CN220856882U

CN220856882U - Mixed dielectric waveguide

Info

Publication number: CN220856882U
Application number: CN202322495484.9U
Authority: CN
Inventors: 王怀念; 熊东; 李晓龙; 周帅帅; 李兴坤
Original assignee: Jiangsu Datong Electronic Technology Co ltd
Current assignee: Jiangsu Datong Electronic Technology Co ltd
Priority date: 2023-09-14
Filing date: 2023-09-14
Publication date: 2024-04-26
Anticipated expiration: 2033-09-14

Abstract

The utility model relates to a mixed dielectric waveguide, which comprises a hollow circular waveguide, a rectangular waveguide and a dielectric waveguide connector, wherein the dielectric waveguide connector is respectively connected with the hollow circular waveguide and the rectangular waveguide, the hollow circular waveguide is connected with the front end of the dielectric waveguide connector, and the rectangular waveguide is connected with the rear end of the dielectric waveguide connector. The utility model aims to overcome the defects of the prior art and provide the mixed dielectric waveguide which can realize that broadband data transmission can be transmitted in a longer range.

Description

Mixed dielectric waveguide

Technical Field

The present utility model relates to a mixed-medium waveguide.

Background

A waveguide is a structure for directing electromagnetic waves. In electromagnetic and communication engineering, the term waveguide may refer to any linear structure that transmits electromagnetic waves between its ends, initially and most commonly meaning hollow metal tubes that are used to transmit radio waves.

As data centers expand, the demand for high-speed interconnects continues to increase to meet market demands for bandwidth, cost, and power, and research into terahertz waveguides is experiencing tremendous growth, as they are of great significance to compact and robust terahertz systems. The traditional waveguide link has small capacity, low transmission speed and low power, and seriously affects the development of industry, so the mixed dielectric waveguide is proposed for the problems.

Disclosure of utility model

The utility model aims to overcome the defects of the prior art and provide the mixed dielectric waveguide which can realize that broadband data transmission can be transmitted in a longer range.

The technical scheme for achieving the purpose is as follows: the mixed dielectric waveguide comprises a hollow circular waveguide, a rectangular waveguide and a dielectric waveguide connector, wherein the dielectric waveguide connector is respectively connected with the hollow circular waveguide and the rectangular waveguide, the hollow circular waveguide is connected with the front end of the dielectric waveguide connector, and the rectangular waveguide is connected with the rear end of the dielectric waveguide connector.

Preferably, the hollow circular waveguide comprises a first PTFE (polytetrafluoroethylene), wherein a first carbon-filled semiconductor layer is connected to an outer side wrapping of the first PTFE, an aluminum foil polyimide tape is connected to an outer side wrapping of the first carbon-filled semiconductor layer, a first metal braided shielding layer is connected to an outer side wrapping of the aluminum foil polyimide tape, a second carbon-filled semiconductor layer is connected to an outer side wrapping of the first metal braided shielding layer, and a first FEP (soft plastic) sheath is connected to an outer side wrapping of the second carbon-filled semiconductor layer.

Preferably, the rectangular waveguide comprises a second PTFE, a third PTFE is wrapped and connected on the outer side of the second PTFE, a third carbon-filled semiconductor layer is wrapped and connected on the outer side of the third PTFE, an aluminum foil thin polyimide belt is wrapped and connected on the outer side of the third carbon-filled semiconductor layer, a second metal woven shielding layer is wrapped and connected on the outer side of the aluminum foil thin polyimide belt, a fourth carbon-filled semiconductor layer is wrapped and connected on the outer side of the second metal woven shielding layer, and a second FEP sheath is wrapped and connected on the outer side of the fourth carbon-filled semiconductor layer.

Preferably, the dielectric waveguide connector comprises a first waveguide connection end and a second waveguide connection end, wherein the first waveguide connection end is connected with the rectangular waveguide, and the second waveguide connection end is connected with the hollow circular waveguide.

Preferably, the first PTFE is hollow circular.

Preferably, the second PTFE is a solid rectangle.

The beneficial effects of the utility model are as follows: by arranging the hollow circular waveguide, the rectangular waveguide and the dielectric waveguide connector, the hollow circular waveguide is connected to the front end of the dielectric waveguide connector, and the rectangular waveguide is connected to the rear end of the dielectric waveguide connector to form a mixed dielectric waveguide. The hybrid dielectric waveguide achieves unprecedented throughput, product distance, bend radius, and channel density without requiring complex fabrication processes. The hybrid dielectric waveguide link exhibits a bandwidth of approximately 50GHz at a carrier frequency of 95GHz (gigahertz) and exhibits a frequency-independent insertion loss of 11dB/m and a frequency-independent group delay of 7ns/m (nanoseconds/meter). This frequency independent loss and delay characteristic enables broadband data transmission to be transmitted over a longer range than conventional waveguide links. Hybrid dielectric waveguide links use 110GHz, RF CMOS (radio frequency complementary metal oxide semiconductor) transceivers I C (electronics) to transmit 50Gbps (switched broadband) data over a distance of 3 meters, which is currently the most advanced data throughput in the industry. This new interconnect is expected to overcome the limitations of existing electrical and optical interconnects and replace them in the next few years. High transmission waveguides at short distances will be the main direction of application.

Drawings

FIG. 1 is a schematic view of a hollow round waveguide of the present utility model;

FIG. 2 is a cross-sectional view of a hollow circular waveguide of the present utility model;

FIG. 3 is a schematic view of a rectangular waveguide of the present utility model;

FIG. 4 is a cross-sectional view of a rectangular waveguide of the present utility model;

fig. 5 is a schematic diagram of a dielectric waveguide connector of the present utility model.

In the figure: 1. a first PTFE; 2. a first carbon-filled semiconductor layer; 3. an aluminum foil polyimide tape; 4. a first metal braid shield; 5. a second carbon-filled semiconductor layer; 6. a first FEP jacket; 7. a second PTFE; 8. a third PTFE; 9. a third carbon-filled semiconductor layer; 10. aluminum foil thin polyimide tape; 11. a second metal braid shield; 12. a fourth carbon-filled semiconductor layer; 13. a second FEP jacket; 14. a first waveguide connection end; 15. a second waveguide connection end; 16. a hollow circular waveguide; 17. a rectangular waveguide; 18. dielectric waveguide connectors.

Detailed Description

The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings. In the description of the present utility model, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying positive importance.

The utility model will be further described with reference to the accompanying drawings.

As shown in fig. 1 to 5, the hybrid dielectric waveguide includes a hollow circular waveguide 16, a rectangular waveguide 17 and a dielectric waveguide connector 18, the dielectric waveguide connector 18 is respectively connected to the hollow circular waveguide 16 and the rectangular waveguide 17, the hollow circular waveguide 16 is connected to the front end of the dielectric waveguide connector 18, and the rectangular waveguide 17 is connected to the rear end of the dielectric waveguide connector 18.

As shown in fig. 1 and 2, the hollow circular waveguide 16 includes a first PTFE1, and the first PTFE1 is hollow circular. The microwave signal is distributed mainly in the air medium while a small amount of energy enters the first PTFE1 medium. Both air and the first PTFE1 are very good microwave media, and the propagation loss remains very low since the main part of the field propagates inside the hollow core.

The first PTFE1 is wrapped around and connected to a first carbon-filled semiconductor layer 2, and the first carbon-filled semiconductor layer 2 is a mode suppressing layer and is a tape of carbon-filled PTFE, and this semiconductor layer mainly suppresses the higher-order modes by an electromagnetic loss material.

The aluminum foil polyimide belt 3 is wrapped and connected on the outer side of the first carbon filled semiconductor layer 2, the aluminum foil polyimide belt 3 is a shielding layer, and the aluminum foil polyimide belt is adopted, so that the stability of a transmission structure is mainly guaranteed.

The aluminum foil polyimide tape 3 is wrapped and connected with the first metal braiding shielding layer 4, and the first metal braiding shielding layer 4 not only enhances electromagnetic shielding, but also enhances the strength of the cable.

The second carbon-filled semiconductor layer 5 is wrapped and connected on the outer side of the first metal braided shielding layer 4, the second carbon-filled semiconductor layer 5 mainly shields external electromagnetic waves, transmission interference is avoided, the shielding efficiency of the cable is enabled to be larger than 120dB, and the transmission rate is effectively improved.

The second carbon-filled semiconductor layer 5 is wrapped around and connected to the first FEP jacket 6. The outer first FEP jacket 6, makes the cable qualitative and wear resistant. The hollow circular waveguide 16 may also be manufactured based on conventional coaxial cable processes.

As shown in fig. 3 and 4, the rectangular waveguide 17 includes a second PTFE7, and the second PTFE7 is a solid rectangle.

The outside of the second PTFE7 is wrapped and connected with a third PTFE8,

The third PTFE8 is wrapped around and connected to a third carbon-filled semiconductor layer 9, and the third carbon-filled semiconductor layer 9 is a mode suppressing layer, which is a tape of carbon-filled PTFE, and which mainly suppresses the higher-order modes by an electromagnetic loss material. The second PTFE7 is extruded unsintered PTFE and the core may contain a filler. The third PTFE8 adopts microporous PTFE, has lower dielectric constant than the second PTFE7, thereby forming a reflecting layer of electromagnetic wave, effectively concentrating electromagnetic energy in the second PTFE7 and reducing loss.

The third carbon filled semiconductor layer 9 is wrapped and connected with an aluminum foil thin polyimide belt 10, the aluminum foil thin polyimide belt 10 is a shielding layer, and the aluminum foil polyimide belt is adopted, so that the stability of a transmission structure is mainly ensured.

The aluminum foil thin polyimide tape 10 is wrapped and connected with the second metal braiding shielding layer 11, and the second metal braiding shielding layer 11 not only enhances electromagnetic shielding, but also enhances the strength of the cable.

The outer side of the second metal braiding shielding layer 11 is wrapped and connected with the fourth carbon filling semiconductor layer 12, the fourth carbon filling semiconductor layer 12 mainly shields external electromagnetic waves, transmission interference is avoided, the shielding efficiency of the cable is enabled to be larger than 120dB, and the transmission rate is effectively improved.

The fourth carbon-filled semiconductor layer 12 is wrapped around and connected to the second FEP jacket 13. The second FEP jacket 13 makes the cable qualitative and wear resistant. In this way we attenuate the field in the cladding and thus prevent disturbing the core field. Extremely wide bandwidths and low dispersion can be achieved by very simple designs.

As shown in fig. 5, the dielectric waveguide connector 18 includes a first waveguide connection end 14 and a second waveguide connection end 15, the first waveguide connection end 14 being connected to the rectangular waveguide 17, and the second waveguide connection end 15 being connected to the hollow circular waveguide 16.

The hybrid dielectric waveguide is a cost and power efficient all-electric-domain broadband waveguide solution for high-speed high-capacity short-distance communication links. The hybrid dielectric waveguide achieves unprecedented throughput, product distance, bend radius, and channel density without requiring complex fabrication processes. The hybrid dielectric waveguide link exhibits a bandwidth of approximately 50GHz at a carrier frequency of 95GHz and exhibits a frequency-independent insertion loss of 11dB/m with a frequency-independent group delay of 7ns/m. This frequency independent loss and delay characteristic enables broadband data transmission to be transmitted over a longer range than conventional waveguide links. The hybrid dielectric waveguide link uses a 110GHz RF CMOS transceiver I C to transmit 50Gbps data over a distance of 3 meters, which is currently the most advanced data throughput in the industry. This new interconnect is expected to overcome the limitations of existing electrical and optical interconnects and replace them in the next few years. High transmission waveguides at short distances will be the main direction of application.

The above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the utility model.

Claims

1. The mixed dielectric waveguide is characterized by comprising a hollow circular waveguide (16), a rectangular waveguide (17) and a dielectric waveguide connector (18), wherein the dielectric waveguide connector (18) is respectively connected with the hollow circular waveguide (16) and the rectangular waveguide (17), the hollow circular waveguide (16) is connected with the front end of the dielectric waveguide connector (18), and the rectangular waveguide (17) is connected with the rear end of the dielectric waveguide connector (18).

2. The mixed dielectric waveguide according to claim 1, wherein the hollow circular waveguide (16) comprises a first PTFE (1), a first carbon-filled semiconductor layer (2) is connected to an outer package of the first PTFE (1), an aluminum foil polyimide tape (3) is connected to an outer package of the first carbon-filled semiconductor layer (2), a first metal braided shield layer (4) is connected to an outer package of the aluminum foil polyimide tape (3), a second carbon-filled semiconductor layer (5) is connected to an outer package of the first metal braided shield layer (4), and a first FEP jacket (6) is connected to an outer package of the second carbon-filled semiconductor layer (5).

3. The mixed dielectric waveguide according to claim 1, wherein the rectangular waveguide (17) comprises a second PTFE (7), a third PTFE (8) is connected to the second PTFE (7) by an outer wrap, a third carbon-filled semiconductor layer (9) is connected to the third PTFE (8) by an outer wrap, an aluminum foil thin polyimide tape (10) is connected to the third carbon-filled semiconductor layer (9) by an outer wrap, a second metal braided shield layer (11) is connected to the aluminum foil thin polyimide tape (10) by an outer wrap, a fourth carbon-filled semiconductor layer (12) is connected to the second metal braided shield layer (11) by an outer wrap, and a second FEP jacket (13) is connected to the fourth carbon-filled semiconductor layer (12) by an outer wrap.

4. The hybrid dielectric waveguide according to claim 1, characterized in that the dielectric waveguide connector (18) comprises a first waveguide connection end (14) and a second waveguide connection end (15), the first waveguide connection end (14) being connected to the rectangular waveguide (17) and the second waveguide connection end (15) being connected to the hollow circular waveguide (16).

5. The mixed dielectric waveguide according to claim 2, characterized in that the first PTFE (1) is hollow circular.

6. A mixed dielectric waveguide according to claim 3, characterized in that the second PTFE (7) is solid rectangular.