CN220724338U - Tray structure and thin film deposition equipment - Google Patents

Abstract

The utility model discloses a tray structure and a thin film deposition apparatus. The tray structure includes: the tray body is arranged in the reaction cavity and used for placing the wafer, and a first compensation channel through which heat-conducting gas is introduced is arranged at a first contact part of the tray body and the wafer outer ring; the at least one first temperature sensor is arranged on the first compensation channel to collect the temperature of the outer ring of the wafer; at least one second temperature sensor arranged at the second contact part of the tray body and the wafer inner ring to collect the inner ring temperature of the wafer; and the pressure regulator is respectively connected with the first temperature sensor and the second temperature sensor to acquire the outer ring temperature and the inner ring temperature of the wafer, and regulates the pressure of the heat-conducting gas in the first compensation channel to make the outer ring temperature and the inner ring temperature equal. The utility model can improve the defect of overlarge film thickness difference caused by the difference of temperatures of different wafers when the deposition process is carried out, thereby improving the uniformity of film thickness among the wafers and the stability of the process of a lifting platform.

Description

Tray structure and thin film deposition equipment

Technical Field

The utility model relates to the technical field of semiconductor processing, in particular to a tray structure and thin film deposition equipment.

Background

In the process of thin film deposition, for example, in the process of cleaning multiple depositions of high density plasma chemical vapor deposition (High Density Plasma Chemical Vapor Deposition, HDPCVD for short), the temperature of the reaction chamber and the wafer tray at the end of the cleaning operation is different from the corresponding temperature at the end of the deposition process. However, in the process parameter setting, the pressure setting of the independent cooling system of the heat-conducting gas is the same, so that the cooling effect on the wafers is the same at the end of the deposition process or at the end of the cleaning operation, which results in that in one cycle of one cleaning for multiple depositions, different wafers have different temperatures when the deposition process is performed, and thus the film thickness difference is too large, so that the uniformity of the film thickness among the wafers cannot meet the requirements of customers.

In order to solve the above-mentioned problems in the prior art, there is a need in the art for an improved tray structure that can improve the defects of excessive film thickness differences caused by temperature differences of different wafers during deposition process, thereby improving the uniformity of film thickness between wafers and the stability of the lift stage during process.

Disclosure of Invention

The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

In order to overcome the defects in the prior art, the utility model provides a tray structure and thin film deposition equipment, which can improve the defects of overlarge film thickness difference caused by temperature difference of different wafers in the process of deposition, thereby improving the uniformity of film thickness among the wafers and improving the stability of a platform in the process.

Specifically, the above-mentioned tray structure provided according to the first aspect of the present utility model includes: the tray body is arranged in the reaction cavity and used for placing the wafer, and a first compensation channel communicated with heat conducting gas is arranged at a first contact part of the tray body and the wafer outer ring; the at least one first temperature sensor is arranged on the first compensation channel to acquire the temperature of the outer ring of the wafer; at least one second temperature sensor arranged at a second contact part of the tray body and the wafer inner ring so as to collect the inner ring temperature of the wafer; and the pressure regulator is respectively connected with the first temperature sensor and the second temperature sensor to acquire the outer ring temperature and the inner ring temperature of the wafer, and regulates the pressure of the heat-conducting gas in the first compensation channel to make the outer ring temperature equal to the inner ring temperature.

Further, in some embodiments of the utility model, the pressure regulator is connected to a first cooling system providing the thermally conductive gas, and the pressure of the thermally conductive gas introduced into the first compensation passageway is regulated by regulating the pressure of the thermally conductive gas within the first cooling system.

Further, in some embodiments of the utility model, the thermally conductive gas comprises helium.

Further, in some embodiments of the present utility model, a second contact portion between the tray body and the inner wafer ring is provided with a second compensation channel through which the heat-conducting gas passes, and the at least one second temperature sensor is disposed on the second compensation channel.

Further, in some embodiments of the present utility model, the pressure regulator is further connected to the second compensation channel, for cooperatively regulating the pressure of the heat-conducting gas in the first compensation channel and the second compensation channel so that the temperature of the outer ring is equal to the temperature of the inner ring, and the temperature of each wafer during each deposition process is kept the same.

Further, in some embodiments of the utility model, the pressure regulator is connected to a second cooling system that provides the thermally conductive gas, and the pressure of the thermally conductive gas to the second compensation passageway is regulated by regulating the pressure of the thermally conductive gas within the second cooling system.

Further, in some embodiments of the present utility model, a plurality of the first temperature sensors are distributed on the first compensation channel, for measuring the outer ring temperatures of a plurality of temperature acquisition points of the wafer outer ring.

Further, in some embodiments of the present utility model, the first compensation channel includes an air inlet for introducing the heat transfer gas and an air outlet for discharging the heat transfer gas after at least one cleaning operation is completed.

Further, in some embodiments of the present utility model, the tray structure further comprises: and the display is used for displaying the temperature of the outer ring acquired by the at least one first temperature sensor and the temperature of the inner ring acquired by the at least one second temperature sensor.

In addition, according to the thin film deposition apparatus provided in the second aspect of the present utility model, the reaction chamber includes the tray structure provided in the first aspect of the present utility model therein, so as to perform a deposition process on the wafer placed on the tray structure; and a remote plasma source connected to the reaction chamber for cleaning the interior of the reaction chamber where the process deposition is completed at least once.

Drawings

The above features and advantages of the present utility model will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.

FIG. 1 illustrates a schematic cross-sectional view of a tray structure provided in accordance with some embodiments of the present utility model;

FIG. 2 illustrates a front interior schematic view of a tray structure provided in accordance with some embodiments of the present utility model; and

fig. 3 illustrates a partial cross-sectional view of a first compensation channel of a tray structure provided in accordance with some embodiments of the utility model.

Reference numerals:

100. a tray structure;

110. a tray body;

111. a base;

112. a protective layer;

113. an insulating ring;

114. a focus ring;

115. shallow holes;

120. a first contact portion;

121. a first compensation channel;

1211. an air inlet;

1212. an exhaust port;

122. a first temperature sensor;

130. a second contact portion;

131. a second compensation channel;

132. a second temperature sensor;

140. a cooling channel;

150. a plasma; and

200. and (3) a wafer.

Detailed Description

Further advantages and effects of the present utility model will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present utility model with specific examples. While the description of the utility model will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the utility model described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the utility model. The following description contains many specific details for the purpose of providing a thorough understanding of the present utility model. The utility model may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the utility model.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.

In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the utility model as it is described in terms of the apparatus being manufactured or operated in a particular orientation.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present utility model.

As described above, in a thin film deposition process, for example, in a single cleaning process for multiple depositions of high-density plasma chemical vapor deposition (High Density Plasma Chemical Vapor Deposition, HDPCVD for short), there is a difference between the temperature of the reaction chamber and the wafer tray at the end of the cleaning operation and the corresponding temperature at the end of the deposition process. However, in the process parameter setting, the pressure setting of the independent cooling system of the heat-conducting gas is the same, so that the cooling effect on the wafers is the same at the end of the deposition process or at the end of the cleaning operation, which results in that in one cycle of one cleaning for multiple depositions, different wafers have different temperatures when the deposition process is performed, and thus the film thickness difference is too large, so that the uniformity of the film thickness among the wafers cannot meet the requirements of customers.

In order to solve the problems in the prior art, the utility model provides a tray structure and a thin film deposition device, which can improve the defects of overlarge film thickness difference caused by temperature difference of different wafers in the deposition process, thereby improving the uniformity of film thickness among the wafers and improving the stability of the process of a platform.

In some non-limiting embodiments, the tray structure provided in the first aspect of the present utility model may be configured in the thin film deposition apparatus provided in the second aspect of the present utility model. The working principle of the above-described thin film deposition apparatus will be described below in connection with some embodiments of the tray structure.

Specifically, in some non-limiting embodiments, the thin film deposition apparatus provided in the second aspect of the present utility model may include a reaction chamber and a remote plasma source (Remote Plasma System, RPS for short). Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a tray structure according to some embodiments of the present utility model. As shown in fig. 1, a tray structure 100 provided in the first aspect of the present utility model may be included in the interior of the reaction chamber to perform a deposition process on a wafer 200 placed on the tray structure 100. The remote plasma source may be coupled to the reaction chamber and may perform a cleaning operation on an interior of the reaction chamber after at least one process deposition is completed.

Specifically, after the remote plasma source is energized, a process gas, such as nitrogen trifluoride (NF) ₃ ) The plasma 150 is generated by dissociation, the plasma 150 is uniformly sprayed and diffused into the reaction cavity, and the plasma is subjected to chemical reaction with the deposited film in the reaction cavity including the top, the side wall, the surface of the tray and other areas, so that the deposited film in the reaction cavity is cleaned, and a gas product generated after the reaction is pumped out of the reaction cavity through a vacuum pump.

To further illustrate the tray structure 100 described above, referring to fig. 2 in combination, fig. 2 illustrates a schematic front internal structure of a tray structure provided according to some embodiments of the present utility model.

As shown in fig. 1 and 2, in some embodiments of the utility model, a tray structure 100 may include: the tray body 110 (dashed box structure in fig. 1) is disposed in the reaction chamber, on which the wafer 200 is placed. The first contact portion 120 between the tray body 110 and the outer ring of the wafer 200 may be provided with a first compensation channel 121 through which a heat conductive gas is introduced. Alternatively, the first compensation channel 121 may include a plurality of channels. At least one first temperature sensor 122 may be provided on the first compensation channel 121 to collect the outer ring temperature of the wafer 200.

At least one second temperature sensor 132 may be disposed at the second contact portion 130 between the tray body 110 and the inner ring of the wafer 200 for collecting the temperature of the inner ring of the wafer 200. The tray structure 100 may further include a pressure regulator (not shown in fig. 1) connected to the first temperature sensor 122 and the second temperature sensor 132, respectively, for obtaining the outer ring temperature and the inner ring temperature of the wafer 200, and adjusting the pressure of the heat-conducting gas in the first compensation channel 121, so that the outer ring temperature is equal to the inner ring temperature.

Specifically, in some alternative embodiments, the tray body 110 may be an electrostatic chuck (Electrostatic chuck, abbreviated as E-chuck), and the interior thereof is formed of an aluminum Base 111 (Al Base). Further, as shown in fig. 1, a protective layer 112 may be further included between the base 111 and the surface of the tray body 110 for insulation protection. In the process of clamping the wafer 200, a dc voltage is applied to the wafer 200 and the electrostatic chuck, forming an electrode difference between the wafer 200 and the electrostatic chuck, and the wafer 200 may be clamped to the electrostatic chuck by an electrostatic attraction force.

Further, as shown in fig. 1, an insulating ring 113 (Insulation ring) and a Focus ring 114 (Focus ring) thereon may be further included on the outer side of the tray body 110. By arranging the insulating ring 113, the loss of the focusing ring 114 caused by the direct erosion of the outer edge of the focusing ring 114 by plasma generated in the semiconductor manufacturing process can be avoided, so that the loss of the focusing ring and other insulating components is reduced, the service life of the focusing ring is prolonged, the etching uniformity of the wafer 200 in the etching treatment process can be improved, and the yield of products is correspondingly improved.

As shown in fig. 1 and 2, since the wafer 200 generates heat during the process, a cooling passage 140 may be provided inside the tray body 110, and a cooling liquid (an inlet and an outlet of the cooling liquid correspond to inlet and outlet arrows at both ends of the cooling passage 140) such as water may be introduced therein to cool the wafer 200. However, since the distribution of the cooling channels 140 may not be distributed over the entire surface of the wafer 200, certain areas of the wafer 200 may not be cooled, which directly affects the uniformity of the wafer film formation. For example, in fig. 2, the cooling channels 140 are distributed in the middle region of the wafer 200, so that the cooling effect of the middle region of the wafer 200 is good, but the cooling effect of the outer peripheral region thereof is general.

In some embodiments of the present utility model, the outer ring temperature detection point may be added to the first compensation channel 121 of the outer ring of the wafer 200 and the tray body 110, for example, at least one first temperature sensor 122 is added to monitor the real-time temperature of the outer ring of the wafer 200 during the process deposition, and the pressure of the heat-conducting gas in the first compensation channel 121, that is, the pressure of the heat-conducting gas under the outer ring of the wafer 200 is adjusted to compensate the temperature difference, so as to cool the outer ring of the wafer 200.

Further, referring to fig. 1, and in particular to the enlarged partial view I of the surface of the tray body 110 contacting the wafer 200 in fig. 1, a plurality of shallow holes 115 may be further included on the surface of the tray body 110, and a heat-conducting gas may be introduced into the shallow holes 115 to cool the wafer 200 contacting thereabove.

Alternatively, helium (He) may be selected as the heat transfer gas in the first compensation channel 121. Since helium has good thermal conductivity, in this embodiment, the temperature of the outer ring of the wafer 200 can be controlled by using the thermal conduction of helium. Specifically, since the thermal conductivity of helium gas varies as a function of the pressure of helium gas in a certain pressure range, the pressure of helium gas can be controlled by a pressure regulator, thereby controlling the thermal conductivity of helium gas. Due to the heat generated during the processing of the wafer 200, the temperature of the outer ring of the wafer 200 during the deposition process and during the cleaning process can be adjusted, for example, the outer ring of the wafer 200 is cooled.

Further, in some embodiments, one end of the pressure regulator may be connected to a separate first cooling system (not shown in the drawings) that provides the thermally conductive gas, and the other end may be connected to the first compensation channel 121. The pressure of the heat conducting gas in the first cooling system can be regulated by the pressure regulator, so that the pressure of the heat conducting gas flowing into the first compensation channel 121 is regulated, namely, the pressure regulator is linked with the first temperature sensor 122.

Specifically, optionally, when helium is selected as the heat-conducting gas, during a process of performing multiple deposition and one cleaning (Multi-dep/1 clean) in the reaction chamber, when wafers in different deposition processes are deposited, the pressure of helium in the first cooling system can be adjusted in real time through the pressure regulator each time, so that the pressure of helium introduced into the first compensation channel 121 is adjusted in real time, the temperature of the inner ring and the outer ring of the tray body 110 is stabilized in a window interval required by a process, and temperature compensation is performed on the outer ring temperature of the wafer 200 placed on the tray body so as to keep the same with the inner ring temperature of the wafer 200.

Further, in the process of cleaning for multiple depositions once, by adjusting the helium pressure in the first compensation channel 121 in real time, the temperature of different wafers in each deposition process can be kept consistent, even if the deposition temperature of each deposition process is maintained within a certain window range, thereby realizing the technical effect of improving the uniformity of the film thickness between the wafers. Specifically, in some preferred embodiments, a display may be included in the tray structure 100 to display the outer ring temperature of the wafer 200 collected by the at least one first temperature sensor 122. When the detected outer ring temperature of the wafer 200 is too high, as shown by the display, the outer ring temperature of the wafer 200 can be lowered by increasing the helium pressure in the first compensation channel 121 to increase the thermal conductivity and thus the heat transferred to the cooling channel 140. When the detected outer ring temperature of the wafer 200 displayed by the display is too low, the heat conductivity can be reduced by reducing the helium pressure in the first compensation channel 121, thereby reducing the heat transferred to the cooling channel 140, and thus increasing the outer ring temperature of the wafer 200. In this embodiment, the pressure of the helium gas in the first compensation channel 121 may be adjusted in real time based on the outer ring temperature of the wafer 200 fed back by the first temperature sensor 122, so as to perform dynamic temperature adjustment until the outer ring temperature displayed on the display reaches the temperature range required by the process temperature.

Further, because the required temperatures are different from process to process, it is often necessary to control the temperature to be less than a fixed value. In some embodiments, process temperature fluctuations for each wafer may be controlled to within 10 degrees.

Compared with the prior art, the cooling system is set by pressure according to the process parameters, so that the cooling effect on the wafer is also fixed. In the process of cleaning multiple times of deposition, especially in each deposition process, deposition temperatures of different wafers can be different, and temperature compensation cannot be performed, which can cause wafer film thickness differences. In the above embodiment, the temperature of the outer ring of the wafer in each deposition process can be dynamically adjusted in real time, so as to ensure that the deposition temperatures of different wafers are the same and avoid the film thickness difference of different wafers.

As shown in fig. 1, the first temperature sensor 122 may also be disposed outside the first compensation channel 121, for example, at the edge of the tray body 110, so as to more accurately measure the temperature of the outer ring of the wafer 200. It will be understood by those skilled in the art that the location of the first temperature sensor 122 is not limited to the first compensation channel 121, and may be located near the first compensation channel 121, as long as the temperature of the outer ring of the wafer 200 can be accurately measured.

Further, preferably, a plurality of first temperature sensors 122 may be distributed on the first compensation channel 121, so that the outer ring temperatures of a plurality of temperature collection points on the outer ring of the wafer 200 may be measured, so as to ensure the accuracy of the collected outer ring temperatures of the wafer 200. In the prior art, there is only one wafer temperature detection point at the center of the tray body, and the detected temperature of the point is used to represent the overall temperature of the wafer, so that the temperature difference between the center and the edge of the wafer in the deposition process is easily ignored, and the uniformity of the film thickness in the wafer cannot be finely adjusted.

In some preferred embodiments, as shown in fig. 2, the second contact portion 130 between the tray body 110 and the inner ring of the wafer 200 may further be provided with a second compensation channel 131 through which the heat-conducting gas passes, and at least one second temperature sensor 132 may be disposed on the second compensation channel 131. One end of the pressure regulator may be connected to a second cooling system for supplying a heat-conducting gas, and the other end may be connected to a second compensation channel 131 for cooperatively regulating the pressure of the heat-conducting gas in the first and second compensation channels 121 and 131 so that the temperature of the outer ring of the wafer 200 is equal to the temperature of the inner ring thereof, and also so that the temperature of each wafer during each deposition process is kept the same.

Further, the display in the tray structure 100 may also be used to display the temperature of the inner ring of the wafer 200 collected by the at least one second temperature sensor 132, that is, the display may simultaneously display the temperature of the outer ring of the wafer 200 collected by the first temperature sensor 122 and the temperature of the inner ring of the wafer 200 collected by the second temperature sensor 132, so as to adjust the temperature of the outer ring and the temperature of the inner ring of the wafer 200 in real time, so as to keep the same. In addition, the temperature of the wafer 200 in each deposition and cleaning process can be adjusted in real time, so that the temperature of the wafer 200 in each deposition and cleaning process is stabilized in a window area required by the process.

It will be appreciated that the temperature of the outer ring and the temperature of the inner ring of the wafer are kept equal in the present utility model, and the wafer temperature is kept the same during each deposition, and the temperatures are not absolutely identical, so long as they are within a suitable small range, and the temperature range does not affect the uniformity of the deposited film.

Alternatively, in some embodiments, the pressure regulator may use a mass flow controller (Mass Flow Controller, abbreviated as MFC), which not only can accurately measure the gas flow, but also can automatically control the gas flow, i.e. the user can set the flow as required, and the MFC automatically maintains the flow at a set value, even if the system pressure fluctuates or the ambient temperature changes, and does not deviate from the set value.

Referring to fig. 3, fig. 3 illustrates a partial cross-sectional view of a first compensation channel of a tray structure according to some embodiments of the utility model.

As shown in fig. 3, the first compensation passageway 121 may include an inlet 1211 and an outlet 1212. The inlet 1211 may be filled with a thermally conductive gas, such as helium, for temperature compensation of at least the outer ring temperature of the wafer 200. The exhaust port 1212 may exhaust the heat conductive gas after at least one cleaning operation is completed.

It will be appreciated by those skilled in the art that these embodiments of the tray structure 100 described above are merely some non-limiting embodiments provided by the present utility model, and are intended to clearly illustrate the main concepts of the present utility model and to provide some embodiments for convenient public implementation, not for limiting the overall operation or function of the thin film deposition apparatus. Likewise, the thin film deposition apparatus is just one non-limiting embodiment provided by the present utility model, and does not limit the implementation body of the tray structures 100.

In summary, the utility model discloses a tray structure and a thin film deposition device, which can improve the defect of overlarge film thickness difference caused by temperature difference of different wafers in the deposition process, thereby improving the uniformity of film thickness among the wafers and the stability of the process of a lifting platform.

The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A tray structure, comprising:

the tray body is arranged in the reaction cavity and used for placing the wafer, and a first compensation channel communicated with heat conducting gas is arranged at a first contact part of the tray body and the wafer outer ring;

the at least one first temperature sensor is arranged on the first compensation channel to acquire the temperature of the outer ring of the wafer;

at least one second temperature sensor arranged at a second contact part of the tray body and the wafer inner ring so as to collect the inner ring temperature of the wafer; and

the pressure regulator is respectively connected with the first temperature sensor and the second temperature sensor to obtain the outer ring temperature and the inner ring temperature of the wafer, and regulates the pressure of the heat-conducting gas in the first compensation channel to enable the outer ring temperature to be equal to the inner ring temperature.

2. The tray structure of claim 1 wherein the pressure regulator is connected to a first cooling system that provides the thermally conductive gas, the pressure of the thermally conductive gas flowing into the first compensation channel being regulated by regulating the pressure of the thermally conductive gas within the first cooling system.

3. The tray structure of claim 1, wherein the thermally conductive gas comprises helium.

4. The tray structure of claim 1, wherein a second contact portion between the tray body and the inner wafer ring is provided with a second compensation channel through which the heat-conducting gas passes, and the at least one second temperature sensor is disposed on the second compensation channel.

5. The tray structure of claim 4 wherein the pressure regulator is further coupled to the second compensation channel for cooperatively regulating the pressure of the thermally conductive gas in the first and second compensation channels such that the outer ring temperature is equal to the inner ring temperature and the temperature of each wafer during each deposition remains the same.

6. The tray structure of claim 5 wherein the pressure regulator is connected to a second cooling system that provides the thermally conductive gas, the pressure of the thermally conductive gas being regulated to the second compensation channel by regulating the pressure of the thermally conductive gas within the second cooling system.

7. The tray structure of claim 1, wherein a plurality of the first temperature sensors are distributed on the first compensation channel for measuring the outer ring temperature at a plurality of temperature acquisition points of the wafer outer ring.

8. The tray structure of claim 1, wherein the first compensation channel comprises an air inlet for introducing the heat transfer gas and an air outlet for exhausting the heat transfer gas after at least one cleaning operation is completed.

9. The tray structure of claim 1, further comprising:

and the display is used for displaying the temperature of the outer ring acquired by the at least one first temperature sensor and the temperature of the inner ring acquired by the at least one second temperature sensor.

10. A thin film deposition apparatus, comprising:

a reaction chamber including the tray structure according to any one of claims 1 to 9 therein for performing a deposition process on a wafer placed on the tray structure; and

and the remote plasma source is connected with the reaction cavity so as to clean the interior of the reaction cavity where the process deposition is completed at least once.