3), and similarly, at the separation between the air shower (3) and the external space (4). In this case, the partitions are opened, and the space inside the quality inspection chamber section (2) communicates with the space inside the air shower section (3), and the space inside the air shower section (3) communicates with the external space (4). In such an open type clean room structure, from the viewpoint of preventing contamination of the adjacent portion, it is preferable that air ejected from each of the plurality of air ejection openings (7) provided on one wall surface flows so as not to spread as much as possible toward the communicating clean room portion and the external space during the air shower operation. Specifically, as shown in patent document 2, it is preferable to form a dust removing air flow for blowing a dust removing air flow to the person entering the room, a sheath air flow for preventing dust blown off by the dust removing air flow from scattering to the outside, and the like. In addition, a structure in which an air curtain is formed by flowing an air flow in the up-down direction or the left-right direction at the quality inspection chamber section (2) of the air shower section (3) or at a partition from the external space (4) to effectively prevent inflow of dust into the quality inspection chamber section (2) is also preferable.
In fig. 1, an inspection table (5) is provided in a chamber of a quality inspection chamber section (2), and quality inspection of a polycrystalline silicon chunk (6) is performed here. The polycrystalline silicon chunk (6) to be inspected is not particularly limited, but is preferably a crushed product of a polycrystalline silicon rod obtained by the siemens method. The quality inspection includes analysis of impurities such as metal contamination and carbon contamination; surface texture inspection such as cracking, staining, and unevenness, measurement of block size, and appearance inspection such as confirmation of shape.
An air jet port (7) is formed at a plurality of positions in the up-down direction on one wall surface of the air shower portion (3), and an air outlet (8) is formed on the other wall surface. Thus, an operator (15) who enters the air shower part (3) can operate the air jet opening (7) by pressing an air shower operation switch provided in a wall part or the like for a certain period of time, and bathe the air. At the same time, the air suction of the air outlet (8) is also operated, and the air flow blown to the operator (15) is discharged to the outside. With the discharge of the air flow, most of the dust detached from the worker (15) who is showered with the air is discharged outdoors.
The air volume of the air ejected from the air ejection opening (7) is preferably 5 to 50m 3/min, more preferably 10 to 20m 3/min in the whole air shower portion (3). The air velocity of the air ejected from each air ejection port (7) is preferably 10 to 40 m/sec, more preferably 20 to 35 m/sec. The suction amount of the exhaust port (8) is preferably 5 to 50m 3/min, more preferably 10 to 20m 3/min, in the whole air shower portion (3) as the air volume of the air ejected from the air ejection port (7).
The air shower portion (3) is preferably provided with wall portion hollow portions (9) communicating with each other in both side wall portions and in the bottom wall portion as shown in fig. 3, and fig. 3 is a B-B line end view in the quality inspection chamber structure for polycrystalline silicon chunk of fig. 2. The air flow exhausted to the exhaust port (8) provided on the other wall surface flows through the hollow portion (9) in the wall portion by the action of the air supply fan (16) provided at a proper position, and is circulated again to the air injection port (7) provided on the one wall surface and is injected. Preferably, the gas is cleaned to a purity suitable for air shower by a dust filter (10) and a dust collecting filter (11) in the middle of the circulating flow path.
In the air shower portion (3), air injected from the air injection port (7) is ion air. When the air is ionized as described above and then blown to an operator (15) or the like, the charged static charge is neutralized by the ionized air having the opposite polarity to the ionized air, and the adhesion of dust is reduced.
The ionization of air may be performed by an ionizer, and such an ionizer may be of a radiation type, a soft X-ray type, an ultraviolet type, or the like, but is generally preferably of a corona discharge type. The corona discharge ionizer is a device that generates ions of opposite polarity to the electrostatic charge charged on the surface of the object by the ions generated by the corona discharge of the discharge needle, and neutralizes the ions, specifically, plasma is formed at the tip of the needle electrode of the ionizer, and the ions of opposite polarity to the charged object are extracted along the electric line between the charged object and the ionizer, thereby neutralizing the charge on the surface of the object. In addition, the needle electrode of the ionizer is preferably made of silicon in consideration of the possibility of contamination at the time of defect.
In the air shower portion (3) shown in fig. 3, air injection ports (7) are provided at a plurality of positions in the up-down direction on one wall surface, and in response thereto, a strip-shaped ionizer (12) in which a plurality of discharge needles are provided in the up-down direction is provided. The voltage application method for generating the corona discharge may be any of direct current, alternating current, pulsed direct current, and pulsed alternating current, but in general, pulsed direct current or pulsed alternating current is preferable from the viewpoint of eliminating charges in the entire clean room. The voltage applied to the ionizer (12) is preferably 3 to 30kV, more preferably 5 to 20kV.
The capability of the ionized charge elimination of the ion air emitted from the air ejection opening (7) is preferably the following intensity at the time of ejection: in the central part of the air shower part (3), the potential decay time in the ion air flow at each position of 1/3 of the height from the ground to the ceiling and 2/3 of the height is respectively within 10 seconds for positive charge and negative charge. This potential decay time will be described later. Further, the potential decay time of the ionic air is preferably 2 to 8 seconds for positive and negative charges, respectively.
The potential decay time of the above-mentioned ionic air was measured as the time required for the voltage of each charge to be reduced to 10% when the charged plate was brought to a test voltage of 1000V of the positive and negative charges using a test apparatus for measuring the characteristics of an ionizer used in JIS C61340-4-7. Specifically, the potential decay time was measured as the time required for the absolute value of the potential of the charged plate to decay to 100V after 1000V was applied to the charged plate as the absolute value of the test voltage for each of the positive and negative polarities. In other words, the potential decay time of the positive polarity is measured as the time when the potential of the charged plate is from 1000V to 100V. The potential decay time of the negative polarity is measured as the time for the potential of the charged plate to go from-1000V to-100V. The measurement of the potential decay time may be performed by using a charged plate monitor according to the method described in 6.1-chamber ionizer of JIS C61340-4-7.
In this way, the air blown by the air is made into the ion air, so that the dust removing effect is very excellent for the operator (15) who enters the air blowing chamber section (3), but as described above, a large amount of dust leaks from the air blowing chamber section (3) to the quality inspection chamber section (2), so that in the clean room structure of fig. 1, the indoor pressure of the quality inspection chamber section (2) is adjusted to be higher by a certain degree than the indoor pressure of the air blowing chamber section (3) when the air blowing operation is stopped. That is, the indoor pressure of the quality inspection chamber section (2) is adjusted to be at least 0.5Pa, more preferably 1 to 10Pa, and particularly preferably 3 to 5Pa higher than the indoor pressure of the air shower section (3) in the measurement when the air shower operation is stopped. The indoor pressure at the time of stopping the air shower operation of the open air shower portion (3) is slightly pressurized, but even in this case, the indoor pressure of the quality inspection chamber portion (2) is set to be higher than the indoor pressure of the air shower portion (3) by the above-mentioned value.
As a result, even when the air shower operation is stopped, the air shower portion (3) has a high indoor pressure, and the internal air flows in from the quality inspection chamber portion (2) and flows out to the external space. Accordingly, in contrast to this flow, the inflow of outside air into the air shower portion (3) is greatly suppressed, and the inflow of inside air of the air shower portion (3) into the quality inspection chamber portion (2) is also greatly suppressed. As a result, the amount of dust carried into the quality inspection chamber section (2) with the air flow flowing from the air shower section (3) into the quality inspection chamber section (2) can be highly reduced.
Here, the pressure in the quality inspection chamber section (2) is measured by a differential pressure gauge in the vicinity of a partition between the air shower section (3) and the quality inspection chamber section (2) for measuring a potential decay time described later. The internal pressure of the air shower portion (3) is measured at the center thereof.
In the clean room structure of fig. 1, the maximum feature is that the ambient air in the lower part near the separation between the quality inspection room (2) and the air shower (3) is ionic air having a certain strength and an ability to eliminate electric charges while the room pressure in the quality inspection room (2) is adjusted to be high. That is, in the measurement of the representative portion described later, the ambient air in the lower portion near the separation from the air shower portion is adjusted so that 1000V is applied to the charging plate as the absolute value of the test voltage at the time of stopping the air shower operation, and then the potential decay time for which the absolute value of the potential of the charging plate decays to 100V is 1 minute or less for the positive polarity and the negative polarity, respectively, more preferably 30 seconds or less, and particularly preferably 5 to 20 seconds. It can be said that the decay time of the potential [ 100V ] measured by the electrification test voltage [ 1000V ] of the electrification plate is adjusted to be 1 minute or less for both positive and negative charges, more preferably 30 seconds or less, and particularly preferably 5 to 20 seconds.
With such a configuration, the pressure in the quality inspection chamber section (2) is adjusted to be high, so that the air flow flowing out from the quality inspection chamber section (2) to the air shower section (3) and further flowing out to the external space has a capability of eliminating charges of a constant intensity due to the ionization. Thus, even when the air shower operation is stopped, the dust remains in the room, and the dust is not easily charged again, and does not adhere to the wall surface of the air shower portion (3) and continues to float satisfactorily. In addition, even if the water settles, the water does not adhere to the ground or the like firmly and flows on the ground. As a result, the air flow from the quality inspection chamber (2) to the external space (4) is immediately discharged by being carried with the air flow formed by adjusting the indoor pressure of the quality inspection chamber (2) to be high, and is not accumulated in the air shower (3). As described above, according to the clean room structure of fig. 1, the dust carry-in from the air shower portion (3) to the quality inspection chamber portion (2) can be greatly reduced.
Here, in the quality inspection chamber section (2), the vicinity of the separation between the air shower section (3) and the potential decay time is represented by the X point as shown in fig. 2, which is an A-A line end view in the quality inspection chamber structure for a polycrystalline silicon chunk of fig. 1. That is, the X point is a position separated from the midpoint of the opening width of the partition by a distance of 1/5cm of the opening width Wcm in the right-angle direction toward the indoor side. The ambient air in the lower portion near the partition is defined as the ambient air in the space portion Y separated upward from the ground position corresponding to the X point by a distance of 1/3 of the height H of the ceiling. The potential decay time of the ambient air may be measured in the same manner as in the case of the ion air emitted from the air injection port (7).
In order to provide the above-mentioned capability of eliminating electric charges with a certain intensity to the ambient air in the lower part near the separation from the air shower part (3), an ionizer (13) is provided near the separation from the air shower part in the ceiling of the quality inspection chamber part (2) as shown in fig. 2. That is, although the quality inspection room section (2) is a clean room, since the inspection is a work requiring a higher degree of cleanliness, in order to perform the work while suppressing the generation of dust, there are many cases where an ionizer (14) is appropriately provided above the vicinity of the inspection table (5) in the ceiling.
However, since the quality inspection of the polycrystalline silicon mass is a fine operation and needs to be performed in a quiet environment with no convection as much as possible, the ionizer (14) cannot be arranged in parallel with the air jet like the ionizer (12) provided in the air shower section (3), and a structure for diffusing ion air in a windless and breeze blowing environment is suitably used. Therefore, even if a structure excellent in the generation amount of ions is used, the diffusion force of the ion air emitted therefrom is much milder than the ejection flow of the air shower in the air shower portion. Further, the quality inspection chamber section (2) has a larger indoor volume than the air shower section (3), so that even if the ionizer (14) is provided above the ceiling in the vicinity of the inspection table (5), the capability of charge elimination of the predetermined constant intensity of the ambient air in the vicinity of the separation section (13) from the air shower section (3) is not normally achieved by the ion air diffused therefrom.
Therefore, as shown in fig. 2, the ionizer (13) is also provided at a position on the ceiling of the quality inspection chamber (2) in the vicinity of the separation from the air shower portion, and the capacity of removing ambient air in the lower portion in the vicinity of the separation from the air shower portion (3) is improved until the predetermined property is satisfied. When the A-A line end surface view of the quality inspection chamber section (2) of fig. 2 is used in the vicinity of the separation between the ceiling of the quality inspection chamber section (2) and the air shower section, the region Z is defined to be a region within an arc of 2m, more preferably within an arc of 1.5m, with a position corresponding to the point X representing the vicinity of the separation between the air shower section (3) as the center point.
In the quality inspection chamber structure for polycrystalline silicon blocks shown in fig. 1, metal particles, specifically, particles of aluminum, zinc, phosphorus, copper, boron, etc. are released from equipment provided in the air shower portion (3), and in order to prevent the particles from remaining in the chamber, it is preferable to take time for the material and the installation form of these equipment. For example, in the case where an air flow space communicating with the air jet port in the wall of the air shower portion is provided with an air shower control substrate, the air shower control substrate is stored in a stainless steel alloy or resin case, and more preferably in a stainless steel alloy case (17) and maintained. Thus, the metal particles released from the air shower control substrate remain inside the case (17), so that the metal particles can be prevented from remaining outside the case (17) in the air shower portion (3).
In the case where a communication speaker, a lighting fixture, or the like is provided on the wall surface of the air shower, the electronic components such as the substrate are preferably surrounded and cured as much as possible by the stainless steel alloy or resin case, and more preferably by the stainless steel alloy plate. Similarly, in the case where an air cleaning filter (dust collecting filter (11)) is provided in the air communication space in the wall portion, it is preferable that a device for generating pollution is disposed before passing through the air cleaning filter.
Further, an air cleaning filter (10) is provided in a wall portion hollow portion (9) for an air flow path in the wall portion of the air shower; in the case of the dust collecting filter (11), there is also a concern of boron contamination from the raw material, and it is preferable to use a filter without boron.
Examples
Hereinafter, the present utility model will be described in further detail with reference to examples, but the present utility model is not limited to these examples.
Example 1 and comparative example 1
In the quality inspection chamber structure for polycrystalline silicon chunk shown in fig. 1 to 3, a test for measuring the cleanliness of the internal air of the air shower portion (2) described below was performed. The respective states of the quality inspection chamber structure are as follows.
[ State of quality inspection Chamber Structure ]
Area of the quality inspection chamber section (2): 136m 2
Area of the air shower portion (3): 0.75m 2
Opening width of the separation part of the air blowing chamber part (3) and the quality inspection chamber part (2) and the separation part of the air blowing chamber part (3) and the external space (4): 78.5cm, open area: 15230cm 2
Grade of cleanliness of the quality inspection room section (2): 100
Potential [ 100V ] decay time of ion air flow when the air shower portion (3) sprays ion air: at the center of the air shower, 1/3 of the height from the floor to the ceiling and 2/3 of the height were 8 seconds for both positive and negative charges
Indoor pressure of the quality inspection chamber section (2): 3Pa (when the air shower operation is stopped, the indoor pressure of the quality inspection chamber part (2) is 1Pa higher than the indoor pressure of the air shower part (3))
An ionizer (13) provided in the ceiling near the separation from the air shower portion (3) in the quality inspection chamber portion (2): operation [ operation of ionizer (14) disposed above the vicinity of inspection stage (5) ]
The potential decay time of the ambient air in the lower part near the separation from the air shower part (3) after the operation adjustment of the ionizer (13): positive and negative charges of 20 seconds
The air shower control substrate provided in the wall of the air shower portion (3) is housed in a stainless steel alloy case
In the air shower part (3), 1 worker takes a bath of air and then enters the quality inspection room part (2), and thereafter the air shower part (3) maintains a silent state in which no person enters for 3 hours. After 3 hours have passed, an adhesive tape (5X 10 mm) was attached to the desired 3 positions of the upper, middle and lower parts of the air shower part (3) near the lateral center of the wall part on the side where the air outlet (8) of the air shower part (3) was provided, and the adhesive tape was gently torn off to transfer particles adhering to the wall surface on the adhesive surface.
After the transfer treatment of the adhesion particles, particle analysis was performed by observing an image obtained by tearing off the adhesive surface of the adhesive tape at a magnification of 34 times by using an image analysis device, and the adhesion area of 11mm 2 per unit area was calculated with respect to the adhesion particles having a particle diameter of 4 μm or more.
Next, as a comparative example, the same measurement of the cleanliness of the internal air of the air shower portion (3) was performed again in the same state, except that the following conditions of the quality inspection chamber structure were changed.
An ionizer (13) provided in the ceiling near the separation from the air shower portion (3) in the quality inspection chamber portion (2): non-operation [ operation of ionizer (14) disposed above the vicinity of inspection stage (5) ]
Potential decay time of ambient air in the lower part near the separation from the air shower part (3): positive and negative charges of 120 seconds
After the transfer treatment of the adhering particles, particle analysis was performed by observing an image obtained by tearing off the adhesive surface of the adhesive tape at a magnification of 34 times by using an image analysis device, and the adhering particle area per unit area of 11mm 2 was calculated in the same manner with respect to the adhering particles having a particle diameter of 4 μm or more.
After the implementation of the above examples and comparative examples, the ratio of the attached area to the attached area of the former (comparative example) was found by taking the attached area of the former (example) as 100 for the upper, middle and lower portions of the wall portion to which the transfer treatment of the attached particles was performed, and is shown in table 1.
[ Table 1]
As shown in table 1, in example 1 in which the ionizer (13) provided in the ceiling near the separation from the air shower portion (3) in the quality inspection chamber portion (2) was operated, the number of particles adhering to the wall portion and transferred to the adhesive tape was significantly reduced as compared with comparative example 1 in which the ionizer was not operated. From this, it was confirmed that in the quality inspection chamber structure of example 1, even if the air shower portion (3) is open, in a state where there is no closed door at each partition between the quality inspection chamber portion and the external space, the ionizer (13) is operated to improve the charge eliminating ability of the ambient air in the vicinity of the partition between the air shower portion (3), and also to satisfactorily suppress leakage of dust into the quality inspection chamber portion (2).
Description of the reference numerals
1: Quality inspection room structure for polycrystalline silicon block
2: Quality inspection room
3: Air shower part
4: External space
5: Inspection bench
6: Polycrystalline silicon block
7: Air jet
8: Exhaust port
9: Hollow part in wall part
10: Dust filter
11: Dust collecting filter
12: Ionizer arranged on air shower part
13: Ionizer provided near the separation between the quality inspection chamber and the air shower
14: Ionizer provided in the upper part near the inspection table (5) of the quality inspection chamber
15: Operator
16: Air supply fan
17: Stainless steel alloy box for accommodating air shower control substrate
Claims (3)
1. A quality inspection chamber structure for polysilicon blocks is characterized in that,
Comprises a quality inspection chamber part and an air shower part for entering and exiting the chamber, wherein the quality inspection chamber part is composed of a clean room with the cleanliness of less than or equal to 1000, the air shower part is connected with the quality inspection chamber part,
The air shower part sprays ion air from a plurality of air spraying ports arranged on one wall surface,
The quality inspection chamber structure for the polycrystalline silicon block is an open type structure in which a closed door is not arranged at the separation part of the air shower part and the quality inspection chamber part and the separation part of the air shower part and an external space,
The indoor pressure of the quality inspection chamber is regulated to be at least 0.5Pa higher than the indoor pressure of the air shower chamber when the air shower operation is stopped,
An ionizer is provided on the ceiling of the quality inspection chamber portion at least in the vicinity of a partition from the air shower portion,
By diffusion of the ion air from the ionizer, the ambient air in the lower portion near the separation of the quality inspection chamber portion from the air shower portion has the following properties: when the air shower operation is stopped, 1000V is applied to the charged plate as the absolute value of the test voltage, and then the potential decay time from the absolute value of the potential of the charged plate to 100V is 1 minute or less for positive and negative polarities, respectively.
2. The quality inspection chamber structure for polycrystalline silicon chunk according to claim 1, wherein,
In the air shower portion, when the ion air is ejected from the air ejection port, the potential decay time of the ion air flow at each position of 1/3 of the height from the floor to the ceiling and 2/3 of the height is within 10 seconds for positive polarity and negative polarity, respectively, in the central portion of the air shower portion.
3. The quality control chamber structure for a polycrystalline silicon chunk according to claim 1 or 2, wherein,
An air shower control substrate is provided in an air circulation space communicating with the air injection port in a wall portion of the air shower portion, and the air shower control substrate is accommodated in a stainless steel alloy case.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022202369 | 2022-12-19 | ||
| JP2022-202369 | 2022-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221694614U true CN221694614U (en) | 2024-09-13 |
Family
ID=91507312
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311728400.XA Pending CN118218324A (en) | 2022-12-19 | 2023-12-15 | Quality inspection room structure for polycrystalline silicon block |
| CN202323425791.6U Active CN221694614U (en) | 2022-12-19 | 2023-12-15 | Quality inspection room structure for polycrystalline silicon block |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311728400.XA Pending CN118218324A (en) | 2022-12-19 | 2023-12-15 | Quality inspection room structure for polycrystalline silicon block |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN118218324A (en) |
| WO (1) | WO2024135509A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4629282B2 (en) * | 2001-08-28 | 2011-02-09 | 高砂熱学工業株式会社 | Dust-proof device for clean room entrance |
| DE102012202640A1 (en) * | 2012-02-21 | 2013-08-22 | Wacker Chemie Ag | Polycrystalline silicon fragment and method of cleaning polycrystalline silicon fragments |
| JP5881227B1 (en) * | 2015-08-07 | 2016-03-09 | 有限会社川野技研 | Air curtain device |
| JP6931269B2 (en) * | 2016-05-11 | 2021-09-01 | シャープ株式会社 | Static elimination and dust removal method and air shower device |
| JP2022149561A (en) * | 2021-03-25 | 2022-10-07 | 大和ハウス工業株式会社 | dust removal system |
-
2023
- 2023-12-14 WO PCT/JP2023/044766 patent/WO2024135509A1/en unknown
- 2023-12-15 CN CN202311728400.XA patent/CN118218324A/en active Pending
- 2023-12-15 CN CN202323425791.6U patent/CN221694614U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN118218324A (en) | 2024-06-21 |
| WO2024135509A1 (en) | 2024-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100912981B1 (en) | Ionized Air Flow Discharge Type Non-Dusting Ionizer | |
| US8372372B2 (en) | Clean bench and method of producing raw material for single crystal silicon | |
| JP2930702B2 (en) | Air ionization system | |
| JP2001189199A (en) | Ion generator and charge neutralizing device | |
| LV10932B (en) | Procedure and apparatus for the purification of air,flue gases or equivalent | |
| GB2243538A (en) | Apparatus for washing semiconductor materials | |
| KR20100038382A (en) | Device for charging dry air or nitrogen gas into semiconductor wafer storage container and wafer static charge removing apparatus utilizing the device | |
| US5883934A (en) | Method and apparatus for controlling ions | |
| KR19980077235A (en) | Filtration efficiency measuring device of dustproof fabric and its measuring method | |
| US5249094A (en) | Pulsed-DC ionizer | |
| CN221694614U (en) | Quality inspection room structure for polycrystalline silicon block | |
| US20050087136A1 (en) | Particle sticking prevention apparatus and plasma processing apparatus | |
| CN106233433B (en) | Etaching device, engraving method, the manufacturing method of substrate and substrate | |
| JP4409884B2 (en) | Ultrasonic atomizing dustless ionizer and ultrasonic atomizing static elimination or dust removal system | |
| WO1991003143A1 (en) | Special ion emitter tip materials and coatings | |
| JP4614569B2 (en) | Suction type ionizer | |
| JP2017203582A (en) | Neutralization and de-dusting method and air shower device | |
| JP7504328B1 (en) | Quality inspection room structure for polycrystalline silicon blocks | |
| JP4409641B2 (en) | Air ionization apparatus and method | |
| JP2838856B2 (en) | Corona air ionizer | |
| Son et al. | Use of an electrostatic precipitator with wet-porous electrode arrays for removal of air pollution at a precision manufacturing facility | |
| CN100437901C (en) | Particle sticking prevention apparatus and plasma processing apparatus | |
| JP2007227619A (en) | Charger for charging dry air or nitrogen gas into semiconductor wafer container, and wafer static electricity remover using same | |
| KR100566031B1 (en) | Dust cleaning apparatus | |
| JPS5756056A (en) | Electrostatic precipitator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |