CN220643335U

CN220643335U - Crucible of single crystal furnace

Info

Publication number: CN220643335U
Application number: CN202322210556.0U
Authority: CN
Inventors: 王成龙; 楼杭炯; 武鹏
Original assignee: Jiangsu Zhongneng Polysilicon Technology Development Co ltd
Current assignee: Jiangsu Zhongneng Polysilicon Technology Development Co ltd
Priority date: 2023-08-17
Filing date: 2023-08-17
Publication date: 2024-03-22
Anticipated expiration: 2033-08-17

Abstract

The utility model discloses a crucible of a single crystal furnace, which comprises an inner crucible, an outer crucible, a crucible body, a crucible bottom plate, a feeding pipe and a protecting plate; the inner crucible, the outer crucible, the crucible upper and the crucible bottom plate are sequentially and fixedly connected, the feeding pipe is arranged between the inner crucible and the outer crucible, and silicon materials are added between the inner crucible and the outer crucible, and silicon liquid is generated after the silicon materials are melted; the protection shield includes integrated into one piece's first board and second board, and first board ring is established in the top of outer crucible and is kept the parallel and level with outer crucible, and the second board sets up between interior crucible and outer crucible and extends to the top of molten silicon along the inner wall of outer crucible, and the protection shield does not react with the silicon material. According to the utility model, the protective plate which does not react with silicon at high temperature is additionally arranged on the outer crucible to cover the inner wall of the outer crucible, so that the outer crucible wall exposed above the silicon liquid is protected from being contacted with silicon materials, the introduction of impurities is reduced, and the service life of the crucible is prolonged.

Description

Crucible of single crystal furnace

Technical Field

The utility model relates to the technical field of continuous Czochralski single crystal, in particular to a crucible of a single crystal furnace.

Background

Continuous Czochralski (CCZ) single crystal pulling requires an inner crucible and an outer crucible, granular silicon or crushed silicon material is added between the inner crucible and the outer crucible through a feed pipe in the crystal pulling process, and the granular silicon or crushed silicon material enters the inner crucible through a hole at the bottom of the inner crucible after being melted between the inner crucible and the outer crucible so as to be pulled in the inner crucible, thereby realizing the process of pulling while feeding.

However, in the feeding process of the feeding pipe, granular silicon or crushed silicon material can jump to the exposed crucible wall above the silicon liquid and react with the exposed crucible wall above the silicon liquid at high temperature to corrode the crucible wall, so that the crucible wall is thinned, and impurities in the crucible enter the silicon liquid to influence the quality of the crystal rod and increase the difficulty of crystal pulling.

Disclosure of Invention

The utility model aims to overcome the defects of the prior art, and provides a crucible of a single crystal furnace, so as to solve the problem that granular silicon or crushed silicon material jumps to the crucible wall to react and corrode the crucible wall in the feeding process of a feeding pipe.

In order to solve the technical problems, the utility model is realized by adopting the following scheme:

the utility model provides a crucible of a single crystal furnace, which comprises an inner crucible, an outer crucible, a crucible body, a crucible bottom plate, a feeding pipe and a protecting plate; the inner crucible, the outer crucible, the crucible upper and the crucible bottom plate are sequentially and fixedly connected, the feeding pipe is arranged between the inner crucible and the outer crucible, and silicon materials are added between the inner crucible and the outer crucible, and silicon liquid is generated after the silicon materials are melted; the protection shield includes integrated into one piece's first board and second board, and first board ring is established in the top of outer crucible and is kept the parallel and level with outer crucible, and the second board sets up between interior crucible and outer crucible and extends to the top of molten silicon along the inner wall of outer crucible, and the protection shield does not react with the silicon material.

Further, the crucible further comprises a heightening ring, the heightening ring is arranged on the crucible, and the first plate is fixedly arranged on the heightening ring.

Further, the second plate is spaced from the inner wall of the outer crucible by 2mm to 5mm.

Further, the lower edge of the second plate is 10 mm-30 mm away from the molten silicon.

Further, the height of the protection plate is 150 mm-300 mm, the outer diameter of the protection plate is 800 mm-1100 mm, and the thickness of the protection plate is 8 mm-15 mm.

Further, the height of the heightening ring is 30 mm-80 mm, the outer diameter of the heightening ring is 800 mm-1100 mm, and the thickness of the heightening ring is 15-30 mm.

Further, the upper portion Gao Huan was 5mm higher than the outer crucible.

Compared with the prior art, the utility model has the beneficial effects that: according to the utility model, the protective plate which does not react with silicon at high temperature is additionally arranged on the outer crucible to cover the inner wall of the outer crucible, so that the outer crucible wall exposed above the silicon liquid is protected from being contacted with silicon materials, the introduction of impurities is reduced, and the service life of the crucible is prolonged.

Drawings

FIG. 1 is a schematic diagram of a crucible structure of a single crystal furnace according to an embodiment of the present utility model;

in the figure: 1. a heightening ring; 2. a protective plate; 3. an inner crucible; 4. an outer crucible; 5. crucible position; 6. a crucible chassis; 7. a silicon liquid; 8. a crystal bar; 9. and a feeding tube.

Description of the embodiments

The utility model is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present utility model, and are not intended to limit the scope of the present utility model.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art in a specific case.

In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.

Referring to fig. 1, the embodiment provides a crucible of a single crystal furnace, which is composed of an inner crucible 3, an outer crucible 4, a crucible upper 5, a crucible bottom plate 6, a feeding pipe 9, a protection plate 2 and a heightening ring 1, wherein the inner crucible 3, the outer crucible 4, the crucible upper 5 and the crucible bottom plate 6 are sequentially and fixedly connected, the feeding pipe 9 is arranged between the inner crucible 3 and the outer crucible 4 and continuously adds silicon material (granular silicon or crushed silicon material) between the inner crucible 3 and the outer crucible 4, silicon liquid 7 is generated after the silicon material is melted, the silicon liquid 7 enters the inner crucible 3 through a hole at the bottom of the inner crucible 3 to draw a crystal rod 8, and feeding and crystal pulling are realized; the crucible upper 5 is provided with the heightening ring 1, the heightening ring 1 is higher than the outer crucible by about 45mm, the protection plate 2 comprises a transverse plate (a first plate) and a vertical plate (a second plate) which are integrally formed, the transverse plate is arranged on the heightening ring 1, thus the heightening ring is arranged above the outer crucible 4 and keeps flush with the outer crucible 4, the vertical plate is arranged between the inner crucible 3 and the outer crucible 4 and extends downwards to the upper side of the silicon liquid 7 along the inner wall of the outer crucible 4, the distance between the vertical plate and the inner wall of the outer crucible 4 is 2 mm-5 mm, the lower edge of the vertical plate is 710 mm-30 mm away from the silicon liquid, the protection plate 2 covers the inner wall of the outer crucible 4, the protection plate 2 does not react with the silicon material at high temperature, the protection plate 2 protects the exposed outer crucible wall above the silicon liquid 7 from contacting with the silicon material, impurity introduction is reduced, and the service life of the crucible is prolonged.

Heightening ring 1: material quality: carbon, height: 30 mm-80 mm, external diameter: 800 mm-1100 mm, thickness: 15-30 mm.

Protection plate 2: material quality: isostatic graphite, carbon ceramic, silicon nitride or silicon carbide, height: 150 mm-300 mm, 800 mm-1100 mm in outer diameter and thickness: 8-15 mm.

The foregoing is merely a preferred embodiment of the present utility model, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present utility model, and such modifications and variations should also be regarded as being within the scope of the utility model.

Claims

1. The crucible of the single crystal furnace is characterized by comprising an inner crucible, an outer crucible, a crucible body, a crucible bottom plate, a feeding pipe and a protecting plate; the inner crucible, the outer crucible, the crucible upper and the crucible bottom plate are sequentially and fixedly connected, the feeding pipe is arranged between the inner crucible and the outer crucible, and silicon materials are added between the inner crucible and the outer crucible, and silicon liquid is generated after the silicon materials are melted; the protection shield includes integrated into one piece's first board and second board, and first board ring is established in the top of outer crucible and is kept the parallel and level with outer crucible, and the second board sets up between interior crucible and outer crucible and extends to the top of molten silicon along the inner wall of outer crucible, and the protection shield does not react with the silicon material.

2. The single crystal furnace crucible of claim 1, further comprising a raised ring, the raised ring being disposed on the crucible band, the first plate being secured to the raised ring.

3. The single crystal furnace crucible of claim 1, wherein the second plate is 2mm to 5mm from the inner wall of the outer crucible.

4. The single crystal furnace crucible of claim 1, wherein the lower edge of the second plate is 10mm to 30mm from the silicon liquid.

5. The single crystal furnace crucible according to claim 1, wherein the height of the protection plate is 150mm to 300mm, the outer diameter of the protection plate is 800mm to 1100mm, and the thickness of the protection plate is 8mm to 15mm.

6. The single crystal furnace crucible according to claim 2, wherein the height of the raised ring is 30mm to 80mm, the outer diameter of the raised ring is 800mm to 1100mm, and the thickness of the raised ring is 15mm to 30mm.

7. The single crystal furnace crucible of claim 2 or 6, wherein the add Gao Huan is 5mm above the outer crucible.