CN220957310U

CN220957310U - Foreline assembly and semiconductor processing apparatus

Info

Publication number: CN220957310U
Application number: CN202322182495.1U
Authority: CN
Inventors: 杨闰清; 马化韬; 许灿
Original assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Current assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Priority date: 2023-08-14
Filing date: 2023-08-14
Publication date: 2024-05-14
Anticipated expiration: 2033-08-14

Abstract

The utility model discloses a pre-pipeline assembly and a semiconductor processing device, and relates to the technical field of semiconductors. The foreline assembly for exhausting a process module of two chambers, the foreline assembly comprising: the two air inlets can be communicated with the air extraction openings of the chambers in a matching way; two paths of exhaust pipelines, wherein one ends of the two paths of exhaust pipelines are respectively provided with the air inlets, and the directions of the two paths of exhaust pipelines are consistent so as to ensure that the flowing directions of fluid in the two paths of exhaust pipelines are consistent; the three-way unit comprises two inflow ports and one outflow port; and one end of each of the two connecting pipelines is connected with the two exhaust pipelines, the other end of each of the two connecting pipelines is connected with the two inflow ports of the three-way unit, and the outflow ports of the three-way unit can be communicated to an exhaust device. The utility model improves the consistency of substrate processing by making the trend of the exhaust pipeline of the fore pipeline assembly which is matched and installed with each exhaust opening of the two chambers consistent.

Description

Foreline assembly and semiconductor processing apparatus

Technical Field

The utility model relates to the technical field of semiconductors, in particular to a pre-pipeline assembly and a semiconductor processing device.

Background

The semiconductor manufacturing process comprises tens of processes such as photoetching, etching, film deposition, cleaning, annealing, ion implantation and the like. Of these, photolithography, etching, and thin film deposition are the most central three processes. The deposited objects comprise various barrier layers, dielectric layers, various metal films and the like. Deposition processes typically involve chemical reactions of various reactant gases in a low pressure chamber, with the reaction products being deposited on a target substrate to form a uniform, dense film. Deposition quality will directly affect the performance and yield of semiconductor devices. In the deposition process, it is necessary to continuously introduce a reaction gas into the reaction chamber while pumping the reaction chamber by a pumping device to pump out reaction byproducts and the like from the reaction chamber and maintain the reaction chamber at a certain low pressure. The foreline component is used for exhausting the reaction chamber, one end of the foreline component is connected with an exhaust opening of the reaction chamber, and the other end of the foreline component is directly or indirectly connected to the exhaust device for exhausting. The design of the foreline assembly is important because the manner in which the gas is pumped affects the flow and distribution of the reactant gases within the reaction chamber.

In addition, in order to pursue higher production efficiency, the existing deposition apparatus and etching apparatus mostly employ a dual-chamber processing apparatus. The provision of dual chambers places higher demands on the arrangement of the foreline assembly, which not only takes into account the location of the connection with the reaction chambers, but also the arrangement of the foreline assembly, to achieve high quality process and uniformity of substrate processing in the different reaction chambers.

The background description provided herein is for the purpose of generally presenting the context of the disclosure. This description of the prior art, which is not to be taken as an admission that it is prior art at the time of filing the application, is neither expressly nor implying any admission as to the present disclosure.

Disclosure of utility model

The present utility model provides a foreline assembly and semiconductor processing apparatus that improves uniformity of substrate deposition in different reaction chambers by aligning the flow direction of fluids in the exhaust lines connected to the chamber exhaust ports.

To achieve the above object, the present utility model provides, in one aspect, a foreline assembly:

A foreline assembly for exhausting a process module having two chambers, the foreline assembly comprising:

The two air inlets can be communicated with the air extraction openings of the chambers in a matching way;

Two paths of exhaust pipelines, wherein one ends of the two paths of exhaust pipelines are respectively provided with the air inlets, and the directions of the two paths of exhaust pipelines are consistent so as to ensure that the flowing directions of fluid in the two paths of exhaust pipelines are consistent;

The three-way unit comprises two inflow ports and one outflow port;

And one end of each of the two connecting pipelines is connected with the two exhaust pipelines, the other end of each of the two connecting pipelines is connected with the two inflow ports of the three-way unit, and the outflow ports of the three-way unit can be communicated to an exhaust device.

Optionally, a pipe protrusion is configured at the connection part of the exhaust pipe and the connecting pipe.

Optionally, an opening is formed in a side wall of the exhaust pipe and connected with the connecting pipe, and the exhaust pipe continues to extend after passing through the opening and forms the pipe protruding portion.

Optionally, the end surface of the pipe protruding part is arc-shaped or plane-shaped.

Optionally, the cross-sectional shapes of the exhaust pipe and the connecting pipe are polygonal or annular.

Optionally, the connecting duct comprises a first connecting duct section and a second connecting duct section, and the connection between the first connecting duct section and the second connecting duct section is at an angle or is an arc bend.

Optionally, the angle is a right angle.

Optionally, the flow directions of the fluid in the first and second connecting pipe sections are perpendicular to each other.

Optionally, the flow directions of the fluid in the exhaust pipe and the connecting pipe are perpendicular to each other.

Optionally, the tee unit is T-shaped.

Optionally, the foreline assembly is configured bilaterally symmetrically.

Optionally, the pumping ports of each chamber are at equal azimuth angles relative to the susceptor for carrying wafers in the chamber

In another aspect, the present application further provides a semiconductor processing apparatus:

A semiconductor processing apparatus comprising two chambers disposed left and right, wherein an extraction port of each chamber is equal in azimuth angle with respect to a susceptor for carrying a wafer in the chamber, the extraction port being connected to an exhaust apparatus through a foreline, the foreline comprising:

And the two paths of exhaust pipelines are respectively provided with the air inlets at one ends of the two paths of exhaust pipelines, and the directions of the two paths of exhaust pipelines are consistent so that the flowing directions of the fluid in the two paths of exhaust pipelines are consistent.

Optionally, a support seat for bearing the substrate is arranged in the chamber, and the exhaust pipeline is parallel to the upper surface of the support seat.

Optionally, the upper surface of the supporting seat is centrosymmetric, and an extension line of the central line of the exhaust pipeline intersects with a central vertical line of the upper surface.

Optionally, the central line of the exhaust pipeline is perpendicular to the side surface of the chamber where the extraction opening is located.

Optionally, each of the pumping ports and the substrate transfer port of each of the chambers are respectively disposed on opposite sides of the chambers.

Optionally, each chamber further comprises an air extraction ring, and the air extraction openings are arranged on the air extraction rings.

Optionally, the foreline further comprises: the three-way unit comprises two inflow ports and one outflow port;

Optionally, the cross-sectional area of the exhaust duct is larger than the cross-sectional area of the connecting duct.

Optionally, the distance between the opening and the air extraction opening is 25-60mm.

The utility model has the beneficial effects that: the utility model improves the consistency of substrates processed in a processing module with two chambers by enabling the extraction openings of the chambers to be positioned on the same side of the chambers and enabling the directions of the exhaust pipelines of the foreline assembly which is matched with the extraction openings of the chambers to be consistent, namely, enabling the directions of fluid flowing out of the extraction openings and flowing through the exhaust pipelines to be consistent during extraction. In addition, the utility model further arranges the pipe protruding part at the connection part of the exhaust pipe and the connecting pipe of the pre-stage pipe assembly, and the pipe protruding part is used for manufacturing turbulent flow in the exhaust pipe so as to reduce the influence on the distribution of the reaction gas in the chamber when the air is pumped through the pumping hole at one side of the chamber and improve the distribution uniformity of the reaction gas on the surface of the substrate.

Drawings

FIG. 1 is a schematic diagram of a semiconductor processing cluster tool;

FIG. 2 is a schematic front view of a deposition processing apparatus of the background art;

FIG. 3 is a schematic top view of a deposition processing apparatus of the background art;

FIG. 4 is a schematic view of a deposition processing apparatus according to the background art after a deposition process is performed on a substrate;

FIG. 5 is a schematic front view of a deposition processing apparatus and a foreline assembly thereof according to one embodiment of the present utility model;

FIGS. 6-7 are schematic side views of a deposition processing apparatus and a foreline assembly thereof according to one embodiment of the present utility model;

FIG. 8 is a schematic top view of a deposition processing apparatus and a foreline assembly thereof according to one embodiment of the present utility model;

Detailed Description

The gas delivery device, the atomic layer deposition apparatus, and the method of using the same according to the present utility model are described in further detail below with reference to the accompanying drawings and detailed description. The advantages and features of the present utility model will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the utility model. For a better understanding of the utility model with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the utility model to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the utility model, are included in the spirit and scope of the utility model which is otherwise, without departing from the spirit or essential characteristics thereof.

It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

Deposition processing apparatus are used to process substrates such as semiconductor wafers in semiconductor processes, such as depositing dielectric layers of insulation, metal layers in metal interconnects, etc. in chip fabrication processes. During the deposition process, the substrate is placed on a support pedestal within a chamber of a deposition processing apparatus and process gases required for the deposition process are introduced into the chamber, which react at the substrate surface and produce a target film layer. In order to avoid the influence of side reactant generated by reaction on deposition and ensure the vacuum environment required by deposition, an air extraction opening is arranged on the chamber to extract air from the chamber. The foreline component is a key part for matching and communicating with the pumping hole and pumping air. It will be appreciated that not only deposition apparatus but also other semiconductor processing devices, such as semiconductor etch processing devices, have similar requirements, and that the utility model is applicable to these types of processing apparatus.

And as the applications of semiconductor devices in life are becoming wider and wider, the demands for semiconductor devices are also becoming larger and larger, so that the applications of the dual chamber deposition processing apparatus are increasing in order to improve the production efficiency.

To increase the level of automation, a plurality of semiconductor processing devices are typically integrated into a semiconductor processing system tool, each of which may be configured to perform one or more respective processes on a substrate. As shown in fig. 1, is a semiconductor processing system tool. The present utility model is described with respect to a semiconductor processing apparatus as a deposition processing apparatus, i.e., a semiconductor process performed in a reaction chamber is a deposition process. The semiconductor processing system tool includes a deposition processing apparatus 10 having a dual chamber, a Transfer Module (TM) 20, and a front end module (EFEM) 30. The deposition processing apparatus 10 has two processing chambers 11 arranged in parallel. The number of the deposition processing apparatuses 10 is 3, and the deposition processing apparatuses are disposed on three sides of the transfer module 20, and the front end module 30 is disposed on the other side of the transfer module 20. Substrates to be processed are loaded into the chambers of the deposition processing apparatus 10 by the transfer module 20 via ports of the loading station of the equipment front end module 30. In some embodiments, the deposition processing apparatus 10 is only one, and other types of processing apparatuses, such as an etching processing apparatus, may be disposed on the other two sides of the transfer module 20, and the substrate may be directly taken out of the transfer module 20 and transferred into the etching processing apparatus for etching processing after being processed by the deposition processing apparatus 10.

Fig. 2-3 are schematic views of a deposition processing apparatus 100 according to the background of the utility model. The two chambers 110 of the deposition processing apparatus 100 are arranged side by side, and to simplify the apparatus configuration, the two chambers 110 share one foreline assembly 130. For convenience of arrangement, the extraction openings of the two chambers 110 are disposed opposite to each other, and the foreline assembly 130 is disposed between the two chambers 110, the foreline assembly 130 is T-shaped, the extraction openings of the two chambers 110 are connected through a transverse pipeline, and the extraction openings are connected to the extraction device through a vertical pipeline at a middle position of the transverse pipeline, and the connection includes direct connection and indirect connection. During the deposition process, the substrate 120 is placed in the chamber 110, a reactive gas is introduced into the chamber and a thin film is deposited on the surface of the substrate 120, and during the deposition process, the chamber 110 is evacuated by the evacuation device through the foreline assembly 130, the reaction by-products are evacuated from the chamber 110, and the chamber 110 is maintained in a vacuum environment required for the deposition process.

Referring to fig. 4, a schematic view of a thin film on a substrate 120 after deposition processing in a side-by-side chamber 110 is shown. Because the pumping ports of the two chambers 110 of the same deposition processing apparatus are disposed opposite to each other, that is, the pumping of the two chambers 110 is symmetrical about a symmetry line between the two chambers 110, for one chamber, since the pumping ports are disposed at one side of the chamber, the distances between the gas flows at different positions in the chamber and the pumping ports are different, so that the pumping can affect the distribution of the reaction gas in the chamber 110, and therefore, the symmetrical pumping mode can result in the symmetrical distribution of the reaction gas in the chamber 110 without considering the influence of other factors on the distribution of the reaction gas. The film deposited on the substrate is affected by the distribution of the reactive gases, and it is difficult to achieve complete uniformity of film growth, and the result of this pumping is that the films deposited on the two substrates 120 are also symmetrical about the symmetry line, i.e., the films on the two substrates processed simultaneously are mirror images. In the semiconductor manufacturing process, there may be tens of or even hundreds of processing steps, and there are often steps such as plasma etching, continuous deposition, etc. after the deposition processing, where consistency between the substrate to be processed and other substrates is desired, and where the substrates can be adjusted in a targeted manner according to the surface morphology when they are continuously processed, so as to reduce adverse effects of non-uniformity of the deposited film on the subsequent steps or the final product. Of course, there are other benefits to uniformity from substrate to substrate, not specifically described herein, but it will be appreciated that ensuring uniformity from substrate to substrate is an important goal of substrate processing. The mirror symmetry of the thin film deposited on the substrate 120 of the background art breaks the uniformity between substrates, and therefore, improvements in the deposition processing apparatus are needed.

Referring now to FIGS. 5-8, a deposition processing apparatus 200 and a foreline assembly 230 are provided. Likewise, the deposition processing apparatus 200 is disposed at one side of the transfer module 20, and the deposition processing apparatus 200 is provided with a substrate transfer port at one side opposite to the transfer module 20. The deposition processing apparatus 200 also includes two chambers 210 disposed left and right, each chamber 210 is provided with an exhaust port, the exhaust ports 211 of different chambers 210 are disposed on the same side of the chamber 210, as in fig. 5, and may all be disposed on the left side of the chamber, alternatively, each exhaust port 211 is disposed on the opposite side of one side of the transfer module 20, that is, on the opposite side of the chamber 210 where the substrate transfer port is located, and each exhaust port 211 is connected to an exhaust device (not shown) through a foreline assembly 230. In some embodiments, the chamber 210 further comprises an exhaust ring disposed around the substrate, and the exhaust port 211 is disposed on the exhaust ring, optionally, the exhaust port 211 is disposed on an outer sidewall of the chamber. Meanwhile, the inner side wall of the air pumping ring is uniformly provided with air pumping holes so as to improve air pumping uniformity.

In addition, the foreline assembly 230 includes two gas inlets 231 and two exhaust lines 232 corresponding to the gas inlets 231, the two gas inlets 231 are configured by the two exhaust lines 232, and the directions of the two exhaust lines 232 are identical, each gas inlet 231 is connected to the extraction opening 211 of each chamber 210, and the flow directions of the reaction gas in the two exhaust lines 232 are also identical when the chamber 210 is extracted. By making the azimuth angles of the pumping ports of each chamber equal relative to the susceptor for carrying wafers in the chamber and making the directions of the exhaust pipelines 232 connected with the pumping ports 211 consistent, the pumping consistency of the two chambers 210 is ensured, thereby ensuring the consistency of the distribution of the reaction gases in the chambers 210, avoiding the mirror symmetry of the thin film for deposition treatment caused by symmetrical arrangement, and improving the consistency between substrates. To reduce the effect of pumping on the uniformity of the reactant gases within the chamber, pumping uniformity is further enhanced, optionally, the foreline assembly 230 is arranged side-to-side symmetrically.

In addition, the foreline assembly 230 further includes a three-way unit 234 and two connection lines 233 respectively connected to the exhaust line 232, the three-way unit 234 including two inflow ports 2341 and one outflow port 2342; one end of the two-way connecting pipe 233 is connected to the two-way exhaust pipe, and the other end is connected to two inflow ports 2341 of the three-way unit 234, respectively, and the outflow port 2342 of the three-way unit 234 is used for communicating with an exhaust device. Through gathering two way exhaust duct 232 into one way through tee bend unit 234, then follow-up exhaust apparatus is taken out, can avoid using a plurality of air extraction device or a plurality of exhaust duct to be connected to air extraction device, reduce deposition processing device's volume to the arrangement of preceding pipeline subassembly 230 of being convenient for also provides more spaces for subsequent deposition processing device's maintenance. Optionally, the three-way unit 234 has a T-shape, and the fluids in the two-way connecting pipes 233 can be relatively flowed and blocked during the pumping process by the T-shape design, so as to equalize the pumping rate of the two-way connecting pipes 233.

In order to reduce the influence of the pumping at one side of the chamber 210 on the distribution of the reaction gas in the chamber 210, a pipe protrusion 235 is disposed at the junction of the exhaust pipe 232 and the connection pipe 233, and the pipe protrusion includes a space communicating with the inside of the foreline assembly 230, so that the fluid generated during pumping can collide when flowing through the junction of the exhaust pipe 232 and the connection pipe 233, and the collision can affect the pumping air flow at the pumping port 211, reduce the flow rate of the central region of the pumping port 211, and further improve the uniformity of pumping at each region in the chamber 210 when pumping through the pumping port 211. Optionally, the side wall of the exhaust pipe 232 is provided with an opening 2321, and the side wall refers to the side wall of the pipe circumferential direction, not particularly refers to the side walls of the two vertical sides, the connecting pipe 233 is connected with the exhaust pipe 232 through the opening 2321, and the exhaust pipe 232 continues to extend for a distance according to the trend of the exhaust pipe 232 passing through the opening 2321 to form the pipe protruding portion 235. Optionally, the opening 2321 is located at a distance of 35-70mm, optionally 50mm, from the extraction opening. The natural formation of the duct protrusion 235 through the exhaust duct 232 may reduce the assembly process. Optionally, the exhaust conduit 232 continues to extend through the opening 2321 a distance of 5-15mm, optionally 7mm. The shape of the end surface of the conduit protrusion 235 may be designed to direct the flow of air to form turbulence depending on the arrangement of the pre-stage conduit assembly 230 and the chamber 210, and optionally the end surface may be arcuate or planar in shape. In other embodiments, the duct protruding portion 235 may be a concave component in the direction of the exhaust duct 232 of the front stage duct assembly 230, so long as the airflow is collided and turbulent, and the utility model is not limited thereto.

The turbulence is produced not only in relation to the end surface shape of the duct protrusion 235 but also in relation to the cross-sectional shapes of the exhaust duct 232 and the connection duct 233, alternatively, the cross-sectional shape thereof may be polygonal or annular, alternatively, the cross-sectional shape of the exhaust duct 232 may be polygonal, and the cross-sectional shape of the connection duct 233 may be annular, and by adjusting the polygonal shape of the cross-section of the exhaust duct 232, the flow rate in the central region and the flow rate in the edge region of the cross-section of the exhaust duct 232 may be adjusted, and thus the uniformity of the suction of the chamber 210 may be improved, for example, the area of the middle part of the polygonal cross-sectional shape may be made smaller than the area of both sides, and thus the flow rate in the middle region of the duct may be reduced. Optionally, the cross-sectional area of the exhaust pipe 232 is larger than the cross-sectional area of the connecting pipe 233, so that the area of the connection part when the air flows from the exhaust pipe 232 to the connecting pipe 233 can be reduced, thereby reducing the influence of the air suction of the connecting pipe 233 on the turbulence in the exhaust pipe 232 and ensuring the action effect of the turbulence in the exhaust pipe 232.

The connecting conduit 233 further includes a first connecting conduit segment 2331 and a second connecting conduit segment 2332, and the connection between the first connecting conduit segment 2331 and the second connecting conduit segment 2332 is angled or curved. Optionally, the connection is an arc bend, and when the connection is an arc bend, fluid impinging on the pipe boss 235 may be rectified as it passes through the arc bend to reduce the impact strength and to minimize the pipe vibration that may be caused by airflow collisions. When the connection therebetween is at an angle, optionally at a right angle, the flow rate of the fluid through will be retarded, and by reducing the flow rate thereat, the effect of turbulence created by the conduit protrusions 235 on the suction at the suction opening 211 can be further increased. In a specific implementation, the shape of the connection between the first connection pipe section 2331 and the second connection pipe section 2332 may be designed according to actual needs, but alternatively, the flow direction of the fluid in the first connection pipe section 2331 and the second connection pipe section 2332 should be ensured to be vertical, alternatively, the first connection pipe section 2331 is arranged in a vertical direction, and the second connection pipe section 2332 is arranged in a horizontal direction.

Further, optionally, to increase the pumping effect of turbulence at the pumping port 211, the chamber 210 is pumped through the foreline assembly 230 more uniformly with the flow direction of the fluid in the exhaust line 232 and the connecting line 233 being perpendicular to each other.

It will be readily appreciated that the quality of the film deposition on the substrate 220 is also related to the position of the substrate 220 relative to the pumping port 211 and the backing tube assembly 230. During processing, the substrate 220 is supported by a support pedestal (not shown) within the chamber, and the exhaust conduit 232 is parallel to the upper surface of the support pedestal in order to reduce the effect of the exhaust gas on the reactive gas distribution on the upper surface of the substrate. Further, optionally, the upper surface of the support base is centrosymmetric, and the extension line of the central line of the exhaust duct passes through the center O of the upper surface of the support base (ideally, the center O coincides with the center of the substrate) so as to promote the uniformity of the air extraction.

Therefore, the exhaust ports of the chambers are arranged on the same side of the chambers, and the directions of the exhaust pipelines of the front pipeline assemblies which are matched with the exhaust ports are consistent, so that the consistency between substrates is improved when the film is deposited by the deposition processing equipment with the double chambers, and convenience is provided for the processing of subsequent procedures. In addition, the utility model also arranges the pipeline protruding part at the joint of the exhaust pipeline and the connecting pipeline of the front pipeline assembly so as to generate airflow collision when fluid flows through, and controls the airflow velocity in a mode of artificially manufacturing turbulence so as to increase the uniformity when the air is extracted through the extraction opening.

While the present utility model has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the utility model. Many modifications and substitutions of the present utility model will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the utility model should be limited only by the attached claims.

Claims

1. A foreline assembly for exhausting a process module having two chambers, characterized by: the foreline assembly includes:

The three-way unit comprises two inflow ports and one outflow port;

2. The foreline assembly of claim 1 wherein the junction of the exhaust line and the connecting line is provided with a line protrusion.

3. The foreline assembly of claim 2 wherein the side wall of the exhaust line is provided with an opening for connection to the connecting line, the exhaust line continuing to extend through the opening and forming the line projection.

4. The foreline assembly of claim 3 wherein the end face of the line projection is arcuate or planar.

5. The foreline assembly of claim 1 wherein the cross-sectional shape of the exhaust and connecting lines is polygonal or annular.

6. The foreline assembly of claim 1, wherein the connecting line comprises a first connecting line segment and a second connecting line segment, and the connection between the first connecting line segment and the second connecting line segment is at an angle or is curved.

7. The foreline assembly of claim 6 wherein the angle is a right angle.

8. The foreline assembly of claim 6 wherein the flow directions of the fluid in the first and second connecting line segments are perpendicular to each other.

9. The foreline assembly of any one of claims 1-8 wherein the direction of flow of the fluid in the exhaust conduit and the connecting conduit is perpendicular to each other.

10. The foreline assembly of claim 9 wherein the tee unit is T-shaped.

11. The foreline assembly of claim 10 wherein the foreline assembly is configured bilaterally symmetrically.

12. The foreline assembly of claim 1, wherein the pumping ports of each chamber are azimuthally equal with respect to a susceptor in the chamber for carrying wafers.

13. The utility model provides a semiconductor processing apparatus, includes two cavities that set up about, its characterized in that, each the extraction opening of cavity is the same for the azimuth angle of the base that is used for carrying the wafer in the cavity, the extraction opening communicates to exhaust apparatus through a foreline subassembly, foreline subassembly includes:

And the two paths of exhaust pipelines are respectively provided with the air inlets at one ends of the two paths of exhaust pipelines, and the directions of the two paths of exhaust pipelines are consistent so that the flowing directions of the gases in the two paths of exhaust pipelines are consistent.

14. A semiconductor processing apparatus according to claim 13, wherein a support pedestal for supporting a substrate is disposed within the chamber, and the exhaust conduit is parallel to an upper surface of the support pedestal.

15. A semiconductor processing apparatus as recited in claim 14, wherein the upper surface of the support base is centrally symmetrical, and wherein the extension of the center line of the exhaust conduit intersects the center vertical line of the upper surface.

16. A semiconductor processing apparatus as recited in claim 14, wherein a centerline of the exhaust conduit is perpendicular to a side of the chamber where the pumping port is located.

17. The semiconductor processing apparatus of claim 13, wherein each of the pumping ports and the substrate transfer port of each of the chambers are disposed on opposite sides of the chamber.

18. The semiconductor processing apparatus of claim 13, wherein each chamber further comprises an extraction ring, wherein the extraction openings are disposed in the extraction rings.

19. A semiconductor processing apparatus according to any one of claims 13 to 18, wherein the foreline further comprises: the three-way unit comprises two inflow ports and one outflow port;

20. The semiconductor processing apparatus of claim 19, wherein a conduit protrusion is provided at a junction of the exhaust conduit and the connecting conduit.

21. The semiconductor processing apparatus of claim 20, wherein a sidewall of the exhaust conduit is provided with an opening to which the connection conduit is connected, the exhaust conduit continuing to extend through the opening and forming the conduit protrusion.

22. The semiconductor processing apparatus of claim 21, wherein the cross-sectional area of the exhaust conduit is greater than the cross-sectional area of the connecting conduit.

23. The semiconductor processing apparatus of claim 22, wherein the opening is spaced from the pumping port by a distance of 25-60mm.