CN220830184U - Semiconductor laser driving circuit, semiconductor laser, and laser radar - Google Patents
Semiconductor laser driving circuit, semiconductor laser, and laser radar Download PDFInfo
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- CN220830184U CN220830184U CN202322462262.7U CN202322462262U CN220830184U CN 220830184 U CN220830184 U CN 220830184U CN 202322462262 U CN202322462262 U CN 202322462262U CN 220830184 U CN220830184 U CN 220830184U
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Abstract
The utility model provides a driving circuit of a semiconductor laser, the semiconductor laser and a laser radar, wherein the driving circuit realizes voltage gain by using a Boost circuit structure, high-voltage input is not required to be additionally provided, the Boost module and a grid driving module can share the same voltage rail for power supply, and other voltage rails are not required to be provided to realize the expected function of the circuit; the grid driving module is designed to improve the driving capability of the switch element, reduce the system delay and improve the measurement precision; the grid driving module can carry out logic operation on two paths of input driving signals, so that narrower pulse width is obtained, and the requirement on the pulse width of a front-end signal is reduced.
Description
Technical Field
The utility model relates to the technical field of semiconductor lasers, in particular to a driving circuit of a semiconductor laser, the semiconductor laser and a laser radar.
Background
Lidar systems use time of flight to measure the distance of a laser emission point from an object. In a lidar system, a laser pulse is sent to an object, a portion of the laser pulse power is reflected or scattered back, received by a photosensitive device, and distance measurement is achieved. The requirements of the laser driving circuit are a combination of the amplitude, pulse width and repetition rate of the current pulses.
The lasers commonly used in the prior art have, in particular, the following disadvantages:
First, a large amount of energy is typically required to transmit and receive laser pulses, which is a problem in some energy limited application scenarios. In addition, some systems require different voltage rails to drive the circuitry, while also requiring relatively high voltages to power the laser to output high power, which also places demands on the energy source.
Second, the beam of a conventional lidar system may diverge and be unstable due to mode control, thermal effects, etc., or the quality of the emitted beam may be poor due to structural deformation of the laser caused by excessive heat.
Third, many factors such as insufficient thermal management, overshoot of drive current, unreasonable circuit design, etc. may cause degradation of the structure of the laser after a period of time, and the laser may accelerate its degradation process when used in a high humidity or high temperature environment, which may result in an affected service life.
Disclosure of utility model
In order to solve the above problems, an embodiment of the present utility model provides a driving circuit of a semiconductor laser, including a Boost module, a gate driving module, and a laser emitting module; the high-voltage output end of the Boost module is connected with the laser emission module; the grid driving module comprises a grid driving circuit, the input end of the grid driving circuit is respectively connected with two different pulse signal output ends of the control unit through two routes, the output end of the grid driving circuit is connected with the grid of the switching element of the laser emitting module, and the grid driving circuit carries out logic operation on the two input pulse signals and then outputs the two pulse signals; the laser emission module comprises a switch element and a semiconductor light-emitting element, wherein the semiconductor light-emitting element is connected with the switch element and is connected between a high-voltage output end of the Boost module and the ground; the Boost module shares the same voltage rail power supply as the gate drive module.
Optionally, the laser emitting module comprises a vertical cavity surface emitting laser or an edge emitting laser.
Optionally, the gate driving circuit performs an and operation on the two input pulse signals and outputs the two pulse signals.
Optionally, the pulse width of the pulse signal output by the gate driving circuit is smaller than the pulse width of the two input pulse signals.
Optionally, the Boost module comprises a Boost chip, an energy storage inductor, a divider resistor and an energy storage capacitor; the power input pin of the Boost chip is connected with a power supply voltage, the power input pin and the enabling pin are respectively connected to two ends of the energy storage inductor, and the output voltage feedback pin is connected between the two voltage dividing resistors; the two voltage dividing resistors are connected in series and then connected with the energy storage capacitor in parallel, and one end of the energy storage capacitor is connected with the energy storage inductor, and the other end of the energy storage capacitor is grounded.
Optionally, the Boost module includes a Boost circuit; the Boost circuit comprises a switching element, and the grid electrode of the switching element is connected with the control logic signal output end of the control unit.
Optionally, the semiconductor light emitting element is a laser diode.
Optionally, the laser emission module further comprises a protection diode; the protection diode is reversely connected with the anode and the cathode of the laser diode.
The embodiment of the utility model provides a semiconductor laser, which comprises a driving circuit of the semiconductor laser.
The embodiment of the utility model provides a laser radar which comprises the semiconductor laser.
According to the driving circuit of the semiconductor laser, disclosed by the embodiment of the utility model, the voltage gain is realized by using the Boost circuit structure, no additional high-voltage input is required, the Boost module and the gate driving module can share the same voltage rail for power supply, and no other voltage rail is required to be provided for realizing the expected function of the circuit; the grid driving module is designed to improve the driving capability of the switch element, reduce the system delay and improve the measurement precision; the grid driving module can carry out logic operation on two paths of input driving signals, so that narrower pulse width is obtained, and the requirement on the pulse width of a front-end signal is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present utility model, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a driving circuit of a narrow pulse semiconductor laser according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of a Boost module in an embodiment of the present utility model;
FIG. 3 is a schematic diagram of another Boost module according to an embodiment of the present utility model;
fig. 4 is a schematic diagram of logic operation waveforms of the gate driving module according to an embodiment of the utility model.
Detailed Description
In order that the above objects, features and advantages of the utility model will be readily understood, a more particular description of the utility model will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
The embodiment of the utility model designs a narrow-pulse semiconductor laser driving circuit, which can realize megahertz and nanosecond high-frequency narrow-pulse emission under a small volume and improve the detection precision, detection distance and reliability of the laser radar.
The driving circuit of the narrow-pulse semiconductor laser comprises a Boost module, a grid driving module and a laser emitting module.
The high-voltage output end of the Boost module is connected with the laser emission module and is used for providing boosted voltage for the laser emission module. The Boost module is used for realizing voltage gain without providing high-voltage input additionally.
The grid driving module comprises a grid driving circuit, the input end of the grid driving circuit is respectively connected with two different pulse signal output ends of the control unit through two paths, the output end of the grid driving circuit is connected with the grid of the switching element of the laser emitting module, and the grid driving circuit carries out logic operation on the two input pulse signals and then outputs the two pulse signals. The grid driving circuit carries out logic processing on two input control pulses, so that the output pulse width is narrower and controllable.
The gate driving circuit performs an and operation on the input two pulse signals and outputs the result. Based on the AND operation, when both pulse signals are at high level, the output pulse is at high level, so as to control the output pulse width. After logic operation, the pulse width of the pulse signals output by the grid driving circuit is smaller than the pulse width of the two input pulse signals.
The laser emission module comprises a switching element and a semiconductor light-emitting element, wherein the semiconductor light-emitting element is connected with the switching element and is connected between a high-voltage output end of the Boost module and the ground. The switching element is controlled by the grid driving circuit to control the on and off of the semiconductor light-emitting element, so as to realize pulse laser emission.
The Boost module shares the same voltage rail supply as the gate drive module. In the embodiment, the Boost module and the grid driving module share the same voltage rail for power supply, and the circuit function can be realized without more voltage rails, so that the structure is simpler.
According to the driving circuit of the semiconductor laser, provided by the embodiment of the utility model, the Boost circuit structure is used for realizing voltage gain, no additional high-voltage input is needed, the Boost module and the gate driving module can share the same voltage rail for power supply, and no other voltage rail is needed to be provided for realizing the expected function of the circuit; the grid driving module is designed to improve the driving capability of the switch element, reduce the system delay and improve the measurement precision; the grid driving module can carry out logic operation on two paths of input driving signals, so that narrower pulse width is obtained, and the requirement on the pulse width of a front-end signal is reduced.
Fig. 1 shows a schematic diagram of a narrow pulse semiconductor laser driving circuit according to an embodiment of the present utility model. As shown in fig. 1, the narrow pulse semiconductor laser driving circuit mainly includes the following components:
① Boost module: the module is used for raising the voltage of 5V to 24V and providing a relatively high voltage for the semiconductor laser.
② And a gate driving module: the module is used for receiving a pulse control signal output by the micro control unit (Microcontroller Unit; MCU), driving the on-off of the switching element and performing logic operation to control the output pulse width. In fig. 1, the switching element is illustrated by taking a MOS transistor as an example.
③ And the laser emission module is used for: the module is used for laser emission, controls the on and off of the semiconductor laser through the switching element, and generates instantaneous high power during the on period. In fig. 1, the semiconductor light emitting device is illustrated as a laser diode, and a protection diode is connected to the semiconductor laser diode in a reverse manner to protect the laser diode from damage caused by current kickback.
The Boost module can comprise a Boost chip, an energy storage inductor, a voltage dividing resistor and an energy storage capacitor; the power input pin and the enabling pin of the Boost chip are respectively connected to two ends of the energy storage inductor, and the output voltage feedback pin is connected between the two divider resistors; the two voltage dividing resistors are connected in series and then connected with the energy storage capacitor in parallel, one end of the energy storage capacitor is connected with the energy storage inductor, and the other end of the energy storage capacitor is grounded.
Fig. 2 shows a schematic structural diagram of a Boost module provided by an embodiment of the present utility model. As shown in FIG. 2, the Boost chip is powered by 5V voltage, L is an energy storage inductor, D is a diode for preventing reverse flow in the Boost module circuit, C is an energy storage unit of the Boost module, and resistors R1 and R2 form a negative feedback structure, and the final output voltage value can be adjusted by adjusting the ratio of R1 to R2. The power input pin VIN of the Boost chip is connected to a voltage of 5V, the enable pin EN is connected between the energy storage inductor L and the diode D, and the output voltage feedback pin FB is connected between the resistors R1 and R2.
Fig. 3 shows a schematic structural diagram of another Boost module according to an embodiment of the present utility model. As shown in fig. 3, the Boost module may employ a conventional Boost circuit, and an additional input of a MOS switch gate control logic signal is required, which is matched with the pulse control signal of the gate driving module.
In this embodiment, the Boost module is used to achieve voltage gain, and no additional high voltage input is required. The Boost module and the gate drive module may share the same voltage rail for power without providing other voltage rails to achieve the desired function of the circuit.
Fig. 4 is a schematic diagram of logic operation waveforms of a gate driving module according to an embodiment of the present utility model. In fig. 4, PWM and nEN are two pulse waves with the same pulse width and different trigger times, and are provided by the front-end MCU, and the pulse width, repetition frequency and phase thereof can be adjusted according to the requirement of the circuit design. The gate drive signal OUT output of the MOS switch is high if and only if the PWM output level is high and the nEN output level is high, otherwise the OUT signal output is low.
The driving capability of the MOS switch can be enhanced by using the driving circuit. In the embodiment, the grid driving module is designed to improve the driving capability of the MOS switch, reduce the system delay and improve the measurement precision.
By logically processing the input control pulse, the MOS switch driving pulse is narrower and controllable. The grid driving module designed in the embodiment can carry out logic operation on two paths of driving signals output from the MCU, so that narrower pulse width is obtained, and the requirement on the pulse width of a front-end signal is reduced.
In the above-mentioned laser emitting module, the semiconductor laser may use a Vertical-Cavity Surface emitting laser (Vertical-Cavity Surface-EMITTING LASER, VCSEL) or an Edge emitting laser (Edge-EMITTING LASER, EEL) to emit pulsed laser.
Taking a laser source such as a vertical cavity surface emitting laser as an example, the method can realize efficient and stable pulse laser emission. The VSCEL laser has the advantages of relatively stable wavelength, higher instantaneous laser power, higher energy utilization efficiency and the like, can realize better pulse laser emission, and prolongs the service life of the system.
The driving circuit design based on VSCEL and other lasers can realize instantaneous high-power and narrow-pulse laser emission under small volume, thereby achieving the aim of ranging. The circuit design has the advantages of high integration level, stable laser beam quality, long service life, easy expansion into a two-dimensional array, low divergence angle, high photoelectric conversion efficiency, convenience in manufacturing and testing and the like.
The embodiment of the utility model provides a semiconductor laser, which comprises a driving circuit of the semiconductor laser.
The embodiment of the utility model provides a laser radar system which comprises the semiconductor laser.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present utility model. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present utility model is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The driving circuit of the semiconductor laser is characterized by comprising a Boost module, a grid driving module and a laser emitting module;
the high-voltage output end of the Boost module is connected with the laser emission module;
the grid driving module comprises a grid driving circuit, the input end of the grid driving circuit is respectively connected with two different pulse signal output ends of the control unit through two routes, the output end of the grid driving circuit is connected with the grid of the switching element of the laser emitting module, and the grid driving circuit carries out logic operation on the two input pulse signals and then outputs the two pulse signals;
The laser emission module comprises a switch element and a semiconductor light-emitting element, wherein the semiconductor light-emitting element is connected with the switch element and is connected between a high-voltage output end of the Boost module and the ground;
The Boost module shares the same voltage rail power supply as the gate drive module.
2. The drive circuit of a semiconductor laser according to claim 1, wherein the laser emitting module includes a vertical cavity surface emitting laser or an edge emitting laser.
3. The driving circuit of a semiconductor laser according to claim 1, wherein the gate driving circuit performs an and operation on the input two pulse signals and outputs the result.
4. A driving circuit of a semiconductor laser according to claim 1 or 3, wherein a pulse width of the pulse signal output from the gate driving circuit is smaller than a pulse width of two pulse signals input.
5. The driving circuit of the semiconductor laser according to claim 1, wherein the Boost module comprises a Boost chip, an energy storage inductor, a voltage dividing resistor and an energy storage capacitor;
The power input pin of the Boost chip is connected with a power supply voltage, the power input pin and the enabling pin are respectively connected to two ends of the energy storage inductor, and the output voltage feedback pin is connected between the two voltage dividing resistors;
the two voltage dividing resistors are connected in series and then connected with the energy storage capacitor in parallel, and one end of the energy storage capacitor is connected with the energy storage inductor, and the other end of the energy storage capacitor is grounded.
6. The drive circuit of a semiconductor laser according to claim 1, wherein the Boost module includes a Boost circuit;
The Boost circuit comprises a switching element, and the grid electrode of the switching element is connected with the control logic signal output end of the control unit.
7. The driving circuit of a semiconductor laser according to claim 1, wherein the semiconductor light emitting element is a laser diode.
8. The drive circuit of a semiconductor laser according to claim 7, wherein the laser emitting module further comprises a protection diode;
The protection diode is reversely connected with the anode and the cathode of the laser diode.
9. A semiconductor laser comprising the semiconductor laser driving circuit according to any one of claims 1 to 8.
10. A lidar comprising the semiconductor laser of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322462262.7U CN220830184U (en) | 2023-09-11 | 2023-09-11 | Semiconductor laser driving circuit, semiconductor laser, and laser radar |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322462262.7U CN220830184U (en) | 2023-09-11 | 2023-09-11 | Semiconductor laser driving circuit, semiconductor laser, and laser radar |
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| CN220830184U true CN220830184U (en) | 2024-04-23 |
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| CN202322462262.7U Active CN220830184U (en) | 2023-09-11 | 2023-09-11 | Semiconductor laser driving circuit, semiconductor laser, and laser radar |
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