CN220796655U - Gas circuit device and laser annealing equipment thereof - Google Patents

Abstract

The utility model discloses a gas circuit device, comprising: the base is provided with a pressurizing cavity, the pressurizing cavity is used for pressurizing inert gas flowing in from the inert gas inflow pipeline, the inert gas inflow pipeline is also used for penetrating a laser beam, and the laser annealing equipment is also disclosed. The gas circuit device is provided with a pressurizing cavity, and the pressure of the inert gas inlet is increased to form an inert gas protection barrier.

Description

Gas circuit device and laser annealing equipment thereof

Technical Field

The utility model relates to the field of semiconductor integrated circuits, in particular to a gas circuit device and laser annealing equipment thereof.

Background

When impurity doping is performed on the surface of a silicon-based semiconductor device, the doped impurity atoms are often in a defective state in the silicon lattice, and thus thermal annealing is generally required. The thermal annealing processes currently used include Rapid Thermal Processing (RTP) and laser annealing. Inert gas needs to be filled in the existing laser annealing process to form a protective environment, and the existing gas path system is difficult to reach the pressure requirement.

Disclosure of Invention

The first aspect of the utility model discloses a gas path device, which is applied to laser annealing equipment and comprises: the laser beam laser comprises a base and an inert gas inflow pipeline, wherein the inert gas inflow pipeline is communicated with the base, and the base is provided with a pressurizing cavity which is used for pressurizing inert gas flowing in from the inert gas inflow pipeline and also used for penetrating a laser beam.

Optionally, the base includes the connecting piece, and set up the gas guiding device of connecting piece one end, the inside exhaust gas discharge channel that is equipped with of connecting piece.

Optionally, the pressurizing cavity is provided with a first opening and a second opening, wherein the first opening is used for injecting the laser beam, the second opening is used for injecting the laser beam, and the second opening is also used for allowing the inert gas to flow out.

Optionally, the gas guiding device comprises an upper layer module and a lower layer module, wherein the upper layer module is arranged at the upper end of the lower layer module.

Optionally, the upper module is provided with a plurality of inert gas inflow ports, and the inert gas inflow ports are communicated with an inert gas inflow pipeline.

Optionally, an annular gas inflow channel is arranged in the upper layer module along the horizontal direction, and the gas inflow channel is communicated with the inert gas inflow port.

Optionally, the upper module is provided with a through hole along the vertical direction, and the top of the through hole is provided with a laser protection mirror.

Optionally, the lower module is provided with an annular exhaust channel, an exhaust outlet is arranged at the bottom of the lower module, the exhaust outlet is communicated with the exhaust channel, and the exhaust channel is communicated with the exhaust gas exhaust channel.

Optionally, the lower module is provided with a pressurizing cavity penetrating along the vertical direction, and the pressurizing cavity is communicated with the gas inflow channel.

A second aspect of the present utility model discloses a laser annealing apparatus comprising any one of the gas path devices described above.

The utility model has the beneficial effects that: the gas path device is designed with an annular gas inflow path, and the pressure of the gas is increased through the pressurizing cavity to form an inert gas protection barrier, so that oxidation is avoided when the metal coating on the surface of the wafer is annealed. Furthermore, the air inlet pressure of inert gas is increased through the air inlet of the pressurizing cavity, and the phenomenon that the protection effect is weakened due to the fact that the pressure is too small and is sucked by the air exhaust device is avoided.

Drawings

The utility model is further described below with reference to the drawings and examples.

FIG. 1 is a perspective view of a gas circuit device in one embodiment of the present application;

FIG. 2 is a cross-sectional view of a base of the gas circuit device in one embodiment of the present application.

Detailed Description

For a better understanding of the technical content of the present utility model, specific examples are set forth below, along with the accompanying drawings.

Aspects of the utility model are described in this disclosure with reference to the drawings, in which are shown a number of illustrative embodiments. The embodiments of the present disclosure are not necessarily intended to include all aspects of the utility model. It should be understood that the various concepts and embodiments described above, as well as those described in more detail below, may be implemented in any of a number of ways, as the disclosed concepts and embodiments are not limited to any implementation. Additionally, some aspects of the disclosure may be used alone or in any suitable combination with other aspects of the disclosure.

It will be understood that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present utility model, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. The meaning of "a plurality of" is one or more, unless specifically defined otherwise.

In the description of the present utility model, it should be understood that the terms "center," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.

Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment," "in some embodiments," or "in some embodiments" in various places throughout this specification are not all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

Referring to fig. 1-2 together, a laser annealing apparatus and a gas path device provided in an embodiment of the present application will now be described.

The laser annealing equipment comprises a gas path device 40 and a controller, wherein the gas path device 40 is used for blowing inert gas into the position of the wafer, and the controller is used for controlling the gas path device 40 to blow the inert gas into the position of the wafer.

In one embodiment, the gas path apparatus 40 is applied to a laser annealing device, and the gas path apparatus 40 includes a susceptor 401, and an inert gas inflow line (not shown), and the susceptor 401 is in communication with the inert gas inflow line. The susceptor 401 is provided with a pressurizing chamber 412 for pressurizing the inert gas flowing in from the inert gas inflow line and also for passing the laser beam.

In one embodiment, the pressurizing chamber 412 is provided with a channel through which a laser beam is passed, the laser beam being injected from one end of the pressurizing chamber 412 and being emitted from the other end.

In one embodiment, the pressurizing chamber 412 is provided with two openings, a first opening for the laser beam to enter and a second opening for the laser beam to exit, and the second opening is also for the inert gas to exit.

In one embodiment, the pressurizing chamber 412 is further provided with a third opening for flowing an inert gas into the pressurizing chamber.

In one embodiment, the air path device 40 further includes an exhaust gas discharge channel 402, and the base 401 is in communication with the exhaust gas discharge channel 402.

In one embodiment, the base 401 includes a gas guiding device 403 and a connecting member 404, and optionally, the gas guiding device 403 is disposed at one end of the connecting member 404, and the gas guiding device 403 has a substantially arcuate shape. In other embodiments, the gas channeling means 403 may be of other shapes.

In one embodiment, the connecting member 404 is generally elongated, and the connecting member 404 has an exhaust gas discharge channel 402 therein, and the exhaust gas discharge channel 402 extends from an end of the connecting member 404 remote from the gas guiding device 403.

In one embodiment, the connecting member 404 has a cavity therein, and the exhaust gas discharge passage 402 is formed by a separate pipe, and the connecting member 404 communicates with the exhaust gas discharge passage 402.

In one embodiment, the gas circuit device 40 further includes a connection bracket 414, where the connection bracket 414 is fixedly connected to the base 401, and further is fixedly connected to the connection member 404, and the base 401 is fixed at a relative position of the laser annealing apparatus by the connection bracket 414.

In one embodiment, referring to fig. 2, the gas guiding device 403 includes an upper module 405 and a lower module 406, wherein the upper module 405 is disposed at an upper end of the lower module 406 and is fixedly connected to the upper module and the lower module.

In one embodiment, an inert gas inflow port 407 is provided on one side of the upper module 405, and the inert gas inflow port 407 communicates with an inert gas inflow line (not shown).

In one embodiment, the upper module 405 is provided with a plurality of inert gas inflow ports 407, and the inert gas inflow ports 407 are in communication with an inert gas inflow line. The inert gas inflow ports 407 may be 2, 3, 4, etc. In this embodiment, the inert gas inflow ports 407 are four and are arranged side by side. Providing a plurality of inert gas inflow ports 407 facilitates the simultaneous filling of a sufficient amount of inert gas to ensure that the concentration of inert gas reaches a preset concentration, thereby ensuring the completion of the annealing process.

In one embodiment, an annular gas inflow passage 408 is provided in the upper module 405 in the horizontal direction, and the gas inflow passage 408 communicates with the inert gas inflow port 407.

In one embodiment, the upper module 405 is provided with a through hole 409 along a vertical direction, and the through hole 409 is used for irradiation of a laser beam.

In one embodiment, a laser protection mirror 410 is disposed on top of the through hole 409, and the laser protection mirror 410 is used to prevent the core component on the optical path from being damaged by a large amount of energy collected during the laser annealing.

In one embodiment, the lower module 406 is provided with an annular exhaust passage 413, and an exhaust outlet 411 is arranged at the bottom of the lower module 406, optionally, the exhaust outlet 411 is arranged in an annular shape, the exhaust outlet 411 is communicated with the exhaust passage 413, and the exhaust passage 413 is communicated with the exhaust gas exhaust passage 402. The annealed exhaust gas may be drawn into the exhaust passage 413 through the exhaust outlet 411 and then discharged from the laser annealing apparatus through the exhaust gas discharge passage 402.

In one embodiment, the lower module 406 is provided with a pressurizing chamber 412 penetrating in a vertical direction, and the pressurizing chamber 412 communicates with the gas inflow passage 408. The pressurizing chamber 412 is configured to pressurize the inert gas flowing in, thereby increasing the pressure of the inert gas in the annealing environment, and the inert gas is beneficial to better completing the annealing process when being blown down to the wafer, and the pressurizing chamber is opposite to the through hole 409, and the pressurizing chamber 412 is also configured to pass through the laser beam. The laser beam passes through the through hole and then passes through the pressurizing cavity to finally reach the wafer under the pressurizing cavity. It will be appreciated that the upper opening of the pressurizing chamber 412 is the first opening, the lower opening is the second opening, and the third opening is in communication with the gas inflow path 408.

In one embodiment, the gas path device 40 is provided with a pressurizing chamber 412, and further, the base 401 is provided with a pressurizing chamber 412, and the pressurizing chamber 412 is used for pressurizing the inert gas flowing in and passing through the laser beam.

In one embodiment, the pressurizing chamber 412 is conical, and the gas is pressurized as it passes through the pressurizing chamber 412 from top to bottom.

In one embodiment, the pressurizing chamber 412 is a truncated cone, and has a larger upper surface and a smaller lower surface, which also serves as a pressurizing function. In other embodiments, the pressurizing chamber 412 may be pyramid-shaped, trumpet-shaped, etc., as long as the shape of the gas that is pressurized after passing through the pressurizing chamber 412 is satisfied.

In one embodiment, the inert gas inflow is greater than 10sLm and less than 50sLm, and in one embodiment greater than 20sLm and less than 40sLm, alternatively 30sLm.

In one embodiment, the lower module 406 is integrally formed with the connector 404, such that the upper module 405 is disposed at the upper end of the connector 404.

In one embodiment, the inert gas may be any one or a combination of inert gases such as nitrogen, helium, neon, argon, krypton, xenon, radon, and the like, and in another embodiment, may be a mixture of the foregoing gases. In this example, nitrogen or argon.

The fixed connection of the present application may be selected from screw connection, riveting, welding, etc., without limitation.

The gas path device 40 is designed with an annular gas inflow path, and the pressurizing cavity increases the gas inlet pressure and simultaneously gathers and blows inert gas to the position of the surface of the wafer irradiated by laser, so as to form a protective barrier and prevent the metal coating on the surface of the wafer from being oxidized during annealing. Furthermore, the air inlet pressure of inert gas is increased through the air inlet of the pressurizing cavity, and the phenomenon that the protection effect is weakened due to the fact that the pressure is too small and is sucked by the air exhaust device is avoided.

The foregoing is merely illustrative of the present utility model, and the present utility model is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present utility model should be included in the present utility model. Therefore, the protection scope of the present utility model should be subject to the protection scope of the claims.

Claims (10)

1. A gas circuit device for use in a laser annealing apparatus, comprising: the laser beam laser comprises a base and an inert gas inflow pipeline, wherein the inert gas inflow pipeline is communicated with the base, and the base is provided with a pressurizing cavity which is used for pressurizing inert gas flowing in from the inert gas inflow pipeline and also used for penetrating a laser beam.

2. The gas circuit apparatus of claim 1, wherein the pressurizing chamber is provided with a first opening into which the laser beam is injected and a second opening into which the laser beam is injected, the second opening being further used for the outflow of the inert gas.

3. The gas circuit device according to claim 2, wherein the base comprises a connector and a gas guiding device arranged at one end of the connector, and an exhaust gas discharge channel is arranged in the connector.

4. A gas circuit arrangement according to claim 3, wherein the gas flow directing means comprises an upper module and a lower module, wherein the upper module is arranged at the upper end of the lower module.

5. The gas circuit device of claim 4, wherein the upper module is provided with a plurality of inert gas inflow ports, the inert gas inflow ports being in communication with the inert gas inflow line.

6. A gas circuit device according to claim 5, wherein an annular gas inflow passage is provided in the upper module in the horizontal direction, and the gas inflow passage communicates with the inert gas inflow port.

7. The gas circuit device according to claim 4, wherein the upper module is provided with a through hole along a vertical direction, and a laser protection mirror is arranged at the top of the through hole.

8. The gas circuit device of claim 4, wherein the lower module is provided with an annular exhaust passage, and wherein the lower module bottom is provided with an exhaust outlet, the exhaust outlet being in communication with the exhaust passage, and the exhaust passage being in communication with an exhaust gas discharge passage.

9. The gas circuit device according to claim 6, wherein the lower module is provided with a pressurizing chamber penetrating in a vertical direction, and the pressurizing chamber is communicated with the gas inflow channel.

10. A laser annealing apparatus characterized in that: gas circuit arrangement according to any one of claims 1-9.