CN221211217U - Substrate cleaning member and substrate processing apparatus - Google Patents

Abstract

The present disclosure relates to a substrate cleaning member and a substrate processing apparatus capable of realizing high efficiency of processing of a substrate. The substrate cleaning member includes: a first member having a first contact surface capable of cleaning or polishing a main surface by moving along the main surface in a state where the first contact surface is in contact with the main surface of the substrate; a second member having a second contact surface capable of cleaning the main surface by moving along the main surface in a state where the second contact surface is in contact with the main surface; a lower member that supports the second member so that the second contact surface protrudes in an axial direction along which the axis extends from the first contact surface; and a base for supporting the first member, the second member, and the lower member. The second contact surface is formed with at least one of surface roughness and hardness different from that of the first contact surface, and the lower member is formed of a material softer than the second member so that a position of the second contact surface is close to a position of the first contact surface in the axial direction when the second member receives a contact force from the main surface.

Description

Substrate cleaning member and substrate processing apparatus

Technical Field

The present disclosure relates to a substrate cleaning member and a substrate processing apparatus.

Background

Patent document 1 discloses, as a device for cleaning the back surface of a substrate, a structure related to a cleaning member that contacts the back surface of the substrate and cleans the back surface of the substrate when the substrate is held on a spin-holding plate.

Prior art literature

Patent literature

Patent document 1: japanese patent application laid-open No. 2015-23248

Disclosure of utility model

Problems to be solved by the utility model

The present disclosure provides a substrate cleaning member, a substrate processing apparatus, and a substrate cleaning method, which are useful for improving efficiency of processing of a substrate.

Solution for solving the problem

The substrate cleaning member according to the first aspect of the present disclosure includes: a first member having a first contact surface with an outer edge formed along a circumference around a prescribed axis, the first member being capable of cleaning or polishing a main surface by moving along the main surface in a state where the first contact surface is in contact with the main surface of the substrate; a second member having a second contact surface with an outer edge formed along the circumference on an outer side or an inner side of the first contact surface, the second member being capable of cleaning the main surface by moving along the main surface in a state where the second contact surface is in contact with the main surface; a lower member that supports the second member such that the second contact surface protrudes in an axial direction along which the axis extends from the first contact surface; and a base that supports the first member, the second member, and the lower member. The second contact surface is formed with at least one of surface roughness and hardness different from that of the first contact surface, and the lower member is formed with a material softer than the second member such that a position of the second contact surface is close to a position of the first contact surface in an axial direction when the second member receives a contact force from the main surface.

A second aspect of the present disclosure provides the substrate cleaning member according to the foregoing first aspect, wherein the second member and the lower member are each formed of a material containing air holes, and the aperture of the air holes in the lower member is larger than the aperture of the air holes in the second member.

A third aspect of the present disclosure provides the substrate cleaning member according to the first aspect, further comprising a middle member disposed between the second member and the lower member, wherein the middle member is formed of a harder material than the second member and the lower member, and the second member, the middle member, and the lower member are formed in a ring shape so as to extend along the circumference.

A fourth aspect of the present disclosure provides the substrate cleaning member according to the foregoing third aspect, wherein a lower end of the middle layer member is located above the first contact surface or at least a part of the middle layer member is located at the same height position as the first contact surface in the axial direction.

A fifth aspect of the present disclosure provides the substrate cleaning member according to the foregoing third or fourth aspect, wherein the length in the axial direction of the lower layer member is larger than the length in the axial direction of the second member.

A sixth aspect of the present disclosure provides the substrate cleaning member according to the foregoing third or fourth aspect, wherein the width of the lower layer member substantially coincides with the width of the second member in the radial direction of the circumference.

A seventh aspect of the present disclosure provides the substrate cleaning member according to the foregoing third or fourth aspect, wherein at least a portion of the lower layer member is formed in such a manner that a width in a radial direction of the circumference becomes larger as it goes away from the second contact surface, and is in contact with a supporting portion that supports the first member.

A substrate processing apparatus according to an eighth aspect of the present disclosure includes: the substrate cleaning member according to the foregoing first to third aspects; a substrate holding unit that holds the substrate; and a driving section that moves the first contact surface and the second contact surface along the main surface of the substrate held by the substrate holding section.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present disclosure, there are provided a substrate cleaning member, a substrate processing apparatus, and a substrate cleaning method, which are useful for improving efficiency of processing of a substrate.

Drawings

Fig. 1 is a schematic view showing an example of a substrate processing system.

Fig. 2 is a schematic diagram showing an example of the coating and developing apparatus.

Fig. 3 is a plan view schematically showing an example of the polishing unit.

Fig. 4 is a side view schematically showing an example of the polishing unit.

Fig. 5a, 5b and 5c are schematic views showing an example of the substrate cleaning member.

Fig. 6a, 6b and 6c are schematic views showing an example of the substrate cleaning member.

Fig. 7 is a flowchart showing an example of a substrate cleaning method.

Fig. 8 is a schematic diagram for explaining an example of a substrate cleaning method.

Fig. 9 is a schematic diagram for explaining an example of a substrate cleaning method.

Fig. 10 is a schematic diagram for explaining an example of a substrate cleaning method.

Fig. 11 is a schematic diagram for explaining an example of a substrate cleaning method.

Fig. 12 is a schematic view showing an example of a substrate cleaning member.

Fig. 13 is a schematic view showing an example of a substrate cleaning member.

Detailed Description

An embodiment will be described below with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and repetitive description thereof will be omitted. In some of the drawings, an orthogonal coordinate system defined by an X-axis, a Y-axis, and a Z-axis is shown. In the following embodiments, the Z axis corresponds to the up-down direction, and the X and Y axes correspond to the horizontal direction. The positive Z-axis direction corresponds to the vertical upward direction, and the negative Z-axis direction corresponds to the vertical downward direction.

[ Substrate processing apparatus ]

The substrate processing system 1 (substrate processing apparatus) shown in fig. 1 is a system that forms a photosensitive film on a workpiece W, exposes the photosensitive film, and develops the photosensitive film. The workpiece W to be processed is, for example, a substrate, or a substrate in a state where a film, a circuit, or the like is formed by performing a predetermined process. As an example, the substrate is a silicon wafer. The workpiece W (substrate) may be circular. The work W may be a glass substrate, a mask substrate, or an FPD (FLAT PANEL DISPLAY: flat panel display) or the like.

In the case where there is a bevel (chamfer) at the edge of the workpiece W, the "surface" of the workpiece W in the present disclosure also includes a bevel portion when viewed from the surface side of the workpiece W, and the "back surface" of the workpiece W also includes a bevel portion when viewed from the back surface side of the workpiece W. The surface of the workpiece W (hereinafter, referred to as "surface Wa") is a main surface of the pair of main surfaces of the workpiece W on which the photosensitive coating is formed. The back surface (hereinafter, referred to as "back surface Wb") of the work W is a main surface on the opposite side from the surface Wa of the pair of main surfaces. The photosensitive coating is, for example, a resist film.

As shown in fig. 1 and 2, the substrate processing system 1 includes a coating and developing apparatus 2, an exposure apparatus 3, and a control apparatus 100. The exposure device 3 is a device for exposing a resist film (photosensitive film) formed on a workpiece W (substrate). Specifically, the exposure device 3 irradiates the exposure target portion of the resist film with energy rays by a method such as immersion exposure. The energy ray may be, for example, ionizing radiation or non-ionizing radiation.

Before the exposure process by the exposure device 3, the coating and developing device 2 (substrate processing device) performs a process of forming a resist film by coating a resist on the surface Wa of the workpiece W. The coating and developing apparatus 2 may perform development processing of the resist film after exposure processing in addition to processing of forming the resist film. The exposure device 3 selectively irradiates the exposure target portion of the resist film before the development treatment with energy rays. The coating and developing apparatus 2 includes, for example, a carrier block 4, a process block 5, an interface block 6, and a polishing unit 20.

The carrier block 4 guides the work W into the coating and developing apparatus 2 and guides the work W out of the coating and developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for the workpiece W, and incorporates a conveyor A1 including a delivery arm. The carrier C accommodates a plurality of round workpieces W, for example. The conveyor A1 takes out the workpiece W from the carrier C, transfers the workpiece W to the processing block 5, receives the workpiece W from the processing block 5, and returns the workpiece W to the carrier C. The processing block 5 has processing modules 11, 12, 13, 14.

The processing module 11 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveying device A3 for conveying the workpiece W to these units. The processing module 11 forms a lower layer film on the surface Wa of the workpiece W by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 supplies a processing liquid for forming a lower layer film to the surface Wa of the workpiece W, and applies the processing liquid to the surface Wa of the workpiece W. The heat treatment unit U2 performs various heat treatments accompanied with formation of the underlying film.

The processing module 12 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveying device A3 for conveying the workpiece W to these units. The processing module 12 forms a resist film on the underlying film by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 supplies a processing liquid for forming a resist film to the surface Wa of the workpiece W, and applies the processing liquid onto the underlying film. The heat treatment unit U2 performs various heat treatments accompanied with formation of a resist film.

The processing module 13 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyor A3 for conveying the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 supplies a processing liquid for forming an upper layer film to the surface Wa of the workpiece W, and applies the processing liquid onto the resist film. The heat treatment unit U2 performs various heat treatments accompanied with the formation of the upper layer film.

The processing module 14 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveying device A3 for conveying the workpiece W to these units. The processing module 14 performs development processing of the resist film subjected to the exposure processing and heat treatment performed along with the development processing by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 is a unit that performs liquid processing (developing processing) using a developing solution on the supply W. The liquid processing unit U1 supplies a developing solution to the surface Wa of the workpiece W after exposure, and performs a developing process of a resist film formed on the surface Wa of the workpiece W. The liquid processing unit U1 washes out the developer on the surface Wa of the workpiece W by the rinse liquid after development with the developer. The heat treatment unit U2 performs various heat treatments accompanied with the development treatment. Specific examples of the heat treatment include a heat treatment before development (PEB: post Exposure Bake: post baking) and a heat treatment after development (PB: post Bake: post baking).

A rack unit U10 is provided in the process block 5 on the carrier block 4 side. The rack unit U10 is divided into a plurality of cells arranged in the up-down direction. A conveyor A7 including a lifting arm is provided near the rack unit U10. The conveyor A7 lifts and lowers the workpiece W between the cells of the rack unit U10.

A rack unit U11 is provided in the processing block 5 on the interface block 6 side. The rack unit U11 is divided into a plurality of cells arranged in the up-down direction.

The interface block 6 transfers the workpiece W to and from the exposure device 3. For example, the interface block 6 is incorporated with a carrier device A8 including a transfer arm, and is connected to the exposure device 3. The conveyor A8 conveys the workpiece W placed in the rack unit U11 to the polishing unit 20, and transfers the workpiece W polished by the polishing unit 20 to the exposure device 3. The conveyor A8 receives the workpiece W from the exposure device 3 and returns the workpiece W to the rack unit U11. Further, details of the grinding unit 20 will be described later.

The control device 100 controls, for example, various devices (units) included in the coating and developing device 2. The control device 100 is composed of one or more control computers. In the case where the control device 100 is configured by a plurality of control computers, the plurality of control computers may be connected to each other so as to be able to communicate with each other.

The control device 100 has a memory unit and a control unit, for example, as functional configurations. The memory unit of the control device 100 stores programs for operating various units and various devices included in the coating and developing device 2. The memory of the control device 100 also stores various data (for example, information on signals for operating processing units such as the polishing unit 20 included in the coating and developing device 2) and information from sensors provided in the respective units.

The storage unit of the control device 100 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an opto-magnetic recording disk. The program may be contained in an external storage device separate from the storage unit of the control device 100 or in an intangible medium such as a propagated signal. The program may be installed from these other media to the storage unit of the control device 100, and stored in the storage unit of the control device 100. The control section of the control device 100 controls the operations of various units and various devices included in the coating and developing device 2 based on the program read from the storage section.

The control device 100 controls the coating and developing device 2 to perform coating and developing processing for one workpiece W, for example, according to the following procedure. First, the control device 100 controls the conveying device A1 to convey the workpiece W in the carrier C to the rack unit U10, and controls the conveying device A7 to dispose the workpiece W on the floor for the process module 11.

Next, the control device 100 controls the conveying device A3 to convey the work W of the rack unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 11. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form a lower layer film on the surface Wa of the workpiece W. Thereafter, the control device 100 controls the conveyance device A3 to return the workpiece W on which the lower film is formed to the rack unit U10, and controls the conveyance device A7 to dispose the workpiece W on the layer for the process module 12.

Next, the control device 100 controls the conveying device A3 to convey the work W of the rack unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 12. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form a resist film on the lower film of the workpiece W. Thereafter, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U10, and controls the conveying device A7 to dispose the workpiece W on the layer for the process module 13.

Next, the control device 100 controls the conveying device A3 to convey the workpiece W of the rack unit U10 to each unit in the process module 13. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form an upper layer film on the resist film of the workpiece W. Thereafter, the control device 100 controls the conveying device A3 to convey the workpiece W to the rack unit U11.

Next, the control device 100 controls the conveying device A8 to carry the workpiece W of the rack unit U11 into the polishing unit 20, and to send out the workpiece W polished by the polishing unit 20 to the exposure device 3. Thereafter, the control device 100 controls the conveying device A8 to receive the workpiece W subjected to the exposure processing from the exposure device 3, and to dispose the workpiece W in the stage for the processing module 14 in the rack unit U11.

Next, the control device 100 controls the conveying device A3 to convey the workpiece W of the rack unit U11 to each unit in the process module 14, and controls the liquid processing unit U1 and the heat processing unit U2 to perform development processing on the resist film of the workpiece W. Thereafter, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U10, and controls the conveying device A7 and the conveying device A1 to return the workpiece W to the carrier C. Through the above processing, the coating and developing processing for one workpiece W is completed. The control device 100 similarly executes the coating and developing process for each of the other plurality of workpieces W.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the substrate processing system 1 illustrated above. For example, the polishing unit 20 may be provided to any one of the process modules 11, 12, 13, 14, or may be provided outside the coating and developing apparatus 2, unlike the example shown in fig. 2.

(Grinding Unit)

Next, an example of the polishing unit 20 will be described with reference to fig. 3 to 6 c. The polishing unit 20 (substrate processing apparatus) is a unit that performs polishing and cleaning processes on the back surface Wb of the workpiece W. The polishing unit 20 includes a polishing/cleaning mechanism capable of performing both polishing and cleaning, and the polishing/cleaning mechanism polishes the rear surface Wb and then cleans the rear surface Wb. Next, each member included in the polishing unit 20 illustrated in fig. 3 and 4 will be described.

The polishing unit 20 includes a housing 21, a pair of suction pads 24, a pair of support plates 26, a frame 28, a rotary holding disk (holding disk) 22, and an upper cup 29. The housing 21 accommodates at least a part of various members included in the polishing unit 20. The housing 21 is formed with an opening on the upper surface. In the example shown in fig. 3, one pair of side walls of the housing 21 extends in the X-axis direction, and the other pair of side walls extends in the Y-axis direction.

The pair (two) of suction pads 24 function as substrate holding portions for holding the workpiece W. The pair of suction pads 24 hold the work W so as to horizontally level the work W by sucking the back surface Wb of the work W. The pair of suction pads 24 are each formed in a rectangular shape so as to extend in the Y-axis direction. The pair of suction pads 24 are disposed across the rotary holding disk 22 in the X-axis direction. The pair of suction pads 24 holds the outer peripheral region in the back surface Wb of the workpiece W.

The pair of support plates 26 are provided so as to correspond to the pair of suction pads 24, and the pair of support plates 26 support the corresponding suction pads 24, respectively. The pair of support plates 26 are formed so as to extend in the Y-axis direction, and the length of the support plates 26 in the Y-axis direction is longer than the length of the suction pad 24 in the Y-axis direction. Both ends of the support plate 26 in the Y-axis direction are connected (fixed) to the frame 28. The frame 28 is provided so as to be movable in each of the horizontal direction (Y-axis direction in fig. 3) and the up-down direction (Z-axis direction in fig. 3). A driving mechanism for moving the frame 28 in each of the Y-axis direction and the Z-axis direction is connected to the frame 28.

The upper cup 29 is provided at the upper end of the frame 28. The upper cup 29 is formed in an annular shape, and a circular opening 29a is formed in the upper surface of the upper cup 29. The diameter of the opening 29a is larger than the diameter of the workpiece W. The workpiece W is transferred between a carrier (e.g., carrier A8) provided outside the polishing unit 20 and the pair of suction pads 24 through the opening 29a.

The rotary holding disk 22 functions as a substrate holding portion for holding the workpiece W. The rotary holding tray 22 can receive the work W from the pair of suction pads 24, and hold the work W so that the work W is horizontal by sucking the back surface Wb of the work W. The rotary holding disk 22 holds a central region of the back surface Wb of the workpiece W located inside the outer peripheral region. The rotary holding disk 22 is formed in a circular plate shape, and the diameter of the rotary holding disk 22 is smaller than the diameter of the workpiece W.

As shown in fig. 4, the grinding unit 20 has a shaft 31 and a driving mechanism 32. The rotary holding disk 22 is connected to a drive mechanism 32 via a shaft 31. The drive mechanism 32 rotates the rotation-maintaining coil about a vertical axis passing through the center of the rotation-maintaining plate 22. In addition, the driving mechanism 32 moves the rotary holding plate 22 in the up-down direction. The vertical position of the rotary holding disk 22 is changed by the vertical driving by the driving mechanism 32, and thus the force (contact force) applied to the polishing cleaning mechanism 50 when it contacts the workpiece W held by the rotary holding disk 22 can be adjusted, which will be described in detail later.

The polishing unit 20 has a plurality of lift pins 34. The plurality of lift pins 34 are provided so as to surround the rotary holding plate 22 in a plan view (when viewed from above). The plurality of lift pins 34 can be lifted by a lift driving mechanism. The workpiece W can be transferred between the plurality of lift pins 34 and a conveyor provided outside the polishing unit 20.

The polishing unit 20 has a cleaning nozzle 36, a gas nozzle 37, a nozzle arm 38, and a drive mechanism 39. The cleaning nozzle 36 supplies a cleaning liquid to the surface Wa of the workpiece W held by the substrate holding section such as the spin-holding disk 22. The cleaning liquid is, for example, pure water. The gas nozzle 37 blows a dry gas to the surface Wa of the workpiece W held on the substrate holding portion such as the rotary holding disk 22. The drying gas is, for example, nitrogen or clean air. The nozzle arm 38 holds the purge nozzle 36 and the gas nozzle 37. The driving mechanism 39 is connected to the nozzle arm 38 for moving the nozzle arm 38 in the up-down direction and the horizontal direction (Y-axis direction of fig. 3).

As shown in fig. 4, the polishing unit 20 has a drain pipe 42 and an exhaust pipe 44. A drain pipe 42 and an exhaust pipe 44 are provided at the bottom of the housing 21. When polishing and cleaning of the workpiece W are performed, the liquid discharge pipe 42 discharges the liquid (the cleaning liquid or the like) supplied into the housing 21 to the outside of the housing 21. The exhaust pipe 44 discharges the gas in the housing 21 to the outside of the housing 21, thereby forming a downward flow of gas in the housing 21.

< Substrate cleaning Member >

The polishing unit 20 has a polishing cleaning mechanism 50. The polishing and cleaning mechanism 50 functions as a substrate cleaning means for performing at least a cleaning process on the workpiece W. Next, the polishing and cleaning mechanism 50 illustrated in fig. 5a and the like will be described. As shown in fig. 5a, 5b, and 5c, the polishing and cleaning mechanism 50 includes a base 52, a polishing section 60, and a cleaning section 70. The base 52 is a portion for supporting the polishing section 60 and the cleaning section 70. The polishing section 60 and the cleaning section 70 are connected to the base 52.

The base 52 includes a bottom 54 formed in a circular plate shape. The disk-shaped bottom 54 has a diameter smaller than the diameter of the workpiece W. The bottom 54 is disposed in the housing 21 of the polishing unit 20 with its upper surface horizontal. One or more holes penetrating the bottom 54 in the thickness direction thereof may be formed in the bottom 54. The grinding unit 20 has a rotation driving mechanism 48. A rotation driving mechanism 48 is connected to the base 52, and the rotation driving mechanism 48 rotates the base 52 about the central axis Ax (axis). The central axis Ax is a virtual line orthogonal to the upper surface of the bottom 54 and passing through the center of the bottom 54. By the rotation of the base 52 about the central axis Ax, the polishing portion 60 and the cleaning portion 70 supported by the base 52 rotate about the central axis Ax.

The polishing section 60 is a section for polishing at least a part of the back surface Wb of the workpiece W. The lower end of the grinding section 60 is connected to the bottom 54. The polishing section 60 is formed in a ring shape so as to extend along a circumference around the central axis Ax (axis). The polishing portion 60 is located at an outer edge portion (outer edge and vicinity thereof) of the bottom portion 54. Fig. 5b shows a cross-sectional view of the polishing and cleaning mechanism 50 cut through a plane passing through the central axis Ax, and fig. 5c shows an enlarged portion of the cross-sectional view in fig. 5 b. The outer edge of the polishing section 60 substantially coincides with the outer edge of the bottom section 54 as viewed from the extending direction of the central axis Ax (hereinafter referred to as "axial direction"). The axial direction of the central axis Ax corresponds to the Z-axis direction in fig. 5a and the like.

The grinding section 60 includes a grinding member 62 and a support member 64. The abrasive member 62 is disposed on a support member 64, the support member 64 being attached to the upper surface of the base 54. The polishing member 62 and the supporting member 64 are connected to each other by an adhesive or the like. The polishing member 62 and the supporting member 64 are each formed in a ring shape so as to extend along a circumference around the central axis Ax.

The polishing member 62 (first member) includes a polishing surface 62a. The polishing surface 62a (first contact surface) is an upper surface of the polishing member 62 opposite to a lower surface connected to the support member 64, and the polishing surface 62a faces the back surface Wb of the workpiece W. The outer and inner edges of the abrasive surface 62a are formed along a circumference around the central axis Ax, respectively. The polishing member 62 is a member capable of polishing the back surface Wb of the workpiece W by moving along the back surface Wb in a state where the polishing surface 62a is in contact with the back surface Wb. At least the polishing surface 62a of the polishing member 62 is formed of a material capable of polishing the back surface Wb, and polyurethane foam and nonwoven fabric are examples of such a material.

The polishing surface 62a may be constituted by a plurality of portions divided on the circumference around the central axis Ax, as viewed in the axial direction of the central axis Ax. In the present disclosure, forming into a ring includes not only a case of forming continuously on the circumference but also a case of forming discontinuously in a manner of being divided into several parts. In the example shown in fig. 5a, the abrasive surface 62a is divided into four portions on the circumference.

The support member 64 is a member that supports the polishing member 62. The length (thickness) of the support member 64 in the axial direction is larger than the length (thickness) of the polishing member 62 in the axial direction. The width of the support member 64 may be substantially the same as the width of the abrasive member 62. The widths substantially match each other means that the width of one is 0.95 to 1.05 times or 0.98 to 1.02 times the width of the other. The width of the polishing member 62 and the width of the supporting member 64 are defined by the size of each member in the radial direction of the circumference around the central axis Ax (the radial direction of a circle centered on the central axis Ax). The width of the polishing member 62 and the width of the supporting member 64 are substantially fixed at all positions on the circumference around the central axis Ax, and are also substantially fixed at all positions in the axial direction of the central axis Ax.

The cleaning portion 70 is a portion that cleans at least a part of the back surface Wb of the workpiece W. The cleaning portion 70 is formed in a ring shape (cylindrical shape) inside the polishing portion 60 so as to extend along the circumference around the central axis Ax. The outer peripheral surface of the cleaning portion 70 is surrounded by the polishing portion 60 as viewed in the axial direction from the center axis Ax. The shortest distance between the central axis Ax and the cleaning portion 70 is smaller than the shortest distance between the central axis Ax and the polishing portion 60. A gap is formed between the cleaning portion 70 and the polishing portion 60 in a radial direction around the circumference of the central axis Ax.

The cleaning section 70 includes a cleaning member 72, a middle layer member 74, and a lower layer member 76. The cleaning member 72 is disposed on the lower member 76 by the middle member 74, and the lower member 76 is connected to the upper surface of the bottom 54. The cleaning member 72 and the intermediate member 74 are connected to each other by an adhesive or the like. The middle layer member 74 and the lower layer member 76 are connected to each other by an adhesive or the like. The cleaning member 72, the intermediate member 74, and the lower member 76 are each formed in a ring shape so as to extend along a circumference around the central axis Ax.

The cleaning member 72 (second member) includes a cleaning surface 72a. The cleaning surface 72a (second contact surface) is an upper surface of the cleaning member 72 opposite to a lower surface connected to the intermediate member 74, and the cleaning surface 72a faces the rear surface Wb of the workpiece W. The outer edge and the inner edge of the cleaning surface 72a are formed along a circumference around the central axis Ax on the inner side of the polishing surface 62a of the polishing member 62. The cleaning member 72 is a member capable of cleaning the back surface Wb of the workpiece W by moving along the back surface Wb in a state where the cleaning surface 72a is in contact with the back surface Wb. The cleaning surface 72a may be constituted by a plurality of portions divided on a circumference around the central axis Ax as viewed in the axial direction of the central axis Ax.

The cleaning member 72 is formed of a material capable of cleaning the back surface Wb. The cleaning member 72 is formed of a material different from that of the polishing member 62, and examples thereof include polyvinyl alcohol (PVA), polypropylene, and nylon. The cleaning surface 72a of the cleaning member 72 is formed such that at least one of the surface roughness and hardness (surface hardness) thereof is different from the polishing surface 62a of the polishing member 62. Either or both of the surface roughness and the hardness are different between the cleaning surface 72a and the polishing surface 62 a. The surface roughness of each of the cleaning surface 72a and the polishing surface 62a is defined by, for example, an arithmetic average roughness Ra. The surface roughness of the cleaning surface 72a may be larger or smaller than that of the polishing surface 62 a. The hardness of each of the cleaning surface 72a and the polishing surface 62a is defined by, for example, vickers hardness. The cleaning surface 72a may have a lower hardness than the abrasive surface 62 a.

The middle layer member 74 is disposed between the cleaning member 72 and the lower layer member 76. The middle layer member 74 is formed in a plate shape. The middle layer member 74 may be formed of a harder material than the cleaning member 72 and the lower layer member 76, for example, a hard plastic (hard resin). The middle layer member 74 is harder than the cleaning member 72 and harder than the lower layer member 76. Examples of the material for forming the middle layer member 74 include polystyrene, ABS resin, and polyamide. The length of the center axis Ax of the middle member 74 in the axial direction (the thickness of the middle member 74) may be smaller than the length of the cleaning member 72 in the axial direction described above. The thickness of the middle layer member 74 may be smaller than the length of the lower layer member 76 in the axial direction described above. When the intermediate member 74 is formed of a harder material than the cleaning member 72 and the lower member 76, the rigidity of the entire cleaning portion 70 increases.

In the axial direction of the central axis Ax, the lower end (lower surface) of the intermediate member 74 is located above the polishing surface 62 a. In this case, the distance in the axial direction between the lower end of the middle layer member 74 and the bottom 54 is larger than the distance in the axial direction between the polishing surface 62a and the bottom 54. Unlike the example shown in fig. 5c, at least a part of the middle layer member 74 may be positioned at the same height position as the polishing surface 62a in the axial direction of the central axis Ax. The heights (height positions) of the various members included in the polishing section 60 and the cleaning section 70 are defined by the shortest distance from the bottom 54 in the axial direction of the central axis Ax. The above-described various positional relationships between the intermediate layer member 74 and the polishing surface 62a are positional relationships between each other in a state in which no external force is applied to the cleaning member 72 and the polishing member 62.

The lower member 76 is a member for supporting the cleaning member 72 via the middle member 74. The lower member 76 supports the cleaning member 72 such that the cleaning surface 72a protrudes in the axial direction of the central axis Ax from the polishing surface 62 a. The distance in the axial direction between the cleaning surface 72a and the bottom 54 is larger than the distance in the axial direction between the polishing surface 62a and the bottom 54. The length of the lower member 76 in the axial direction is greater than the length of the cleaning member 72 in the axial direction. For example, the length of the lower member 76 in the axial direction is 1.5 to 10 times, or 2 to 5 times the length of the cleaning member 72 in the axial direction.

The lower member 76 is formed of a softer material than the cleaning member 72. The lower member 76 is formed of a material that is stretchable in the axial direction of the central axis Ax. When the cleaning member 72 receives the contact force from the rear surface Wb, the lower member 76 is contracted to a level where the position (height position) of the cleaning surface 72a is close to the position (height position) of the polishing surface 62a in the axial direction of the central axis Ax. Specifically, when a downward contact force is applied to the cleaning member 72 from the rear surface Wb, the lower member 76 is retracted to a degree that the position of the cleaning surface 72a in the axial direction substantially coincides with the position of the polishing surface 62a, and the polishing surface 62a can be brought into contact with the rear surface Wb in addition to the cleaning surface 72 a.

The cleaning member 72 and the lower member 76 may be formed of a material including air holes (minute holes), respectively. The pore size in the lower member 76 may be larger than the pore size in the cleaning member 72. The pore diameters of the respective cleaning member 72 and the lower member 76 are selected in such a manner that the lower member 76 is softer than the cleaning member 72. The cleaning member 72 and the lower member 76 may be formed of the same (same) material having pore diameters different from each other. The cleaning member 72 and the lower member 76 are, for example, PVA sponge, respectively. In one example, the cleaning member 72 may be formed of PVA having a pore diameter (pore size) of 30 μm to 150 μm, and the lower member 76 may be formed of PVA having a pore diameter (pore size) of 150 μm to 500 μm. The pore size of each of the cleaning member 72 and the lower member 76 may be defined by an average pore size, for example, as determined by non-contact measurement using an electron microscope.

The width of the purge member 72, the width of the middle member 74, and the width of the lower member 76 are substantially identical to each other. The respective widths of the cleaning member 72, the middle member 74, and the lower member 76 are defined by the radial dimensions of the circumferences of the respective members about the central axis Ax. The respective widths of the cleaning member 72, the middle member 74, and the lower member 76 are substantially fixed at all positions around the circumference of the central axis Ax, and are also substantially fixed at all positions in the axial direction of the central axis Ax. The width of the lower member 76 is smaller than the width of the support member 64 of the polishing section 60.

Here, the ratio of the width (length) in the radial direction to the length in the axial direction is defined as "radial-to-thickness ratio (japanese-style ratio)". The ratio of the diameter to the thickness of the cleaning portion 70 (the portion constituted by the cleaning member 72, the intermediate member 74, and the lower member 6) is, for example, 0.6 or less, 0.5 or less, or 0.4 or less. The radial thickness ratio of the cleaning portion 70 is obtained by dividing the width of the lower member 76 in the radial direction by the shortest distance in the axial direction between the lower end of the lower member 76 and the cleaning surface 72 a. The cleaning portion 70 has a smaller aspect ratio than the polishing portion 60.

Fig. 6a shows a state (hereinafter referred to as "non-contact state") in which the cleaning surface 72a and the polishing surface 62a face the rear surface Wb of the workpiece W, and neither the cleaning surface 72a nor the polishing surface 62a is in contact with the rear surface Wb, as in fig. 5 c. In the non-contact state, the cleaning surface 72a protrudes upward from the polishing surface 62a as described above. In the non-contact state, when the rear surface Wb is brought closer to the polishing and cleaning mechanism 50 (the cleaning surface 72a and the polishing surface 62 a), the cleaning surface 72a protrudes upward, and therefore the rear surface Wb is not in contact with the polishing surface 62a but in contact with the cleaning surface 72 a. By the rear surface Wb coming into contact with the cleaning surface 72a, a downward contact force (external force toward the bottom 54) acts on the cleaning surface 72a (including the cleaning portion 70 of the cleaning surface 72 a).

When a downward contact force is applied to the cleaning surface 72a, at least the lower member 76 in the cleaning portion 70 contracts (is pressed), and the position in the axial direction of the cleaning surface 72a gradually lowers. If the cleaning surface 72a is continuously pressed downward from the back surface Wb, the cleaning surface 72a is kept in contact with the back surface Wb, and the polishing surface 62a is further in contact with the back surface Wb, as shown in fig. 6 b. That is, both the cleaning surface 72a and the polishing surface 62a are in contact with the rear surface Wb of the workpiece W (hereinafter referred to as "first contact state").

When the back surface Wb is gradually moved away from the cleaning surface 72a and the polishing surface 62a in the first contact state, at least the lower member 76 in the cleaning portion 70 is stretched to return to the original size (the size in the non-contact state). As a result, as shown in fig. 6c, the cleaning surface 72a is kept in contact with the back surface Wb, and the polishing surface 62a is separated from the back surface Wb to release the contact state. That is, the cleaning surface 72a is in contact with the rear surface Wb of the workpiece W, and the polishing surface 62a is not in contact with the rear surface Wb of the workpiece W (hereinafter referred to as "second contact state"). When the back surface W is further separated from the cleaning surface 72a and the polishing surface 62a in the second contact state, the cleaning surface 72a is separated from the back surface Wb, and the contact state is released. Namely, the non-contact state shown in fig. 6a is obtained.

Returning to fig. 3 and 4, the polishing unit 20 has a support body 90, a driving mechanism 92, a cleaning liquid nozzle 96, and a gas nozzle 98. The support body 90 is a member for supporting the polishing and cleaning mechanism 50 in the housing 21. The driving mechanism 92 moves the support body 90 in one horizontal direction (X-axis direction in fig. 3). By the movement of the support body 90 in the X-axis direction, the position of the polishing and cleaning mechanism 50 supported by the support body 90 in the X-axis direction changes.

A cleaning liquid nozzle 96 and a gas nozzle 98 are provided at the front end of the support body 90. The cleaning liquid nozzle 96 is disposed so that its discharge port faces the rear surface Wb, and supplies cleaning liquid to the rear surface Wb. The cleaning liquid supplied from the cleaning liquid nozzle 96 is a liquid for flushing away the polishing dust generated by the polishing of the polishing section 60 and the fine particles removed by the cleaning of the cleaning section 70. The cleaning liquid supplied from the cleaning liquid nozzle 96 is, for example, pure water. The gas nozzle 98 is disposed so that its discharge port faces the rear surface Wb, and supplies gas (gas) to the rear surface Wb. The gas nozzle 98 supplies (blows) gas for drying the cleaning liquid adhering to the back surface Wb after cleaning of the back surface Wb to the back surface Wb. The gas supplied from the gas nozzle 98 is, for example, nitrogen gas.

[ Method for cleaning substrate ]

Next, as an example of the substrate cleaning method, a series of processes performed by the control device 100 that controls at least the polishing unit 20 will be described with reference to fig. 7 to 11. Before a series of processes are performed, the upper surface of the suction pad 24 is disposed at a position higher than the upper surface of the polishing and cleaning mechanism 50, and the upper surface of the rotary holding disk 22 is disposed at a position lower than the upper surface of the polishing and cleaning mechanism 50.

First, the control device 100 executes step S01. In step S01, for example, the control device 100 controls the conveying device A8 and the polishing unit 20 to carry the workpiece W to be processed into the housing 21 of the polishing unit 20. In one example, the control device 100 controls the conveying device A8 to convey the workpiece W above the upper cup 29, and then raises the plurality of lift pins 34 to receive the workpiece W. The control device 100 lowers the plurality of lift pins 34 holding the workpiece W to transfer the workpiece W to the pair of suction pads 24. Thereby, as shown in fig. 8, the workpiece W is held by the pair of suction pads 24. In the polishing and cleaning mechanism 50, the polishing surface 62a of the polishing section 60 and the cleaning surface 72a of the cleaning section 70 face the rear surface Wb of the workpiece W in the non-contact state.

Next, the control device 100 executes step S02. In step S02, for example, the control device 100 controls the polishing unit 20 to perform the first polishing process. In the first polishing step, the control device 100 first controls the polishing unit 20 so that the non-contact state is changed to the first contact state in which both the polishing surface 62a and the cleaning surface 72a are in contact with the rear surface Wb. In one example, the control device 100 lowers the pair of suction pads 24 to first bring the cleaning surface 72a of the cleaning member 72 into contact with the rear surface Wb.

After the cleaning surface 72a contacts the back surface Wb, if the suction pad 24 is further lowered by the control device 100, the lower member 76 of the cleaning member 72 is compressed, and the height position of the cleaning surface 72a gradually approaches the height position of the polishing surface 62 a. When the suction pad 24 is further lowered by the control device 100, the polishing surface 62a is also brought into contact with the back surface Wb, and the first contact state is thereby established. Fig. 9 illustrates a state of transition to the first contact state. The amount by which the pair of adsorption pads 24 is lowered until the first contact state is reached may be set after measurement by a test in advance.

After the transition to the first contact state, the control device 100 controls the polishing unit 20 so that the cleaning liquid nozzle 96 supplies the cleaning liquid to the rear surface Wb, and rotates the base 52 of the polishing cleaning mechanism 50 about the center axis Ax. As shown in fig. 10, the control device 100 controls the polishing unit 20 to move the suction pad 24 together with the workpiece W in the Y-axis direction and to reciprocate the polishing and cleaning mechanism 50 in the X-axis direction by the driving mechanism 92. Thus, the polishing surface 62a moves along the back surface Wb while being in contact with the back surface Wb, and polishing is performed on the area (the area other than the outer peripheral portion) of the back surface Wb located between the pair of suction pads 24. As described above, the driving mechanism 92 for moving the polishing and cleaning mechanism 50 in the X-axis direction and the rotation driving mechanism 48 for rotating the base 52 function as driving units for moving the polishing surface 62a and the cleaning surface 72a along the rear surface Wb of the workpiece W held by the pair of suction pads 24.

Next, the control device 100 executes step S03. In step S03, for example, the control device 100 controls the polishing unit 20 to perform a first cleaning process. In the first cleaning step, the control device 100 first controls the polishing unit 20 so that the first contact state is changed to the second contact state in which the polishing surface 62a is not in contact with the back surface Wb and the cleaning surface 72a is in contact with the back surface Wb. In one example, the control device 100 lowers the polishing and cleaning mechanism 50 by the driving mechanism 92 to gradually move the polishing and cleaning mechanism 50 away from the rear surface Wb, whereby the cleaning surface 72a is kept in contact with the rear surface Wb, and the polishing surface 62a is moved away from the rear surface Wb. Thereby, the first contact state is changed to the second contact state. Fig. 11 illustrates a state after the transition to the second contact state. The amount of lowering the polishing and cleaning mechanism 50 until the second contact state is reached may be set after measurement by a test in advance.

After the transition to the second contact state, the control device 100 controls the polishing unit 20 so that the cleaning liquid nozzle 96 supplies the cleaning liquid to the rear surface Wb, and rotates the base 52 of the polishing cleaning mechanism 50 about the center axis Ax. The control device 100 controls the polishing unit 20 to move the suction pad 24 in the Y-axis direction together with the workpiece W and to reciprocate the polishing and cleaning mechanism 50 in the X-axis direction by the driving mechanism 92 in the same manner as in the polishing process in step S02. Thus, the cleaning surface 72a of the cleaning member 72 moves along the rear surface Wb while being in contact with the rear surface Wb, and performs cleaning treatment on the region (region other than the outer peripheral portion) of the rear surface Wb located between the pair of suction pads 24. After the cleaning process, the control device 100 controls the polishing unit 20 so that the second contact state is shifted to the non-contact state.

Next, the control device 100 executes step S04. In step S04, for example, the control device 100 controls the polishing unit 20 to transfer the workpiece W from the pair of suction pads 24 to the rotary holding disk 22. In one example, the control device 100 controls the polishing unit 20 so that the rotary holding disk 22 is lifted in a state where the center of the workpiece W held by the pair of suction pads 24 substantially coincides with the center of the rotary holding disk 22. Thereby, the rotary holding disk 22 receives the workpiece W, and the workpiece W is held by the rotary holding disk 22.

Next, the control device 100 executes step S05. In step S05, for example, the control device 100 controls the polishing unit 20 to perform the second polishing process. In one example, the control device 100 controls the polishing unit 20 so as to change from the non-contact state to the first contact state in a state in which the polishing surface 62a and the cleaning surface 72a face the outer peripheral portion of the back surface Wb of the workpiece W held by the rotary holding disk 22.

After the first contact state is shifted, the control device 100 controls the polishing unit 20 so that the cleaning liquid nozzle 96 supplies the cleaning liquid to the rear surface Wb and rotates the base 52 of the polishing cleaning mechanism 50 about the central axis Ax. The control device 100 controls the polishing unit 20 so that the workpiece W held on the rotary holding disk 22 rotates about the rotation axis of the rotary holding disk 22, and reciprocates the polishing and cleaning mechanism 50 in the X-axis direction by the driving mechanism 92. Thus, the polishing surface 62a moves along the rear surface Wb while being in contact with the rear surface Wb, and polishing is performed on the outer peripheral portion of the rear surface Wb. The positions of the polishing surface 62a and the cleaning surface 72a relative to the back surface Wb change by the rotation of the rotary holding disk 22. Therefore, the driving mechanism for rotating the rotary holding disk 22 also functions as a driving section for moving the polishing surface 62a and the cleaning surface 72a along the rear surface Wb of the workpiece W held by the rotary holding disk 22.

Next, the control device 100 executes step S06. In step S06, for example, the control device 100 controls the polishing unit 20 to perform the second cleaning process. In the second cleaning step, the control device 100 first controls the polishing unit 20 so that the first contact state is changed to the second contact state.

After the transition to the second contact state, the control device 100 controls the polishing unit 20 so that the cleaning liquid nozzle 96 supplies the cleaning liquid to the rear surface Wb, and rotates the base 52 of the polishing cleaning mechanism 50 about the center axis Ax. The control device 100 controls the polishing unit 20 to rotate the workpiece W around the rotation axis of the rotation holding disk 22 and to reciprocate the polishing and cleaning mechanism 50 in the X-axis direction by the driving mechanism 92 in the same manner as in the polishing process in step S05. Thus, the cleaning surface 72a of the cleaning member 72 moves along the rear surface Wb while being in contact with the rear surface Wb, and performs cleaning treatment on the outer peripheral portion of the rear surface Wb. After the cleaning process, the control device 100 controls the polishing unit 20 so that the second contact state is changed to the non-contact state.

Further, the control device 100 may control the polishing unit 20 to supply the cleaning liquid from the cleaning nozzle 36 to the surface Wa of the workpiece W in parallel with at least a part of steps S02, S03, S05, S06. After performing step S06, the control device 100 may control the polishing unit 20 so that the rotation holding tray 22 continues to rotate in a state in which the workpiece W is held. The control device 100 may control the grinding unit 20 so that the gas for drying is supplied from the gas nozzle 37 to the front face Wa and the gas for drying is supplied from the gas nozzle 98 to the rear face Wb while the rotation of the rotary holding disk 22 is continued. Thereby, the cleaning liquid is removed from the front face Wa and the rear face Wb of the workpiece W.

Next, the control device 100 executes step S07. In step S07, for example, the control device 100 controls the polishing unit 20 and the conveying device A8 to carry out the workpiece W from the polishing unit 20. In one example, the control device 100 controls the polishing unit 20 and the conveying device A3 to transfer the workpiece W from the plurality of lift pins 34 to the conveying device A3 after the plurality of lift pins 34 are lifted up to receive the workpiece W from the rotary holding disk 22. Through the above processing, the substrate cleaning processing including the polishing processing and the cleaning processing is ended for one workpiece W.

Modification example

As shown in fig. 12, the polishing unit 20 may have a polishing cleaning mechanism 50A instead of the polishing cleaning mechanism 50. The polishing cleaning mechanism 50A (substrate cleaning member) is different from the polishing cleaning mechanism 50 in that a cleaning portion 70A is included instead of the cleaning portion 70. The cleaning portion 70A includes a cleaning member 72 and a middle member 74, and includes a lower member 78 instead of the lower member 76. The lower member 78 includes an upper portion 78a and a lower portion 78b arranged in the up-down direction. The upper portion 78a is formed such that the width (length) in the radial direction around the circumference of the central axis Ax becomes larger as it moves away from the cleaning surface 72a of the cleaning member 72. The width of the lower portion 78b is substantially fixed at different positions in the axial direction in which the central axis Ax extends. The outer edge (outer peripheral edge) of the lower end of the upper portion 78a and the outer edge (outer peripheral surface) of the lower portion 78b are in contact with the inner peripheral surface of the support member 64.

As shown in fig. 13, the polishing unit 20 may have a polishing cleaning mechanism 50B instead of the polishing cleaning mechanism 50. The polishing cleaning mechanism 50B (substrate cleaning member) is different from the polishing cleaning mechanism 50 in that a polishing section 60B is included instead of the polishing section 60. The polishing section 60B includes a middle layer member 63 in addition to the polishing member 62 and the supporting member 64. The middle layer member 63 is disposed between the polishing member 62 and the support member 64. The polishing member 62 and the intermediate member 63 are connected to each other by an adhesive or the like. The middle layer member 63 and the support member 64 are connected to each other by an adhesive or the like. The intermediate member 63 is formed in a ring shape so as to extend along the circumference around the central axis Ax, similarly to the polishing member 62 and the support member 64.

The middle layer member 63 may be formed in a plate shape. The thickness of the middle layer member 63 may be about 0.1mm to 4.0 mm. The middle layer member 63 is formed of a material softer than the polishing member 62 and harder than the support member 64. That is, the hardness of the middle layer member 63 is lower than that of the polishing member 62 and higher than that of the supporting member 64. The middle layer member 63 may be formed of a resin material. The resin material forming the middle layer member 63 is, for example, PP (polypropylene), PE (polyethylene), PVC (polyvinyl chloride), polyurethane, polycarbonate, or the like. The middle layer member 63 may be formed by stacking a plurality of members made of different materials.

The positional relationship between the polishing section 60 and the cleaning sections 70, 70A in the radial direction of the circumference is not limited to the above example. The cleaning sections 70, 70A may be disposed outside the polishing section 60. In this case, the cleaning surface 72a of the cleaning member 72 is located outside the polishing surface 62a of the polishing member 62.

The inner members of the polishing section 60 and the cleaning sections 70 and 70A may be formed in a circular plate shape (solid cylindrical shape) instead of in a ring shape (cylindrical shape). In this case, the upper surface (the polishing surface 62a or the cleaning surface 72 a) of the inner member may be formed in a continuous circular shape or may be divided into a plurality of portions formed in a fan shape. In any case, the outer edge of the inner grinding surface 62a or the cleaning surface 72a is formed along a circumference around the central axis Ax.

The coating and developing apparatus 2 may include a cleaning mechanism (substrate cleaning means) having a similar structure to the polishing and cleaning mechanism 50, and having no polishing function but two cleaning functions. The cleaning mechanism has a cleaning portion different from the cleaning portion 70 in the same configuration as the polishing cleaning mechanism 50, instead of the polishing portion 60. The different cleaning portion may be formed in a ring shape (cylindrical shape) on the outer side of the cleaning portion 70, like the polishing portion 60. The different cleaning section has another cleaning member including another cleaning surface (first contact surface) functioning as a cleaning surface. The other cleaning member (first member) can clean the back surface Wb by moving along the back surface Wb in a state where the other cleaning surface is in contact with the back surface Wb. At least one of the surface roughness and the hardness is different between the cleaning surface 72a of the cleaning member 72 and the other cleaning surfaces. The cleaning mechanism having no function of performing the polishing process may perform the cleaning process on the front surface Wa of the workpiece W without performing the cleaning process on the back surface Wb, or may perform the cleaning process on the front surface Wa of the workpiece W with the back surface Wb.

At least some of the matters described in the other examples may be applied to one of the various examples described above.

Summary of the embodiments

The present disclosure includes the following structures (1) to (9).

(1) A substrate cleaning member is provided with: a first member having a first contact surface whose outer edge is formed along a circumference around a prescribed axis Ax, the first member being capable of cleaning or polishing a main surface by moving along the main surface in a state where the first contact surface is in contact with the main surface of the workpiece W; a second member (cleaning member 72) having a second contact surface (cleaning surface 72 a) whose outer edge is formed along the circumference outside or inside the first contact surface, the second member (cleaning member 72) being capable of cleaning the main surface by moving along the main surface in a state where the second contact surface is in contact with the main surface; lower members 76, 78 for supporting the second member so that the second contact surface protrudes in the axial direction along which the central axis Ax extends from the first contact surface; and a base 52 that supports the first member, the second member, and the lower members 76, 78, wherein the second contact surface is formed such that at least one of surface roughness and hardness is different from that of the first contact surface, and the lower members 76, 78 are formed of a softer material than the second member such that when the second member receives a contact force from the main surface, the position of the second contact surface is close to the position of the first contact surface in the axial direction.

In the above substrate cleaning member, the second contact surface of the second member subjected to the cleaning treatment is configured to be brought close to the first contact surface of the first member by the contact force from the main surface. Thus, by adjusting the contact force, it is possible to perform both the cleaning process and the process (for example, polishing process) other than the cleaning process by one substrate cleaning member. In this case, since the preparation period between the two processes can be shortened, the process can be made more efficient. On the other hand, depending on the type of the workpiece W, it is necessary to form a portion constituting the contact surface for cleaning from a hard material. In this case, when only the portion from the base 52 to the contact surface for cleaning is formed with a hard material, the first contact surface for performing other processing may not be in contact with the workpiece W, and may not be sufficiently contracted even if the contact force from the front surface is received. In contrast, in the substrate cleaning member, the second member constituting the second contact surface is supported by the lower member formed of a softer material than the second member. Therefore, even if the second member is formed of a hard material, when receiving the contact force from the surface, the second member can be contracted to such an extent that the first contact surface of the first member can be brought into contact with the main surface of the workpiece W, so that two treatments can be performed by one substrate cleaning member. Therefore, the substrate cleaning member is useful for improving the efficiency of the process.

(2) The substrate cleaning member according to the above (1), wherein the second member and the lower members 76 and 78 are each formed of a material containing pores, and the pore diameters of the pores in the lower members 76 and 78 are larger than the pore diameters of the pores in the second member.

In this case, the lower members 76 and 78 are easily formed to be extendable and retractable as compared with the second member.

(3) The substrate cleaning member according to the above (1) or (2), further comprising a middle member 74, wherein the middle member 74 is disposed between the second member and the lower members 76 and 78, and the middle member 74 is formed of a harder material than the second member and the lower members 76 and 78, and the second member, the middle member 74, and the lower members 76 and 78 are formed in a ring shape so as to extend along the circumference.

The second contact surface of the second member moves along the main surface of the workpiece W while being in contact with the main surface of the workpiece W, and applies a force to the annular portion formed by the second member, the intermediate member 74, and the lower members 76, 78 in the lateral direction intersecting the extending direction. Even when receiving the lateral force, the rigidity of the annular portion is improved by the intermediate member 74, and the possibility that the annular portion falls inward or outward is low. Thus, it is useful for stabilization of the process.

(4) The substrate cleaning member according to the above (3), wherein the lower end of the middle layer member 74 is located above the first contact surface or at least a part of the middle layer member 74 is located at the same height as the first contact surface in the axial direction.

In this case, the length in the axial direction of the lower members 76, 78 which are easily contracted by the contact force from the main surface of the workpiece W is made larger than the length in the axial direction of the second member. This makes it possible to perform cleaning in accordance with the type of the workpiece W, and to perform two processes more reliably.

(5) The substrate cleaning member according to the above (3) or (4), wherein the lower members 76 and 78 have a length in the axial direction larger than that of the second member.

In this case, the position of the second contact surface can be made closer to the first contact surface more reliably by the contact force from the main surface of the workpiece W. Thus, cleaning can be performed in accordance with the kind of the workpiece W, and two processes can be performed more reliably.

(6) The substrate cleaning member according to the above (3) or (4), wherein the width of the lower member 76 substantially coincides with the width of the second member in the radial direction of the circumference.

In this case, the area of the portion including the lower member 76 and the second member when viewed from the axial direction can be reduced as compared with the case where the width of the lower member 76 is larger than the width of the second member. Thus, it is useful for simplification of the substrate cleaning member.

(7) According to the substrate cleaning member described in the above (3) or (4), at least a part of the lower member 78 is formed so that the width in the radial direction of the circumference becomes larger as it goes away from the second contact surface, and is in contact with the supporting portion (supporting member 64) that supports the first member.

In this case, the portion including the lower member 78 and the second member is not liable to fall down even if receiving a force in the lateral direction along the main surface of the workpiece W. Thus, it is useful for stabilization of the process.

(8) A substrate processing apparatus is provided with: the substrate cleaning member according to any one of the above (1) to (7); a substrate holding portion that holds a workpiece W; and a driving section that moves the first contact surface and the second contact surface along the main surface of the workpiece W held by the substrate holding section.

The substrate processing apparatus is provided with the substrate cleaning member, and is therefore useful for improving the efficiency of processing.

(9) A substrate cleaning method comprising the steps of: a polishing step of polishing the main surface of the substrate by the substrate cleaning member; and a cleaning step of cleaning the main surface by a substrate cleaning member after the polishing step, wherein the substrate cleaning member has: a first member having a first contact surface with an outer edge formed along a circumference around the central axis Ax; a second member (cleaning member 72) having a second contact surface (cleaning surface 72 a) with an outer edge formed along the circumference outside or inside the first contact surface; a lower member 76, 78 supporting the second member, the lower member 76, 78 being formed of a softer material than the second member; and a base 52 for supporting the first member, the second member, and the lower members 76, 78, wherein the second contact surface is formed so that at least one of the surface roughness and the hardness is different from the first contact surface, and the polishing step includes: the lower members 76 and 78 are configured to bring the first contact surface and the second contact surface into contact with the main surface by applying a force to the second member while the second member is supported so that the second contact surface protrudes from the first contact surface in the axial direction in which the central axis Ax extends; and moving the first contact surface and the second contact surface along the main surface in a state where the first contact surface and the second contact surface are brought into contact with the main surface, the cleaning step including: the second contact surface is moved along the main surface in a state where the first contact surface is not in contact with the main surface and the second contact surface is in contact with the main surface.

The substrate cleaning method is useful for improving the efficiency of the process in the same manner as the substrate cleaning member described in (1).

Description of the reference numerals

1: A substrate processing system; 2: a coating and developing device; 20: a grinding unit; 48: a rotary driving mechanism; 50. 50A, 50B: a grinding and cleaning mechanism; 52: a base station; 60. 60B: a polishing section; 62: a polishing member; 62a: a grinding surface; 64: a support member; 70. 70A: a cleaning part; 72: cleaning the component; 72a: cleaning face; 74: a middle layer member; 76. 78: a lower layer member; 92: a driving mechanism.

Claims (8)

1. A substrate cleaning member is characterized by comprising:

A first member having a first contact surface with an outer edge formed along a circumference around a prescribed axis, the first member being capable of cleaning or polishing a main surface of a substrate by moving along the main surface in a state where the first contact surface is in contact with the main surface;

A second member having a second contact surface with an outer edge formed along the circumference on an outer side or an inner side of the first contact surface, the second member being capable of cleaning the main surface by moving along the main surface in a state where the second contact surface is in contact with the main surface;

a lower member that supports the second member such that the second contact surface protrudes in an axial direction along which the axis extends from the first contact surface; and

A base for supporting the first member, the second member, and the lower member,

The second contact surface is formed so that at least one of surface roughness and hardness is different from that of the first contact surface,

The lower member is formed of a softer material than the second member such that a position of the second contact surface is close to a position of the first contact surface in the axial direction when the second member receives a contact force from the main surface.

2. The substrate cleaning member according to claim 1, wherein,

The second member and the lower member are each formed of a material containing air holes,

The pore size of the pores in the lower member is larger than the pore size of the pores in the second member.

3. The substrate cleaning member according to claim 1, wherein,

And a middle member disposed between the second member and the lower member, wherein the middle member is made of a harder material than the second member and the lower member,

The second member, the middle member, and the lower member are formed in a ring shape so as to extend along the circumference.

4. The substrate cleaning member according to claim 3, wherein,

In the axial direction, a lower end of the middle layer member is located above the first contact surface, or at least a part of the middle layer member is located at the same height as the first contact surface.

5. The substrate cleaning member according to claim 3 or 4, wherein,

The length of the lower member in the axial direction is greater than the length of the second member in the axial direction.

6. The substrate cleaning member according to claim 3 or 4, wherein,

The width of the lower member is substantially equal to the width of the second member in the radial direction of the circumference.

7. The substrate cleaning member according to claim 3 or 4, wherein,

At least a part of the lower member is formed so that a width in a radial direction of the circumference becomes larger as it goes away from the second contact surface, and is in contact with a supporting portion that supports the first member.

8. A substrate processing apparatus is characterized by comprising:

the substrate cleaning member according to any one of claims 1 to 3;

A substrate holding unit that holds the substrate; and

And a driving unit that moves the first contact surface and the second contact surface along the main surface of the substrate held by the substrate holding unit.