CN220482180U - Silicon rod, silicon wafer and solar cell - Google Patents
Silicon rod, silicon wafer and solar cell Download PDFInfo
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- CN220482180U CN220482180U CN202320927698.6U CN202320927698U CN220482180U CN 220482180 U CN220482180 U CN 220482180U CN 202320927698 U CN202320927698 U CN 202320927698U CN 220482180 U CN220482180 U CN 220482180U
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- silicon rod
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 139
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 139
- 239000010703 silicon Substances 0.000 title claims abstract description 139
- 238000012545 processing Methods 0.000 abstract description 26
- 238000000034 method Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 31
- 238000005520 cutting process Methods 0.000 description 23
- 229910000831 Steel Inorganic materials 0.000 description 21
- 239000010959 steel Substances 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application provides a silicon rod, which comprises a silicon rod with a plurality of planes, wherein a wire slot is formed in the plane of the silicon rod; the wire slot is arranged on a plane where a preset chamfer is located in the silicon rod. The utility model provides a set up the prefabricated wire casing of being convenient for process chamfer income sword in silicon rod corner, put forward the structure of wire casing structure, preset wire casing can reduce the hard effort that the silicon rod appears when processing the chamfer to make the silicon rod reduce 0.81-1.83% at the breakage rate, improve silicon rod processingquality. The application also provides a silicon wafer processed by the silicon rod with the structure and a solar cell processed by the silicon wafer.
Description
Technical Field
The application belongs to the technical field of silicon wafer processing, and particularly relates to a silicon rod, a silicon wafer processed by the silicon rod and a battery made of the silicon wafer.
Background
The conventional photovoltaic silicon wafer is a square silicon wafer processed by a silicon rod, and the square silicon wafer is easy to crack in the processing and transportation processes due to stress concentration at the top angle of the square silicon wafer, so that unnecessary loss is caused. Therefore, in the silicon wafer industry, chamfering is generally arranged at the vertex angle of a square silicon wafer so as to reduce silicon wafer fragmentation caused by stress concentration.
The existing chamfering processing is mainly to grind a crystal bar with a chamfer by directly using a grinding wheel with a specific shape after cutting a silicon wafer bar, and the crystal bar is sliced to obtain a silicon wafer with a smooth chamfer. However, with the continuous development of the photovoltaic industry, the silicon wafer manufacturing has a tendency of flaking and large-size, if the edge of the silicon rod is still directly ground according to a conventional method, the silicon rod is easy to break at the chamfer position, and the silicon wafer breakage rate is high in the slicing treatment process.
Therefore, it is needed to design a new silicon rod structure to reduce the fine breakage during the chamfering process of the silicon rod and improve the surface quality of the silicon rod.
Disclosure of Invention
In view of the above, the present application provides a silicon rod, a silicon wafer processed by the silicon rod, and a battery made by the silicon wafer, which solve the technical problem that in the prior art, breakage occurs easily during chamfering.
In order to solve at least one of the technical problems, the technical scheme adopted in the application is as follows:
a silicon rod comprises a silicon rod with a plurality of planes, and a wire slot is constructed on the plane of the silicon rod; the wire slot is arranged on a plane where a preset chamfer is located in the silicon rod.
Further, the wire grooves which are arranged along the length of the silicon rod and are parallel to the edge lines of the silicon rod are formed on any side surface of each preset chamfer;
the wire slots extend through the length of the silicon rod and are configured in a linear configuration.
Further, the wire slot near one side of the maximum inclined plane of the preset chamfer is externally cut out of the maximum inclined plane of the preset chamfer.
Further, a side surface, far away from the ridge, of the cross section of the wire groove is configured to be a straight line side or a curved surface side which is circumscribed with the maximum inclined surface of the preset chamfer.
Further, one side surface, which is close to the ridge, of the cross section of the wire groove is constructed to be an arc surface structure.
Further, at least one wire slot is formed on any side surface of each preset chamfer;
the wire grooves on two sides of each preset chamfer can be symmetrically arranged or staggered relative to the diagonal center line of the cross section of the silicon rod.
Further, the maximum groove width in the cross section of the wire groove accounts for 1.19-1.38% of the width of the silicon rod;
further, the maximum groove depth in the cross section of the wire groove accounts for 0.59-0.69% of the width of the silicon rod.
A silicon wafer is obtained by using the silicon rod.
A solar cell is obtained by using the silicon wafer.
Adopt a kind of silicon rod that this application designed, this application sets up the prefabricated wire casing of being convenient for process chamfer income sword in silicon rod corner, proposes the structure of wire casing structure, presets the wire casing and is not only convenient for the income sword location during processing, but also can reduce the hard effort that the silicon rod appears when processing the chamfer to make the silicon rod reduce 0.81-1.83% at the breakage rate, improve silicon rod processingquality. The application also provides a silicon wafer processed by the silicon rod with the structure and a solar cell processed by the silicon wafer.
Drawings
FIG. 1 is a schematic illustration of a partially pre-set chamfer centerline slot configuration in one embodiment;
FIG. 2 is a top view of a wire chase on a silicon rod in one embodiment;
FIG. 3 is a schematic illustration of a partially pre-set chamfered centerline slot configuration in another embodiment;
FIG. 4 is a schematic diagram of a symmetrical arrangement of trunking in one embodiment;
fig. 5 is a schematic view of a wire chase misalignment arrangement in another embodiment.
In the figure:
10. silicon rod 20, preset chamfer 30 and wire slot
40. Maximum incline
Detailed Description
The present application will now be described in detail with reference to the accompanying drawings and specific examples.
The silicon rod 10 has a square cross section and a plurality of planes, and the silicon rod 10 is provided with a wire groove 30 on the plane, wherein the wire groove 30 is arranged on the plane of the silicon rod 10 where four preset chamfers 20 are arranged, and each preset chamfer 20 is provided with one wire groove 30 on at least one side surface.
As shown in fig. 1, a wire slot 30 structure on one of the preset chamfers 20 of the silicon rod 10 is illustrated; the other three belt-cut chamfers 20 are identical in structure thereto, and the drawings are omitted. Each slot 30 is completely embedded in the plane of the side of the preset chamfer 20 and does not penetrate through the thickness of the preset chamfer 20.
When the wire groove 30 is used for machining the preset chamfer 20, steel wire cutting machining can be adopted, and grinding wheel grinding machining can also be adopted. When cutting with steel wire, the steel wire may be inserted into the prefabricated wire groove 30 for cutting to obtain the maximum inclined surface 40 of the preset chamfer 20. At this time, the arrangement of the wire chase 30 can solve the problem that the steel wire is not easy to position when cutting the preset chamfer 20, and simultaneously, the arrangement of the wire chase 30 can also reduce the stress at the position of the preset chamfer 20, increase the area of stress diffusion, furthest reduce the cutting stress to the silicon rod 10 when cutting the steel wire, and reduce the occurrence of cracks in the process of gradually cutting off the preset chamfer 20. When the grinding wheel is used for grinding, the silicon rod 10 is ground by the grinding wheel while rotating, when the grinding wheel is ground to the position of the wire groove 30, the impact force of the grinding wheel on the grinding of the silicon rod 10 can be reduced by the arrangement of the wire groove 30, so that silicon materials at the root of the wire groove 30 are cut off more easily, the stress diffusion distribution at the root of the wire groove is larger, the grinding quality of the maximum inclined plane 40 is not influenced during grinding, the collapse rate is reduced, and the tangent plane of the maximum inclined plane 40 is leveled.
As shown in fig. 2, the wire grooves 30 are arranged in parallel with the ridge line along the length direction of the silicon rod 10, and the wire grooves 30 are arranged on a plane in a straight line and are arranged near the chamfer side of the silicon rod 10. The wire slots 30 are disposed throughout the length of the silicon rod 10 and are configured in a linear configuration in length, as shown in a top view in fig. 3. The steel wire cutting location is facilitated, and the consistency and the integrity of cutting of the maximum inclined surface 40 of the preset chamfer can be ensured. The wire chase 30 may be obtained by laser scribing or, alternatively, by steel wire scribing; of course, it can also be obtained by scribing a relatively hard workpiece.
Preferably, a wire groove 30 is constructed on either side of each preset chamfer 20 along the length of the silicon rod 10 and disposed in parallel with the silicon rod 10 ridge. During cutting, the steel wire is adopted to cut the preset chamfer 20, and is embedded in the wire groove 30 based on the position of the wire groove 30, so that the preset chamfer 20 is positioned in a cutting mode, wire mesh cutting of the preset chamfer 20 along the length direction of the silicon rod 10 is completed, and breakage and cracks caused by hard grinding of the preset chamfer 20 of the silicon rod 10 by the existing grinding wheel are avoided. When the grinding wheel is adopted for processing, the stress of the position of the wire groove 30 can be reduced, and the cutting quality of the position can be improved.
The wire groove 30 is disposed at a side of the preset chamfer 20 near the maximum inclined surface 40 thereof, and the wire groove 30 at a side of the preset chamfer 20 near the maximum inclined surface 40 is circumscribed to the maximum inclined surface 40, that is, the wire groove 30 nearest to the maximum inclined surface 40 is circumscribed to the maximum inclined surface 40, and the structure thereof is as shown in fig. 1 and 3. The cross section of the wire groove 30 is concavely arranged on one side of the preset chamfer 20 and does not penetrate through the depth setting of the preset chamfer 20, so that the accuracy and safety of the steel wire cutting knife can be improved, and the stability of cutting the maximum inclined surface 40 of the steel wire when the preset chamfer 20 in the length direction of the silicon rod 10 is synchronously processed can be ensured. Moreover, the deeper the wire grooves 30, the more likely the chipping or edge chipping occurs at the time of cutting, and the flatness and integrity of the cut surface of the maximum inclined surface 40 cannot be ensured. The cross section of the wire slot 30 is constructed as an arc curved surface structure, and the curved surface structure not only facilitates the positioning of the cutter of the steel wire, but also has no sharp angle, reduces stress concentration, is more beneficial to the diffusion of stress, and can reduce the collapse or hidden crack when the cutter is cut into the cutter.
The wire slot 30 is a slot concavely arranged at the position of the preset chamfer 20 on the plane of the silicon rod 10, the opening of the cross section of the wire slot is outwards arranged, the cross section of the wire slot is of a cambered surface curve structure, no edge is arranged, the stress concentration can be reduced while the cutting of a cutter is facilitated, the contact area between a steel wire and the wire slot 30 is enlarged, and the impact force of the steel wire on the preset chamfer 20 can be weakened. The wire grooves 30 can be arranged on the single side surface of each preset chamfer 20, the wire grooves 30 can be arranged on the two side surfaces of each preset chamfer 20, and the structures of all the wire grooves 30 in each silicon rod 10 are identical, so that unified processing is facilitated, and the processing time is reduced due to different processing structures.
When the grooves 30 are provided on both sides of the preset chamfer 20, the grooves 30 on both sides may be symmetrically disposed with respect to the diagonal of the cross section of the silicon rod 10, or the grooves 30 on both sides may be staggered with respect to the diagonal of the cross section of the silicon rod 10. No matter how the positions of the wire grooves 30 on two sides of the preset chamfer 20 are arranged, at least one wire groove 30 is arranged to be clung to the maximum inclined plane 40, and the edge of one side far away from the ridge line is circumscribed with the maximum inclined plane 40, so that the steel wire can cut and peel the preset chamfer 20 out of the body of the silicon rod 10 along the position of the maximum inclined plane 40 based on the position of the wire groove 30 outside the maximum inclined plane 40, and the chamfer processing is completed. When grinding is performed by the grinding wheel, grinding is performed gradually from the outer end to the inner side, the corresponding wire grooves 30 are cut gradually, and grinding is performed to the position of the maximum inclined surface 40.
In one embodiment, as shown in fig. 1, a side surface, far away from the ridge, of the cross section of the wire groove 30 is configured as a straight line side circumscribed with the maximum inclined surface 40 of the preset chamfer 20, at this time, the tangent plane where the maximum inclined surface 40 is located is in straight line circumscribed connection with the wire groove 30, and the side, far away from the maximum inclined surface 40, is in an arc-shaped curved surface structure. The structure not only can improve the positioning of the cutting steel wire, but also can reduce the stress concentration of the section of the maximum inclined plane 40. In addition, the structure can also increase stress diffusion, reduce stress concentration at the position of the maximum inclined plane 40, and relieve hidden cracks or cracks generated during processing of the maximum inclined plane 40, so that the processing quality of the maximum inclined plane 40 can be improved.
In one embodiment, as shown in fig. 3, a side surface, away from the ridge, of the cross section of the wire groove 30 is configured as a curved surface side circumscribed with the maximum inclined surface 40 of the preset chamfer 20, and the side of the whole cross section of the wire groove 30 is in a curved surface structure and is circumscribed and connected with the tangent plane of the maximum inclined surface 40. The arrangement of the structure is not only convenient for processing the wire slot 30, but also is more beneficial to the cutter positioning of the steel wire, and can also increase the influence of the steel wire on the acting force of the maximum inclined plane 40 section, further reduce the concentration of stress and improve the cutting quality. Meanwhile, in the structure, the positions of the wire grooves 30 are all located on the outer side of the maximum inclined plane 40 and are tightly attached to the maximum inclined plane 40, and when chamfering is carried out, the wire grooves 30 cannot influence the position of the maximum inclined plane 40, and stress at the position of the maximum inclined plane 40 can be diffused, so that the influence of stress concentration on the tangential plane where the maximum inclined plane 40 is located is reduced, and hidden cracks are reduced to the greatest extent.
No matter how the side surface of the cross section of the wire groove 30 far from the ridge line is in circumscribed connection with the maximum inclined surface 40 of the preset chamfer 20, the side surface of the cross section of the wire groove 30 close to the ridge line is in an arc surface structure, and is arranged outside the maximum inclined surface 40 of the preset chamfer 20, the arrangement of the wire groove 30 cannot influence the quality of the silicon rod 10 with the maximum inclined surface 40, so that the integrity and consistency of the integral structure of the silicon rod 10 with the maximum inclined surface 40 can be packaged.
Further, at least one wire slot 30 is arranged on any side of each preset chamfer 20, preferably, when only one side of each preset chamfer 20 is provided with the wire slot 30, the position of the wire slot 30 is arranged on the upper end face of the preset chamfer 20, so that when a steel wire is cut, the vertical cutting along the vertical angle connecting line of the wire slot 30 can be conveniently performed, the stress of the maximum inclined plane 40 on the two sides of the preset chamfer 20 can be further reduced, the time of each cutting can be shortened, and the breakage or hidden crack generated to the body of the silicon rod 10 during the cutting can be furthest reduced.
A plurality of groups of wire grooves 30 are arranged on two sides of each preset chamfer 20, and all the wire grooves 30 are symmetrically arranged relative to the diagonal center line of the cross section of the silicon rod 10, as shown in fig. 4; alternatively, all of the wire slots 30 are offset with respect to the diagonal midline of the cross section of the silicon rod 10, as shown in FIG. 5. Regardless of how the number of the wire grooves 30 are arranged on both sides of the preset chamfer 20, all the wire grooves 30 in each silicon rod 10 have the same structure, are all constructed as arc-surface curve structures, and the side of the wire groove, which is close to the edge line, is circumscribed with the maximum inclined surface 40 of the silicon rod 10.
The maximum slot width in the cross section of any wire slot 30 accounts for 1.19-1.38% of the width of the silicon rod 10; and the maximum groove depth in the cross section of any one wire groove 30 accounts for 0.59-0.69% of the width of the silicon rod 10. The stress diffusion can be improved, the processing of the maximum inclined plane 40 is not affected, and the crushing probability of the silicon wafer during chamfering can be reduced.
And processing the silicon rod with the wire groove and the silicon rod without the wire groove by adopting steel wire processing or grinding wheel processing, slicing the processed silicon rod, and finally obtaining a plurality of silicon wafers to obtain the qualification rate of the silicon wafers, wherein the lengths and the processing conditions of the silicon rods are the same as those of the silicon rods shown in the following table 1. As can be seen from Table 1, the yield of the silicon wafer obtained after the processing of the silicon rod 10 with the wire groove 30 was higher than that of the silicon wafer obtained after the processing of the silicon rod 10 with the wire groove 30, no matter the steel wire processing or the grinding wheel processing, the improvement rate was 1.59-3.67%, and accordingly the breakage rate of the silicon rod 10 was reduced by 0.81-1.83%.
Table 1 silicon wafer yield obtained by processing grooved and grooved silicon rods with steel wire or grinding wheel, respectively
A silicon wafer is obtained by using the silicon rod.
A solar cell is obtained by using the silicon wafer.
Adopt a kind of silicon rod that this application designed, this application sets up the prefabricated wire casing of being convenient for process chamfer income sword in silicon rod corner, proposes the structure of wire casing structure, presets the wire casing and is not only convenient for the income sword location during processing, but also can reduce the hard effort that the silicon rod appears when processing the chamfer to make the silicon rod reduce 0.81-1.83% at the breakage rate, improve silicon rod processingquality. The application also provides a silicon wafer processed by the silicon rod with the structure and a solar cell processed by the silicon wafer.
The foregoing detailed description of the embodiments of the present application is provided merely as a preferred embodiment of the present application and is not intended to limit the scope of the present application. All equivalent changes and modifications can be made within the scope of the present application.
Claims (10)
1. The silicon rod is characterized by comprising a silicon rod with a plurality of planes, wherein a wire slot is formed in the plane of the silicon rod; the wire slot is arranged on a plane where a preset chamfer is located in the silicon rod.
2. A silicon rod as defined in claim 1 wherein said wire slots are configured on either side of each of said predetermined chamfers along the length of the silicon rod and in parallel with the silicon rod edges;
the wire slots extend through the length of the silicon rod and are configured in a linear configuration.
3. A silicon rod according to claim 1 or 2, characterized in that the wire groove on the side of the maximum bevel of the preset chamfer is circumscribed by the maximum bevel of the preset chamfer.
4. A silicon rod as claimed in claim 3 wherein the side of the slot cross section remote from the ridge is configured as a straight or curved side circumscribed by the maximum bevel of the predetermined chamfer.
5. A silicon rod as defined in claim 4 wherein a side of the slot in cross section adjacent to the ridge is configured as a cambered surface.
6. A silicon rod as defined in any one of claims 1-2 and 4-5 wherein at least one of said wire slots is configured on either side of each of said predetermined chamfers;
the wire grooves on two sides of each preset chamfer can be symmetrically arranged or staggered relative to the diagonal center line of the cross section of the silicon rod.
7. A silicon rod as defined in claim 6 wherein the maximum slot width in the slot cross section is 1.19-1.38% of the silicon rod width.
8. A silicon rod as defined in claim 7 wherein the maximum groove depth in the cross section of the wire groove is 0.59-0.69% of the width of the silicon rod.
9. Silicon wafer, characterized in that it is obtained with a silicon rod according to any one of claims 1 to 8.
10. A solar cell obtained using the silicon wafer according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320927698.6U CN220482180U (en) | 2023-04-23 | 2023-04-23 | Silicon rod, silicon wafer and solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320927698.6U CN220482180U (en) | 2023-04-23 | 2023-04-23 | Silicon rod, silicon wafer and solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220482180U true CN220482180U (en) | 2024-02-13 |
Family
ID=89828570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320927698.6U Active CN220482180U (en) | 2023-04-23 | 2023-04-23 | Silicon rod, silicon wafer and solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220482180U (en) |
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2023
- 2023-04-23 CN CN202320927698.6U patent/CN220482180U/en active Active
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