CN220525169U - High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit - Google Patents

High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit Download PDF

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Publication number
CN220525169U
CN220525169U CN202321919233.2U CN202321919233U CN220525169U CN 220525169 U CN220525169 U CN 220525169U CN 202321919233 U CN202321919233 U CN 202321919233U CN 220525169 U CN220525169 U CN 220525169U
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China
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temperature
probe
layer
temperature measuring
bus
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CN202321919233.2U
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Inventor
邢艳平
原玉
朱兴文
刘伟东
徐西家
喻浩峰
侯小龙
王健
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Huaneng Shandong Shidaobay Nuclear Power Co Ltd
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Huaneng Shandong Shidaobay Nuclear Power Co Ltd
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Abstract

The embodiment of the disclosure provides a temperature probe of a closed busbar of a high-temperature gas cooled reactor and a main power generation system circuit, which belong to the technical field of electric instrument control of the high-temperature gas cooled reactor, wherein the temperature probe is used for being arranged on a protective shell of the closed busbar and comprises a temperature measuring layer and a first insulating layer; the temperature measuring layer is used for acquiring a temperature signal inside the enclosed bus; the first insulating layer is arranged on the outer side of the temperature measuring layer in a surrounding mode, and the temperature measuring layer is connected with the grounding end in a single-point grounding mode. The temperature measuring probe of the embodiment can reduce the induced voltage generated when the enclosed bus is charged by surrounding the first insulating layer on the outer side of the temperature measuring layer, reduce the voltage quantity induced by the temperature measuring probe and prevent the temperature measuring probe from being damaged.

Description

High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit
Technical Field
The embodiment of the disclosure belongs to the technical field of high-temperature gas cooled reactor electrical instrument control, and particularly relates to a high-temperature gas cooled reactor enclosed bus temperature measurement probe and a main power generation system circuit.
Background
In order to reduce the occurrence probability of the ground fault of the high-temperature gas cooled reactor and reduce the workload of field maintenance, the outlet of the generator is connected with a main transformer and a high-voltage factory transformer by adopting a closed bus. The temperature sensor needs to monitor the internal temperature in real time during the operation, so that a temperature measuring probe is arranged, and a temperature signal is converted into a low-voltage analog quantity signal and is sent to a measuring device.
However, when the high-speed factory is electrified, a certain amount of voltage is induced at the probe due to the influence of induced electricity, and a loop is formed inside the probe, so that the temperature measuring probe is continuously burnt.
In order to solve the above problems, it is necessary to provide a high-temperature gas cooled reactor enclosed busbar temperature measurement probe and a main power generation system circuit which are reasonable in design and can effectively improve the above problems.
Disclosure of Invention
The embodiment of the disclosure aims at least solving one of the technical problems existing in the prior art and provides a high-temperature gas cooled reactor enclosed bus temperature measurement probe and a main power generation system circuit.
An aspect of an embodiment of the disclosure provides a temperature probe of a closed busbar of a high-temperature gas cooled reactor, wherein the temperature probe is used for being arranged on a protective shell of the closed busbar, and the temperature probe comprises a temperature measuring layer and a first insulating layer;
the temperature measuring layer is used for acquiring temperature signals inside the enclosed bus;
the first insulating layer is arranged on the outer side of the temperature measuring layer in a surrounding mode; wherein,
the temperature measuring layer is connected with the grounding end in a single-point grounding mode.
Optionally, the temperature measurement probe further comprises a metal shielding layer, and the metal shielding layer is enclosed on the outer side of the first insulating layer.
Optionally, the metal shielding layer is made of a non-magnetic conductive material.
Optionally, the temperature measurement probe further comprises a second insulating layer, and the second insulating layer is enclosed on the outer side of the metal shielding layer.
Optionally, the second insulating layer is formed by smearing insulating glue.
Optionally, the first insulating layer is made of rubber or plastic material. .
Another aspect of the disclosed embodiments provides a high temperature gas cooled reactor main power generation system circuit, comprising a closed bus, a generator, a main transformer, a high voltage factory transformer and a bus;
the generator outlet is connected with the first end of the main transformer through the closed bus, and the second end of the main transformer is connected with the bus;
the outlet of the generator is connected with the transformer for the high-voltage plant through the packaging bus; wherein,
a temperature measuring device and the high-temperature gas cooled reactor enclosed bus temperature measuring probe are arranged on the protective shell of the enclosed bus;
the temperature measuring probe is connected with the temperature measuring device and is used for acquiring temperature signals inside the enclosed bus and transmitting the temperature signals to the temperature measuring device.
The high-temperature gas cooled reactor enclosed busbar temperature measurement probe and main power generation system circuit of this disclosed embodiment, temperature measurement probe are used for setting up in the protective housing of enclosed busbar, and temperature measurement probe includes temperature measurement layer and first insulating layer, and the outside on temperature measurement layer is located to the first insulating layer enclosure, and wherein, temperature measurement layer adopts single point ground connection mode and ground connection end connection. According to the temperature measuring probe, the first insulating layer is arranged on the outer side of the temperature measuring layer in a surrounding mode, induced voltage generated when the enclosed bus is charged can be reduced, the temperature measuring layer is connected with the grounding end in a single-point grounding mode, the temperature measuring layer is equipotential with the ground, induced voltage generated when the enclosed bus is charged is further reduced, the voltage quantity induced by the temperature measuring probe is further reduced, and damage to the temperature measuring probe is prevented.
Drawings
FIG. 1 is a cross-sectional view of a closed busbar temperature probe of a high temperature gas cooled reactor in accordance with one embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a main power generation system circuit of a high temperature gas cooled reactor according to another embodiment of the disclosure.
Detailed Description
In order to enable those skilled in the art to better understand the technical solutions of the embodiments of the present disclosure, the embodiments of the present disclosure are described in further detail below with reference to the accompanying drawings and detailed description.
As shown in fig. 1, an aspect of the embodiments of the present disclosure provides a temperature probe 100 for a closed busbar of a high temperature gas cooled reactor, where the temperature probe 100 is configured to be disposed on a protective housing of the closed busbar, the temperature probe 100 includes a temperature measuring layer 110 and a first insulating layer 120, the temperature measuring layer 110 is configured to obtain a temperature signal inside the closed busbar 210, and convert the obtained temperature signal into a low-pressure analog quantity signal to be sent to a temperature measuring device, so as to monitor the temperature inside the closed busbar 210 in real time.
The first insulating layer 120 is disposed around the outer side of the temperature measuring layer 110. In this embodiment, the first insulating layer 120 is made of an insulating material.
Note that, the material of the first insulating layer 120 is not particularly limited in this embodiment, and may be selected according to actual needs, for example, rubber or plastic material may be used for the first insulating layer 120.
The temperature measuring layer 110 is connected with the grounding end in a single-point grounding mode, so that the temperature measuring layer is equipotential with the ground, and the induced voltage generated during charging of the enclosed bus is further reduced.
According to the high-temperature gas cooled reactor enclosed busbar temperature measurement probe, the first insulating layer is arranged on the outer side of the temperature measurement layer in a surrounding mode, so that induced voltage generated when the enclosed busbar is charged can be reduced, the temperature measurement layer is connected with the grounding end in a single-point grounding mode, the temperature measurement layer is equipotential with the ground, induced voltage generated when the enclosed busbar is charged is further reduced, the voltage quantity induced by the temperature measurement probe is further reduced, and damage to the temperature measurement probe is prevented.
Illustratively, as shown in fig. 1, the temperature probe 100 further includes a metal shielding layer 130, and the metal shielding layer 130 is disposed around the outer side of the first insulating layer 120. The metal shielding layer 130 may be made of a non-magnetic material, such as metallic copper or metallic aluminum. In this embodiment, the metal shielding layer 130 is a copper mesh.
Note that, the specific material of the metal shielding layer 130 is not particularly limited in this embodiment, and may be selected according to actual needs.
The high-temperature gas cooled reactor enclosed busbar temperature measurement probe of the embodiment of the disclosure is used for being arranged on a protective shell of an enclosed busbar, and comprises a temperature measurement layer and a first insulating layer, wherein the first insulating layer is arranged on the outer side of the temperature measurement layer in a surrounding mode. According to the temperature measuring probe, the first insulating layer is arranged on the outer side of the temperature measuring layer in a surrounding mode, induced voltage generated when the enclosed bus is charged can be reduced, the temperature measuring layer is connected with the grounding end in a single-point grounding mode, the temperature measuring layer is equipotential with the ground, induced voltage generated when the enclosed bus is charged is further reduced, the voltage quantity induced by the temperature measuring probe is further reduced, and damage to the temperature measuring probe is prevented.
Illustratively, as shown in fig. 1, the temperature probe further includes a second insulating layer 140, where the second insulating layer 140 is enclosed on the outer side of the metal shielding layer 130.
In this embodiment, the second insulating layer 140 is formed by applying an insulating paste. Of course, the second insulating layer 140 may be formed of other materials, and the embodiment is not limited in particular, and may be selected according to actual needs.
According to the high-temperature gas cooled reactor enclosed bus temperature measurement probe, the second insulating layer is arranged on the outer side of the metal shielding layer in a surrounding mode, the second insulating layer can further reduce the generated induced voltage when the enclosed bus is charged, and then the voltage quantity induced by the temperature measurement probe is reduced, so that the temperature measurement probe is prevented from being damaged.
As shown in fig. 2, a high temperature gas cooled reactor main power generation system circuit of an embodiment of the present disclosure includes a closed bus, a generator, a main transformer, a high voltage plant transformer, and a bus.
The generator outlet is connected with the first end of the main transformer through a closed bus, and the second end of the main transformer is connected with the bus. Wherein, be provided with the export circuit breaker on the closed bus.
As shown in fig. 2, the bus bar comprises a first bus bar I and a second bus bar ii, and the second end of the main transformer is connected with the first bus bar I and the second bus bar ii respectively through cables.
The cable includes main cable, first branch cable and second branch cable, and the one end and the main transformer of main cable are connected, are provided with main transformer high voltage side circuit breaker on the main cable. The other end of the main cable is connected with the first branch cable and the second branch cable respectively. The first branch cable is provided with a first bus isolation knife, and the second branch cable is provided with a second bus isolation knife.
The outlet of the generator is connected with a transformer for a high-voltage plant through a packaging bus. Wherein, a temperature measuring device and the high-temperature gas cooled reactor enclosed bus temperature measuring probe 100 are arranged on the protective shell of the enclosed bus.
The temperature probe 100 is connected with a temperature measuring device, and is used for acquiring a temperature signal inside the enclosed bus and transmitting the temperature signal to the temperature measuring device.
Specifically, the temperature measurement probe 100 acquires a temperature signal inside the enclosed bus, converts the acquired temperature signal into a low-voltage analog quantity signal, and transmits the low-voltage analog quantity signal to the temperature measurement device, so as to monitor the temperature inside the enclosed bus in real time.
It should be noted that, the specific structure of the closed busbar temperature measurement probe 100 of the high temperature gas cooled reactor has been described in detail, and will not be described here again.
According to the high-temperature gas cooled reactor main power generation system circuit, the high-temperature gas cooled reactor enclosed busbar temperature measurement probe is arranged on the protective shell of the enclosed busbar, the first insulating layer, the metal shielding layer and the second insulating layer are sequentially arranged on the outer side of the temperature measurement layer of the temperature measurement probe in a surrounding mode, and the temperature measurement layer is grounded in a single point mode.
It is to be understood that the above implementations are merely exemplary implementations employed to illustrate the principles of the disclosed embodiments, which are not limited thereto. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the embodiments of the disclosure, and these modifications and improvements are also considered to be within the scope of the embodiments of the disclosure.

Claims (7)

1. The utility model provides a high temperature gas cooled reactor enclosed busbar temperature probe, the temperature probe is used for setting up the protective housing of enclosed busbar, its characterized in that, the temperature probe includes temperature measurement layer and first insulating layer;
the temperature measuring layer is used for acquiring temperature signals inside the enclosed bus;
the first insulating layer is arranged on the outer side of the temperature measuring layer in a surrounding mode; wherein,
the temperature measuring layer is connected with the grounding end in a single-point grounding mode.
2. The temperature probe of claim 1, further comprising a metallic shielding layer surrounding the outside of the first insulating layer.
3. The temperature probe of claim 2, wherein the metallic shield layer is formed from a non-magnetically permeable material.
4. The temperature probe of claim 2, further comprising a second insulating layer surrounding the outer side of the metallic shielding layer.
5. The temperature probe of claim 4, wherein the second insulating layer is formed by applying an insulating paste.
6. A temperature probe according to any one of claims 1 to 3, wherein the first insulating layer is formed from rubber or plastics material.
7. The high-temperature gas cooled reactor main power generation system circuit is characterized by comprising a closed bus, a generator, a main transformer, a high-voltage factory transformer and a bus;
the generator outlet is connected with the first end of the main transformer through the closed bus, and the second end of the main transformer is connected with the bus;
the outlet of the generator is connected with the high-voltage factory transformer through the enclosed bus; wherein,
a temperature measuring device and the high-temperature gas cooled reactor enclosed bus temperature measuring probe of any one of claims 1 to 6 are arranged on a protective shell of the enclosed bus;
the temperature measuring probe is connected with the temperature measuring device and is used for acquiring temperature signals inside the enclosed bus and transmitting the temperature signals to the temperature measuring device.
CN202321919233.2U 2023-07-20 2023-07-20 High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit Active CN220525169U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202321919233.2U CN220525169U (en) 2023-07-20 2023-07-20 High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202321919233.2U CN220525169U (en) 2023-07-20 2023-07-20 High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit

Publications (1)

Publication Number Publication Date
CN220525169U true CN220525169U (en) 2024-02-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202321919233.2U Active CN220525169U (en) 2023-07-20 2023-07-20 High-temperature gas cooled reactor enclosed bus temperature measurement probe and main power generation system circuit

Country Status (1)

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CN (1) CN220525169U (en)

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