CN220421786U - Flip-chip structure applied to bare chip module of film bulk acoustic wave filter - Google Patents
Flip-chip structure applied to bare chip module of film bulk acoustic wave filter Download PDFInfo
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- CN220421786U CN220421786U CN202321619368.7U CN202321619368U CN220421786U CN 220421786 U CN220421786 U CN 220421786U CN 202321619368 U CN202321619368 U CN 202321619368U CN 220421786 U CN220421786 U CN 220421786U
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- Prior art keywords
- chip
- bulk acoustic
- film
- acoustic wave
- substrate
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910000679 solder Inorganic materials 0.000 claims abstract description 32
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 55
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 230000008093 supporting effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004382 potting Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The patent belongs to the field of chip packaging, and particularly relates to a flip-chip bonding structure applied to a bare chip module of a film bulk acoustic wave filter; the structure comprises a film bulk acoustic wave chip and a substrate, wherein the film bulk acoustic wave chip is provided with a first surface and a second surface which are opposite; the substrate has opposite third and fourth surfaces; a PI film is attached to the first surface of the film bulk acoustic wave chip, and photoetching is carried out on the surface of the PI film to form a support body; flip-chip bonding is carried out near a support body on the surface of the PI film to form a solder ball; and filling along the second surface of the film bulk acoustic wave chip, wrapping the film bulk acoustic wave chip, the support body and the solder balls, fixing the support body and the solder balls on the third surface of the substrate, and exposing the fourth surface of the substrate. The PI film is adopted to form the support body, and the support body can be well combined with the design of the chip to carry out corresponding support point design, and has good height consistency.
Description
Technical Field
The application belongs to the field of chip packaging, and particularly relates to a flip-chip bonding structure applied to a bare chip module of a film bulk acoustic wave filter.
Background
Flip-chip bonding to large-size thin chips in rf front-end modules has been a problem in terms of reliability. The current solution is to complete the fabrication of the corresponding support structure on the fabrication of the resin or ceramic substrate, as shown in fig. 1, the conventional flip-chip structure includes a thin film bulk acoustic wave chip 31 and a substrate 11, after the flip-chip, the structure forms a support 21 for the device, the solder balls 22 are formed by flip-chip bonding near the support 21, and the final flip-chip structure is formed by the potting material 41, so that the reliability of the large-size thin chip in the later module packaging and the single SMT process is ensured.
However, the disadvantages of the prior art are apparent:
1. the substrate 11 is designed with a support, so that the position of the support structure is relatively fixed, the design of the chip cannot be well combined, and the support cannot be formed by utilizing the spare positions of the chip, so that the design flexibility of the chip is reduced;
2. the cost is high, and the design process on the ceramic substrate 11 is completely made by electroplating, so that the manufacturing cost of the substrate can be greatly increased, and the thickness of tens of micrometers leads to high electroplating cost;
3. due to the inconsistent electroplating defects 23, the support structure is different in height, and a balanced support structure cannot be well provided, so that a certain reliability risk exists.
Disclosure of Invention
Based on the problems existing in the prior art, after the device manufacturing is completed in the wafer manufacturing process of the film bulk acoustic filter, a PI film is adopted to form the supporting structure, the structure can be well combined with the chip design to carry out corresponding supporting point design, and due to the adoption of a photoetching process, the supporting structure with high consistency can be formed, and the operation of related equipment is not influenced in the process of flip-chip welding of the later-stage ball implantation. Meanwhile, the curing temperature of the PI film is higher than the reflow soldering temperature of the later-stage module package and the SMT package, so that the reliability risk is avoided. The support structure formed by the material is low in cost and obviously due to the prior art.
The utility model provides a flip-chip bonding structure applied to a bare chip module of a film bulk acoustic wave filter, which comprises a film bulk acoustic wave chip and a substrate, wherein the film bulk acoustic wave chip is provided with a first surface and a second surface which are opposite; the substrate has opposite third and fourth surfaces; a PI film is attached to the first surface of the film bulk acoustic wave chip, and photoetching is carried out on the surface of the PI film to form a support body; flip-chip bonding is carried out near a support body on the surface of the PI film to form a solder ball; and filling along the second surface of the film bulk acoustic wave chip, wrapping the film bulk acoustic wave chip, the support body and the solder balls, fixing the support body and the solder balls on the third surface of the substrate, and exposing the fourth surface of the substrate.
Further, the thickness of the PI film is 20-40 um.
Further, the solder balls are tin balls or gold balls.
Further, the substrate is a resin substrate or a ceramic substrate.
Further, the infused material is a resin. The utility model has the beneficial effects that:
1. the PI film is adopted to form the support body, the support body structure provides support for the thin chip in the thickness direction, the design of corresponding support points can be well combined with the design of the chip, the support area is enlarged, and the support structure with good height consistency can be formed due to the adoption of a photoetching process, so that the operation of related equipment is not influenced in the process of flip-chip welding of the later-stage ball planting.
2. The curing temperature of the PI film adopted by the utility model is higher than the reflow soldering temperature of the later-stage module package and the SMT package, so the utility model has no reliability risk. The supporting structure formed by the material has low price and is obviously superior to the prior art.
Drawings
FIG. 1 is a schematic diagram of a flip-chip bonding structure of a conventional film bulk acoustic filter die set;
FIG. 2 is a schematic illustration of a flip chip bonding structure of a film bulk acoustic filter die set of the present utility model;
FIG. 3 is a schematic diagram of a flip chip bonding structure of a thin film bulk acoustic filter die set of the present utility model;
FIG. 4 is a schematic diagram of the flip-chip bonding structure of the film bulk acoustic filter die set of the present utility model;
fig. 5 is a schematic diagram of flip-chip bonding and potting of a flip-chip bonding structure of a thin film bulk acoustic filter die set of the present utility model.
In the figure: 11. 111, substrates, 21, 211, supports, 22, 221, solder balls, 23, plating non-uniformity defects, 31, 311, film bulk acoustic wave chips, 41, 411, and potting material.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
As shown in fig. 2 to 5, a flip-chip bonding structure applied to a bare chip module of a film bulk acoustic wave filter according to the present utility model includes a film bulk acoustic wave chip 311 and a substrate 111, where the film bulk acoustic wave chip 311 has a first surface and a second surface opposite to each other; the substrate 111 has opposite third and fourth surfaces; a PI film is attached to the first surface of the thin film bulk acoustic wave chip 311, and photolithography is performed on the surface of the PI film to form a support 211; flip-chip bonding is performed near the supporting body 211 on the surface of the PI film to form a solder ball 221; the film bulk acoustic wave chip 311, the supporting body 211 and the solder balls 221 are encapsulated by being poured along the second surface of the film bulk acoustic wave chip 311, and the supporting body 211 and the solder balls 221 are fixed on the third surface of the substrate 111, so that the fourth surface of the substrate 111 is exposed.
Wherein, the thickness of the PI film is 20-40 um, and 20um, 30um and 40um can be preferable.
The PI film (polyimide film) is a film type insulating material with the best world performance, is formed by polycondensation and tape casting of pyromellitic dianhydride (PMDA) and diamine diphenyl ether (ODA) in a strong polar solvent and imidization, the PI film has good solidifying performance, a supporting structure formed by the PI film has strong stability and reliability, and the solidifying temperature of the PI film is higher than the reflow soldering temperature of the later module package and the SMT package, so that the supporting body 211 formed by the PI film has good supporting effect and consistency function, and no reliability risk exists.
In the embodiment of the present utility model, the solder balls 211 are solder balls or gold balls.
In the embodiment of the present utility model, the substrate 111 is a resin substrate or a ceramic substrate.
In an embodiment of the present utility model, the potting material 411 is a resin.
In the embodiment of the utility model, the solder balls are formed by ball implantation or solder paste brushing near the support body on the surface of the PI film; the PI film structure provides good positioning and blocking effects, and ensures that the functional area of the device is not polluted when the solder balls are formed. Meanwhile, the support body structure plays a good manufacturing process role in the subsequent module packaging, and the support structure is of a dispersed structure, so that stress change can not be caused to the whole wafer, and the wafer is not warped.
In the embodiment of the utility model, the support body and the solder balls are fixed on the third surface of the substrate, so that flip-chip bonding of the bare chip module of the film bulk acoustic wave filter can be realized, and reflow soldering of later-stage module packaging and SMT packaging can be realized through subsequent processes.
In the preferred embodiment of the present utility model, considering that the support body, the solder balls and the substrate are fixedly connected by the potting resin, although the support body of the PI film and the solder balls can be fixed on the substrate by the resin, the connection stability of the support body and the solder balls at the inner side of the PI film is insufficient, and the PI film and the substrate can be practically attached by molecular bonds and polar bonds, however, the weak adhesion force may damage the stability and reliability of the package structure of the chip module, and the support body and the solder balls at the surface of the PI film may be displaced; specifically, the thermal expansion coefficient of the resin substrate and the easy bending in the process can cause stress mismatch conditions such as pulling and the like on the support structure formed by PI, so that hidden troubles such as layering of the support structure are caused. Therefore, the utility model also forms the bulge on the surface of the supporting body and the solder ball, forms the matched concave on the substrate, or forms the concave on the surface of the supporting body and the solder ball, forms the matched bulge on the substrate, and the PI film structure and the substrate can be fixedly connected through the matched structure, thereby increasing the adhesive capacity between the PI film and the substrate, reducing the displacement phenomenon of the supporting body and the solder ball in the subsequent process and reducing the yield loss.
In the description of the present utility model, it should be understood that the terms "coaxial," "bottom," "one end," "top," "middle," "another end," "upper," "one side," "top," "inner," "outer," "front," "center," "two ends," etc. indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the utility model and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the utility model.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "configured," "connected," "secured," "rotated," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intermediaries, or in communication with each other or in interaction with each other, unless explicitly defined otherwise, the meaning of the terms described above in this application will be understood by those of ordinary skill in the art in view of the specific circumstances.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The flip-chip bonding structure applied to the bare chip module of the film bulk acoustic wave filter is characterized by comprising a film bulk acoustic wave chip and a substrate, wherein the film bulk acoustic wave chip is provided with a first surface and a second surface which are opposite; the substrate has opposite third and fourth surfaces; a PI film is attached to the first surface of the film bulk acoustic wave chip, and photoetching is carried out on the surface of the PI film to form a support body; flip-chip bonding is carried out near a support body on the surface of the PI film to form a solder ball; filling along the second surface of the film bulk acoustic wave chip, wrapping the film bulk acoustic wave chip, the support body and the solder balls, fixing the support body and the solder balls on the third surface of the substrate, and exposing the fourth surface of the substrate; forming protrusions on the surfaces of the support body and the solder balls, and forming matched recesses on the substrate; or forming concave-convex parts on the surface of the support body and the solder balls, and forming matched convex parts on the substrate.
2. The flip-chip structure applied to the bare chip module of the thin film bulk acoustic filter according to claim 1, wherein the thickness of the PI film is 20-40 um.
3. The flip-chip structure of claim 1, wherein the solder balls are solder balls or gold balls.
4. The flip-chip bonding structure applied to a bare chip module of a thin film bulk acoustic filter according to claim 1, wherein the substrate is a resin substrate or a ceramic substrate.
5. The flip-chip bonding structure applied to a bare chip module of a thin film bulk acoustic filter according to claim 1, wherein the poured material is a resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321619368.7U CN220421786U (en) | 2023-06-25 | 2023-06-25 | Flip-chip structure applied to bare chip module of film bulk acoustic wave filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321619368.7U CN220421786U (en) | 2023-06-25 | 2023-06-25 | Flip-chip structure applied to bare chip module of film bulk acoustic wave filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220421786U true CN220421786U (en) | 2024-01-30 |
Family
ID=89645323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321619368.7U Active CN220421786U (en) | 2023-06-25 | 2023-06-25 | Flip-chip structure applied to bare chip module of film bulk acoustic wave filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220421786U (en) |
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2023
- 2023-06-25 CN CN202321619368.7U patent/CN220421786U/en active Active
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